DE69421226D1 - Auswahlschaltung, die eine Spannung auswählt, welche an einer ersten oder einer zweiten Klemme angelegt ist, in Abhängigkeit vom an der ersten Klemme angelegten Spannungspegel - Google Patents
Auswahlschaltung, die eine Spannung auswählt, welche an einer ersten oder einer zweiten Klemme angelegt ist, in Abhängigkeit vom an der ersten Klemme angelegten SpannungspegelInfo
- Publication number
- DE69421226D1 DE69421226D1 DE69421226T DE69421226T DE69421226D1 DE 69421226 D1 DE69421226 D1 DE 69421226D1 DE 69421226 T DE69421226 T DE 69421226T DE 69421226 T DE69421226 T DE 69421226T DE 69421226 D1 DE69421226 D1 DE 69421226D1
- Authority
- DE
- Germany
- Prior art keywords
- terminal
- voltage
- selects
- depending
- selection circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
- G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/409—Read-write [R-W] circuits
- G11C11/4099—Dummy cell treatment; Reference voltage generators
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/70—Masking faults in memories by using spares or by reconfiguring
- G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
- G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
- G11C29/787—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes using a fuse hierarchy
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Dram (AREA)
- Tests Of Electronic Circuits (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Testing Of Individual Semiconductor Devices (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5201341A JP2727921B2 (ja) | 1993-08-13 | 1993-08-13 | 半導体集積回路装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69421226D1 true DE69421226D1 (de) | 1999-11-25 |
DE69421226T2 DE69421226T2 (de) | 2000-05-31 |
Family
ID=16439425
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69421226T Expired - Fee Related DE69421226T2 (de) | 1993-08-13 | 1994-08-12 | Auswahlschaltung, die eine Spannung auswählt, welche an einer ersten oder einer zweiten Klemme angelegt ist, in Abhängigkeit vom an der ersten Klemme angelegten Spannungspegel |
Country Status (5)
Country | Link |
---|---|
US (1) | US5563546A (de) |
EP (1) | EP0638902B1 (de) |
JP (1) | JP2727921B2 (de) |
KR (1) | KR100193307B1 (de) |
DE (1) | DE69421226T2 (de) |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5671189A (en) * | 1996-05-28 | 1997-09-23 | Etron Technology, Inc. | Low standby power redundancy circuit |
US5852378A (en) * | 1997-02-11 | 1998-12-22 | Micron Technology, Inc. | Low-skew differential signal converter |
US5940608A (en) | 1997-02-11 | 1999-08-17 | Micron Technology, Inc. | Method and apparatus for generating an internal clock signal that is synchronized to an external clock signal |
US6104209A (en) | 1998-08-27 | 2000-08-15 | Micron Technology, Inc. | Low skew differential receiver with disable feature |
US5946244A (en) | 1997-03-05 | 1999-08-31 | Micron Technology, Inc. | Delay-locked loop with binary-coupled capacitor |
US6173432B1 (en) | 1997-06-20 | 2001-01-09 | Micron Technology, Inc. | Method and apparatus for generating a sequence of clock signals |
JPH1166890A (ja) * | 1997-08-12 | 1999-03-09 | Mitsubishi Electric Corp | 半導体集積回路装置 |
US6108804A (en) * | 1997-09-11 | 2000-08-22 | Micron Technology, Inc. | Method and apparatus for testing adjustment of a circuit parameter |
US6269451B1 (en) | 1998-02-27 | 2001-07-31 | Micron Technology, Inc. | Method and apparatus for adjusting data timing by delaying clock signal |
US6212482B1 (en) | 1998-03-06 | 2001-04-03 | Micron Technology, Inc. | Circuit and method for specifying performance parameters in integrated circuits |
JP3173727B2 (ja) * | 1998-03-10 | 2001-06-04 | 日本電気株式会社 | 電圧検出回路 |
US6338127B1 (en) | 1998-08-28 | 2002-01-08 | Micron Technology, Inc. | Method and apparatus for resynchronizing a plurality of clock signals used to latch respective digital signals, and memory device using same |
US6349399B1 (en) | 1998-09-03 | 2002-02-19 | Micron Technology, Inc. | Method and apparatus for generating expect data from a captured bit pattern, and memory device using same |
US6279090B1 (en) | 1998-09-03 | 2001-08-21 | Micron Technology, Inc. | Method and apparatus for resynchronizing a plurality of clock signals used in latching respective digital signals applied to a packetized memory device |
US6430696B1 (en) | 1998-11-30 | 2002-08-06 | Micron Technology, Inc. | Method and apparatus for high speed data capture utilizing bit-to-bit timing correction, and memory device using same |
US6374360B1 (en) | 1998-12-11 | 2002-04-16 | Micron Technology, Inc. | Method and apparatus for bit-to-bit timing correction of a high speed memory bus |
US6470060B1 (en) | 1999-03-01 | 2002-10-22 | Micron Technology, Inc. | Method and apparatus for generating a phase dependent control signal |
JP2002015599A (ja) * | 2000-06-27 | 2002-01-18 | Oki Electric Ind Co Ltd | 半導体記憶装置 |
US6801989B2 (en) | 2001-06-28 | 2004-10-05 | Micron Technology, Inc. | Method and system for adjusting the timing offset between a clock signal and respective digital signals transmitted along with that clock signal, and memory device and computer system using same |
US6744271B2 (en) * | 2002-04-30 | 2004-06-01 | Infineon Technologies Ag | Internal generation of reference voltage |
US7053691B2 (en) * | 2003-05-06 | 2006-05-30 | Hewlett-Packard Development Company, L.P. | Electrical circuit for selecting a desired power source |
US7168027B2 (en) | 2003-06-12 | 2007-01-23 | Micron Technology, Inc. | Dynamic synchronization of data capture on an optical or other high speed communications link |
JP2005038482A (ja) * | 2003-07-17 | 2005-02-10 | Toshiba Microelectronics Corp | 半導体装置 |
KR100542695B1 (ko) * | 2003-11-13 | 2006-01-11 | 주식회사 하이닉스반도체 | 반도체 소자의 테스트 모드 회로 |
US7250795B2 (en) * | 2005-03-29 | 2007-07-31 | Promos Technologies Pte. Ltd. | High-speed, low-power input buffer for integrated circuit devices |
KR100799109B1 (ko) * | 2006-06-30 | 2008-01-29 | 주식회사 하이닉스반도체 | 반도체 소자 |
US8212544B2 (en) * | 2007-08-13 | 2012-07-03 | SK hynix, Inc. | Semiconductor integrated circuit having level regulation for reference voltage |
JP2009289784A (ja) * | 2008-05-27 | 2009-12-10 | Nec Electronics Corp | 半導体集積回路装置 |
US8222886B2 (en) | 2008-06-18 | 2012-07-17 | Hioki Denki Kabushiki Kaisha | Voltage detecting apparatus and line voltage detecting apparatus having a detection electrode disposed facing a detected object |
WO2010113263A1 (ja) * | 2009-03-31 | 2010-10-07 | 富士通株式会社 | 半導体集積回路及び電源電圧制御方法 |
US8482339B1 (en) * | 2009-06-12 | 2013-07-09 | National Acquisition Sub, Inc. | Method and apparatus for temperature compensation of filter circuits |
US8289062B2 (en) * | 2010-09-16 | 2012-10-16 | Micron Technology, Inc. | Analog delay lines and adaptive biasing |
JP6370151B2 (ja) * | 2014-07-31 | 2018-08-08 | エイブリック株式会社 | 半導体集積回路装置及びその出力電圧調整方法 |
US9792979B1 (en) * | 2016-11-30 | 2017-10-17 | Apple Inc. | Process, voltage, and temperature tracking SRAM retention voltage regulator |
JP6746659B2 (ja) * | 2018-11-09 | 2020-08-26 | 華邦電子股▲ふん▼有限公司Winbond Electronics Corp. | メモリデバイス及びその内蔵セルフテスト方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5744291A (en) * | 1980-08-27 | 1982-03-12 | Toshiba Corp | Drive pulse generating circuit of charge transfer element |
US4469959A (en) * | 1982-03-15 | 1984-09-04 | Motorola, Inc. | Input buffer |
JPS5974721A (ja) * | 1982-10-21 | 1984-04-27 | Toshiba Corp | シユミツト・トリガ回路 |
US4556804A (en) * | 1983-11-17 | 1985-12-03 | Motorola, Inc. | Power multiplexer switch and method |
US4617473A (en) * | 1984-01-03 | 1986-10-14 | Intersil, Inc. | CMOS backup power switching circuit |
US4694430A (en) * | 1985-03-21 | 1987-09-15 | Sprague Electric Company | Logic controlled switch to alternate voltage sources |
US4763020B1 (en) * | 1985-09-06 | 1997-07-08 | Ricoh Kk | Programmable logic device having plural programmable function cells |
JP2605687B2 (ja) * | 1986-04-17 | 1997-04-30 | 三菱電機株式会社 | 半導体装置 |
JP2733796B2 (ja) * | 1990-02-13 | 1998-03-30 | セイコーインスツルメンツ株式会社 | スイッチ回路 |
JPH041992A (ja) * | 1990-04-18 | 1992-01-07 | Toshiba Corp | 半導体記憶装置 |
JPH04172011A (ja) * | 1990-11-05 | 1992-06-19 | Mitsubishi Electric Corp | 半導体集積回路 |
US5187396A (en) * | 1991-05-22 | 1993-02-16 | Benchmarq Microelectronics, Inc. | Differential comparator powered from signal input terminals for use in power switching applications |
-
1993
- 1993-08-13 JP JP5201341A patent/JP2727921B2/ja not_active Expired - Fee Related
-
1994
- 1994-08-12 EP EP94112657A patent/EP0638902B1/de not_active Expired - Lifetime
- 1994-08-12 DE DE69421226T patent/DE69421226T2/de not_active Expired - Fee Related
- 1994-08-12 KR KR1019940019867A patent/KR100193307B1/ko not_active IP Right Cessation
- 1994-08-12 US US08/289,211 patent/US5563546A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5563546A (en) | 1996-10-08 |
EP0638902B1 (de) | 1999-10-20 |
KR950006850A (ko) | 1995-03-21 |
JP2727921B2 (ja) | 1998-03-18 |
JPH0758297A (ja) | 1995-03-03 |
EP0638902A2 (de) | 1995-02-15 |
DE69421226T2 (de) | 2000-05-31 |
KR100193307B1 (ko) | 1999-06-15 |
EP0638902A3 (de) | 1995-05-17 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP |
|
8339 | Ceased/non-payment of the annual fee |