DE69506000D1 - Verfahren zum beschichten von durchgangslöchern mit hilfe eines lasers - Google Patents

Verfahren zum beschichten von durchgangslöchern mit hilfe eines lasers

Info

Publication number
DE69506000D1
DE69506000D1 DE69506000T DE69506000T DE69506000D1 DE 69506000 D1 DE69506000 D1 DE 69506000D1 DE 69506000 T DE69506000 T DE 69506000T DE 69506000 T DE69506000 T DE 69506000T DE 69506000 D1 DE69506000 D1 DE 69506000D1
Authority
DE
Germany
Prior art keywords
aid
laser
coating
holes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69506000T
Other languages
English (en)
Other versions
DE69506000T2 (de
Inventor
Mark Owen
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Electro Scientific Industries Inc
Original Assignee
Electro Scientific Industries Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Electro Scientific Industries Inc filed Critical Electro Scientific Industries Inc
Application granted granted Critical
Publication of DE69506000D1 publication Critical patent/DE69506000D1/de
Publication of DE69506000T2 publication Critical patent/DE69506000T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • B23K26/384—Removing material by boring or cutting by boring of specially shaped holes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/38—Removing material by boring or cutting
    • B23K26/382—Removing material by boring or cutting by boring
    • B23K26/389—Removing material by boring or cutting by boring of fluid openings, e.g. nozzles, jets
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/046—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/048—Coating on selected surface areas, e.g. using masks using irradiation by energy or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/28—Vacuum evaporation by wave energy or particle radiation
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
    • H05K3/0032—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material
    • H05K3/0035—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material of blind holes, i.e. having a metal layer at the bottom
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
    • H05K3/0032—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material
    • H05K3/0038—Etching of the substrate by chemical or physical means by laser ablation of organic insulating material combined with laser drilling through a metal layer
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4038—Through-connections; Vertical interconnect access [VIA] connections
    • H05K3/4076—Through-connections; Vertical interconnect access [VIA] connections by thin-film techniques
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/08—Non-ferrous metals or alloys
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/08—Non-ferrous metals or alloys
    • B23K2103/10—Aluminium or alloys thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/08—Non-ferrous metals or alloys
    • B23K2103/12—Copper or alloys thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/08—Non-ferrous metals or alloys
    • B23K2103/14—Titanium or alloys thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/16—Composite materials, e.g. fibre reinforced
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/18—Dissimilar materials
    • B23K2103/26—Alloys of Nickel and Cobalt and Chromium
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/30—Organic material
    • B23K2103/40—Paper
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/30—Organic material
    • B23K2103/42—Plastics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2103/00—Materials to be soldered, welded or cut
    • B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
    • B23K2103/54—Glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
    • H05K2203/107—Using laser light
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
    • H05K2203/107—Using laser light
    • H05K2203/108—Using a plurality of lasers or laser light with a plurality of wavelengths
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
    • H05K3/027—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed by irradiation, e.g. by photons, alpha or beta particles
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/425—Plated through-holes or plated via connections characterised by the sequence of steps for plating the through-holes or via connections in relation to the conductive pattern
    • H05K3/427—Plated through-holes or plated via connections characterised by the sequence of steps for plating the through-holes or via connections in relation to the conductive pattern initial plating of through-holes in metal-clad substrates
DE69506000T 1994-10-20 1995-07-06 Verfahren zum beschichten von durchgangslöchern mit hilfe eines lasers Expired - Fee Related DE69506000T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/327,484 US5614114A (en) 1994-07-18 1994-10-20 Laser system and method for plating vias
PCT/US1995/008474 WO1996012830A1 (en) 1994-10-20 1995-07-06 Laser method for plating vias

Publications (2)

Publication Number Publication Date
DE69506000D1 true DE69506000D1 (de) 1998-12-17
DE69506000T2 DE69506000T2 (de) 1999-06-02

Family

ID=23276727

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69506000T Expired - Fee Related DE69506000T2 (de) 1994-10-20 1995-07-06 Verfahren zum beschichten von durchgangslöchern mit hilfe eines lasers
DE19581659T Ceased DE19581659T1 (de) 1994-10-20 1995-07-06 Lagersystem und Verfahren zum Metallisieren von Durchgängen

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE19581659T Ceased DE19581659T1 (de) 1994-10-20 1995-07-06 Lagersystem und Verfahren zum Metallisieren von Durchgängen

Country Status (9)

Country Link
US (1) US5614114A (de)
EP (1) EP0787219B1 (de)
JP (1) JP2948915B2 (de)
KR (1) KR100258286B1 (de)
CH (1) CH688415A5 (de)
DE (2) DE69506000T2 (de)
HK (1) HK1001866A1 (de)
TW (1) TW285783B (de)
WO (1) WO1996012830A1 (de)

Families Citing this family (123)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5841099A (en) * 1994-07-18 1998-11-24 Electro Scientific Industries, Inc. Method employing UV laser pulses of varied energy density to form depthwise self-limiting blind vias in multilayered targets
US5932119A (en) * 1996-01-05 1999-08-03 Lazare Kaplan International, Inc. Laser marking system
US6350326B1 (en) 1996-01-15 2002-02-26 The University Of Tennessee Research Corporation Method for practicing a feedback controlled laser induced surface modification
US5955154A (en) * 1996-05-09 1999-09-21 Seagate Technology, Inc. Magnetic recording medium with laser textured glass or glass-ceramic substrate
EP0897576B1 (de) * 1996-05-09 2000-03-15 Seagate Technology, Inc. Laserstrukturierung eines magnetischen aufzeichnungsmediums unter verwendung einer mehrfachlinsenfokussierung
US7062845B2 (en) * 1996-06-05 2006-06-20 Laservia Corporation Conveyorized blind microvia laser drilling system
US6020045A (en) * 1996-06-05 2000-02-01 Seagate Technology, Inc. Textured magnetic recording medium having a transition zone
DE69715589T2 (de) * 1996-07-26 2003-05-22 Koninkl Philips Electronics Nv Verfahren zur herstellung und zum transferieren metallischer tropfen
US6023041A (en) * 1996-11-08 2000-02-08 W.L. Gore & Associates, Inc. Method for using photoabsorptive coatings and consumable copper to control exit via redeposit as well as diameter variance
US5879787A (en) * 1996-11-08 1999-03-09 W. L. Gore & Associates, Inc. Method and apparatus for improving wireability in chip modules
US5731047A (en) * 1996-11-08 1998-03-24 W.L. Gore & Associates, Inc. Multiple frequency processing to improve electrical resistivity of blind micro-vias
JP2956830B2 (ja) * 1996-11-21 1999-10-04 日本電気株式会社 半導体装置の製造方法
US5998759A (en) 1996-12-24 1999-12-07 General Scanning, Inc. Laser processing
US5773790A (en) * 1997-01-21 1998-06-30 General Electric Company Beam blocking material and method for beam drilling and inspecting cooling holes
US5973290A (en) * 1997-02-26 1999-10-26 W. L. Gore & Associates, Inc. Laser apparatus having improved via processing rate
US6090102A (en) * 1997-05-12 2000-07-18 Irvision, Inc. Short pulse mid-infrared laser source for surgery
US5858478A (en) * 1997-12-02 1999-01-12 The Aerospace Corporation Magnetic field pulsed laser deposition of thin films
US6266857B1 (en) * 1998-02-17 2001-07-31 Microsound Systems, Inc. Method of producing a backing structure for an ultrasound transceiver
US6406939B1 (en) 1998-05-02 2002-06-18 Charles W. C. Lin Flip chip assembly with via interconnection
SG75841A1 (en) 1998-05-02 2000-10-24 Eriston Invest Pte Ltd Flip chip assembly with via interconnection
SG82590A1 (en) 1998-12-17 2001-08-21 Eriston Technologies Pte Ltd Bumpless flip chip assembly with strips and via-fill
