DE69433245D1 - Herstellungsverfahren für Halbleiterbauelement mit Kondensator von hoher dielektrischer Konstante - Google Patents

Herstellungsverfahren für Halbleiterbauelement mit Kondensator von hoher dielektrischer Konstante

Info

Publication number
DE69433245D1
DE69433245D1 DE69433245T DE69433245T DE69433245D1 DE 69433245 D1 DE69433245 D1 DE 69433245D1 DE 69433245 T DE69433245 T DE 69433245T DE 69433245 T DE69433245 T DE 69433245T DE 69433245 D1 DE69433245 D1 DE 69433245D1
Authority
DE
Germany
Prior art keywords
capacitor
manufacturing
semiconductor device
dielectric constant
high dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69433245T
Other languages
English (en)
Other versions
DE69433245T2 (de
Inventor
Koji Arita
Eiji Fujii
Yasuhiro Shimada
Yasuhiro Uemoto
Atsuo Inoue
Toru Nasu
Akihiro Matsuda
Yoshihisa Nagano
Taketoshi Matsuura
Tatsuo Otsuki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP5194618A external-priority patent/JP2960287B2/ja
Priority claimed from JP5194617A external-priority patent/JP2845727B2/ja
Priority claimed from JP6026514A external-priority patent/JP2912816B2/ja
Priority claimed from JP06055552A external-priority patent/JP3110605B2/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Publication of DE69433245D1 publication Critical patent/DE69433245D1/de
Application granted granted Critical
Publication of DE69433245T2 publication Critical patent/DE69433245T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/55—Capacitors with a dielectric comprising a perovskite structure material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B51/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors
    • H10B51/30—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory transistors characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/75—Electrodes comprising two or more layers, e.g. comprising a barrier layer and a metal layer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/958—Passivation layer
DE69433245T 1993-08-05 1994-08-03 Herstellungsverfahren für Halbleiterbauelement mit Kondensator von hoher dielektrischer Konstante Expired - Fee Related DE69433245T2 (de)

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP19461893 1993-08-05
JP5194618A JP2960287B2 (ja) 1993-08-05 1993-08-05 半導体装置およびその製造方法
JP19461793 1993-08-05
JP5194617A JP2845727B2 (ja) 1993-08-05 1993-08-05 半導体装置の製造方法
JP6026514A JP2912816B2 (ja) 1994-02-24 1994-02-24 半導体装置および半導体装置の製造方法
JP2651494 1994-02-24
JP5555294 1994-03-25
JP06055552A JP3110605B2 (ja) 1994-03-25 1994-03-25 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
DE69433245D1 true DE69433245D1 (de) 2003-11-20
DE69433245T2 DE69433245T2 (de) 2004-07-22

Family

ID=27458511

Family Applications (5)

Application Number Title Priority Date Filing Date
DE69426208T Expired - Fee Related DE69426208T2 (de) 1993-08-05 1994-08-03 Halbleiterbauelement mit Kondensator und dessen Herstellungsverfahren
DE69434606T Active DE69434606T8 (de) 1993-08-05 1994-08-03 Halbleiterbauelement mit Kondensator und dessen Herstellungsverfahren
DE69433244T Expired - Fee Related DE69433244T2 (de) 1993-08-05 1994-08-03 Herstellungsverfahren für Halbleiterbauelement mit Kondensator von hoher dielektrischer Konstante
DE69432643T Expired - Fee Related DE69432643T2 (de) 1993-08-05 1994-08-03 Halbleiterbauelement mit Kondensator
DE69433245T Expired - Fee Related DE69433245T2 (de) 1993-08-05 1994-08-03 Herstellungsverfahren für Halbleiterbauelement mit Kondensator von hoher dielektrischer Konstante

Family Applications Before (4)

Application Number Title Priority Date Filing Date
DE69426208T Expired - Fee Related DE69426208T2 (de) 1993-08-05 1994-08-03 Halbleiterbauelement mit Kondensator und dessen Herstellungsverfahren
DE69434606T Active DE69434606T8 (de) 1993-08-05 1994-08-03 Halbleiterbauelement mit Kondensator und dessen Herstellungsverfahren
DE69433244T Expired - Fee Related DE69433244T2 (de) 1993-08-05 1994-08-03 Herstellungsverfahren für Halbleiterbauelement mit Kondensator von hoher dielektrischer Konstante
DE69432643T Expired - Fee Related DE69432643T2 (de) 1993-08-05 1994-08-03 Halbleiterbauelement mit Kondensator

Country Status (5)

Country Link
US (7) US5624864A (de)
EP (6) EP0738014B1 (de)
KR (1) KR0157099B1 (de)
CN (2) CN1038210C (de)
DE (5) DE69426208T2 (de)

Families Citing this family (100)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69317940T2 (de) * 1992-06-12 1998-11-26 Matsushita Electronics Corp Halbleiterbauelement mit Kondensator
JP3045928B2 (ja) * 1994-06-28 2000-05-29 松下電子工業株式会社 半導体装置およびその製造方法
JPH0870105A (ja) * 1994-08-30 1996-03-12 Mitsubishi Electric Corp 半導体記憶装置およびその製造方法
JP3246274B2 (ja) * 1995-06-22 2002-01-15 松下電器産業株式会社 半導体装置
JP3417167B2 (ja) 1995-09-29 2003-06-16 ソニー株式会社 半導体メモリ素子のキャパシタ構造及びその形成方法
US5571746A (en) * 1995-10-19 1996-11-05 Chartered Semiconductor Manufacturing Pte Ltd. Method of forming a back end capacitor with high unit capacitance
US5708559A (en) * 1995-10-27 1998-01-13 International Business Machines Corporation Precision analog metal-metal capacitor
EP0836226A4 (de) * 1996-04-19 2001-09-05 Matsushita Electronics Corp Halbleitervorrichtung
JP3432997B2 (ja) * 1996-04-23 2003-08-04 株式会社東芝 半導体装置に使用する絶縁膜
JPH09298289A (ja) * 1996-04-30 1997-11-18 Fujitsu Ltd 酸化物誘電体積層構造の製造方法及び電子回路装置
JP3027941B2 (ja) * 1996-05-14 2000-04-04 日本電気株式会社 誘電体容量素子を用いた記憶装置及び製造方法
US6815762B2 (en) * 1997-05-30 2004-11-09 Hitachi, Ltd. Semiconductor integrated circuit device and process for manufacturing the same including spacers on bit lines
JP2954877B2 (ja) * 1996-06-18 1999-09-27 松下電子工業株式会社 容量素子の製造方法
EP0837504A3 (de) * 1996-08-20 1999-01-07 Ramtron International Corporation Teilweise oder ganz eingekapselte ferroelektrische Anordnung
US6027947A (en) * 1996-08-20 2000-02-22 Ramtron International Corporation Partially or completely encapsulated top electrode of a ferroelectric capacitor
US5990513A (en) * 1996-10-08 1999-11-23 Ramtron International Corporation Yield enhancement technique for integrated circuit processing to reduce effects of undesired dielectric moisture retention and subsequent hydrogen out-diffusion
TW468253B (en) 1997-01-13 2001-12-11 Hitachi Ltd Semiconductor memory device
US5750419A (en) * 1997-02-24 1998-05-12 Motorola, Inc. Process for forming a semiconductor device having a ferroelectric capacitor
JP3257587B2 (ja) 1997-05-23 2002-02-18 日本電気株式会社 誘電体膜を用いた半導体装置の製造方法
JP3149817B2 (ja) * 1997-05-30 2001-03-26 日本電気株式会社 半導体装置およびその製造方法
TW396454B (en) * 1997-06-24 2000-07-01 Matsushita Electrics Corporati Semiconductor device and method for fabricating the same
JP3484324B2 (ja) * 1997-07-29 2004-01-06 シャープ株式会社 半導体メモリ素子
JP3090198B2 (ja) * 1997-08-21 2000-09-18 日本電気株式会社 半導体装置の構造およびその製造方法
JP3424900B2 (ja) * 1997-10-24 2003-07-07 松下電器産業株式会社 半導体装置およびその製造方法
US5866449A (en) * 1997-10-27 1999-02-02 Taiwan Semiconductor Manufacturing Company Ltd. Method of making polysilicon-via structure for four transistor, triple polysilicon layer SRAM cell including two polysilicon layer load resistor
US5923970A (en) * 1997-11-20 1999-07-13 Advanced Technology Materials, Inc. Method of fabricating a ferrolelectric capacitor with a graded barrier layer structure
TW457555B (en) * 1998-03-09 2001-10-01 Siemens Ag Surface passivation using silicon oxynitride
US5946567A (en) * 1998-03-20 1999-08-31 Taiwan Semiconductor Manufacturing Company, Ltd. Method for making metal capacitors for deep submicrometer processes for semiconductor integrated circuits
US6229167B1 (en) * 1998-03-24 2001-05-08 Rohm Co., Ltd. Semiconductor device and method of manufacturing the same
US6225156B1 (en) * 1998-04-17 2001-05-01 Symetrix Corporation Ferroelectric integrated circuit having low sensitivity to hydrogen exposure and method for fabricating same
KR100292942B1 (ko) * 1998-04-18 2001-07-12 윤종용 강유전체메모리장치의제조방법
US6093585A (en) * 1998-05-08 2000-07-25 Lsi Logic Corporation High voltage tolerant thin film transistor
US6060389A (en) * 1998-05-11 2000-05-09 Advanced Micro Devices, Inc. Semiconductor fabrication employing a conformal layer of CVD deposited TiN at the periphery of an interconnect
US6040227A (en) * 1998-05-29 2000-03-21 Taiwan Semiconductor Manufacturing Company IPO deposited with low pressure O3 -TEOS for planarization in multi-poly memory technology
US6232131B1 (en) 1998-06-24 2001-05-15 Matsushita Electronics Corporation Method for manufacturing semiconductor device with ferroelectric capacitors including multiple annealing steps
JP2000021892A (ja) * 1998-06-26 2000-01-21 Nec Corp 半導体装置の製造方法
US6300672B1 (en) * 1998-07-22 2001-10-09 Siemens Aktiengesellschaft Silicon oxynitride cap for fluorinated silicate glass film in intermetal dielectric semiconductor fabrication
US6586790B2 (en) * 1998-07-24 2003-07-01 Kabushiki Kaisha Toshiba Semiconductor device and method for manufacturing the same
US6509601B1 (en) 1998-07-31 2003-01-21 Samsung Electronics Co., Ltd. Semiconductor memory device having capacitor protection layer and method for manufacturing the same
US6046490A (en) * 1998-08-10 2000-04-04 Matsushita Electronics Corporation Semiconductor device having a capacitor dielectric element and wiring layers
JP3114710B2 (ja) 1998-11-30 2000-12-04 日本電気株式会社 強誘電体メモリ及びその製造方法
TW434877B (en) 1998-12-03 2001-05-16 Matsushita Electronics Corp Semiconductor memory device and method for manufacturing the same
US6300190B1 (en) * 1998-12-09 2001-10-09 Matsushita Electric Industrial Co., Ltd. Method for fabricating semiconductor integrated circuit device
JP2000183296A (ja) * 1998-12-16 2000-06-30 Rohm Co Ltd 半導体装置および半導体装置の製造方法
US6359328B1 (en) * 1998-12-31 2002-03-19 Intel Corporation Methods for making interconnects and diffusion barriers in integrated circuits
DE19904379A1 (de) * 1999-02-03 2000-08-17 Siemens Ag Mikroelektronische Struktur
KR100280288B1 (ko) * 1999-02-04 2001-01-15 윤종용 반도체 집적회로의 커패시터 제조방법
US6171899B1 (en) * 1999-03-12 2001-01-09 United Microelectronics Corp. Method for fabricating a capacitor
US6232197B1 (en) * 1999-04-07 2001-05-15 United Microelectronics Corp, Metal-insulator-metal capacitor
US6255122B1 (en) 1999-04-27 2001-07-03 International Business Machines Corporation Amorphous dielectric capacitors on silicon
US6388285B1 (en) 1999-06-04 2002-05-14 International Business Machines Corporation Feram cell with internal oxygen source and method of oxygen release
JP2001057426A (ja) * 1999-06-10 2001-02-27 Fuji Electric Co Ltd 高耐圧半導体装置およびその製造方法
KR100329781B1 (ko) * 1999-06-28 2002-03-25 박종섭 수소확산을 방지할 수 있는 강유전체 메모리 소자 제조 방법
JP2001015696A (ja) * 1999-06-29 2001-01-19 Nec Corp 水素バリヤ層及び半導体装置
US6225681B1 (en) * 1999-09-07 2001-05-01 Conexant Systems, Inc. Microelectronic interconnect structures and methods for forming the same
JP3950290B2 (ja) * 1999-09-10 2007-07-25 三星電子株式会社 キャパシタ保護膜を含む半導体メモリ素子及びその製造方法
US6251724B1 (en) * 1999-11-01 2001-06-26 Taiwan Semiconductor Manufacturing Company Method to increase the clear ration of capacitor silicon nitride to improve the threshold voltage uniformity
US6245683B1 (en) * 1999-12-28 2001-06-12 Taiwan Semiconductor Manufacturing Company Stress relieve pattern for damascene process
DE10000005C1 (de) * 2000-01-03 2001-09-13 Infineon Technologies Ag Verfahren zur Herstellung eines ferroelektrischen Halbleiterspeichers
JP2001284526A (ja) * 2000-03-28 2001-10-12 Nec Yamagata Ltd 半導体集積回路用ｍｉｍ容量装置
JP2001284347A (ja) * 2000-03-31 2001-10-12 Canon Sales Co Inc 成膜方法及び半導体装置の製造方法
US6483044B1 (en) 2000-08-23 2002-11-19 Micron Technology, Inc. Interconnecting substrates for electrical coupling of microelectronic components
DE10041685C2 (de) 2000-08-24 2002-06-27 Infineon Technologies Ag Verfahren zur Herstellung eines mikroelektronischen Bauelements
JP4025829B2 (ja) * 2000-09-18 2007-12-26 富士通株式会社 半導体装置及びその製造方法
US6750113B2 (en) * 2001-01-17 2004-06-15 International Business Machines Corporation Metal-insulator-metal capacitor in copper
DE10121657B4 (de) 2001-05-03 2010-02-11 Qimonda Ag Mikroelektronische Struktur mit Wasserstoffbarrierenschicht
KR100889351B1 (ko) * 2001-05-15 2009-03-18 가부시키가이샤 에바라 세이사꾸쇼 Ｔｄｉ 검출 디바이스, 피드-스루 장비 및 이들 디바이스를 이용하는 전자빔 장치
TW548860B (en) * 2001-06-20 2003-08-21 Semiconductor Energy Lab Light emitting device and method of manufacturing the same
JP3839281B2 (ja) * 2001-07-05 2006-11-01 株式会社ルネサステクノロジ 半導体装置の製造方法
KR20030038522A (ko) * 2001-11-09 2003-05-16 산요 덴키 가부시키가이샤 광학 소자의 휘도 데이터를 초기화하는 기능을 갖는 표시장치
JP2003152165A (ja) 2001-11-15 2003-05-23 Fujitsu Ltd 半導体装置およびその製造方法
JP2003186437A (ja) * 2001-12-18 2003-07-04 Sanyo Electric Co Ltd 表示装置
JP2003255899A (ja) * 2001-12-28 2003-09-10 Sanyo Electric Co Ltd 表示装置
JP3953330B2 (ja) 2002-01-25 2007-08-08 三洋電機株式会社 表示装置
JP3723507B2 (ja) * 2002-01-29 2005-12-07 三洋電機株式会社 駆動回路
JP2003295825A (ja) * 2002-02-04 2003-10-15 Sanyo Electric Co Ltd 表示装置
JP2003308030A (ja) 2002-02-18 2003-10-31 Sanyo Electric Co Ltd 表示装置
US6610262B1 (en) * 2002-03-04 2003-08-26 Taiwan Semiconductor Manufacturing Company Depletion mode SCR for low capacitance ESD input protection
JP2003257645A (ja) * 2002-03-05 2003-09-12 Sanyo Electric Co Ltd 発光装置およびその製造方法
JP2003332058A (ja) * 2002-03-05 2003-11-21 Sanyo Electric Co Ltd エレクトロルミネッセンスパネルおよびその製造方法
JP2003258094A (ja) * 2002-03-05 2003-09-12 Sanyo Electric Co Ltd 配線構造、その製造方法、および表示装置
CN100517422C (zh) * 2002-03-07 2009-07-22 三洋电机株式会社 配线结构、其制造方法、以及光学设备
JP3671012B2 (ja) * 2002-03-07 2005-07-13 三洋電機株式会社 表示装置
JP3837344B2 (ja) * 2002-03-11 2006-10-25 三洋電機株式会社 光学素子およびその製造方法
JP3847683B2 (ja) * 2002-08-28 2006-11-22 富士通株式会社 半導体装置の製造方法
US20040120097A1 (en) * 2002-12-23 2004-06-24 Chambers Stephen T. Methods of forming metal-insulator-metal capacitors
US7019352B2 (en) * 2003-08-07 2006-03-28 Texas Instruments Incorporated Low silicon-hydrogen sin layer to inhibit hydrogen related degradation in semiconductor devices having ferroelectric components
KR100558006B1 (ko) * 2003-11-17 2006-03-06 삼성전자주식회사 니켈 샐리사이드 공정들 및 이를 사용하여 반도체소자를제조하는 방법들
JP2006344783A (ja) * 2005-06-09 2006-12-21 Fujitsu Ltd 半導体装置及びその製造方法
JP2007142109A (ja) * 2005-11-17 2007-06-07 Tdk Corp 電子部品
US7696603B2 (en) * 2006-01-26 2010-04-13 Texas Instruments Incorporated Back end thin film capacitor having both plates of thin film resistor material at single metallization layer
JP4823833B2 (ja) * 2006-09-25 2011-11-24 住友電工デバイス・イノベーション株式会社 電子装置の製造方法および電子装置の制御方法
US7833456B2 (en) * 2007-02-23 2010-11-16 Micron Technology, Inc. Systems and methods for compressing an encapsulant adjacent a semiconductor workpiece
US20080223975A1 (en) * 2007-03-14 2008-09-18 Miroslav Planeta Reversible surface winder
US8723654B2 (en) 2010-07-09 2014-05-13 Cypress Semiconductor Corporation Interrupt generation and acknowledgment for RFID
US9846664B2 (en) 2010-07-09 2017-12-19 Cypress Semiconductor Corporation RFID interface and interrupt
US9092582B2 (en) 2010-07-09 2015-07-28 Cypress Semiconductor Corporation Low power, low pin count interface for an RFID transponder
US8373215B2 (en) * 2010-10-25 2013-02-12 Texas Instruments Incorporated Zero temperature coefficient capacitor
US10367089B2 (en) 2011-03-28 2019-07-30 General Electric Company Semiconductor device and method for reduced bias threshold instability
DE102016117239A1 (de) 2016-09-14 2018-03-15 USound GmbH Verfahren und Schaltung zum Betreiben eines Piezo-Bauteils sowie einen integrierten Schaltkreis mit einer derartigen Schaltung

Family Cites Families (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE234384C (de) *
US3481781A (en) * 1967-03-17 1969-12-02 Rca Corp Silicate glass coating of semiconductor devices
DE2517743C3 (de) * 1975-04-22 1980-03-06 Jenaer Glaswerk Schott & Gen., 6500 Mainz Passivierender Schutzüberzug für Siliziumhalbleiterbauelemente
US4091407A (en) * 1976-11-01 1978-05-23 Rca Corporation Combination glass/low temperature deposited Siw Nx Hy O.sub.z
US4371587A (en) * 1979-12-17 1983-02-01 Hughes Aircraft Company Low temperature process for depositing oxide layers by photochemical vapor deposition
DE3013866C2 (de) * 1980-04-10 1984-01-12 Allit-Plastikwerk Kimnach & Co, 6550 Bad Kreuznach Vorrichtung zum Deponieren einer Vielzahl gleichförmiger Waren und zum Darbieten der Waren als Einzelstücke für die Entnahme
CA1204527A (en) * 1982-08-13 1986-05-13 Theodore F. Retajczyk, Jr. Polymeric films for electronic circuits
JPS59110122A (ja) 1982-12-15 1984-06-26 Nec Corp 窒化膜を有する半導体集積回路装置
JPS6014462A (ja) * 1983-07-05 1985-01-25 Oki Electric Ind Co Ltd 半導体メモリ素子
JPS6116562A (ja) * 1984-07-03 1986-01-24 Matsushita Electronics Corp 半導体装置
US4692786A (en) * 1985-02-07 1987-09-08 Lindenfelser Timothy M Semi-conductor device with sandwich passivation coating
US4901133A (en) * 1986-04-02 1990-02-13 Texas Instruments Incorporated Multilayer semi-insulating film for hermetic wafer passivation and method for making same
US4772985A (en) * 1986-09-24 1988-09-20 Kabushiki Kaisha Toshiba Thick film capacitor
JPH0752772B2 (ja) * 1986-11-22 1995-06-05 ヤマハ株式会社 半導体装置の製法
US5046043A (en) * 1987-10-08 1991-09-03 National Semiconductor Corporation Ferroelectric capacitor and memory cell including barrier and isolation layers
US5065222A (en) * 1987-11-11 1991-11-12 Seiko Instruments Inc. Semiconductor device having two-layered passivation film
JPH01265524A (ja) * 1988-04-15 1989-10-23 Sony Corp 半導体装置
JPH0210856A (ja) * 1988-06-29 1990-01-16 Matsushita Electron Corp 半導体装置の製造方法
JPH02144915A (ja) * 1988-11-25 1990-06-04 Matsushita Electric Works Ltd 半導体装置
JPH02184079A (ja) * 1989-01-11 1990-07-18 Seiko Epson Corp 強誘電体記憶装置の形成法
KR940006708B1 (ko) * 1989-01-26 1994-07-25 세이꼬 엡슨 가부시끼가이샤 반도체 장치의 제조 방법
JP2830019B2 (ja) * 1989-03-07 1998-12-02 セイコーエプソン株式会社 半導体装置
EP0396221B1 (de) * 1989-05-05 1995-09-27 Ramtron International Corporation Integrierter ferro-elektrischer Kondensator
JPH03198338A (ja) * 1989-12-27 1991-08-29 Handotai Process Kenkyusho:Kk 気相成長膜の形成方法および半導体装置
US5128279A (en) * 1990-03-05 1992-07-07 Vlsi Technology, Inc. Charge neutralization using silicon-enriched oxide layer
JPH0482265A (ja) * 1990-07-24 1992-03-16 Seiko Epson Corp 半導体装置の製造方法
JPH0485878A (ja) * 1990-07-26 1992-03-18 Seiko Epson Corp 半導体装置
JP3131982B2 (ja) * 1990-08-21 2001-02-05 セイコーエプソン株式会社 半導体装置、半導体メモリ及び半導体装置の製造方法
WO1992006498A1 (en) * 1990-09-28 1992-04-16 Seiko Epson Corporation Semiconductor device
TW214599B (de) * 1990-10-15 1993-10-11 Seiko Epson Corp
DE69213094T2 (de) * 1991-05-08 1997-03-06 Philips Electronics Nv Verfahren zur Herstellung einer Halbleiteranordnung mit einem Kondensator mit einem ferroelektrischen Dieletrikum und Halbleiteranordnung mit einem derartigen Kondensator
US5139971A (en) * 1991-06-07 1992-08-18 Intel Corporation Anneal to decrease moisture absorbance of intermetal dielectrics
JPH05166946A (ja) * 1991-12-19 1993-07-02 Toshiba Corp 半導体装置の製造方法
JPH05190799A (ja) * 1992-01-08 1993-07-30 Sharp Corp 半導体記憶装置およびその製造方法
EP0557937A1 (de) * 1992-02-25 1993-09-01 Ramtron International Corporation Ozongasverarbeitung für ferroelektrischen Speicherschaltungen
JPH05243223A (ja) * 1992-02-28 1993-09-21 Fujitsu Ltd 集積回路装置の製造方法
JPH0685173A (ja) * 1992-07-17 1994-03-25 Toshiba Corp 半導体集積回路用キャパシタ
US5350705A (en) * 1992-08-25 1994-09-27 National Semiconductor Corporation Ferroelectric memory cell arrangement having a split capacitor plate structure
US5439840A (en) * 1993-08-02 1995-08-08 Motorola, Inc. Method of forming a nonvolatile random access memory capacitor cell having a metal-oxide dielectric
US5622893A (en) * 1994-08-01 1997-04-22 Texas Instruments Incorporated Method of forming conductive noble-metal-insulator-alloy barrier layer for high-dielectric-constant material electrodes
US5576240A (en) * 1994-12-09 1996-11-19 Lucent Technologies Inc. Method for making a metal to metal capacitor
US5571746A (en) * 1995-10-19 1996-11-05 Chartered Semiconductor Manufacturing Pte Ltd. Method of forming a back end capacitor with high unit capacitance
US5593914A (en) * 1996-03-19 1997-01-14 Radiant Technologies, Inc. Method for constructing ferroelectric capacitor-like structures on silicon dioxide surfaces
KR100258979B1 (ko) * 1997-08-14 2000-06-15 윤종용 유전막을 수소 분위기에서 열처리하는 반도체장치의 커패시터 제조방법

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DE69426208T2 (de) 2001-05-17
CN1038210C (zh) 1998-04-29
EP0738014A3 (de) 1998-04-15
US5780351A (en) 1998-07-14
DE69434606T2 (de) 2006-11-30
EP0738013B1 (de) 2003-10-15
EP0739037B1 (de) 2000-10-25
DE69434606D1 (de) 2006-03-30
EP0642167A2 (de) 1995-03-08
US6015987A (en) 2000-01-18
DE69426208D1 (de) 2000-11-30
EP0642167A3 (de) 1995-06-28
US5624864A (en) 1997-04-29
EP0739037A2 (de) 1996-10-23
DE69433244T2 (de) 2004-07-29
DE69432643D1 (de) 2003-06-12
EP0736905A2 (de) 1996-10-09
EP0736905B1 (de) 2006-01-04
EP0738009B1 (de) 2003-05-07
US6333528B1 (en) 2001-12-25
DE69433245T2 (de) 2004-07-22
DE69433244D1 (de) 2003-11-20
EP0738013A3 (de) 1998-04-22
EP0738014A2 (de) 1996-10-16
CN1102731A (zh) 1995-05-17
CN1189687A (zh) 1998-08-05
EP0736905A3 (de) 1998-04-22
EP0738013A2 (de) 1996-10-16
EP0739037A3 (de) 1998-04-29
US6169304B1 (en) 2001-01-02
DE69432643T2 (de) 2004-04-08
CN1107345C (zh) 2003-04-30
EP0738009A3 (de) 1998-04-15
KR0157099B1 (ko) 1998-10-15
KR950007084A (ko) 1995-03-21
US6107657A (en) 2000-08-22
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DE69434606T8 (de) 2007-05-16
EP0738014B1 (de) 2003-10-15

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