DE69425316D1 - Verfahren zur Bestimmung der Rekombinationslebendauer von Minoritäts-Ladungsträgern einer Probe aus Halbleitermaterial - Google Patents
Verfahren zur Bestimmung der Rekombinationslebendauer von Minoritäts-Ladungsträgern einer Probe aus HalbleitermaterialInfo
- Publication number
- DE69425316D1 DE69425316D1 DE69425316T DE69425316T DE69425316D1 DE 69425316 D1 DE69425316 D1 DE 69425316D1 DE 69425316 T DE69425316 T DE 69425316T DE 69425316 T DE69425316 T DE 69425316T DE 69425316 D1 DE69425316 D1 DE 69425316D1
- Authority
- DE
- Germany
- Prior art keywords
- determining
- semiconductor material
- charge carriers
- sample made
- minority charge
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/265—Contactless testing
- G01R31/2656—Contactless testing using non-ionising electromagnetic radiation, e.g. optical radiation
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/159,334 US5453703A (en) | 1993-11-29 | 1993-11-29 | Method for determining the minority carrier surface recombination lifetime constant (ts of a specimen of semiconductor material |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69425316D1 true DE69425316D1 (de) | 2000-08-24 |
DE69425316T2 DE69425316T2 (de) | 2001-02-22 |
Family
ID=22572129
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69425316T Expired - Fee Related DE69425316T2 (de) | 1993-11-29 | 1994-11-29 | Verfahren zur Bestimmung der Rekombinationslebendauer von Minoritäts-Ladungsträgern einer Probe aus Halbleitermaterial |
Country Status (4)
Country | Link |
---|---|
US (1) | US5453703A (de) |
EP (1) | EP0656643B1 (de) |
JP (1) | JP2954492B2 (de) |
DE (1) | DE69425316T2 (de) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH08191091A (ja) * | 1995-01-10 | 1996-07-23 | Komatsu Electron Metals Co Ltd | シリコンウェーハの酸化膜耐圧強度の簡便評価法 |
US5661408A (en) | 1995-03-01 | 1997-08-26 | Qc Solutions, Inc. | Real-time in-line testing of semiconductor wafers |
US5767693A (en) * | 1996-09-04 | 1998-06-16 | Smithley Instruments, Inc. | Method and apparatus for measurement of mobile charges with a corona screen gun |
US6034535A (en) * | 1997-02-14 | 2000-03-07 | Semitest Inc. | Method utilizing a modulated light beam for determining characteristics such as the doping concentration profile of a specimen of semiconductor material |
US5977788A (en) * | 1997-07-11 | 1999-11-02 | Lagowski; Jacek | Elevated temperature measurement of the minority carrier lifetime in the depletion layer of a semiconductor wafer |
JP3568741B2 (ja) * | 1997-07-31 | 2004-09-22 | 株式会社東芝 | 半導体評価装置および半導体製造システム |
US5929652A (en) * | 1997-09-02 | 1999-07-27 | Midwest Research Institute | Apparatus for measuring minority carrier lifetimes in semiconductor materials |
US6275060B1 (en) * | 1997-09-02 | 2001-08-14 | Midwest Research Institute | Apparatus and method for measuring minority carrier lifetimes in semiconductor materials |
US6066952A (en) * | 1997-09-25 | 2000-05-23 | International Business Machnies Corporation | Method for polysilicon crystalline line width measurement post etch in undoped-poly process |
US6060709A (en) * | 1997-12-31 | 2000-05-09 | Verkuil; Roger L. | Apparatus and method for depositing uniform charge on a thin oxide semiconductor wafer |
US6430022B2 (en) * | 1999-04-19 | 2002-08-06 | Applied Materials, Inc. | Method and apparatus for controlling chucking force in an electrostatic |
US6329800B1 (en) | 2000-10-17 | 2001-12-11 | Sigmatel | Method and apparatus for reducing power consumption in driver circuits |
US6680621B2 (en) * | 2001-01-26 | 2004-01-20 | Semiconductor Diagnostics, Inc. | Steady state method for measuring the thickness and the capacitance of ultra thin dielectric in the presence of substantial leakage current |
US6894519B2 (en) * | 2002-04-11 | 2005-05-17 | Solid State Measurements, Inc. | Apparatus and method for determining electrical properties of a semiconductor wafer |
US6836139B2 (en) * | 2002-10-22 | 2004-12-28 | Solid State Measurments, Inc. | Method and apparatus for determining defect and impurity concentration in semiconducting material of a semiconductor wafer |
US7663385B2 (en) | 2002-12-13 | 2010-02-16 | Nanometrics Incorporated | Apparatus and method for electrical characterization by selecting and adjusting the light for a target depth of a semiconductor |
US6972582B2 (en) * | 2003-02-10 | 2005-12-06 | Solid State Measurements, Inc. | Apparatus and method for measuring semiconductor wafer electrical properties |
JP2004285444A (ja) * | 2003-03-24 | 2004-10-14 | Daido Steel Co Ltd | 安定した靭性を示す低合金高速度工具鋼 |
US6911350B2 (en) * | 2003-03-28 | 2005-06-28 | Qc Solutions, Inc. | Real-time in-line testing of semiconductor wafers |
US7323888B1 (en) * | 2003-11-01 | 2008-01-29 | Colvin James B | System and method for use in functional failure analysis by induced stimulus |
US7872485B2 (en) * | 2004-10-18 | 2011-01-18 | Colvin James B | System and method for use in functional failure analysis by induced stimulus |
US7119569B2 (en) * | 2004-03-05 | 2006-10-10 | Qc Solutions, Inc. | Real-time in-line testing of semiconductor wafers |
JP4416566B2 (ja) * | 2004-04-26 | 2010-02-17 | Sumco Techxiv株式会社 | 不純物金属濃度測定の方法 |
US7034563B1 (en) * | 2005-01-26 | 2006-04-25 | Ahbee 2, L.P., A California Limited Partnership | Apparatus for measuring of thin dielectric layer properties on semiconductor wafers with contact self aligning electrodes |
US7521946B1 (en) * | 2005-04-06 | 2009-04-21 | Kla-Tencor Technologies Corporation | Electrical measurements on semiconductors using corona and microwave techniques |
US20130341581A1 (en) * | 2012-06-13 | 2013-12-26 | Dan Ritter | Device, a method for measuring temperature and a programmable insulator-semiconductor bipolar transistor |
US10564215B2 (en) | 2014-07-01 | 2020-02-18 | Raja Technologies Inc. | System and method of semiconductor characterization |
US10352989B2 (en) * | 2014-07-01 | 2019-07-16 | Raja Technologies Inc. | System and method of semiconductor characterization |
US9002677B1 (en) * | 2014-07-01 | 2015-04-07 | Raja Technologies | System and method of semiconductor characterization |
CN110470965B (zh) * | 2019-07-09 | 2020-07-28 | 同济大学 | 一种半导体表面态载流子寿命测试方法 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0325453B1 (de) * | 1988-01-20 | 1994-12-07 | Semitest, Inc. | Verfahren für nichtinvasive Charakterisierung von Halbleitern |
US4827212A (en) * | 1988-01-20 | 1989-05-02 | Semitest, Inc. | Noninvasive method and apparatus for characterization of semiconductors |
DE59006874D1 (de) * | 1989-05-31 | 1994-09-29 | Siemens Ag | Verfahren zur Bestimmung der Rekombinationsgeschwindigkeit von Minoritätsträgern an Grenzflächen zwischen Halbleitern und anderen Substanzen. |
US5087876A (en) * | 1990-07-16 | 1992-02-11 | Semitest, Inc. | Apparatus and method for making surface photovoltage measurements of a semiconductor |
-
1993
- 1993-11-29 US US08/159,334 patent/US5453703A/en not_active Expired - Fee Related
-
1994
- 1994-11-29 JP JP6295278A patent/JP2954492B2/ja not_active Expired - Fee Related
- 1994-11-29 EP EP94402719A patent/EP0656643B1/de not_active Expired - Lifetime
- 1994-11-29 DE DE69425316T patent/DE69425316T2/de not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
US5453703A (en) | 1995-09-26 |
DE69425316T2 (de) | 2001-02-22 |
JP2954492B2 (ja) | 1999-09-27 |
JPH07302823A (ja) | 1995-11-14 |
EP0656643A1 (de) | 1995-06-07 |
EP0656643B1 (de) | 2000-07-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |