DE69515593T2 - Verfahren und Vorrichtung zur Oberflächenbehandlung - Google Patents

Verfahren und Vorrichtung zur Oberflächenbehandlung

Info

Publication number
DE69515593T2
DE69515593T2 DE69515593T DE69515593T DE69515593T2 DE 69515593 T2 DE69515593 T2 DE 69515593T2 DE 69515593 T DE69515593 T DE 69515593T DE 69515593 T DE69515593 T DE 69515593T DE 69515593 T2 DE69515593 T2 DE 69515593T2
Authority
DE
Germany
Prior art keywords
surface treatment
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69515593T
Other languages
English (en)
Other versions
DE69515593D1 (de
Inventor
Naoyuki Kofuji
Shin Arai
Kazunori Tsujimoto
Tatsumi Mizutani
Keizo Suzuki
Kenichi Mizuishi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of DE69515593D1 publication Critical patent/DE69515593D1/de
Application granted granted Critical
Publication of DE69515593T2 publication Critical patent/DE69515593T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32697Electrostatic control
    • H01J37/32706Polarising the substrate
DE69515593T 1994-11-04 1995-10-24 Verfahren und Vorrichtung zur Oberflächenbehandlung Expired - Fee Related DE69515593T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29368894A JP3799073B2 (ja) 1994-11-04 1994-11-04 ドライエッチング方法

Publications (2)

Publication Number Publication Date
DE69515593D1 DE69515593D1 (de) 2000-04-20
DE69515593T2 true DE69515593T2 (de) 2000-11-23

Family

ID=17797951

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69515593T Expired - Fee Related DE69515593T2 (de) 1994-11-04 1995-10-24 Verfahren und Vorrichtung zur Oberflächenbehandlung

Country Status (9)

Country Link
US (2) US6231777B1 (de)
EP (1) EP0710977B1 (de)
JP (1) JP3799073B2 (de)
KR (1) KR100389642B1 (de)
CN (1) CN1069439C (de)
DE (1) DE69515593T2 (de)
MY (1) MY115990A (de)
SG (1) SG32522A1 (de)
TW (1) TW280085B (de)

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JP5864879B2 (ja) 2011-03-31 2016-02-17 東京エレクトロン株式会社 基板処理装置及びその制御方法
KR101328800B1 (ko) * 2011-09-08 2013-11-13 성균관대학교산학협력단 다중 주파수의 rf 펄스 파워를 이용한 펄스 플라즈마의 특성 제어 방법
CN105269413B (zh) * 2015-09-25 2018-01-16 安庆市凯立金刚石科技有限公司 一种金刚石膜抛光方法
JP6114370B2 (ja) * 2015-12-24 2017-04-12 東京エレクトロン株式会社 基板処理装置及びその制御方法
JP6945388B2 (ja) 2017-08-23 2021-10-06 東京エレクトロン株式会社 エッチング方法及びエッチング処理装置
KR102550393B1 (ko) * 2017-10-25 2023-06-30 삼성전자주식회사 플라즈마 처리 장치 및 이를 이용한 반도체 장치의 제조 방법
JP7218226B2 (ja) * 2019-03-22 2023-02-06 株式会社アルバック プラズマエッチング方法
CN113035677B (zh) * 2019-12-09 2023-01-24 中微半导体设备(上海)股份有限公司 等离子体处理设备以及等离子体处理方法

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Also Published As

Publication number Publication date
DE69515593D1 (de) 2000-04-20
CN1069439C (zh) 2001-08-08
JPH08139077A (ja) 1996-05-31
KR100389642B1 (ko) 2003-10-08
US6332425B1 (en) 2001-12-25
EP0710977A1 (de) 1996-05-08
US6231777B1 (en) 2001-05-15
KR960019567A (ko) 1996-06-17
SG32522A1 (en) 1996-08-13
EP0710977B1 (de) 2000-03-15
MY115990A (en) 2003-10-31
JP3799073B2 (ja) 2006-07-19
TW280085B (de) 1996-07-01
CN1132407A (zh) 1996-10-02

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee