DE69517060D1 - Spannungsreduzierung für nichtflüchtige Speicherzelle - Google Patents

Spannungsreduzierung für nichtflüchtige Speicherzelle

Info

Publication number
DE69517060D1
DE69517060D1 DE69517060T DE69517060T DE69517060D1 DE 69517060 D1 DE69517060 D1 DE 69517060D1 DE 69517060 T DE69517060 T DE 69517060T DE 69517060 T DE69517060 T DE 69517060T DE 69517060 D1 DE69517060 D1 DE 69517060D1
Authority
DE
Germany
Prior art keywords
volatile memory
memory cells
voltage reduction
reduction
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69517060T
Other languages
English (en)
Other versions
DE69517060T2 (de
Inventor
George Smarandoiu
Steven J Schumann
Tsung-Ching Wu
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Atmel Corp
Original Assignee
Atmel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atmel Corp filed Critical Atmel Corp
Publication of DE69517060D1 publication Critical patent/DE69517060D1/de
Application granted granted Critical
Publication of DE69517060T2 publication Critical patent/DE69517060T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
DE69517060T 1994-01-19 1995-01-18 Spannungsreduzierung für nichtflüchtige Speicherzelle Expired - Fee Related DE69517060T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/184,227 US5434815A (en) 1994-01-19 1994-01-19 Stress reduction for non-volatile memory cell

Publications (2)

Publication Number Publication Date
DE69517060D1 true DE69517060D1 (de) 2000-06-29
DE69517060T2 DE69517060T2 (de) 2001-02-15

Family

ID=22676058

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69517060T Expired - Fee Related DE69517060T2 (de) 1994-01-19 1995-01-18 Spannungsreduzierung für nichtflüchtige Speicherzelle

Country Status (7)

Country Link
US (1) US5434815A (de)
EP (1) EP0664544B1 (de)
JP (2) JPH07254295A (de)
KR (1) KR100285219B1 (de)
CN (1) CN1039172C (de)
DE (1) DE69517060T2 (de)
TW (1) TW281763B (de)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5617350A (en) * 1995-08-01 1997-04-01 Roohparvar; Frankie F. Flash memory system having reduced disturb and method
US5657268A (en) * 1995-11-20 1997-08-12 Texas Instruments Incorporated Array-source line, bitline and wordline sequence in flash operations
US5959891A (en) * 1996-08-16 1999-09-28 Altera Corporation Evaluation of memory cell characteristics
US5740104A (en) * 1997-01-29 1998-04-14 Micron Technology, Inc. Multi-state flash memory cell and method for programming single electron differences
US5852306A (en) 1997-01-29 1998-12-22 Micron Technology, Inc. Flash memory with nanocrystalline silicon film floating gate
US5801401A (en) * 1997-01-29 1998-09-01 Micron Technology, Inc. Flash memory with microcrystalline silicon carbide film floating gate
US5754477A (en) * 1997-01-29 1998-05-19 Micron Technology, Inc. Differential flash memory cell and method for programming
US6232643B1 (en) 1997-11-13 2001-05-15 Micron Technology, Inc. Memory using insulator traps
US6493270B2 (en) 1999-07-01 2002-12-10 Micron Technology, Inc. Leakage detection in programming algorithm for a flash memory device
US6108241A (en) * 1999-07-01 2000-08-22 Micron Technology, Inc. Leakage detection in flash memory cell
US6888739B2 (en) 2002-06-21 2005-05-03 Micron Technology Inc. Nanocrystal write once read only memory for archival storage
US6996009B2 (en) 2002-06-21 2006-02-07 Micron Technology, Inc. NOR flash memory cell with high storage density
US7193893B2 (en) 2002-06-21 2007-03-20 Micron Technology, Inc. Write once read only memory employing floating gates
US6804136B2 (en) * 2002-06-21 2004-10-12 Micron Technology, Inc. Write once read only memory employing charge trapping in insulators
US7154140B2 (en) 2002-06-21 2006-12-26 Micron Technology, Inc. Write once read only memory with large work function floating gates
US7221017B2 (en) * 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide-conductor nanolaminates
US7847344B2 (en) * 2002-07-08 2010-12-07 Micron Technology, Inc. Memory utilizing oxide-nitride nanolaminates
US7221586B2 (en) 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
JP4314056B2 (ja) * 2003-04-17 2009-08-12 パナソニック株式会社 半導体記憶装置
US7054216B2 (en) * 2004-03-17 2006-05-30 Taiwan Semiconductor Manufacturing Co., Ltd. Programmable MOS device formed by hot carrier effect
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
JP2007193928A (ja) * 2005-12-19 2007-08-02 Matsushita Electric Ind Co Ltd 半導体記憶装置
US7709402B2 (en) 2006-02-16 2010-05-04 Micron Technology, Inc. Conductive layers for hafnium silicon oxynitride films
JP4504397B2 (ja) 2007-05-29 2010-07-14 株式会社東芝 半導体記憶装置
CN103943136B (zh) * 2013-01-17 2017-09-08 旺宏电子股份有限公司 一种存储器电路及其操作方法
JP6166810B1 (ja) * 2016-03-08 2017-07-19 力晶科技股▲ふん▼有限公司 半導体記憶装置
FR3139658A1 (fr) * 2022-09-08 2024-03-15 Stmicroelectronics (Rousset) Sas Dispositif de du type mémoire EEPROM à architecture du type à « tension partagée ».

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4179626A (en) * 1978-06-29 1979-12-18 Westinghouse Electric Corp. Sense circuit for use in variable threshold transistor memory arrays
JPS62266798A (ja) * 1986-05-13 1987-11-19 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US5033023A (en) * 1988-04-08 1991-07-16 Catalyst Semiconductor, Inc. High density EEPROM cell and process for making the cell
JP2685966B2 (ja) * 1990-06-22 1997-12-08 株式会社東芝 不揮発性半導体記憶装置
JP2563702B2 (ja) * 1990-09-25 1996-12-18 株式会社東芝 不揮発性半導体メモリ
JPH0721790A (ja) * 1993-07-05 1995-01-24 Mitsubishi Electric Corp 半導体集積回路

Also Published As

Publication number Publication date
CN1117644A (zh) 1996-02-28
JP2005228475A (ja) 2005-08-25
EP0664544A3 (de) 1996-10-02
TW281763B (de) 1996-07-21
KR950034268A (ko) 1995-12-28
JPH07254295A (ja) 1995-10-03
CN1039172C (zh) 1998-07-15
EP0664544B1 (de) 2000-05-24
KR100285219B1 (ko) 2001-04-02
DE69517060T2 (de) 2001-02-15
EP0664544A2 (de) 1995-07-26
US5434815A (en) 1995-07-18

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee