DE69512870D1 - Verfahren zur Herstellung eines oberflächenemittierenden Lasers mit vertikalem Resonator - Google Patents

Verfahren zur Herstellung eines oberflächenemittierenden Lasers mit vertikalem Resonator

Info

Publication number
DE69512870D1
DE69512870D1 DE69512870T DE69512870T DE69512870D1 DE 69512870 D1 DE69512870 D1 DE 69512870D1 DE 69512870 T DE69512870 T DE 69512870T DE 69512870 T DE69512870 T DE 69512870T DE 69512870 D1 DE69512870 D1 DE 69512870D1
Authority
DE
Germany
Prior art keywords
producing
emitting laser
surface emitting
vertical resonator
resonator
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69512870T
Other languages
English (en)
Other versions
DE69512870T2 (de
Inventor
Chan-Long Shieh
Michael S Lebby
John Lungo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Finisar Corp
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of DE69512870D1 publication Critical patent/DE69512870D1/de
Application granted granted Critical
Publication of DE69512870T2 publication Critical patent/DE69512870T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H01S5/0422—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers with n- and p-contacts on the same side of the active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2081—Methods of obtaining the confinement using special etching techniques
DE69512870T 1994-11-29 1995-11-14 Verfahren zur Herstellung eines oberflächenemittierenden Lasers mit vertikalem Resonator Expired - Lifetime DE69512870T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/346,558 US5468656A (en) 1994-11-29 1994-11-29 Method of making a VCSEL

Publications (2)

Publication Number Publication Date
DE69512870D1 true DE69512870D1 (de) 1999-11-25
DE69512870T2 DE69512870T2 (de) 2000-05-31

Family

ID=23359968

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69512870T Expired - Lifetime DE69512870T2 (de) 1994-11-29 1995-11-14 Verfahren zur Herstellung eines oberflächenemittierenden Lasers mit vertikalem Resonator

Country Status (6)

Country Link
US (1) US5468656A (de)
EP (1) EP0715378B1 (de)
JP (1) JPH08222805A (de)
KR (1) KR960019871A (de)
DE (1) DE69512870T2 (de)
TW (1) TW353821B (de)

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US5661075A (en) * 1995-02-06 1997-08-26 Motorola Method of making a VCSEL with passivation
US5831295A (en) * 1995-12-01 1998-11-03 Motorola, Inc. Current confinement via defect generator and hetero-interface interaction
US5661076A (en) * 1996-03-29 1997-08-26 Electronics And Telecommunications Research Institute Method for fabricating a vertical-cavity surface-emitting laser diode
US5903590A (en) * 1996-05-20 1999-05-11 Sandia Corporation Vertical-cavity surface-emitting laser device
KR100250453B1 (ko) * 1997-11-29 2000-04-01 정선종 브래그 거울의 식각을 실시간으로 감지하는 방법
US6291356B1 (en) 1997-12-08 2001-09-18 Applied Materials, Inc. Method for etching silicon oxynitride and dielectric antireflection coatings
US6013582A (en) * 1997-12-08 2000-01-11 Applied Materials, Inc. Method for etching silicon oxynitride and inorganic antireflection coatings
US6185240B1 (en) * 1998-01-30 2001-02-06 Motorola, Inc. Semiconductor laser having electro-static discharge protection
GB9901961D0 (en) * 1999-01-29 1999-03-17 Univ Sheffield Optical device and method of manufacture
US6577658B1 (en) 1999-09-20 2003-06-10 E20 Corporation, Inc. Method and apparatus for planar index guided vertical cavity surface emitting lasers
US6560259B1 (en) 2000-05-31 2003-05-06 Applied Optoelectronics, Inc. Spatially coherent surface-emitting, grating coupled quantum cascade laser with unstable resonance cavity
US6658040B1 (en) * 2000-07-28 2003-12-02 Agilent Technologies, Inc. High speed VCSEL
US6549556B1 (en) 2000-12-01 2003-04-15 Applied Optoelectronics, Inc. Vertical-cavity surface-emitting laser with bottom dielectric distributed bragg reflector
US6611543B2 (en) * 2000-12-23 2003-08-26 Applied Optoelectronics, Inc. Vertical-cavity surface-emitting laser with metal mirror and method of fabrication of same
US20030099273A1 (en) 2001-01-09 2003-05-29 Murry Stefan J. Method and apparatus for coupling a surface-emitting laser to an external device
JP2003023211A (ja) * 2001-07-09 2003-01-24 Seiko Epson Corp 面発光型半導体レーザおよびその製造方法
US6724798B2 (en) 2001-12-31 2004-04-20 Honeywell International Inc. Optoelectronic devices and method of production
US7716288B2 (en) * 2003-06-27 2010-05-11 Microsoft Corporation Organization-based content rights management and systems, structures, and methods therefor
JP2005123416A (ja) * 2003-10-17 2005-05-12 Ricoh Co Ltd 面発光レーザ素子およびその作製方法および面発光レーザアレイおよび光伝送システム
US20050201436A1 (en) * 2004-03-15 2005-09-15 Doug Collins Method for processing oxide-confined VCSEL semiconductor devices
US7339666B2 (en) * 2004-09-14 2008-03-04 Hewlett-Packard Development Company, L.P. Light-amplifying structures and methods for surface-enhanced Raman spectroscopy
US7177021B2 (en) * 2004-09-14 2007-02-13 Hewlett-Packard Development Company, L.P. Integrated radiation sources and amplifying structures, and methods of using the same
US7307719B2 (en) * 2004-09-14 2007-12-11 Hewlett-Packard Development Company, L.P. Wavelength-tunable excitation radiation amplifying structure and method
JP5055717B2 (ja) * 2005-06-20 2012-10-24 富士ゼロックス株式会社 面発光型半導体レーザ
JP4768452B2 (ja) * 2006-01-19 2011-09-07 シャープ株式会社 光半導体装置とその製造方法、光ディスク装置、および光伝送システム
US7511808B2 (en) * 2006-04-27 2009-03-31 Hewlett-Packard Development Company, L.P. Analyte stages including tunable resonant cavities and Raman signal-enhancing structures
JP5029079B2 (ja) * 2007-03-15 2012-09-19 富士ゼロックス株式会社 半導体素子および光学装置
US8189642B1 (en) 2007-08-08 2012-05-29 Emcore Corporation VCSEL semiconductor device
US7929588B2 (en) * 2009-01-24 2011-04-19 Avago Technologies Fiber Ip (Singapore) Pte. Ltd Semiconductor devices and methods for generating light
US8344392B2 (en) * 2011-05-12 2013-01-01 Epistar Corporation Light-emitting element and the manufacturing method thereof
JP2014007293A (ja) * 2012-06-25 2014-01-16 Hamamatsu Photonics Kk 半導体発光素子
US9077149B2 (en) 2012-12-27 2015-07-07 Empire Technology Development Llc Modulation of vertical cavity laser (VCSEL) for enhanced range of multi-modal fiber communication
US11283240B2 (en) * 2018-01-09 2022-03-22 Oepic Semiconductors, Inc. Pillar confined backside emitting VCSEL
US11233377B2 (en) * 2018-01-26 2022-01-25 Oepic Semiconductors Inc. Planarization of backside emitting VCSEL and method of manufacturing the same for array application
GB201811873D0 (en) 2018-07-20 2018-09-05 Oxford Instruments Nanotechnology Tools Ltd Semiconductor etching methods
CN109088309B (zh) * 2018-10-16 2024-01-26 厦门乾照半导体科技有限公司 一种高频垂直腔面发射激光器芯片及其制备方法
TWI791116B (zh) * 2019-06-18 2023-02-01 光環科技股份有限公司 垂直共振腔面射雷射結構
US20220311212A1 (en) * 2021-03-25 2022-09-29 Win Semiconductors Corp. Vertical-cavity surface-emitting laser and method for forming the same

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US4870468A (en) * 1986-09-12 1989-09-26 Kabushiki Kaisha Toshiba Semiconductor light-emitting device and method of manufacturing the same
GB8913070D0 (en) * 1989-06-07 1989-07-26 Bt & D Technologies Ltd Semiconductor device
US5164329A (en) * 1991-09-30 1992-11-17 Motorola, Inc. Fabricating a low leakage current LED
US5256596A (en) * 1992-03-26 1993-10-26 Motorola, Inc. Top emitting VCSEL with implant
US5293392A (en) * 1992-07-31 1994-03-08 Motorola, Inc. Top emitting VCSEL with etch stop layer
US5317587A (en) * 1992-08-06 1994-05-31 Motorola, Inc. VCSEL with separate control of current distribution and optical mode
US5343487A (en) * 1992-10-01 1994-08-30 Optical Concepts, Inc. Electrical pumping scheme for vertical-cavity surface-emitting lasers
JPH0773139B2 (ja) * 1993-01-26 1995-08-02 日本電気株式会社 面発光半導体レーザ
US5337327A (en) * 1993-02-22 1994-08-09 Motorola, Inc. VCSEL with lateral index guide
US5351257A (en) * 1993-03-08 1994-09-27 Motorola, Inc. VCSEL with vertical offset operating region providing a lateral waveguide and current limiting and method of fabrication
US5388120A (en) * 1993-09-21 1995-02-07 Motorola, Inc. VCSEL with unstable resonator

Also Published As

Publication number Publication date
JPH08222805A (ja) 1996-08-30
TW353821B (en) 1999-03-01
EP0715378A1 (de) 1996-06-05
KR960019871A (ko) 1996-06-17
EP0715378B1 (de) 1999-10-20
US5468656A (en) 1995-11-21
DE69512870T2 (de) 2000-05-31

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Free format text: SCHUMACHER & WILLSAU, PATENTANWALTSSOZIETAET, 80335 MUENCHEN

8327 Change in the person/name/address of the patent owner

Owner name: FINISAR CORP.(N.D.GES.D.STAATES DELAWARE), SUNNYVA