TW522536B (en) 1998-12-17 2003-03-01 Wen-Chiang Lin Bumpless flip chip assembly with strips-in-via and plating
SG82591A1 (en) 1998-12-17 2001-08-21 Eriston Technologies Pte Ltd Bumpless flip chip assembly with solder via
US6294225B1 (en) 1999-05-10 2001-09-25 The University Of Tennessee Research Corporation Method for improving the wear and corrosion resistance of material transport trailer surfaces
US6173886B1 (en) 1999-05-24 2001-01-16 The University Of Tennessee Research Corportion Method for joining dissimilar metals or alloys
US6299707B1 (en) 1999-05-24 2001-10-09 The University Of Tennessee Research Corporation Method for increasing the wear resistance in an aluminum cylinder bore
US6497985B2 (en) 1999-06-09 2002-12-24 University Of Tennessee Research Corporation Method for marking steel and aluminum alloys
US6093472A (en) * 1999-06-23 2000-07-25 Seagate Technology, Inc. Magnetic recording medium with laser textured glass or glass-ceramic substrate
JP3238380B2 (ja) * 1999-07-02 2001-12-10 日本メクトロン株式会社 回路基板の微細スル−ホ−ル導通部の形成法
US6423162B1 (en) 1999-07-02 2002-07-23 The University Of Tennesse Research Corporation Method for producing decorative appearing bumper surfaces
US6284067B1 (en) 1999-07-02 2001-09-04 The University Of Tennessee Research Corporation Method for producing alloyed bands or strips on pistons for internal combustion engines
US6675469B1 (en) * 1999-08-11 2004-01-13 Tessera, Inc. Vapor phase connection techniques
WO2001011662A2 (en) * 1999-08-11 2001-02-15 Tessera, Inc. Vapor phase connection techniques
US20010027965A1 (en) * 1999-10-07 2001-10-11 Mccay Mary Helen Method for gas assisted energy beam engraving of a target object
US6256121B1 (en) 1999-10-08 2001-07-03 Nanovia, Lp Apparatus for ablating high-density array of vias or indentation in surface of object
US6653593B2 (en) 1999-10-08 2003-11-25 Nanovia, Lp Control system for ablating high-density array of vias or indentation in surface of object
US6420675B1 (en) 1999-10-08 2002-07-16 Nanovia, Lp Control system for ablating high-density array of vias or indentation in surface of object
US6886284B2 (en) * 1999-10-08 2005-05-03 Identification Dynamics, Llc Firearm microstamping and micromarking insert for stamping a firearm identification code and serial number into cartridge shell casings and projectiles
US6310701B1 (en) 1999-10-08 2001-10-30 Nanovia Lp Method and apparatus for ablating high-density array of vias or indentation in surface of object
US6833911B2 (en) 1999-10-08 2004-12-21 Identification Dynamics, Inc. Method and apparatus for reading firearm microstamping
US7111423B2 (en) * 1999-10-08 2006-09-26 Identification Dynamics, Llc Method and apparatus for reading firearm microstamping
US6328026B1 (en) 1999-10-13 2001-12-11 The University Of Tennessee Research Corporation Method for increasing wear resistance in an engine cylinder bore and improved automotive engine
US6229111B1 (en) 1999-10-13 2001-05-08 The University Of Tennessee Research Corporation Method for laser/plasma surface alloying
US6339208B1 (en) * 2000-01-19 2002-01-15 General Electric Company Method of forming cooling holes
US6541731B2 (en) 2000-01-25 2003-04-01 Aculight Corporation Use of multiple laser sources for rapid, flexible machining and production of vias in multi-layered substrates
US6509546B1 (en) 2000-03-15 2003-01-21 International Business Machines Corporation Laser excision of laminate chip carriers
US6403211B1 (en) 2000-07-18 2002-06-11 3M Innovative Properties Company Liquid crystal polymer for flexible circuits
US6696163B2 (en) 2000-07-18 2004-02-24 3M Innovative Properties Company Liquid crystal polymers for flexible circuits
US6923919B2 (en) 2000-07-18 2005-08-02 3M Innovative Properties Company Liquid crystal polymers for flexible circuits
US6562709B1 (en) 2000-08-22 2003-05-13 Charles W. C. Lin Semiconductor chip assembly with simultaneously electroplated contact terminal and connection joint
US6403460B1 (en) 2000-08-22 2002-06-11 Charles W. C. Lin Method of making a semiconductor chip assembly
US6660626B1 (en) 2000-08-22 2003-12-09 Charles W. C. Lin Semiconductor chip assembly with simultaneously electrolessly plated contact terminal and connection joint
US6551861B1 (en) 2000-08-22 2003-04-22 Charles W. C. Lin Method of making a semiconductor chip assembly by joining the chip to a support circuit with an adhesive
US6436734B1 (en) 2000-08-22 2002-08-20 Charles W. C. Lin Method of making a support circuit for a semiconductor chip assembly
US6350633B1 (en) 2000-08-22 2002-02-26 Charles W. C. Lin Semiconductor chip assembly with simultaneously electroplated contact terminal and connection joint
US6402970B1 (en) 2000-08-22 2002-06-11 Charles W. C. Lin Method of making a support circuit for a semiconductor chip assembly
US6562657B1 (en) 2000-08-22 2003-05-13 Charles W. C. Lin Semiconductor chip assembly with simultaneously electrolessly plated contact terminal and connection joint
US6511865B1 (en) 2000-09-20 2003-01-28 Charles W. C. Lin Method for forming a ball bond connection joint on a conductive trace and conductive pad in a semiconductor chip assembly
US6350632B1 (en) 2000-09-20 2002-02-26 Charles W. C. Lin Semiconductor chip assembly with ball bond connection joint
US6676878B2 (en) * 2001-01-31 2004-01-13 Electro Scientific Industries, Inc. Laser segmented cutting
US6350386B1 (en) 2000-09-20 2002-02-26 Charles W. C. Lin Method of making a support circuit with a tapered through-hole for a semiconductor chip assembly
US6448108B1 (en) 2000-10-02 2002-09-10 Charles W. C. Lin Method of making a semiconductor chip assembly with a conductive trace subtractively formed before and after chip attachment
US6544813B1 (en) 2000-10-02 2003-04-08 Charles W. C. Lin Method of making a semiconductor chip assembly with a conductive trace subtractively formed before and after chip attachment
JP4134503B2 (ja) * 2000-10-11 2008-08-20 松下電器産業株式会社 回路形成基板の製造方法
US7190080B1 (en) 2000-10-13 2007-03-13 Bridge Semiconductor Corporation Semiconductor chip assembly with embedded metal pillar
US7414319B2 (en) * 2000-10-13 2008-08-19 Bridge Semiconductor Corporation Semiconductor chip assembly with metal containment wall and solder terminal
US7319265B1 (en) 2000-10-13 2008-01-15 Bridge Semiconductor Corporation Semiconductor chip assembly with precision-formed metal pillar
US6548393B1 (en) 2000-10-13 2003-04-15 Charles W. C. Lin Semiconductor chip assembly with hardened connection joint
US6740576B1 (en) 2000-10-13 2004-05-25 Bridge Semiconductor Corporation Method of making a contact terminal with a plated metal peripheral sidewall portion for a semiconductor chip assembly
US6984576B1 (en) 2000-10-13 2006-01-10 Bridge Semiconductor Corporation Method of connecting an additively and subtractively formed conductive trace and an insulative base to a semiconductor chip
US6492252B1 (en) 2000-10-13 2002-12-10 Bridge Semiconductor Corporation Method of connecting a bumped conductive trace to a semiconductor chip
US6576493B1 (en) 2000-10-13 2003-06-10 Bridge Semiconductor Corporation Method of connecting a conductive trace and an insulative base to a semiconductor chip using multiple etch steps
US7094676B1 (en) 2000-10-13 2006-08-22 Bridge Semiconductor Corporation Semiconductor chip assembly with embedded metal pillar
US6440835B1 (en) 2000-10-13 2002-08-27 Charles W. C. Lin Method of connecting a conductive trace to a semiconductor chip
US7075186B1 (en) 2000-10-13 2006-07-11 Bridge Semiconductor Corporation Semiconductor chip assembly with interlocked contact terminal
US7264991B1 (en) 2000-10-13 2007-09-04 Bridge Semiconductor Corporation Method of connecting a conductive trace to a semiconductor chip using conductive adhesive
US7009297B1 (en) 2000-10-13 2006-03-07 Bridge Semiconductor Corporation Semiconductor chip assembly with embedded metal particle
US6699780B1 (en) 2000-10-13 2004-03-02 Bridge Semiconductor Corporation Method of connecting a conductive trace to a semiconductor chip using plasma undercut etching
US7129575B1 (en) 2000-10-13 2006-10-31 Bridge Semiconductor Corporation Semiconductor chip assembly with bumped metal pillar
US7129113B1 (en) 2000-10-13 2006-10-31 Bridge Semiconductor Corporation Method of making a three-dimensional stacked semiconductor package with a metal pillar in an encapsulant aperture
US6908788B1 (en) 2000-10-13 2005-06-21 Bridge Semiconductor Corporation Method of connecting a conductive trace to a semiconductor chip using a metal base
US6667229B1 (en) 2000-10-13 2003-12-23 Bridge Semiconductor Corporation Method of connecting a bumped compliant conductive trace and an insulative base to a semiconductor chip
US7262082B1 (en) 2000-10-13 2007-08-28 Bridge Semiconductor Corporation Method of making a three-dimensional stacked semiconductor package with a metal pillar and a conductive interconnect in an encapsulant aperture
US6537851B1 (en) 2000-10-13 2003-03-25 Bridge Semiconductor Corporation Method of connecting a bumped compliant conductive trace to a semiconductor chip
US6949408B1 (en) 2000-10-13 2005-09-27 Bridge Semiconductor Corporation Method of connecting a conductive trace and an insulative base to a semiconductor chip using multiple etch steps
US6673710B1 (en) 2000-10-13 2004-01-06 Bridge Semiconductor Corporation Method of connecting a conductive trace and an insulative base to a semiconductor chip
US6872591B1 (en) 2000-10-13 2005-03-29 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with a conductive trace and a substrate
US6576539B1 (en) 2000-10-13 2003-06-10 Charles W.C. Lin Semiconductor chip assembly with interlocked conductive trace
US7132741B1 (en) 2000-10-13 2006-11-07 Bridge Semiconductor Corporation Semiconductor chip assembly with carved bumped terminal
US7071089B1 (en) 2000-10-13 2006-07-04 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with a carved bumped terminal
US6876072B1 (en) 2000-10-13 2005-04-05 Bridge Semiconductor Corporation Semiconductor chip assembly with chip in substrate cavity
US6444489B1 (en) 2000-12-15 2002-09-03 Charles W. C. Lin Semiconductor chip assembly with bumped molded substrate
US6689985B2 (en) 2001-01-17 2004-02-10 Orbotech, Ltd. Laser drill for use in electrical circuit fabrication
US6653170B1 (en) 2001-02-06 2003-11-25 Charles W. C. Lin Semiconductor chip assembly with elongated wire ball bonded to chip and electrolessly plated to support circuit
EP1409194A2 (de) * 2001-02-12 2004-04-21 Morgan T. Johnson Mikrobearbeitung von elektrischen strukturen
US7642484B2 (en) 2001-06-13 2010-01-05 Orbotech Ltd Multiple beam micro-machining system and method
DE10144008A1 (de) * 2001-09-07 2003-03-27 Siemens Ag Verfahren und Vorrichtung zum Erzeugen einer Bohrung in einem Werkstück mit Laserstrahlung
EP1677346B1 (de) * 2001-10-01 2011-12-14 Electro Scientific Industries, Inc. Bearbeiten von Substraten, insbesondere von Halbleitersubstraten
US7204419B2 (en) * 2003-05-01 2007-04-17 Identifcation Dynamics, Llc Method and apparatus for reading firearm microstamping
US20040084810A1 (en) * 2002-11-01 2004-05-06 Yung Winco Kam-Chuen Laser system for drilling and plating vias
US6809289B2 (en) * 2003-03-05 2004-10-26 The Hong Kong Polytechnic University Method of drilling a circuit board
US20050241203A1 (en) * 2003-05-01 2005-11-03 Lizotte Todd E Method and apparatus for cartridge identification imprinting in difficult contexts by recess protected indicia
US7521651B2 (en) * 2003-09-12 2009-04-21 Orbotech Ltd Multiple beam micro-machining system and method
US20060257929A1 (en) * 2003-11-12 2006-11-16 Microbiosystems, Limited Partnership Method for the rapid taxonomic identification of pathogenic microorganisms and their toxic proteins
US7993983B1 (en) 2003-11-17 2011-08-09 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with chip and encapsulant grinding
US7538415B1 (en) 2003-11-20 2009-05-26 Bridge Semiconductor Corporation Semiconductor chip assembly with bumped terminal, filler and insulative base
US7425759B1 (en) 2003-11-20 2008-09-16 Bridge Semiconductor Corporation Semiconductor chip assembly with bumped terminal and filler
US7268421B1 (en) 2004-11-10 2007-09-11 Bridge Semiconductor Corporation Semiconductor chip assembly with welded metal pillar that includes enlarged ball bond
US7446419B1 (en) 2004-11-10 2008-11-04 Bridge Semiconductor Corporation Semiconductor chip assembly with welded metal pillar of stacked metal balls
US7750483B1 (en) 2004-11-10 2010-07-06 Bridge Semiconductor Corporation Semiconductor chip assembly with welded metal pillar and enlarged plated contact terminal
US20060107525A1 (en) * 2004-11-22 2006-05-25 Hamburgen William R Method and system for creating alignment holes in a multilayer structure
US7544304B2 (en) * 2006-07-11 2009-06-09 Electro Scientific Industries, Inc. Process and system for quality management and analysis of via drilling
US7494843B1 (en) 2006-12-26 2009-02-24 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with thermal conductor and encapsulant grinding
US7811863B1 (en) 2006-10-26 2010-10-12 Bridge Semiconductor Corporation Method of making a semiconductor chip assembly with metal pillar and encapsulant grinding and heat sink attachment
US20090178839A1 (en) * 2007-03-14 2009-07-16 Toshiaki Takenaka Recognition mark and method for manufacturing circuit board
EP1990126B1 (de) * 2007-05-08 2012-11-21 Volvo Car Corporation Verfahren zum Laserschneiden eines bemalten oder mehr beschichteten Werkstückes unter Verwendung eines Skann-Laserstrahles
US7886437B2 (en) * 2007-05-25 2011-02-15 Electro Scientific Industries, Inc. Process for forming an isolated electrically conductive contact through a metal package
US20090120916A1 (en) * 2007-11-12 2009-05-14 L3 Communications Corporation Through-Via Laser Reflow Systems And Methods For Surface Mount Components
US20090312859A1 (en) * 2008-06-16 2009-12-17 Electro Scientific Industries, Inc. Modifying entry angles associated with circular tooling actions to improve throughput in part machining
US7943862B2 (en) * 2008-08-20 2011-05-17 Electro Scientific Industries, Inc. Method and apparatus for optically transparent via filling
DE102016002561B4 (de) 2015-10-19 2018-10-31 Steintex Walter vom Stein KG Verfahren zum Herstellen von Weblitzen und damit hergestelltes Erzeugnis
US11524366B2 (en) * 2018-07-26 2022-12-13 Coherent Munich GmbH & Co. KG Separation and release of laser-processed brittle material
WO2022172900A1 (ja) * 2021-02-12 2022-08-18 デンカ株式会社 セラミック板及びその製造方法、並びに、回路基板及びその製造方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3619C (de) * E. HAWKS in Leith (Grofsbritannien) Neuerungen an eisernen Oberbau-Konstruktionen für Eisenbahnen und Strafsenbahnen
US3562009A (en) * 1967-02-14 1971-02-09 Western Electric Co Method of providing electrically conductive substrate through-holes
DE1621355A1 (de) * 1967-06-09 1971-05-13 Steigerwald Strahltech Verfahren zur Behandlung der Innenflaechen von Bohrungen in Werkstuecken
US4059707A (en) * 1975-08-29 1977-11-22 Rca Corporation Method of filling apertures with crystalline material
DD223326A1 (de) * 1984-04-23 1985-06-05 Hermsdorf Keramik Veb Verfahren zum beschichten von loechern in substraten
US4628174A (en) * 1984-09-17 1986-12-09 General Electric Company Forming electrical conductors in long microdiameter holes
US4659587A (en) * 1984-10-11 1987-04-21 Hitachi, Ltd. Electroless plating process and process for producing multilayer wiring board
DE3682195D1 (de) * 1985-09-27 1991-11-28 Unisys Corp Verfahren zur herstellung einer konischen kontaktoeffnung in polyimid.
DE3619342A1 (de) * 1986-06-09 1987-12-10 Klaus Dr Rohr Innenbeschichten, innenlegieren, innenfuellen von durchgangsloechern mit hilfe des lasers
JPS6325913A (ja) * 1986-07-17 1988-02-03 Nec Corp 半導体薄膜の製造方法
US5060595A (en) * 1988-04-12 1991-10-29 Ziv Alan R Via filling by selective laser chemical vapor deposition
US4915981A (en) * 1988-08-12 1990-04-10 Rogers Corporation Method of laser drilling fluoropolymer materials
US5087396A (en) * 1988-09-15 1992-02-11 Unisys Corporation Method of forming holes in unfired ceramic layers of integrated circuit packages
JPH0734508B2 (ja) * 1989-04-10 1995-04-12 三菱電機株式会社 多層配線板
US5073687A (en) * 1989-06-22 1991-12-17 Canon Kabushiki Kaisha Method and apparatus for working print board by laser
US5063280A (en) * 1989-07-24 1991-11-05 Canon Kabushiki Kaisha Method and apparatus for forming holes into printed circuit board
US5108785A (en) * 1989-09-15 1992-04-28 Microlithics Corporation Via formation method for multilayer interconnect board
US5073518A (en) * 1989-11-27 1991-12-17 Micron Technology, Inc. Process to mechanically and plastically deform solid ductile metal to fill contacts of conductive channels with ductile metal and process for dry polishing excess metal from a semiconductor wafer
US5153408A (en) * 1990-10-31 1992-10-06 International Business Machines Corporation Method and structure for repairing electrical lines
US5093279A (en) * 1991-02-01 1992-03-03 International Business Machines Corporation Laser ablation damascene process
US5124780A (en) * 1991-06-10 1992-06-23 Micron Technology, Inc. Conductive contact plug and a method of forming a conductive contact plug in an integrated circuit using laser planarization
US5194713A (en) * 1991-10-17 1993-03-16 International Business Machines Corporation Removal of excimer laser debris using carbon dioxide laser
US5483100A (en) * 1992-06-02 1996-01-09 Amkor Electronics, Inc. Integrated circuit package with via interconnections formed in a substrate
US5340947A (en) * 1992-06-22 1994-08-23 Cirqon Technologies Corporation Ceramic substrates with highly conductive metal vias
JP3212405B2 (ja) * 1992-07-20 2001-09-25 富士通株式会社 エキシマレーザ加工方法及び装置
DE4232373A1 (de) * 1992-09-03 1994-03-10 Deutsche Forsch Luft Raumfahrt Verfahren zum Auftragen strukturierter Schichten

Also Published As

Publication number Publication date
JP2948915B2 (ja) 1999-09-13
DE69506000T2 (de) 1999-06-02
TW285783B (de) 1996-09-11
WO1996012830A1 (en) 1996-05-02
EP0787219A1 (de) 1997-08-06
KR100258286B1 (ko) 2000-06-01
KR970704904A (ko) 1997-09-06
DE19581659T1 (de) 1997-05-22
US5614114A (en) 1997-03-25
EP0787219B1 (de) 1998-11-11
JPH09511791A (ja) 1997-11-25
HK1001866A1 (en) 1998-07-17
CH688415A5 (de) 1997-09-15

Similar Documents

Publication Publication Date Title
DE69506000T2 (de) Verfahren zum beschichten von durchgangslöchern mit hilfe eines lasers
DE69530781D1 (de) Verfahren zum beschichten von platinaluminid mit cvd
FI963937A (fi) Menetelmä ja laite työkappaleessa toimivan säteen tai suihkun tarkkailemiseksi ja asemoimiseksi
DE69636740D1 (de) Verfahren zum selbsttätigen mehrlagenschweissen
DE69514809D1 (de) Verfahren zum reparieren von substraten
DE69305852D1 (de) Verfahren zur komplettierung eines verrohrungfreien bohrlochabschnittes
DE69834306D1 (de) Vorrichtung und Verfahren zum Auftrag einer Beschichtung
ATA29293A (de) Verfahren zum herstellen eines bandes, vorstreifens oder einer bramme
DE69622737T2 (de) Verfahren zur ermittlung der topologie eines netzwerkes von objekten
DE794839T1 (de) Verfahren zur beschichtung einer oberfläche
DE69815024D1 (de) Verfahren zum Beschichten eines Bauelementes
ATE238126T1 (de) Verfahren zum modulierten mig spritzschweissen
ATE234371T1 (de) Verfahren zum beschichten von kanten mit diamantähnlichem kohlenstoff
DE69300339T2 (de) Vorrichtung und Verfahren zum Steuern der Leistung eines Lasers.
DE69623949D1 (de) Verfahren zum mehrschichtbeschichten
DE69706754D1 (de) Verfahren und Halterung zum Beschichten der Spiegelflächen eines Laserstabs
DE69300501D1 (de) Verfahren zum Beschichten einer Vertiefung eines Nickelsubstrates mittels Laser.
DE59405190D1 (de) Verfahren zum galvanischen aufbringen einer oberflächenbeschichtung
DE69313568D1 (de) Verfahren zum Verbinden mit Hilfe von Polycarboran-Siloxan-Polymeren
DE59809500D1 (de) Verfahren zum herstellen eines metallischen wabenkörpers mit einer gasdurchlässigen lotfolie
DE59604614D1 (de) Verfahren zum ausbessern von beschichtungsfehlern
DE59711427D1 (de) Verfahren zum regeln der fokussierung und der führung eines lichtstrahls
DE69505326T2 (de) Verfahren und Vorrichtung zum Beschichten einer laufenden Filmbahn
DE59602422D1 (de) Verfahren zum Verbinden von zwei Werkstücken
DE59501663D1 (de) Verfahren zum verschweissen von werkstücken

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee