DE69428603T2 - Heizungssubstrathalter für eine halbleiterscheibe mit zwei-zonen rückwandheizung und segmentiertem klemmelement - Google Patents
Heizungssubstrathalter für eine halbleiterscheibe mit zwei-zonen rückwandheizung und segmentiertem klemmelementInfo
- Publication number
- DE69428603T2 DE69428603T2 DE69428603T DE69428603T DE69428603T2 DE 69428603 T2 DE69428603 T2 DE 69428603T2 DE 69428603 T DE69428603 T DE 69428603T DE 69428603 T DE69428603 T DE 69428603T DE 69428603 T2 DE69428603 T2 DE 69428603T2
- Authority
- DE
- Germany
- Prior art keywords
- heating
- rear wall
- substrate holder
- clamping element
- semiconductor disc
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/319,884 US5595241A (en) | 1994-10-07 | 1994-10-07 | Wafer heating chuck with dual zone backplane heating and segmented clamping member |
| PCT/US1994/013615 WO1996011495A1 (en) | 1994-10-07 | 1994-11-29 | Wafer heating chuck with dual zone backplane heating and segmented clamping member |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69428603D1 DE69428603D1 (de) | 2001-11-15 |
| DE69428603T2 true DE69428603T2 (de) | 2002-07-11 |
Family
ID=23244014
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69428603T Expired - Lifetime DE69428603T2 (de) | 1994-10-07 | 1994-11-29 | Heizungssubstrathalter für eine halbleiterscheibe mit zwei-zonen rückwandheizung und segmentiertem klemmelement |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US5595241A (de) |
| EP (1) | EP0733267B1 (de) |
| JP (1) | JP3485326B2 (de) |
| KR (1) | KR100312670B1 (de) |
| AU (1) | AU1294895A (de) |
| CA (1) | CA2176362A1 (de) |
| DE (1) | DE69428603T2 (de) |
| TW (1) | TW280939B (de) |
| WO (1) | WO1996011495A1 (de) |
Families Citing this family (59)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5562947A (en) * | 1994-11-09 | 1996-10-08 | Sony Corporation | Method and apparatus for isolating a susceptor heating element from a chemical vapor deposition environment |
| US5679404A (en) * | 1995-06-07 | 1997-10-21 | Saint-Gobain/Norton Industrial Ceramics Corporation | Method for depositing a substance with temperature control |
| JP3493880B2 (ja) * | 1996-02-28 | 2004-02-03 | 信越半導体株式会社 | 輻射加熱装置および加熱方法 |
| US5844205A (en) * | 1996-04-19 | 1998-12-01 | Applied Komatsu Technology, Inc. | Heated substrate support structure |
| US5892203A (en) * | 1996-05-29 | 1999-04-06 | International Business Machines Corporation | Apparatus for making laminated integrated circuit devices |
| WO1998005060A1 (en) * | 1996-07-31 | 1998-02-05 | The Board Of Trustees Of The Leland Stanford Junior University | Multizone bake/chill thermal cycling module |
| US5811762A (en) * | 1996-09-25 | 1998-09-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Heater assembly with dual temperature control for use in PVD/CVD system |
| JPH10135315A (ja) * | 1996-10-29 | 1998-05-22 | Tokyo Electron Ltd | 試料載置台の温度制御装置及び検査装置 |
| US6035101A (en) * | 1997-02-12 | 2000-03-07 | Applied Materials, Inc. | High temperature multi-layered alloy heater assembly and related methods |
| US6529362B2 (en) | 1997-03-06 | 2003-03-04 | Applied Materials Inc. | Monocrystalline ceramic electrostatic chuck |
| AU7291398A (en) | 1997-05-06 | 1998-11-27 | Thermoceramix, L.L.C. | Deposited resistive coatings |
| US6082297A (en) * | 1997-09-12 | 2000-07-04 | Novellus Sytems, Inc. | Encapsulated thermofoil heater apparatus and associated methods |
| US5991312A (en) | 1997-11-03 | 1999-11-23 | Carrier Access Corporation | Telecommunications multiplexer |
| US6183562B1 (en) * | 1997-12-23 | 2001-02-06 | Sony Corporation Of Japan | Thermal protection system for a chemical vapor deposition machine |
| US6018616A (en) * | 1998-02-23 | 2000-01-25 | Applied Materials, Inc. | Thermal cycling module and process using radiant heat |
| US6072163A (en) * | 1998-03-05 | 2000-06-06 | Fsi International Inc. | Combination bake/chill apparatus incorporating low thermal mass, thermally conductive bakeplate |
| DE19822000C2 (de) * | 1998-05-15 | 2002-04-18 | Infineon Technologies Ag | Prüfverfahren für integrierte Schaltungen auf einem Wafer |
| US6147334A (en) * | 1998-06-30 | 2000-11-14 | Marchi Associates, Inc. | Laminated paddle heater and brazing process |
| US6108491A (en) * | 1998-10-30 | 2000-08-22 | Applied Materials, Inc. | Dual surface reflector |
| JP4317608B2 (ja) * | 1999-01-18 | 2009-08-19 | 東京エレクトロン株式会社 | 成膜装置 |
| US6583638B2 (en) * | 1999-01-26 | 2003-06-24 | Trio-Tech International | Temperature-controlled semiconductor wafer chuck system |
| JP2000243542A (ja) * | 1999-02-24 | 2000-09-08 | Nhk Spring Co Ltd | ヒータユニット及びその製造方法 |
| JP2000277237A (ja) * | 1999-03-24 | 2000-10-06 | Komatsu Ltd | 基板温度制御プレート及びそれを備える基板温度制御装置 |
| US6373679B1 (en) | 1999-07-02 | 2002-04-16 | Cypress Semiconductor Corp. | Electrostatic or mechanical chuck assembly conferring improved temperature uniformity onto workpieces held thereby, workpiece processing technology and/or apparatus containing the same, and method(s) for holding and/or processing a workpiece with the same |
| US6466426B1 (en) * | 1999-08-03 | 2002-10-15 | Applied Materials Inc. | Method and apparatus for thermal control of a semiconductor substrate |
| JP4209057B2 (ja) | 1999-12-01 | 2009-01-14 | 東京エレクトロン株式会社 | セラミックスヒーターならびにそれを用いた基板処理装置および基板処理方法 |
| US6328807B1 (en) * | 1999-12-14 | 2001-12-11 | Corning Incorporated | Chuck heater for improved planar deposition process |
| US6472643B1 (en) | 2000-03-07 | 2002-10-29 | Silicon Valley Group, Inc. | Substrate thermal management system |
| US6414276B1 (en) * | 2000-03-07 | 2002-07-02 | Silicon Valley Group, Inc. | Method for substrate thermal management |
| US6476362B1 (en) | 2000-09-12 | 2002-11-05 | Applied Materials, Inc. | Lamp array for thermal processing chamber |
| CN101638765A (zh) | 2000-11-29 | 2010-02-03 | 萨莫希雷梅克斯公司 | 电阻加热器及其应用 |
| DE10127223A1 (de) * | 2001-05-22 | 2003-01-23 | Ego Elektro Geraetebau Gmbh | Heizungseinrichtung für Filterelemente eines Partikelfilters und Partikelfilter |
| US6529686B2 (en) * | 2001-06-06 | 2003-03-04 | Fsi International, Inc. | Heating member for combination heating and chilling apparatus, and methods |
| US6897411B2 (en) * | 2002-02-11 | 2005-05-24 | Applied Materials, Inc. | Heated substrate support |
| DE10216786C5 (de) * | 2002-04-15 | 2009-10-15 | Ers Electronic Gmbh | Verfahren und Vorrichtung zur Konditionierung von Halbleiterwafern und/oder Hybriden |
| JP2004055722A (ja) * | 2002-07-18 | 2004-02-19 | Renesas Technology Corp | 洗浄装置、基板の洗浄方法および半導体装置の製造方法 |
| US6918965B2 (en) * | 2002-08-28 | 2005-07-19 | Micron Technology, Inc. | Single substrate annealing of magnetoresistive structure |
| US20040226513A1 (en) * | 2003-05-12 | 2004-11-18 | Applied Materials, Inc. | Chamber for uniform heating of large area substrates |
| US20040244949A1 (en) * | 2003-05-30 | 2004-12-09 | Tokyo Electron Limited | Temperature controlled shield ring |
| US6991003B2 (en) * | 2003-07-28 | 2006-01-31 | M.Braun, Inc. | System and method for automatically purifying solvents |
| WO2005103874A2 (en) * | 2004-04-16 | 2005-11-03 | Cascade Basic Research Corp. | Modelling relationships within an on-line connectivity universe |
| US20060130764A1 (en) * | 2004-12-16 | 2006-06-22 | Jusung Engineering Co., Ltd. | Susceptor for apparatus fabricating thin film |
| US7429718B2 (en) * | 2005-08-02 | 2008-09-30 | Applied Materials, Inc. | Heating and cooling of substrate support |
| US7652227B2 (en) * | 2006-05-18 | 2010-01-26 | Applied Materials, Inc. | Heating and cooling plate for a vacuum chamber |
| JP5272485B2 (ja) * | 2008-04-08 | 2013-08-28 | 住友電気工業株式会社 | 基板支持部材 |
| CN104313529A (zh) * | 2008-05-01 | 2015-01-28 | 萨莫希雷梅克斯公司 | 制造烹饪器具的方法 |
| CN102308380B (zh) * | 2009-02-04 | 2014-06-04 | 马特森技术有限公司 | 用于径向调整衬底的表面上的温度轮廓的静电夹具系统及方法 |
| TWM392431U (en) * | 2010-02-04 | 2010-11-11 | Epistar Corp | Systems for epitaxial growth |
| NL2006913A (en) * | 2010-07-16 | 2012-01-17 | Asml Netherlands Bv | Lithographic apparatus and method. |
| US20130008602A1 (en) * | 2011-07-07 | 2013-01-10 | Lam Research Ag | Apparatus for treating a wafer-shaped article |
| US9691652B2 (en) * | 2012-03-07 | 2017-06-27 | Ngk Spark Plug Co., Ltd. | Carrier device and ceramic member |
| US20140151360A1 (en) * | 2012-11-30 | 2014-06-05 | Wd Media, Inc. | Heater assembly for disk processing system |
| JP6080571B2 (ja) * | 2013-01-31 | 2017-02-15 | 東京エレクトロン株式会社 | 載置台及びプラズマ処理装置 |
| KR20180110213A (ko) * | 2013-08-06 | 2018-10-08 | 어플라이드 머티어리얼스, 인코포레이티드 | 국부적으로 가열되는 다-구역 기판 지지부 |
| US10032601B2 (en) | 2014-02-21 | 2018-07-24 | Varian Semiconductor Equipment Associates, Inc. | Platen support structure |
| JP2016063033A (ja) * | 2014-09-17 | 2016-04-25 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法および記録媒体 |
| US10008399B2 (en) | 2015-05-19 | 2018-06-26 | Applied Materials, Inc. | Electrostatic puck assembly with metal bonded backing plate for high temperature processes |
| US10249526B2 (en) * | 2016-03-04 | 2019-04-02 | Applied Materials, Inc. | Substrate support assembly for high temperature processes |
| US11011355B2 (en) * | 2017-05-12 | 2021-05-18 | Lam Research Corporation | Temperature-tuned substrate support for substrate processing systems |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3369989A (en) * | 1964-07-22 | 1968-02-20 | Ibm | Cathode sputtering apparatus including precision temperature control of substrate |
| US3633537A (en) * | 1970-07-06 | 1972-01-11 | Gen Motors Corp | Vapor deposition apparatus with planetary susceptor |
| US4909314A (en) * | 1979-12-21 | 1990-03-20 | Varian Associates, Inc. | Apparatus for thermal treatment of a wafer in an evacuated environment |
| US4680061A (en) * | 1979-12-21 | 1987-07-14 | Varian Associates, Inc. | Method of thermal treatment of a wafer in an evacuated environment |
| US4396640A (en) * | 1981-12-22 | 1983-08-02 | Chevron Research Company | Apparatus and method for substrate temperature control |
| US4470369A (en) * | 1982-07-12 | 1984-09-11 | Energy Conversion Devices, Inc. | Apparatus for uniformly heating a substrate |
| US4535227A (en) * | 1983-10-04 | 1985-08-13 | Ushio Denki Kabushiki Kaisha | Method for heating semiconductor wafer by means of application of radiated light |
| US4777022A (en) * | 1984-08-28 | 1988-10-11 | Stephen I. Boldish | Epitaxial heater apparatus and process |
| US4680451A (en) * | 1985-07-29 | 1987-07-14 | A. G. Associates | Apparatus using high intensity CW lamps for improved heat treating of semiconductor wafers |
| US4647361A (en) * | 1985-09-03 | 1987-03-03 | International Business Machines Corporation | Sputtering apparatus |
| US4724621A (en) * | 1986-04-17 | 1988-02-16 | Varian Associates, Inc. | Wafer processing chuck using slanted clamping pins |
| JPS6372877A (ja) * | 1986-09-12 | 1988-04-02 | Tokuda Seisakusho Ltd | 真空処理装置 |
| US4821674A (en) * | 1987-03-31 | 1989-04-18 | Deboer Wiebe B | Rotatable substrate supporting mechanism with temperature sensing device for use in chemical vapor deposition equipment |
| US4996942A (en) * | 1987-03-31 | 1991-03-05 | Epsilon Technology, Inc. | Rotatable substrate supporting susceptor with temperature sensors |
| JPS6411966A (en) * | 1987-07-02 | 1989-01-17 | Fujitsu Ltd | High-temperature sputtering method |
| JPH01152271A (ja) * | 1987-12-09 | 1989-06-14 | Toshiba Corp | スパッタ装置 |
| US4949783A (en) * | 1988-05-18 | 1990-08-21 | Veeco Instruments, Inc. | Substrate transport and cooling apparatus and method for same |
| US5133286A (en) * | 1989-04-14 | 1992-07-28 | Samsung Electro-Mechanics Co., Ltd. | Substrate-heating device and boat structure for a vacuum-depositing apparatus |
| US4987856A (en) * | 1989-05-22 | 1991-01-29 | Advanced Semiconductor Materials America, Inc. | High throughput multi station processor for multiple single wafers |
| JPH0687463B2 (ja) * | 1989-08-24 | 1994-11-02 | 株式会社東芝 | 半導体気相成長装置 |
| US4971653A (en) * | 1990-03-14 | 1990-11-20 | Matrix Integrated Systems | Temperature controlled chuck for elevated temperature etch processing |
| KR940011708B1 (ko) * | 1990-04-09 | 1994-12-23 | 니찌덴 아네루바 가부시끼가이샤 | 기판온도제어기구 |
| EP0452779B1 (de) * | 1990-04-20 | 1996-03-27 | Applied Materials, Inc. | Klemmechanismus für physikalische Dampfniederschlagvorrichtung |
| JP2593726B2 (ja) * | 1990-04-27 | 1997-03-26 | 信越半導体株式会社 | 気相成長装置および気相成長方法 |
| US5230741A (en) * | 1990-07-16 | 1993-07-27 | Novellus Systems, Inc. | Gas-based backside protection during substrate processing |
| US5267607A (en) * | 1991-05-28 | 1993-12-07 | Tokyo Electron Limited | Substrate processing apparatus |
| US5294778A (en) * | 1991-09-11 | 1994-03-15 | Lam Research Corporation | CVD platen heater system utilizing concentric electric heating elements |
| JPH0697080A (ja) * | 1992-09-10 | 1994-04-08 | Mitsubishi Electric Corp | 化学気相成長装置用反応室および該反応室を用いた化学気相成長装置 |
| US5460684A (en) * | 1992-12-04 | 1995-10-24 | Tokyo Electron Limited | Stage having electrostatic chuck and plasma processing apparatus using same |
| US5467220A (en) * | 1994-02-18 | 1995-11-14 | Applied Materials, Inc. | Method and apparatus for improving semiconductor wafer surface temperature uniformity |
-
1994
- 1994-10-07 US US08/319,884 patent/US5595241A/en not_active Expired - Lifetime
- 1994-11-29 JP JP51255096A patent/JP3485326B2/ja not_active Expired - Lifetime
- 1994-11-29 DE DE69428603T patent/DE69428603T2/de not_active Expired - Lifetime
- 1994-11-29 CA CA002176362A patent/CA2176362A1/en not_active Abandoned
- 1994-11-29 EP EP95904144A patent/EP0733267B1/de not_active Expired - Lifetime
- 1994-11-29 WO PCT/US1994/013615 patent/WO1996011495A1/en active IP Right Grant
- 1994-11-29 AU AU12948/95A patent/AU1294895A/en not_active Abandoned
- 1994-11-29 KR KR1019960702981A patent/KR100312670B1/ko not_active IP Right Cessation
-
1995
- 1995-01-11 TW TW084100221A patent/TW280939B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US5595241A (en) | 1997-01-21 |
| AU1294895A (en) | 1996-05-02 |
| TW280939B (en) | 1996-07-11 |
| DE69428603D1 (de) | 2001-11-15 |
| EP0733267B1 (de) | 2001-10-10 |
| KR100312670B1 (ko) | 2002-04-06 |
| WO1996011495A1 (en) | 1996-04-18 |
| JP3485326B2 (ja) | 2004-01-13 |
| JPH09506480A (ja) | 1997-06-24 |
| CA2176362A1 (en) | 1996-04-18 |
| EP0733267A1 (de) | 1996-09-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |