DE69513352D1 - Tunneleffektsensor aus Einzelhalbleiterscheibe und kostengünstige IC-Herstellungsmethode - Google Patents
Tunneleffektsensor aus Einzelhalbleiterscheibe und kostengünstige IC-HerstellungsmethodeInfo
- Publication number
- DE69513352D1 DE69513352D1 DE69513352T DE69513352T DE69513352D1 DE 69513352 D1 DE69513352 D1 DE 69513352D1 DE 69513352 T DE69513352 T DE 69513352T DE 69513352 T DE69513352 T DE 69513352T DE 69513352 D1 DE69513352 D1 DE 69513352D1
- Authority
- DE
- Germany
- Prior art keywords
- effective
- manufacturing
- cost
- semiconductor wafer
- effect sensor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/13—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by measuring the force required to restore a proofmass subjected to inertial forces to a null position
- G01P15/131—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by measuring the force required to restore a proofmass subjected to inertial forces to a null position with electrostatic counterbalancing means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0802—Details
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P15/0894—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by non-contact electron transfer, i.e. electron tunneling
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
- G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
- G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
- G01P2015/0805—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration
- G01P2015/0822—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass
- G01P2015/0825—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass
- G01P2015/0828—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values being provided with a particular type of spring-mass-system for defining the displacement of a seismic mass due to an external acceleration for defining out-of-plane movement of the mass for one single degree of freedom of movement of the mass the mass being of the paddle type being suspended at one of its longitudinal ends
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
- Micromachines (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/292,897 US5596194A (en) | 1994-08-19 | 1994-08-19 | Single-wafer tunneling sensor and low-cost IC manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69513352D1 true DE69513352D1 (de) | 1999-12-23 |
DE69513352T2 DE69513352T2 (de) | 2000-08-10 |
Family
ID=23126706
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69513352T Expired - Lifetime DE69513352T2 (de) | 1994-08-19 | 1995-08-05 | Tunneleffektsensor aus Einzelhalbleiterscheibe und kostengünstige IC-Herstellungsmethode |
Country Status (4)
Country | Link |
---|---|
US (2) | US5596194A (de) |
EP (1) | EP0701135B1 (de) |
JP (1) | JPH08181333A (de) |
DE (1) | DE69513352T2 (de) |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20030199179A1 (en) * | 1993-11-16 | 2003-10-23 | Formfactor, Inc. | Contact tip structure for microelectronic interconnection elements and method of making same |
US20020053734A1 (en) * | 1993-11-16 | 2002-05-09 | Formfactor, Inc. | Probe card assembly and kit, and methods of making same |
US7073254B2 (en) * | 1993-11-16 | 2006-07-11 | Formfactor, Inc. | Method for mounting a plurality of spring contact elements |
EP0740793B1 (de) * | 1994-01-18 | 1999-03-24 | Siemens Aktiengesellschaft | Tunneleffekt-sensor |
US20100065963A1 (en) | 1995-05-26 | 2010-03-18 | Formfactor, Inc. | Method of wirebonding that utilizes a gas flow within a capillary from which a wire is played out |
US5756895A (en) * | 1995-09-01 | 1998-05-26 | Hughes Aircraft Company | Tunneling-based rate gyros with simple drive and sense axis coupling |
GB9524241D0 (en) * | 1995-11-28 | 1996-01-31 | Smiths Industries Plc | Rate sensors |
US8033838B2 (en) * | 1996-02-21 | 2011-10-11 | Formfactor, Inc. | Microelectronic contact structure |
US5942791A (en) * | 1996-03-06 | 1999-08-24 | Gec-Marconi Limited | Micromachined devices having microbridge structure |
GB9604786D0 (en) * | 1996-03-06 | 1996-09-25 | Marconi Gec Ltd | Micromachined devices |
US5859368A (en) * | 1996-04-15 | 1999-01-12 | Cargille; Donald R. | Tunneling-based rotation rate sensor |
US5752410A (en) * | 1996-08-08 | 1998-05-19 | The Charles Stark Draper Laboratory, Inc. | Tunneling sensor with linear force rebalance and method for fabricating the same |
JPH10115635A (ja) * | 1996-10-14 | 1998-05-06 | Akebono Brake Ind Co Ltd | 半導体加速度センサー |
US5982009A (en) * | 1997-03-01 | 1999-11-09 | Korea Advanced Institute Of Science & Technology | Integrated device of cantilever and light source |
US5952573A (en) * | 1997-05-05 | 1999-09-14 | Hughes Electronics Corporation | Micro-beam motion sensor |
US6037719A (en) * | 1998-04-09 | 2000-03-14 | Hughes Electronics Corporation | Matrix-addressed display having micromachined electromechanical switches |
US6391527B2 (en) * | 1998-04-16 | 2002-05-21 | Canon Kabushiki Kaisha | Method of producing micro structure, method of production liquid discharge head |
US6238539B1 (en) | 1999-06-25 | 2001-05-29 | Hughes Electronics Corporation | Method of in-situ displacement/stress control in electroplating |
US6534839B1 (en) * | 1999-12-23 | 2003-03-18 | Texas Instruments Incorporated | Nanomechanical switches and circuits |
US7262611B2 (en) | 2000-03-17 | 2007-08-28 | Formfactor, Inc. | Apparatuses and methods for planarizing a semiconductor contactor |
US6674141B1 (en) * | 2000-08-01 | 2004-01-06 | Hrl Laboratories, Llc | Single crystal, tunneling and capacitive, three-axes sensor using eutectic bonding and a method of making same |
US6580138B1 (en) * | 2000-08-01 | 2003-06-17 | Hrl Laboratories, Llc | Single crystal, dual wafer, tunneling sensor or switch with silicon on insulator substrate and a method of making same |
US6630367B1 (en) | 2000-08-01 | 2003-10-07 | Hrl Laboratories, Llc | Single crystal dual wafer, tunneling sensor and a method of making same |
US6563184B1 (en) | 2000-08-01 | 2003-05-13 | Hrl Laboratories, Llc | Single crystal tunneling sensor or switch with silicon beam structure and a method of making same |
US6555404B1 (en) | 2000-08-01 | 2003-04-29 | Hrl Laboratories, Llc | Method of manufacturing a dual wafer tunneling gyroscope |
US6495905B2 (en) | 2000-11-09 | 2002-12-17 | Texas Instruments Incorporated | Nanomechanical switches and circuits |
WO2002073673A1 (en) * | 2001-03-13 | 2002-09-19 | Rochester Institute Of Technology | A micro-electro-mechanical switch and a method of using and making thereof |
US7195393B2 (en) * | 2001-05-31 | 2007-03-27 | Rochester Institute Of Technology | Micro fluidic valves, agitators, and pumps and methods thereof |
DE10197405B4 (de) * | 2001-06-21 | 2016-09-01 | Mitsubishi Denki K.K. | Herstellungsverfahren für einen Halbleiter-Beschleunigungssensor |
US6905905B2 (en) * | 2001-06-21 | 2005-06-14 | Mitsubishi Denki Kabushiki Kaisha | Method of manufacturing thin-film structure |
US6729019B2 (en) | 2001-07-11 | 2004-05-04 | Formfactor, Inc. | Method of manufacturing a probe card |
US7378775B2 (en) * | 2001-10-26 | 2008-05-27 | Nth Tech Corporation | Motion based, electrostatic power source and methods thereof |
US7211923B2 (en) * | 2001-10-26 | 2007-05-01 | Nth Tech Corporation | Rotational motion based, electrostatic power source and methods thereof |
WO2004079292A2 (en) * | 2003-02-28 | 2004-09-16 | Southwest Research Institute | Mems sensor for detecting stress corrosion cracking |
US7287328B2 (en) * | 2003-08-29 | 2007-10-30 | Rochester Institute Of Technology | Methods for distributed electrode injection |
US7217582B2 (en) * | 2003-08-29 | 2007-05-15 | Rochester Institute Of Technology | Method for non-damaging charge injection and a system thereof |
US8581308B2 (en) * | 2004-02-19 | 2013-11-12 | Rochester Institute Of Technology | High temperature embedded charge devices and methods thereof |
US20070074731A1 (en) * | 2005-10-05 | 2007-04-05 | Nth Tech Corporation | Bio-implantable energy harvester systems and methods thereof |
DE102009058320B4 (de) * | 2009-12-15 | 2017-04-06 | Airbus Defence and Space GmbH | Drucksensor und Druckmessverfahren |
DE102010029278B4 (de) * | 2010-05-25 | 2019-05-23 | Deutsches Zentrum für Luft- und Raumfahrt e.V. | Sensor und Aktuator für mehrere Rotationsfreiheitsgrade |
US8991250B2 (en) * | 2012-09-11 | 2015-03-31 | The United States Of America As Represented By Secretary Of The Navy | Tuning fork gyroscope time domain inertial sensor |
US8943611B2 (en) | 2013-07-23 | 2015-01-27 | National Institute Of Standards And Technology | Probe module, method for making and use of same |
US9070586B1 (en) * | 2014-02-22 | 2015-06-30 | International Business Machines Corporation | Method of forming surface protrusions on an article and the article with the protrusions attached |
RU2685511C2 (ru) * | 2014-08-19 | 2019-04-19 | Атлас Джеймс РАССЕЛ | Система, способ и устройство для переработки битумной черепицы и производства асфальтобетонной смеси |
US10580605B2 (en) | 2015-11-23 | 2020-03-03 | University Of Utah Research Foundation | Very low power microelectromechanical devices for the internet of everything |
GB2560856A (en) * | 2016-04-08 | 2018-09-26 | Trek Inc | Electrostatic force detector with improved shielding and method of using an electrostatic force detector |
IT201900013323A1 (it) * | 2019-07-30 | 2021-01-30 | Sleng S R L | Interruttore remoto a funzionamento sonoro, in particolare per applicazioni su dispositivi vettori polifunzionali biocompatibili all’interno di fluidi e/o ambienti organici. |
Family Cites Families (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4275286A (en) * | 1978-12-04 | 1981-06-23 | Hughes Aircraft Company | Process and mask for ion beam etching of fine patterns |
JPS59171141A (ja) * | 1983-03-17 | 1984-09-27 | Nec Corp | 半導体装置の製造方法 |
US4724318A (en) * | 1985-11-26 | 1988-02-09 | International Business Machines Corporation | Atomic force microscope and method for imaging surfaces with atomic resolution |
EP0262253A1 (de) * | 1986-10-03 | 1988-04-06 | International Business Machines Corporation | Mikromechanische Fühlervorrichtung für atomare Kräfte |
US5315247A (en) * | 1987-11-09 | 1994-05-24 | California Institute Of Technology | Method and apparatus for measuring a magnetic field using a deflectable energized loop and a tunneling tip |
US5293781A (en) * | 1987-11-09 | 1994-03-15 | California Institute Of Technology | Tunnel effect measuring systems and particle detectors |
US5265470A (en) * | 1987-11-09 | 1993-11-30 | California Institute Of Technology | Tunnel effect measuring systems and particle detectors |
JPH03101127A (ja) * | 1989-09-13 | 1991-04-25 | Fujitsu Ltd | 半導体装置の製造方法 |
US5085070A (en) * | 1990-02-07 | 1992-02-04 | At&T Bell Laboratories | Capacitive force-balance system for measuring small forces and pressures |
DE4032559C2 (de) * | 1990-10-13 | 2000-11-23 | Bosch Gmbh Robert | Drehratensensor und Verfahren zur Herstellung |
US5209117A (en) * | 1990-10-22 | 1993-05-11 | Motorola, Inc. | Tapered cantilever beam for sensors |
US5241862A (en) * | 1990-12-24 | 1993-09-07 | Litton Systems, Inc. | Integrated accelerometer with single hardstop geometry |
US5140164A (en) * | 1991-01-14 | 1992-08-18 | Schlumberger Technologies, Inc. | Ic modification with focused ion beam system |
JP3069923B2 (ja) * | 1991-06-17 | 2000-07-24 | キヤノン株式会社 | カンチレバー型プローブ及び原子間力顕微鏡、情報記録再生装置 |
WO1993000589A1 (en) * | 1991-06-25 | 1993-01-07 | Sundstrand Corporation | Coriolis rate sensor using tunnel-effect displacement sensor |
US5377545A (en) * | 1992-12-08 | 1995-01-03 | Alliedsignal Inc. | Servo accelerometer with tunnel current sensor and complementary electrostatic drive |
DE59402800D1 (de) * | 1993-04-05 | 1997-06-26 | Siemens Ag | Verfahren zur Herstellung von Tunneleffekt-Sensoren |
EP0619494B1 (de) * | 1993-04-05 | 1997-05-21 | Siemens Aktiengesellschaft | Tunneleffekt-Beschleunigungssensor |
-
1994
- 1994-08-19 US US08/292,897 patent/US5596194A/en not_active Expired - Lifetime
-
1995
- 1995-05-31 US US08/456,211 patent/US5665253A/en not_active Expired - Lifetime
- 1995-08-05 EP EP95112360A patent/EP0701135B1/de not_active Expired - Lifetime
- 1995-08-05 DE DE69513352T patent/DE69513352T2/de not_active Expired - Lifetime
- 1995-08-21 JP JP7211745A patent/JPH08181333A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP0701135B1 (de) | 1999-11-17 |
DE69513352T2 (de) | 2000-08-10 |
JPH08181333A (ja) | 1996-07-12 |
US5665253A (en) | 1997-09-09 |
US5596194A (en) | 1997-01-21 |
EP0701135A1 (de) | 1996-03-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8328 | Change in the person/name/address of the agent |
Representative=s name: WITTE, WELLER & PARTNER, 70178 STUTTGART |