DE69424759T2 - Gasphasenabscheidungsverfahren in einer einzigen Kammer für Dünnfilmtransistoren - Google Patents
Gasphasenabscheidungsverfahren in einer einzigen Kammer für DünnfilmtransistorenInfo
- Publication number
- DE69424759T2 DE69424759T2 DE69424759T DE69424759T DE69424759T2 DE 69424759 T2 DE69424759 T2 DE 69424759T2 DE 69424759 T DE69424759 T DE 69424759T DE 69424759 T DE69424759 T DE 69424759T DE 69424759 T2 DE69424759 T2 DE 69424759T2
- Authority
- DE
- Germany
- Prior art keywords
- thin film
- vapor deposition
- deposition process
- film transistors
- single chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 239000010409 thin film Substances 0.000 title 1
- 238000005019 vapor deposition process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/6675—Amorphous silicon or polysilicon transistors
- H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02441—Group 14 semiconducting materials
- H01L21/0245—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02502—Layer structure consisting of two layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/905—Cleaning of reaction chamber
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17410393A | 1993-12-28 | 1993-12-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69424759D1 DE69424759D1 (de) | 2000-07-06 |
DE69424759T2 true DE69424759T2 (de) | 2001-02-08 |
Family
ID=22634830
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69424759T Expired - Fee Related DE69424759T2 (de) | 1993-12-28 | 1994-11-22 | Gasphasenabscheidungsverfahren in einer einzigen Kammer für Dünnfilmtransistoren |
Country Status (4)
Country | Link |
---|---|
US (1) | US5589233A (de) |
EP (1) | EP0661731B1 (de) |
JP (3) | JP2918792B2 (de) |
DE (1) | DE69424759T2 (de) |
Families Citing this family (77)
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KR910003742B1 (ko) * | 1986-09-09 | 1991-06-10 | 세미콘덕터 에너지 라보라터리 캄파니 리미티드 | Cvd장치 |
KR0171982B1 (ko) * | 1995-12-02 | 1999-03-30 | 김주용 | 반도체 소자의 필드 산화막 형성방법 |
DE19712233C2 (de) * | 1996-03-26 | 2003-12-11 | Lg Philips Lcd Co | Flüssigkristallanzeige und Herstellungsverfahren dafür |
US5824365A (en) * | 1996-06-24 | 1998-10-20 | Micron Technology, Inc. | Method of inhibiting deposition of material on an internal wall of a chemical vapor deposition reactor |
US6020035A (en) * | 1996-10-29 | 2000-02-01 | Applied Materials, Inc. | Film to tie up loose fluorine in the chamber after a clean process |
US20030143410A1 (en) * | 1997-03-24 | 2003-07-31 | Applied Materials, Inc. | Method for reduction of contaminants in amorphous-silicon film |
US5904542A (en) * | 1997-03-26 | 1999-05-18 | Advanced Micro Devices, Inc. | Performing a semiconductor fabrication sequence within a common chamber and without opening the chamber beginning with forming a field dielectric and concluding with a gate dielectric |
US5937308A (en) * | 1997-03-26 | 1999-08-10 | Advanced Micro Devices, Inc. | Semiconductor trench isolation structure formed substantially within a single chamber |
US5891793A (en) * | 1997-04-04 | 1999-04-06 | Advanced Micro Devices, Inc. | Transistor fabrication process employing a common chamber for gate oxide and gate conductor formation |
JP3801730B2 (ja) | 1997-05-09 | 2006-07-26 | 株式会社半導体エネルギー研究所 | プラズマcvd装置及びそれを用いた薄膜形成方法 |
JP4114972B2 (ja) * | 1997-05-27 | 2008-07-09 | キヤノンアネルバ株式会社 | 基板処理装置 |
TW460943B (en) * | 1997-06-11 | 2001-10-21 | Applied Materials Inc | Reduction of mobile ion and metal contamination in HDP-CVD chambers using chamber seasoning film depositions |
US6624064B1 (en) | 1997-10-10 | 2003-09-23 | Applied Materials, Inc. | Chamber seasoning method to improve adhesion of F-containing dielectric film to metal for VLSI application |
US6323119B1 (en) | 1997-10-10 | 2001-11-27 | Applied Materials, Inc. | CVD deposition method to improve adhesion of F-containing dielectric metal lines for VLSI application |
US6211065B1 (en) | 1997-10-10 | 2001-04-03 | Applied Materials, Inc. | Method of depositing and amorphous fluorocarbon film using HDP-CVD |
US6071573A (en) * | 1997-12-30 | 2000-06-06 | Lam Research Corporation | Process for precoating plasma CVD reactors |
JPH11260734A (ja) * | 1998-03-12 | 1999-09-24 | Nec Corp | 半導体装置の製造方法 |
US6635569B1 (en) * | 1998-04-20 | 2003-10-21 | Tokyo Electron Limited | Method of passivating and stabilizing a Ti-PECVD process chamber and combined Ti-PECVD/TiN-CVD processing method and apparatus |
US6225601B1 (en) | 1998-07-13 | 2001-05-01 | Applied Komatsu Technology, Inc. | Heating a substrate support in a substrate handling chamber |
US6530992B1 (en) | 1999-07-09 | 2003-03-11 | Applied Materials, Inc. | Method of forming a film in a chamber and positioning a substitute in a chamber |
US6586343B1 (en) | 1999-07-09 | 2003-07-01 | Applied Materials, Inc. | Method and apparatus for directing constituents through a processing chamber |
US6645884B1 (en) * | 1999-07-09 | 2003-11-11 | Applied Materials, Inc. | Method of forming a silicon nitride layer on a substrate |
TW544743B (en) * | 1999-08-13 | 2003-08-01 | Semiconductor Energy Lab | Method of manufacturing a semiconductor device |
US6274500B1 (en) | 1999-10-12 | 2001-08-14 | Chartered Semiconductor Manufacturing Ltd. | Single wafer in-situ dry clean and seasoning for plasma etching process |
JP4592849B2 (ja) * | 1999-10-29 | 2010-12-08 | アプライド マテリアルズ インコーポレイテッド | 半導体製造装置 |
US6573030B1 (en) | 2000-02-17 | 2003-06-03 | Applied Materials, Inc. | Method for depositing an amorphous carbon layer |
US6448180B2 (en) * | 2000-03-09 | 2002-09-10 | Advanced Micro Devices, Inc. | Deposition of in-situ doped semiconductor film and undoped semiconductor film in the same reaction chamber |
JP4790896B2 (ja) * | 2000-05-26 | 2011-10-12 | エーユー オプトロニクス コーポレイション | トップゲート型tftを含むアクティブマトリックスデバイスの製造方法および製造装置 |
US6436488B1 (en) * | 2000-06-12 | 2002-08-20 | Agilent Technologies, Inc. | Chemical vapor deposition method for amorphous silicon and resulting film |
JP4389359B2 (ja) * | 2000-06-23 | 2009-12-24 | 日本電気株式会社 | 薄膜トランジスタ及びその製造方法 |
US6559052B2 (en) | 2000-07-07 | 2003-05-06 | Applied Materials, Inc. | Deposition of amorphous silicon films by high density plasma HDP-CVD at low temperatures |
US6413321B1 (en) | 2000-12-07 | 2002-07-02 | Applied Materials, Inc. | Method and apparatus for reducing particle contamination on wafer backside during CVD process |
US6706336B2 (en) * | 2001-02-02 | 2004-03-16 | Canon Kabushiki Kaisha | Silicon-based film, formation method therefor and photovoltaic element |
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EP1448807A4 (de) * | 2001-10-30 | 2005-07-13 | Massachusetts Inst Technology | Fluorkohlenstoff-organosilicium-copolymere und nach dem hfcvd-verfahren hergestellte überzüge |
US6734101B1 (en) | 2001-10-31 | 2004-05-11 | Taiwan Semiconductor Manufacturing Company | Solution to the problem of copper hillocks |
US6730615B2 (en) * | 2002-02-19 | 2004-05-04 | Intel Corporation | High reflector tunable stress coating, such as for a MEMS mirror |
US6541397B1 (en) | 2002-03-29 | 2003-04-01 | Applied Materials, Inc. | Removable amorphous carbon CMP stop |
JP2004072049A (ja) * | 2002-08-09 | 2004-03-04 | Ricoh Co Ltd | 有機tft素子及びその製造方法 |
EP1554413B1 (de) | 2002-10-25 | 2013-07-24 | TEL Solar AG | Verfahren zur Herstellung von Halbleiterbauelementen |
US6808748B2 (en) | 2003-01-23 | 2004-10-26 | Applied Materials, Inc. | Hydrogen assisted HDP-CVD deposition process for aggressive gap-fill technology |
US7723228B2 (en) * | 2003-05-20 | 2010-05-25 | Applied Materials, Inc. | Reduction of hillocks prior to dielectric barrier deposition in Cu damascene |
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US6958112B2 (en) | 2003-05-27 | 2005-10-25 | Applied Materials, Inc. | Methods and systems for high-aspect-ratio gapfill using atomic-oxygen generation |
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US6903031B2 (en) * | 2003-09-03 | 2005-06-07 | Applied Materials, Inc. | In-situ-etch-assisted HDP deposition using SiF4 and hydrogen |
US7109114B2 (en) * | 2004-05-07 | 2006-09-19 | Applied Materials, Inc. | HDP-CVD seasoning process for high power HDP-CVD gapfil to improve particle performance |
US7229931B2 (en) | 2004-06-16 | 2007-06-12 | Applied Materials, Inc. | Oxygen plasma treatment for enhanced HDP-CVD gapfill |
US7183227B1 (en) | 2004-07-01 | 2007-02-27 | Applied Materials, Inc. | Use of enhanced turbomolecular pump for gapfill deposition using high flows of low-mass fluent gas |
TWI244128B (en) * | 2004-08-26 | 2005-11-21 | Mosel Vitelic Inc | Method of utilizing amorphous silicon layer to form a gate structure and its application |
US7087536B2 (en) | 2004-09-01 | 2006-08-08 | Applied Materials | Silicon oxide gapfill deposition using liquid precursors |
US20060189171A1 (en) * | 2005-02-23 | 2006-08-24 | Chua Choon A | Seasoning process for a deposition chamber |
US7678715B2 (en) | 2007-12-21 | 2010-03-16 | Applied Materials, Inc. | Low wet etch rate silicon nitride film |
US8183081B2 (en) * | 2008-07-16 | 2012-05-22 | Applied Materials, Inc. | Hybrid heterojunction solar cell fabrication using a metal layer mask |
KR20100033091A (ko) * | 2008-09-19 | 2010-03-29 | 한국전자통신연구원 | 화학기상증착법에 의한 비정질 실리콘 박막의 증착방법 |
WO2010068331A1 (en) | 2008-12-10 | 2010-06-17 | Applied Materials, Inc. | Enhanced vision system for screen printing pattern alignment |
JP5698950B2 (ja) | 2009-10-23 | 2015-04-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US8709551B2 (en) * | 2010-03-25 | 2014-04-29 | Novellus Systems, Inc. | Smooth silicon-containing films |
US9028924B2 (en) | 2010-03-25 | 2015-05-12 | Novellus Systems, Inc. | In-situ deposition of film stacks |
US8741394B2 (en) | 2010-03-25 | 2014-06-03 | Novellus Systems, Inc. | In-situ deposition of film stacks |
JP5948040B2 (ja) | 2010-11-04 | 2016-07-06 | 株式会社半導体エネルギー研究所 | 結晶性半導体膜の作製方法及び半導体装置の作製方法 |
KR102025441B1 (ko) | 2012-04-06 | 2019-09-25 | 노벨러스 시스템즈, 인코포레이티드 | 증착 후 소프트 어닐링 |
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WO2014003855A1 (en) | 2012-06-27 | 2014-01-03 | Monteris Medical Corporation | Image-guided therapy of a tissue |
US9388491B2 (en) | 2012-07-23 | 2016-07-12 | Novellus Systems, Inc. | Method for deposition of conformal films with catalysis assisted low temperature CVD |
US9018108B2 (en) | 2013-01-25 | 2015-04-28 | Applied Materials, Inc. | Low shrinkage dielectric films |
US8895415B1 (en) | 2013-05-31 | 2014-11-25 | Novellus Systems, Inc. | Tensile stressed doped amorphous silicon |
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US9299558B2 (en) | 2014-03-21 | 2016-03-29 | Applied Materials, Inc. | Run-to-run stability of film deposition |
US9548188B2 (en) | 2014-07-30 | 2017-01-17 | Lam Research Corporation | Method of conditioning vacuum chamber of semiconductor substrate processing apparatus |
US10327830B2 (en) | 2015-04-01 | 2019-06-25 | Monteris Medical Corporation | Cryotherapy, thermal therapy, temperature modulation therapy, and probe apparatus therefor |
CN104795315A (zh) * | 2015-04-15 | 2015-07-22 | 上海华力微电子有限公司 | 一种非晶硅薄膜及一种半导体器件的制造方法 |
CN113628959A (zh) * | 2021-07-19 | 2021-11-09 | 华虹半导体(无锡)有限公司 | 应用于功率器件的沟槽填充方法 |
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JPS5992519A (ja) * | 1982-11-19 | 1984-05-28 | Hitachi Ltd | 半導体装置の製造方法 |
JPS59204274A (ja) * | 1983-05-06 | 1984-11-19 | Seiko Instr & Electronics Ltd | 薄膜トランジスタ |
US4933296A (en) * | 1985-08-02 | 1990-06-12 | General Electric Company | N+ amorphous silicon thin film transistors for matrix addressed liquid crystal displays |
JPS6294922A (ja) * | 1985-10-22 | 1987-05-01 | Fuji Photo Film Co Ltd | プラズマcvd法による製膜装置 |
FR2590406B1 (fr) * | 1985-11-15 | 1988-10-28 | Commissariat Energie Atomique | Procede de fabrication d'un transistor en couches minces a grille auto-alignee par rapport au drain et a la source de celui-ci |
DE3725358A1 (de) * | 1987-07-30 | 1989-02-09 | Telog Systems Gmbh | Vorrichtung und verfahren zur oberflaechenbehandlung von materialien |
JPH0194615A (ja) * | 1987-10-06 | 1989-04-13 | Seiko Epson Corp | プラズマcvd装置 |
US4990981A (en) * | 1988-01-29 | 1991-02-05 | Hitachi, Ltd. | Thin film transistor and a liquid crystal display device using same |
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JP2708533B2 (ja) * | 1989-03-14 | 1998-02-04 | 富士通株式会社 | Cvd装置の残留ガス除去方法 |
US5244730A (en) * | 1991-04-30 | 1993-09-14 | International Business Machines Corporation | Plasma deposition of fluorocarbon |
US5221414A (en) * | 1991-07-16 | 1993-06-22 | Micron Technology, Inc. | Process and system for stabilizing layer deposition and etch rates while simultaneously maintaining cleanliness in a water processing reaction chamber |
JPH08977B2 (ja) * | 1991-08-22 | 1996-01-10 | 日新電機株式会社 | プラズマcvd法及び装置 |
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US5266504A (en) * | 1992-03-26 | 1993-11-30 | International Business Machines Corporation | Low temperature emitter process for high performance bipolar devices |
JP3204735B2 (ja) * | 1992-06-01 | 2001-09-04 | 株式会社東芝 | 水素化アモルファスシリコン薄膜トランジスタの製造方法 |
US5281546A (en) * | 1992-09-02 | 1994-01-25 | General Electric Company | Method of fabricating a thin film transistor using hydrogen plasma treatment of the intrinsic silicon/doped layer interface |
JPH07169700A (ja) * | 1993-12-16 | 1995-07-04 | Sanyo Electric Co Ltd | 基板の処理装置 |
-
1994
- 1994-11-22 DE DE69424759T patent/DE69424759T2/de not_active Expired - Fee Related
- 1994-11-22 EP EP94118349A patent/EP0661731B1/de not_active Expired - Lifetime
- 1994-12-28 JP JP6327116A patent/JP2918792B2/ja not_active Expired - Lifetime
-
1995
- 1995-06-06 US US08/466,915 patent/US5589233A/en not_active Expired - Lifetime
-
1999
- 1999-01-27 JP JP11018760A patent/JPH11265855A/ja active Pending
-
2006
- 2006-11-06 JP JP2006300796A patent/JP2007134706A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0661731B1 (de) | 2000-05-31 |
JPH07326589A (ja) | 1995-12-12 |
JP2918792B2 (ja) | 1999-07-12 |
JPH11265855A (ja) | 1999-09-28 |
DE69424759D1 (de) | 2000-07-06 |
US5589233A (en) | 1996-12-31 |
JP2007134706A (ja) | 2007-05-31 |
EP0661731A2 (de) | 1995-07-05 |
EP0661731A3 (de) | 1995-11-15 |
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