DE69511469T2 - Verfahren und Vorrichtung zur Herstellung von Diamanten - Google Patents

Verfahren und Vorrichtung zur Herstellung von Diamanten

Info

Publication number
DE69511469T2
DE69511469T2 DE69511469T DE69511469T DE69511469T2 DE 69511469 T2 DE69511469 T2 DE 69511469T2 DE 69511469 T DE69511469 T DE 69511469T DE 69511469 T DE69511469 T DE 69511469T DE 69511469 T2 DE69511469 T2 DE 69511469T2
Authority
DE
Germany
Prior art keywords
producing diamonds
diamonds
producing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69511469T
Other languages
English (en)
Other versions
DE69511469D1 (de
Inventor
Masataka Oji
Naoji Fujimori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Publication of DE69511469D1 publication Critical patent/DE69511469D1/de
Application granted granted Critical
Publication of DE69511469T2 publication Critical patent/DE69511469T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/26—Deposition of carbon only
    • C23C16/27—Diamond only
    • C23C16/271—Diamond only using hot filaments
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0209—Pretreatment of the material to be coated by heating
    • C23C16/0218—Pretreatment of the material to be coated by heating in a reactive atmosphere
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
DE69511469T 1994-06-13 1995-06-13 Verfahren und Vorrichtung zur Herstellung von Diamanten Expired - Lifetime DE69511469T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13050194A JP3498363B2 (ja) 1994-06-13 1994-06-13 ダイヤモンドの合成方法

Publications (2)

Publication Number Publication Date
DE69511469D1 DE69511469D1 (de) 1999-09-23
DE69511469T2 true DE69511469T2 (de) 2000-03-16

Family

ID=15035786

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69511469T Expired - Lifetime DE69511469T2 (de) 1994-06-13 1995-06-13 Verfahren und Vorrichtung zur Herstellung von Diamanten

Country Status (4)

Country Link
US (1) US5939140A (de)
EP (1) EP0687753B1 (de)
JP (1) JP3498363B2 (de)
DE (1) DE69511469T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL1004886C2 (nl) 1996-12-23 1998-06-24 Univ Utrecht Halfgeleiderinrichtingen en werkwijze voor het maken daarvan.
US6312808B1 (en) 1999-05-03 2001-11-06 Guardian Industries Corporation Hydrophobic coating with DLC & FAS on substrate
US6461731B1 (en) 1999-05-03 2002-10-08 Guardian Industries Corp. Solar management coating system including protective DLC
US6280834B1 (en) 1999-05-03 2001-08-28 Guardian Industries Corporation Hydrophobic coating including DLC and/or FAS on substrate
US6447891B1 (en) 1999-05-03 2002-09-10 Guardian Industries Corp. Low-E coating system including protective DLC
US6475573B1 (en) 1999-05-03 2002-11-05 Guardian Industries Corp. Method of depositing DLC inclusive coating on substrate
US6277480B1 (en) 1999-05-03 2001-08-21 Guardian Industries Corporation Coated article including a DLC inclusive layer(s) and a layer(s) deposited using siloxane gas, and corresponding method
US6368664B1 (en) 1999-05-03 2002-04-09 Guardian Industries Corp. Method of ion beam milling substrate prior to depositing diamond like carbon layer thereon
JP4710187B2 (ja) * 2000-08-30 2011-06-29 ソニー株式会社 多結晶シリコン層の成長方法および単結晶シリコン層のエピタキシャル成長方法
EP1448807A4 (de) * 2001-10-30 2005-07-13 Massachusetts Inst Technology Fluorkohlenstoff-organosilicium-copolymere und nach dem hfcvd-verfahren hergestellte überzüge
US7501330B2 (en) * 2002-12-05 2009-03-10 Intel Corporation Methods of forming a high conductivity diamond film and structures formed thereby
US20090017258A1 (en) * 2007-07-10 2009-01-15 Carlisle John A Diamond film deposition
JP5746839B2 (ja) * 2010-08-16 2015-07-08 株式会社アルバック 通電加熱線、成膜装置及び通電加熱線の製造方法
JP5803003B2 (ja) * 2011-07-07 2015-11-04 地方独立行政法人東京都立産業技術研究センター 熱フィラメントｃｖｄ装置及び成膜方法
WO2013168747A1 (ja) * 2012-05-09 2013-11-14 麒麟麦酒株式会社 複合発熱体並びにそれを用いた薄膜を備える成形体の製造方法及び発熱体ｃｖｄ装置
JP7061049B2 (ja) * 2018-09-10 2022-04-27 株式会社神戸製鋼所 熱フィラメントｃｖｄ装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61163273A (ja) * 1985-01-14 1986-07-23 Sumitomo Electric Ind Ltd 被覆硬質部材
JPS62202897A (ja) * 1986-02-28 1987-09-07 Toshiba Corp ダイヤモンドの製造方法
JPS63153815A (ja) * 1986-12-17 1988-06-27 Fujitsu Ltd ダイヤモンドの気相合成方法
JPS63159292A (ja) * 1986-12-23 1988-07-02 Showa Denko Kk ダイヤモンド膜の作製方法
US5071708A (en) * 1987-10-20 1991-12-10 Showa Denko K.K. Composite diamond grain
US5127983A (en) * 1989-05-22 1992-07-07 Sumitomo Electric Industries, Ltd. Method of producing single crystal of high-pressure phase material
JP2799744B2 (ja) * 1989-09-11 1998-09-21 株式会社半導体エネルギー研究所 ダイヤモンドを用いたサーミスタの作製方法
JP2775903B2 (ja) * 1989-10-04 1998-07-16 住友電気工業株式会社 ダイヤモンド半導体素子
US5250149A (en) * 1990-03-06 1993-10-05 Sumitomo Electric Industries, Ltd. Method of growing thin film
US5209812A (en) * 1990-04-09 1993-05-11 Ford Motor Company Hot filament method for growing high purity diamond
EP0493609B1 (de) * 1990-07-18 1997-09-10 Sumitomo Electric Industries, Ltd. Vorrichtung und verfahren zur herstellung von diamanten
US5082522A (en) * 1990-08-14 1992-01-21 Texas Instruments Incorporated Method for forming patterned diamond thin films
US5254862A (en) * 1991-08-14 1993-10-19 Kobe Steel U.S.A., Inc. Diamond field-effect transistor with a particular boron distribution profile
US5439492A (en) * 1992-06-11 1995-08-08 General Electric Company Fine grain diamond workpieces
US5424096A (en) * 1994-02-14 1995-06-13 General Electric Company HF-CVD method for forming diamond

Also Published As

Publication number Publication date
EP0687753A1 (de) 1995-12-20
DE69511469D1 (de) 1999-09-23
JPH07330489A (ja) 1995-12-19
EP0687753B1 (de) 1999-08-18
US5939140A (en) 1999-08-17
JP3498363B2 (ja) 2004-02-16

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