DE69425186D1 - Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung und Verfahren zu ihrer Herstellung - Google Patents

Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung und Verfahren zu ihrer Herstellung

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Publication number
DE69425186D1
DE69425186D1 DE69425186T DE69425186T DE69425186D1 DE 69425186 D1 DE69425186 D1 DE 69425186D1 DE 69425186 T DE69425186 T DE 69425186T DE 69425186 T DE69425186 T DE 69425186T DE 69425186 D1 DE69425186 D1 DE 69425186D1
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Germany
Prior art keywords
iii
production
gallium nitride
device made
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69425186T
Other languages
English (en)
Other versions
DE69425186T2 (de
DE69425186T3 (de
Inventor
Shuji Nakamura
Takao Yamada
Masayuki Senoh
Kanji Bando
Motokazu Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nichia Corp
Original Assignee
Nichia Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=27571647&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69425186(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from JP12489093A external-priority patent/JP2803742B2/ja
Priority claimed from JP12931393A external-priority patent/JP2748818B2/ja
Priority claimed from JP20727493A external-priority patent/JP2783349B2/ja
Priority claimed from JP23468493A external-priority patent/JP2697572B2/ja
Priority claimed from JP23468593A external-priority patent/JP2770717B2/ja
Priority claimed from JP25317193A external-priority patent/JP2770720B2/ja
Priority claimed from JP872794A external-priority patent/JP3154364B2/ja
Application filed by Nichia Chemical Industries Ltd filed Critical Nichia Chemical Industries Ltd
Publication of DE69425186D1 publication Critical patent/DE69425186D1/de
Application granted granted Critical
Publication of DE69425186T2 publication Critical patent/DE69425186T2/de
Publication of DE69425186T3 publication Critical patent/DE69425186T3/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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DE69425186T 1993-04-28 1994-04-27 Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung und Verfahren zu ihrer Herstellung Expired - Lifetime DE69425186T3 (de)

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JP12489093A JP2803742B2 (ja) 1993-04-28 1993-04-28 窒化ガリウム系化合物半導体発光素子及びその電極形成方法
JP12489093 1993-04-28
JP12931393 1993-05-31
JP12931393A JP2748818B2 (ja) 1993-05-31 1993-05-31 窒化ガリウム系化合物半導体発光素子
JP20727493A JP2783349B2 (ja) 1993-07-28 1993-07-28 ｎ型窒化ガリウム系化合物半導体層の電極及びその形成方法
JP20727493 1993-07-28
JP23468593A JP2770717B2 (ja) 1993-09-21 1993-09-21 窒化ガリウム系化合物半導体発光素子
JP23468493 1993-09-21
JP23468493A JP2697572B2 (ja) 1993-09-21 1993-09-21 窒化ガリウム系化合物半導体発光素子
JP23468593 1993-09-21
JP25317193A JP2770720B2 (ja) 1993-10-08 1993-10-08 窒化ガリウム系化合物半導体発光素子
JP25317193 1993-10-08
JP872794A JP3154364B2 (ja) 1994-01-28 1994-01-28 ｎ型窒化ガリウム系化合物半導体層の電極及びその形成方法
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JP872794 1994-01-28
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US20030094620A1 (en) 2003-05-22
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