DE69515593T2 - Verfahren und Vorrichtung zur Oberflächenbehandlung - Google Patents
Verfahren und Vorrichtung zur OberflächenbehandlungInfo
- Publication number
- DE69515593T2 DE69515593T2 DE69515593T DE69515593T DE69515593T2 DE 69515593 T2 DE69515593 T2 DE 69515593T2 DE 69515593 T DE69515593 T DE 69515593T DE 69515593 T DE69515593 T DE 69515593T DE 69515593 T2 DE69515593 T2 DE 69515593T2
- Authority
- DE
- Germany
- Prior art keywords
- surface treatment
- treatment
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32697—Electrostatic control
- H01J37/32706—Polarising the substrate
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP29368894A JP3799073B2 (ja) | 1994-11-04 | 1994-11-04 | ドライエッチング方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69515593D1 DE69515593D1 (de) | 2000-04-20 |
DE69515593T2 true DE69515593T2 (de) | 2000-11-23 |
Family
ID=17797951
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69515593T Expired - Fee Related DE69515593T2 (de) | 1994-11-04 | 1995-10-24 | Verfahren und Vorrichtung zur Oberflächenbehandlung |
Country Status (9)
Country | Link |
---|---|
US (2) | US6231777B1 (de) |
EP (1) | EP0710977B1 (de) |
JP (1) | JP3799073B2 (de) |
KR (1) | KR100389642B1 (de) |
CN (1) | CN1069439C (de) |
DE (1) | DE69515593T2 (de) |
MY (1) | MY115990A (de) |
SG (1) | SG32522A1 (de) |
TW (1) | TW280085B (de) |
Families Citing this family (47)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6253704B1 (en) * | 1995-10-13 | 2001-07-03 | Mattson Technology, Inc. | Apparatus and method for pulsed plasma processing of a semiconductor substrate |
US6794301B2 (en) | 1995-10-13 | 2004-09-21 | Mattson Technology, Inc. | Pulsed plasma processing of semiconductor substrates |
US6902683B1 (en) * | 1996-03-01 | 2005-06-07 | Hitachi, Ltd. | Plasma processing apparatus and plasma processing method |
US6258287B1 (en) * | 1996-08-28 | 2001-07-10 | Georgia Tech Research Corporation | Method and apparatus for low energy electron enhanced etching of substrates in an AC or DC plasma environment |
JPH10150025A (ja) | 1996-11-20 | 1998-06-02 | Mitsubishi Electric Corp | プラズマ反応装置 |
JPH10335314A (ja) * | 1997-06-05 | 1998-12-18 | Mitsubishi Electric Corp | プラズマ処理装置及び基板処理方法 |
US6287943B1 (en) * | 1998-07-31 | 2001-09-11 | Canon Kabushiki Kaisha | Deposition of semiconductor layer by plasma process |
KR100521121B1 (ko) * | 1998-09-10 | 2005-10-12 | 가부시끼가이샤 히다치 세이사꾸쇼 | 시료표면의 처리방법 및 시료표면의 처리장치 |
ATE458273T1 (de) * | 1998-11-04 | 2010-03-15 | Surface Technology Systems Plc | Verfahren zur ätzung eines substrats |
JP4334723B2 (ja) * | 2000-03-21 | 2009-09-30 | 新明和工業株式会社 | イオンプレーティング成膜装置、及びイオンプレーティング成膜方法。 |
US20030094239A1 (en) * | 2000-06-02 | 2003-05-22 | Quon Bill H. | Apparatus and method for improving electron ecceleration |
KR100345666B1 (ko) * | 2000-07-31 | 2002-07-24 | 주식회사 하이닉스반도체 | 플라즈마의 전자온도 감소를 이용한 강유전체 소자의 열화감소 방법 |
US6544895B1 (en) * | 2000-08-17 | 2003-04-08 | Micron Technology, Inc. | Methods for use of pulsed voltage in a plasma reactor |
US6485572B1 (en) * | 2000-08-28 | 2002-11-26 | Micron Technology, Inc. | Use of pulsed grounding source in a plasma reactor |
TW543071B (en) * | 2000-11-20 | 2003-07-21 | Varian Semiconductor Equipment | Extraction and deceleration of low energy beam with low beam divergence |
KR100733405B1 (ko) * | 2000-12-28 | 2007-06-29 | 주식회사 하이닉스반도체 | 디씨 바이어스 조절을 이용한 반도체소자의 식각방법 |
US6638833B1 (en) | 2001-03-09 | 2003-10-28 | Stmicroelectronics S.R.L. | Process for the fabrication of integrated devices with reduction of damage from plasma |
US20030003748A1 (en) * | 2001-05-24 | 2003-01-02 | Anisul Khan | Method of eliminating notching when anisotropically etching small linewidth openings in silicon on insulator |
DE10309711A1 (de) * | 2001-09-14 | 2004-09-16 | Robert Bosch Gmbh | Verfahren zum Einätzen von Strukturen in einem Ätzkörper mit einem Plasma |
US6846747B2 (en) * | 2002-04-09 | 2005-01-25 | Unaxis Usa Inc. | Method for etching vias |
US6905626B2 (en) * | 2002-07-24 | 2005-06-14 | Unaxis Usa Inc. | Notch-free etching of high aspect SOI structures using alternating deposition and etching and pulsed plasma |
US7109122B2 (en) | 2002-11-29 | 2006-09-19 | Tokyo Electron Limited | Method and apparatus for reducing substrate charging damage |
US7521000B2 (en) | 2003-08-28 | 2009-04-21 | Applied Materials, Inc. | Process for etching photomasks |
DE102004043233B4 (de) * | 2003-09-10 | 2014-02-13 | Denso Corporation | Verfahren zum Herstellen eines beweglichen Abschnitts einer Halbleitervorrichtung |
GB2417251A (en) * | 2004-08-18 | 2006-02-22 | Nanofilm Technologies Int | Removing material from a substrate surface using plasma |
KR100668956B1 (ko) * | 2004-12-22 | 2007-01-12 | 동부일렉트로닉스 주식회사 | 반도체 제조 방법 |
US7879510B2 (en) | 2005-01-08 | 2011-02-01 | Applied Materials, Inc. | Method for quartz photomask plasma etching |
US7790334B2 (en) | 2005-01-27 | 2010-09-07 | Applied Materials, Inc. | Method for photomask plasma etching using a protected mask |
US8293430B2 (en) | 2005-01-27 | 2012-10-23 | Applied Materials, Inc. | Method for etching a molybdenum layer suitable for photomask fabrication |
US7829243B2 (en) | 2005-01-27 | 2010-11-09 | Applied Materials, Inc. | Method for plasma etching a chromium layer suitable for photomask fabrication |
JP4593402B2 (ja) * | 2005-08-25 | 2010-12-08 | 株式会社日立ハイテクノロジーズ | エッチング方法およびエッチング装置 |
JP4559973B2 (ja) * | 2006-01-13 | 2010-10-13 | 富士通セミコンダクター株式会社 | 半導体装置の製造方法 |
US7786019B2 (en) | 2006-12-18 | 2010-08-31 | Applied Materials, Inc. | Multi-step photomask etching with chlorine for uniformity control |
US7718538B2 (en) * | 2007-02-21 | 2010-05-18 | Applied Materials, Inc. | Pulsed-plasma system with pulsed sample bias for etching semiconductor substrates |
US7737042B2 (en) * | 2007-02-22 | 2010-06-15 | Applied Materials, Inc. | Pulsed-plasma system for etching semiconductor structures |
US7771606B2 (en) * | 2007-02-22 | 2010-08-10 | Applied Materials, Inc. | Pulsed-plasma system with pulsed reaction gas replenish for etching semiconductors structures |
KR20160031034A (ko) * | 2007-10-26 | 2016-03-21 | 에바텍 어드벤스드 테크놀로지스 아크티엔게젤샤프트 | 관통 실리콘 비아 금속화에 대한 고전력 마그네트론 스퍼터링의 적용 |
US9059116B2 (en) | 2007-11-29 | 2015-06-16 | Lam Research Corporation | Etch with pulsed bias |
WO2009073361A1 (en) * | 2007-11-29 | 2009-06-11 | Lam Research Corporation | Pulsed bias plasma process to control microloading |
JP5864879B2 (ja) | 2011-03-31 | 2016-02-17 | 東京エレクトロン株式会社 | 基板処理装置及びその制御方法 |
KR101328800B1 (ko) * | 2011-09-08 | 2013-11-13 | 성균관대학교산학협력단 | 다중 주파수의 rf 펄스 파워를 이용한 펄스 플라즈마의 특성 제어 방법 |
CN105269413B (zh) * | 2015-09-25 | 2018-01-16 | 安庆市凯立金刚石科技有限公司 | 一种金刚石膜抛光方法 |
JP6114370B2 (ja) * | 2015-12-24 | 2017-04-12 | 東京エレクトロン株式会社 | 基板処理装置及びその制御方法 |
JP6945388B2 (ja) | 2017-08-23 | 2021-10-06 | 東京エレクトロン株式会社 | エッチング方法及びエッチング処理装置 |
KR102550393B1 (ko) * | 2017-10-25 | 2023-06-30 | 삼성전자주식회사 | 플라즈마 처리 장치 및 이를 이용한 반도체 장치의 제조 방법 |
JP7218226B2 (ja) * | 2019-03-22 | 2023-02-06 | 株式会社アルバック | プラズマエッチング方法 |
CN113035677B (zh) * | 2019-12-09 | 2023-01-24 | 中微半导体设备(上海)股份有限公司 | 等离子体处理设备以及等离子体处理方法 |
Family Cites Families (34)
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US3616405A (en) * | 1969-10-03 | 1971-10-26 | Int Plasma Corp | Continuous sputtering system |
JPS55150604A (en) * | 1979-05-14 | 1980-11-22 | Trio Kenwood Corp | Power amplifier |
JPS5613480A (en) | 1979-07-13 | 1981-02-09 | Hitachi Ltd | Dry etching apparatus |
US4464223A (en) | 1983-10-03 | 1984-08-07 | Tegal Corp. | Plasma reactor apparatus and method |
JPS60126832A (ja) * | 1983-12-14 | 1985-07-06 | Hitachi Ltd | ドライエツチング方法および装置 |
KR900007687B1 (ko) * | 1986-10-17 | 1990-10-18 | 가부시기가이샤 히다찌세이사꾸쇼 | 플라즈마처리방법 및 장치 |
JPS63243265A (ja) * | 1987-03-31 | 1988-10-11 | Hitachi Cable Ltd | 高周波型イオンプレ−テイング装置 |
US5103367A (en) | 1987-05-06 | 1992-04-07 | Unisearch Limited | Electrostatic chuck using A.C. field excitation |
JPH0786441B2 (ja) * | 1988-05-26 | 1995-09-20 | 横河電機株式会社 | 振動形トランスデューサの製造方法 |
US5223337A (en) * | 1988-12-10 | 1993-06-29 | Fried. Krupp Gmbh | Tool produced by a plasma-activated CVD process |
DE69017744T2 (de) | 1989-04-27 | 1995-09-14 | Fujitsu Ltd | Gerät und Verfahren zur Bearbeitung einer Halbleitervorrichtung unter Verwendung eines durch Mikrowellen erzeugten Plasmas. |
US4992719A (en) * | 1989-07-24 | 1991-02-12 | Hughes Aircraft Company | Stable high voltage pulse power supply |
US6068784A (en) * | 1989-10-03 | 2000-05-30 | Applied Materials, Inc. | Process used in an RF coupled plasma reactor |
JP2775345B2 (ja) * | 1989-12-15 | 1998-07-16 | キヤノン株式会社 | プラズマ処理法及びプラズマ処理装置 |
JP3080385B2 (ja) * | 1990-03-12 | 2000-08-28 | 株式会社日立製作所 | マイクロ波発生装置及びプラズマ処理装置 |
JPH04180569A (ja) * | 1990-11-13 | 1992-06-26 | Ishikawajima Harima Heavy Ind Co Ltd | プラズマcvd装置の制御方法 |
JPH04304377A (ja) * | 1991-04-01 | 1992-10-27 | Ishikawajima Harima Heavy Ind Co Ltd | ダイアモンド薄膜生成方法および装置 |
US5888414A (en) * | 1991-06-27 | 1999-03-30 | Applied Materials, Inc. | Plasma reactor and processes using RF inductive coupling and scavenger temperature control |
WO1993006622A1 (en) * | 1991-09-27 | 1993-04-01 | Harris Corporation | Complementary bipolar transistors having high early voltage, high frequency performance and high breakdown voltage characteristics and method of making same |
WO1993018201A1 (en) * | 1992-03-02 | 1993-09-16 | Varian Associates, Inc. | Plasma implantation process and equipment |
JPH0772342B2 (ja) * | 1992-06-18 | 1995-08-02 | 栄電子工業株式会社 | イオンプレーティング加工方法 |
JP2941572B2 (ja) | 1992-08-11 | 1999-08-25 | 三菱電機株式会社 | プラズマエッチング装置及び半導体装置の製造方法 |
US5423936A (en) * | 1992-10-19 | 1995-06-13 | Hitachi, Ltd. | Plasma etching system |
JP3351843B2 (ja) * | 1993-02-24 | 2002-12-03 | 忠弘 大見 | 成膜方法 |
US5384682A (en) * | 1993-03-22 | 1995-01-24 | Toto Ltd. | Electrostatic chuck |
US5648293A (en) * | 1993-07-22 | 1997-07-15 | Nec Corporation | Method of growing an amorphous silicon film |
SG46607A1 (en) * | 1993-07-28 | 1998-02-20 | Asahi Glass Co Ltd | Method of an apparatus for sputtering |
US5892264A (en) * | 1993-10-04 | 1999-04-06 | Harris Corporation | High frequency analog transistors, method of fabrication and circuit implementation |
US5467249A (en) * | 1993-12-20 | 1995-11-14 | International Business Machines Corporation | Electrostatic chuck with reference electrode |
JP3278732B2 (ja) * | 1993-12-27 | 2002-04-30 | 株式会社アルバック | エッチング装置及びエッチング方法 |
US5550089A (en) * | 1994-03-23 | 1996-08-27 | Lucent Technologies Inc. | Gallium oxide coatings for optoelectronic devices using electron beam evaporation of a high purity single crystal Gd3 Ga5 O12 source. |
US5661043A (en) * | 1994-07-25 | 1997-08-26 | Rissman; Paul | Forming a buried insulator layer using plasma source ion implantation |
US5841623A (en) * | 1995-12-22 | 1998-11-24 | Lam Research Corporation | Chuck for substrate processing and method for depositing a film in a radio frequency biased plasma chemical depositing system |
US5812362A (en) * | 1996-06-14 | 1998-09-22 | Applied Materials, Inc. | Method and apparatus for the use of diamond films as dielectric coatings on electrostatic chucks |
-
1994
- 1994-11-04 JP JP29368894A patent/JP3799073B2/ja not_active Expired - Fee Related
-
1995
- 1995-09-15 TW TW084109679A patent/TW280085B/zh active
- 1995-09-29 KR KR1019950033058A patent/KR100389642B1/ko not_active IP Right Cessation
- 1995-10-24 DE DE69515593T patent/DE69515593T2/de not_active Expired - Fee Related
- 1995-10-24 EP EP95116742A patent/EP0710977B1/de not_active Expired - Lifetime
- 1995-10-25 SG SG1995001634A patent/SG32522A1/en unknown
- 1995-10-26 MY MYPI9503216 patent/MY115990A/en unknown
- 1995-10-26 US US08/548,613 patent/US6231777B1/en not_active Expired - Fee Related
- 1995-11-03 CN CN95118750A patent/CN1069439C/zh not_active Expired - Fee Related
-
2000
- 2000-03-14 US US09/525,124 patent/US6332425B1/en not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
DE69515593D1 (de) | 2000-04-20 |
CN1069439C (zh) | 2001-08-08 |
JPH08139077A (ja) | 1996-05-31 |
KR100389642B1 (ko) | 2003-10-08 |
US6332425B1 (en) | 2001-12-25 |
EP0710977A1 (de) | 1996-05-08 |
US6231777B1 (en) | 2001-05-15 |
KR960019567A (ko) | 1996-06-17 |
SG32522A1 (en) | 1996-08-13 |
EP0710977B1 (de) | 2000-03-15 |
MY115990A (en) | 2003-10-31 |
JP3799073B2 (ja) | 2006-07-19 |
TW280085B (de) | 1996-07-01 |
CN1132407A (zh) | 1996-10-02 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |