DE69517158T2 - Verfahren zum auftragen von wolframnitrid unter verwendung eines silicium enthaltenden gases - Google Patents

Verfahren zum auftragen von wolframnitrid unter verwendung eines silicium enthaltenden gases

Info

Publication number
DE69517158T2
DE69517158T2 DE69517158T DE69517158T DE69517158T2 DE 69517158 T2 DE69517158 T2 DE 69517158T2 DE 69517158 T DE69517158 T DE 69517158T DE 69517158 T DE69517158 T DE 69517158T DE 69517158 T2 DE69517158 T2 DE 69517158T2
Authority
DE
Germany
Prior art keywords
tungsten nitride
gas containing
containing silicon
applying tungsten
applying
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69517158T
Other languages
English (en)
Other versions
DE69517158D1 (de
Inventor
Scott Meikle
Trung Doan
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of DE69517158D1 publication Critical patent/DE69517158D1/de
Application granted granted Critical
Publication of DE69517158T2 publication Critical patent/DE69517158T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
DE69517158T 1994-11-30 1995-11-30 Verfahren zum auftragen von wolframnitrid unter verwendung eines silicium enthaltenden gases Expired - Lifetime DE69517158T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US34864694A 1994-11-30 1994-11-30
PCT/US1995/015559 WO1996017104A1 (en) 1994-11-30 1995-11-30 A method of depositing tungsten nitride using a source gas comprising silicon

Publications (2)

Publication Number Publication Date
DE69517158D1 DE69517158D1 (de) 2000-06-29
DE69517158T2 true DE69517158T2 (de) 2001-01-25

Family

ID=23368940

Family Applications (2)

Application Number Title Priority Date Filing Date
DE69531170T Expired - Lifetime DE69531170T2 (de) 1994-11-30 1995-11-30 Unebener Halbleiter-Speicherkondensator
DE69517158T Expired - Lifetime DE69517158T2 (de) 1994-11-30 1995-11-30 Verfahren zum auftragen von wolframnitrid unter verwendung eines silicium enthaltenden gases

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69531170T Expired - Lifetime DE69531170T2 (de) 1994-11-30 1995-11-30 Unebener Halbleiter-Speicherkondensator

Country Status (8)

Country Link
US (4) US5691235A (de)
EP (2) EP0982772B1 (de)
JP (1) JPH09509288A (de)
KR (1) KR100247455B1 (de)
AT (1) ATE193335T1 (de)
AU (1) AU4290396A (de)
DE (2) DE69531170T2 (de)
WO (1) WO1996017104A1 (de)

Families Citing this family (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI117944B (fi) 1999-10-15 2007-04-30 Asm Int Menetelmä siirtymämetallinitridiohutkalvojen kasvattamiseksi
FI118158B (sv) 1999-10-15 2007-07-31 Asm Int Förfarande för modifiering av utgångsämneskemikalierna i en ALD-prosess
FI119941B (fi) * 1999-10-15 2009-05-15 Asm Int Menetelmä nanolaminaattien valmistamiseksi
DE69531170T2 (de) * 1994-11-30 2004-05-06 Micron Technology, Inc. Unebener Halbleiter-Speicherkondensator
US5719071A (en) * 1995-12-22 1998-02-17 Sgs-Thomson Microelectronics, Inc. Method of forming a landing pad sturcture in an integrated circuit
TW365685B (en) * 1996-10-31 1999-08-01 Texas Instruments Inc Low-temperature processes for depositing barrier films containing tungsten and nitrogen
EP0841690B1 (de) * 1996-11-12 2006-03-01 Samsung Electronics Co., Ltd. Herstellungsverfahren für eine Wolframnitridschicht und metallische Leiterbahnen
US5888588A (en) * 1997-03-31 1999-03-30 Motorola, Inc. Process for forming a semiconductor device
US6309713B1 (en) * 1997-06-30 2001-10-30 Applied Materials, Inc. Deposition of tungsten nitride by plasma enhanced chemical vapor deposition
JPH11195621A (ja) 1997-11-05 1999-07-21 Tokyo Electron Ltd バリアメタル、その形成方法、ゲート電極及びその形成方法
US6861356B2 (en) 1997-11-05 2005-03-01 Tokyo Electron Limited Method of forming a barrier film and method of forming wiring structure and electrodes of semiconductor device having a barrier film
US7829144B2 (en) 1997-11-05 2010-11-09 Tokyo Electron Limited Method of forming a metal film for electrode
KR100465605B1 (ko) * 1997-12-31 2005-04-06 매그나칩 반도체 유한회사 반도체소자의제조방법
US6211082B1 (en) * 1998-02-10 2001-04-03 Samsung Electronics Co., Ltd. Chemical vapor deposition of tungsten using nitrogen-containing gas
US6004843A (en) * 1998-05-07 1999-12-21 Taiwan Semiconductor Manufacturing Company Process for integrating a MOS logic device and a MOS memory device on a single semiconductor chip
US6218288B1 (en) * 1998-05-11 2001-04-17 Micron Technology, Inc. Multiple step methods for forming conformal layers
US5923988A (en) * 1998-05-15 1999-07-13 Taiwan Semiconductor Manufacturing Company, Ltd. Two step thermal treatment procedure applied to polycide structures deposited using dichlorosilane as a reactant
US6399484B1 (en) * 1998-10-26 2002-06-04 Tokyo Electron Limited Semiconductor device fabricating method and system for carrying out the same
JP2002536549A (ja) * 1999-02-12 2002-10-29 ゲレスト インコーポレイテッド 窒化タングステンの化学蒸着
US6342417B2 (en) 1999-02-16 2002-01-29 Micron Technology, Inc. Methods of forming materials comprising tungsten and nitrogen
KR100773280B1 (ko) 1999-02-17 2007-11-05 가부시키가이샤 알박 배리어막제조방법및배리어막
US6531713B1 (en) * 1999-03-19 2003-03-11 Semiconductor Energy Laboratory Co., Ltd. Electro-optical device and manufacturing method thereof
TW444257B (en) * 1999-04-12 2001-07-01 Semiconductor Energy Lab Semiconductor device and method for fabricating the same
US6309964B1 (en) 1999-07-08 2001-10-30 Taiwan Semiconductor Manufacturing Company Method for forming a copper damascene structure over tungsten plugs with improved adhesion, oxidation resistance, and diffusion barrier properties using nitridation of the tungsten plug
JP2001035808A (ja) * 1999-07-22 2001-02-09 Semiconductor Energy Lab Co Ltd 配線およびその作製方法、この配線を備えた半導体装置、ドライエッチング方法
US6313033B1 (en) * 1999-07-27 2001-11-06 Applied Materials, Inc. Ionized metal plasma Ta, TaNx, W, and WNx liners for gate electrode applications
US6635570B1 (en) * 1999-09-30 2003-10-21 Carl J. Galewski PECVD and CVD processes for WNx deposition
US6902763B1 (en) 1999-10-15 2005-06-07 Asm International N.V. Method for depositing nanolaminate thin films on sensitive surfaces
JP4571278B2 (ja) * 2000-07-14 2010-10-27 東京エレクトロン株式会社 半導体装置の製造方法
TWI286338B (en) * 2000-05-12 2007-09-01 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
KR100593146B1 (ko) * 2000-06-20 2006-06-26 주식회사 하이닉스반도체 반도체 소자의 게이트 형성 방법
FI109770B (fi) 2001-03-16 2002-10-15 Asm Microchemistry Oy Menetelmä metallinitridiohutkalvojen valmistamiseksi
US20020190379A1 (en) * 2001-03-28 2002-12-19 Applied Materials, Inc. W-CVD with fluorine-free tungsten nucleation
US6818935B2 (en) * 2001-09-12 2004-11-16 Hynix Semiconductor Inc. Semiconductor device and method for fabricating the same
WO2003025243A2 (en) * 2001-09-14 2003-03-27 Asm International N.V. Metal nitride deposition by ald using gettering reactant
DE10200838A1 (de) * 2002-01-11 2003-07-31 Infineon Technologies Ag Verfahren zum Herstellen eines Kondensators
US20030140857A1 (en) * 2002-01-28 2003-07-31 Applied Materials, Inc. Apparatus and method for low pressure CVD deposition of tungsten and tungsten nitride
US6833161B2 (en) * 2002-02-26 2004-12-21 Applied Materials, Inc. Cyclical deposition of tungsten nitride for metal oxide gate electrode
US20030221616A1 (en) * 2002-05-28 2003-12-04 Micron Technology, Inc. Magnetically-actuatable throttle valve
EP1543177A1 (de) * 2002-07-12 2005-06-22 President And Fellows Of Harvard College Dampfabscheidung von wolframnitrid
TW200424343A (en) * 2002-09-05 2004-11-16 Asml Us Inc Low temperature deposition of silicon based thin films by single-wafer hot-wall rapid thermal chemical vapor deposition
KR100465093B1 (ko) * 2002-12-14 2005-01-05 동부전자 주식회사 반도체 소자의 제조 방법
US6863725B2 (en) * 2003-02-04 2005-03-08 Micron Technology, Inc. Method of forming a Ta2O5 comprising layer
US7230292B2 (en) * 2003-08-05 2007-06-12 Micron Technology, Inc. Stud electrode and process for making same
US7405143B2 (en) * 2004-03-25 2008-07-29 Asm International N.V. Method for fabricating a seed layer
TWI283006B (en) * 2004-08-31 2007-06-21 Hynix Semiconductor Inc Method for forming tungsten nitride film
US8993055B2 (en) 2005-10-27 2015-03-31 Asm International N.V. Enhanced thin film deposition
US8268409B2 (en) * 2006-10-25 2012-09-18 Asm America, Inc. Plasma-enhanced deposition of metal carbide films
US7611751B2 (en) 2006-11-01 2009-11-03 Asm America, Inc. Vapor deposition of metal carbide films
KR20080055159A (ko) * 2006-12-14 2008-06-19 주식회사 하이닉스반도체 반도체 소자의 제조방법
US7598170B2 (en) * 2007-01-26 2009-10-06 Asm America, Inc. Plasma-enhanced ALD of tantalum nitride films
US7595270B2 (en) * 2007-01-26 2009-09-29 Asm America, Inc. Passivated stoichiometric metal nitride films
US7713874B2 (en) * 2007-05-02 2010-05-11 Asm America, Inc. Periodic plasma annealing in an ALD-type process
US8017182B2 (en) * 2007-06-21 2011-09-13 Asm International N.V. Method for depositing thin films by mixed pulsed CVD and ALD
JP2007251211A (ja) * 2007-06-21 2007-09-27 Ulvac Japan Ltd バリア膜製造方法、及びバリア膜
US7638170B2 (en) 2007-06-21 2009-12-29 Asm International N.V. Low resistivity metal carbonitride thin film deposition by atomic layer deposition
US20090315093A1 (en) 2008-04-16 2009-12-24 Asm America, Inc. Atomic layer deposition of metal carbide films using aluminum hydrocarbon compounds
US7666474B2 (en) 2008-05-07 2010-02-23 Asm America, Inc. Plasma-enhanced pulsed deposition of metal carbide films
US10513772B2 (en) 2009-10-20 2019-12-24 Asm International N.V. Process for passivating dielectric films
JP2011166160A (ja) * 2011-03-22 2011-08-25 Tokyo Electron Ltd 積層膜の形成方法
US9412602B2 (en) 2013-03-13 2016-08-09 Asm Ip Holding B.V. Deposition of smooth metal nitride films
US8846550B1 (en) 2013-03-14 2014-09-30 Asm Ip Holding B.V. Silane or borane treatment of metal thin films
US8841182B1 (en) 2013-03-14 2014-09-23 Asm Ip Holding B.V. Silane and borane treatments for titanium carbide films
US9394609B2 (en) 2014-02-13 2016-07-19 Asm Ip Holding B.V. Atomic layer deposition of aluminum fluoride thin films
US10643925B2 (en) 2014-04-17 2020-05-05 Asm Ip Holding B.V. Fluorine-containing conductive films
US10002936B2 (en) 2014-10-23 2018-06-19 Asm Ip Holding B.V. Titanium aluminum and tantalum aluminum thin films
US9941425B2 (en) 2015-10-16 2018-04-10 Asm Ip Holdings B.V. Photoactive devices and materials
US9786491B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
US9786492B2 (en) 2015-11-12 2017-10-10 Asm Ip Holding B.V. Formation of SiOCN thin films
KR102378021B1 (ko) 2016-05-06 2022-03-23 에이에스엠 아이피 홀딩 비.브이. SiOC 박막의 형성
US10186420B2 (en) 2016-11-29 2019-01-22 Asm Ip Holding B.V. Formation of silicon-containing thin films
US10847529B2 (en) 2017-04-13 2020-11-24 Asm Ip Holding B.V. Substrate processing method and device manufactured by the same
US10504901B2 (en) 2017-04-26 2019-12-10 Asm Ip Holding B.V. Substrate processing method and device manufactured using the same
CN114875388A (zh) 2017-05-05 2022-08-09 Asm Ip 控股有限公司 用于受控形成含氧薄膜的等离子体增强沉积方法
TWI778118B (zh) * 2017-09-05 2022-09-21 美商應用材料股份有限公司 來自次氧化物的自對準結構
TWI761636B (zh) 2017-12-04 2022-04-21 荷蘭商Ａｓｍ Ｉｐ控股公司 電漿增強型原子層沉積製程及沉積碳氧化矽薄膜的方法

Family Cites Families (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5550304A (en) 1978-10-11 1980-04-12 Yoshida Kogyo Kk Fastener chain and production
JPH0763060B2 (ja) * 1984-03-15 1995-07-05 松下電器産業株式会社 半導体装置の製造方法
DE3709066A1 (de) 1986-03-31 1987-10-01 Toshiba Kawasaki Kk Verfahren zum erzeugen eines duennen metallfilms durch chemisches aufdampfen
JPH081950B2 (ja) * 1986-11-21 1996-01-10 株式会社東芝 半導体装置の製造方法
US4960732A (en) * 1987-02-19 1990-10-02 Advanced Micro Devices, Inc. Contact plug and interconnect employing a barrier lining and a backfilled conductor material
US4884123A (en) * 1987-02-19 1989-11-28 Advanced Micro Devices, Inc. Contact plug and interconnect employing a barrier lining and a backfilled conductor material
US4974056A (en) * 1987-05-22 1990-11-27 International Business Machines Corporation Stacked metal silicide gate structure with barrier
US4774201A (en) * 1988-01-07 1988-09-27 Intel Corporation Tungsten-silicide reoxidation technique using a CVD oxide cap
JP2624736B2 (ja) * 1988-01-14 1997-06-25 株式会社東芝 半導体装置の製造方法
US4847111A (en) * 1988-06-30 1989-07-11 Hughes Aircraft Company Plasma-nitridated self-aligned tungsten system for VLSI interconnections
JPH02177427A (ja) * 1988-12-28 1990-07-10 Fujitsu Ltd 半導体装置の製造方法
JPH02257618A (ja) 1989-03-29 1990-10-18 Mitsubishi Electric Corp 半導体装置及びその製造方法
US5250453A (en) * 1989-04-12 1993-10-05 Mitsubishi Denki Kabushiki Kaisha Production method of a semiconductor device
JPH03157965A (ja) * 1989-11-15 1991-07-05 Nec Corp 半導体装置
US5238872A (en) * 1990-12-11 1993-08-24 Samsung Semiconductor, Inc. Barrier metal contact architecture
KR100215338B1 (ko) * 1991-03-06 1999-08-16 가나이 쓰도무 반도체 장치의 제조방법
JP2764472B2 (ja) * 1991-03-25 1998-06-11 東京エレクトロン株式会社 半導体の成膜方法
US5124780A (en) * 1991-06-10 1992-06-23 Micron Technology, Inc. Conductive contact plug and a method of forming a conductive contact plug in an integrated circuit using laser planarization
JPH04369861A (ja) * 1991-06-19 1992-12-22 Matsushita Electric Ind Co Ltd 化合物半導体集積回路用容量素子の製造方法
KR930011538B1 (ko) 1991-07-16 1993-12-10 한국과학기술연구원 실리콘 반도체소자의 금속배선 형성용 텅스텐 질화박막 증착방법
US5192703A (en) * 1991-10-31 1993-03-09 Micron Technology, Inc. Method of making tungsten contact core stack capacitor
US5168073A (en) * 1991-10-31 1992-12-01 Micron Technology, Inc. Method for fabricating storage node capacitor having tungsten and etched tin storage node capacitor plate
JPH05129231A (ja) 1991-11-01 1993-05-25 Hitachi Ltd 電極配線
US5150276A (en) * 1992-01-24 1992-09-22 Micron Technology, Inc. Method of fabricating a vertical parallel cell capacitor having a storage node capacitor plate comprising a center fin effecting electrical communication between itself and parallel annular rings
JPH05226282A (ja) * 1992-02-13 1993-09-03 Nec Corp タングステン膜の形成方法
JPH05236282A (ja) 1992-02-25 1993-09-10 Fujitsu Ltd 画像データ復元装置
JPH06232181A (ja) * 1993-02-03 1994-08-19 Nippon Telegr & Teleph Corp <Ntt> ショットキ接合型電界効果トランジスタの製法
JP3242732B2 (ja) * 1993-03-17 2001-12-25 沖電気工業株式会社 キャパシタ
US5341016A (en) * 1993-06-16 1994-08-23 Micron Semiconductor, Inc. Low resistance device element and interconnection structure
DE69531170T2 (de) * 1994-11-30 2004-05-06 Micron Technology, Inc. Unebener Halbleiter-Speicherkondensator
JP3220034B2 (ja) * 1996-12-26 2001-10-22 株式会社東芝 半導体装置及びその製造方法
US5888588A (en) * 1997-03-31 1999-03-30 Motorola, Inc. Process for forming a semiconductor device

Also Published As

Publication number Publication date
EP0742847A1 (de) 1996-11-20
DE69531170T2 (de) 2004-05-06
US6472323B1 (en) 2002-10-29
EP0742847B1 (de) 2000-05-24
JPH09509288A (ja) 1997-09-16
ATE193335T1 (de) 2000-06-15
US20020045322A1 (en) 2002-04-18
US6429086B1 (en) 2002-08-06
DE69517158D1 (de) 2000-06-29
WO1996017104A1 (en) 1996-06-06
EP0982772A1 (de) 2000-03-01
AU4290396A (en) 1996-06-19
DE69531170D1 (de) 2003-07-31
US6730954B2 (en) 2004-05-04
KR100247455B1 (ko) 2000-04-01
US5691235A (en) 1997-11-25
EP0982772B1 (de) 2003-06-25

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