DE69520296T2 - Oberflächenbehandlungsmittel und Oberflächenbehandlung von Halbleiter - Google Patents

Oberflächenbehandlungsmittel und Oberflächenbehandlung von Halbleiter

Info

Publication number
DE69520296T2
DE69520296T2 DE69520296T DE69520296T DE69520296T2 DE 69520296 T2 DE69520296 T2 DE 69520296T2 DE 69520296 T DE69520296 T DE 69520296T DE 69520296 T DE69520296 T DE 69520296T DE 69520296 T2 DE69520296 T2 DE 69520296T2
Authority
DE
Germany
Prior art keywords
surface treatment
semiconductors
agents
treatment agents
treatment
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69520296T
Other languages
English (en)
Other versions
DE69520296D1 (de
Inventor
Ichiro Hayashida
Masahiko Kakizawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Wako Pure Chemical Corp
Original Assignee
Wako Pure Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Wako Pure Chemical Industries Ltd filed Critical Wako Pure Chemical Industries Ltd
Publication of DE69520296D1 publication Critical patent/DE69520296D1/de
Application granted granted Critical
Publication of DE69520296T2 publication Critical patent/DE69520296T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/16—Organic compounds
    • C11D3/26—Organic compounds containing nitrogen
    • C11D3/32—Amides; Substituted amides
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D3/00—Other compounding ingredients of detergent compositions covered in group C11D1/00
    • C11D3/39—Organic or inorganic per-compounds
    • C11D3/3947—Liquid compositions
    • C11D2111/22—
DE69520296T 1994-01-28 1995-01-09 Oberflächenbehandlungsmittel und Oberflächenbehandlung von Halbleiter Expired - Fee Related DE69520296T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2629194 1994-01-28

Publications (2)

Publication Number Publication Date
DE69520296D1 DE69520296D1 (de) 2001-04-19
DE69520296T2 true DE69520296T2 (de) 2001-09-06

Family

ID=12189212

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69520296T Expired - Fee Related DE69520296T2 (de) 1994-01-28 1995-01-09 Oberflächenbehandlungsmittel und Oberflächenbehandlung von Halbleiter

Country Status (5)

Country Link
US (2) US5580846A (de)
EP (1) EP0665582B1 (de)
KR (1) KR100278210B1 (de)
DE (1) DE69520296T2 (de)
TW (1) TW274630B (de)

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US5932022A (en) * 1998-04-21 1999-08-03 Harris Corporation SC-2 based pre-thermal treatment wafer cleaning process
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US7064070B2 (en) 1998-09-28 2006-06-20 Tokyo Electron Limited Removal of CMP and post-CMP residue from semiconductors using supercritical carbon dioxide process
US6344432B1 (en) 1999-08-20 2002-02-05 Advanced Technology Materials, Inc. Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures
EP1091395A1 (de) * 1999-09-30 2001-04-11 Interuniversitair Microelektronica Centrum Vzw Reinigungslösung für Behandlung von Halbleitersubstraten
US6652972B1 (en) 1999-11-01 2003-11-25 Schott Glass Technologies Inc. Low temperature joining of phosphate glass
US6748960B1 (en) 1999-11-02 2004-06-15 Tokyo Electron Limited Apparatus for supercritical processing of multiple workpieces
US6723691B2 (en) * 1999-11-16 2004-04-20 Advanced Technology Materials, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US6492308B1 (en) * 1999-11-16 2002-12-10 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
WO2001098225A1 (en) 2000-06-20 2001-12-27 Schott Glass Technologies, Inc. Glass ceramic composites
US7456113B2 (en) * 2000-06-26 2008-11-25 Applied Materials, Inc. Cleaning method and solution for cleaning a wafer in a single wafer process
US6927176B2 (en) * 2000-06-26 2005-08-09 Applied Materials, Inc. Cleaning method and solution for cleaning a wafer in a single wafer process
US6882782B2 (en) * 2000-11-01 2005-04-19 Schott Glas Photonic devices for optical and optoelectronic information processing
KR100822236B1 (ko) * 2000-11-30 2008-04-16 토소가부시키가이샤 레지스트 박리제
US6566315B2 (en) 2000-12-08 2003-05-20 Advanced Technology Materials, Inc. Formulations including a 1,3-dicarbonyl compound chelating agent and copper corrosion inhibiting agents for stripping residues from semiconductor substrates containing copper structures
EP1389496A1 (de) * 2001-05-22 2004-02-18 Mitsubishi Chemical Corporation Verfahren zur reinigung einer substratfläche
US20030148624A1 (en) * 2002-01-31 2003-08-07 Kazuto Ikemoto Method for removing resists
US6924086B1 (en) 2002-02-15 2005-08-02 Tokyo Electron Limited Developing photoresist with supercritical fluid and developer
JP2006508521A (ja) * 2002-02-15 2006-03-09 東京エレクトロン株式会社 溶剤浴と超臨界ｃｏ２を用いたレジストの乾燥
AU2003220039A1 (en) 2002-03-04 2003-09-22 Supercritical Systems Inc. Method of passivating of low dielectric materials in wafer processing
AU2003220443A1 (en) * 2002-03-22 2003-10-13 Supercritical Systems Inc. Removal of contaminants using supercritical processing
US7169540B2 (en) 2002-04-12 2007-01-30 Tokyo Electron Limited Method of treatment of porous dielectric films to reduce damage during cleaning
US20040002430A1 (en) * 2002-07-01 2004-01-01 Applied Materials, Inc. Using a time critical wafer cleaning solution by combining a chelating agent with an oxidizer at point-of-use
US20040177867A1 (en) * 2002-12-16 2004-09-16 Supercritical Systems, Inc. Tetra-organic ammonium fluoride and HF in supercritical fluid for photoresist and residue removal
WO2005001016A1 (en) * 2003-06-27 2005-01-06 Interuniversitair Microelektronica Centrum (Imec) Semiconductor cleaning solution
US7432233B2 (en) * 2003-12-18 2008-10-07 Interuniversitair Microelektronica Centrum (Imec) Composition and method for treating a semiconductor substrate
US20060073997A1 (en) * 2004-09-30 2006-04-06 Lam Research Corporation Solutions for cleaning silicon semiconductors or silicon oxides
US7550075B2 (en) 2005-03-23 2009-06-23 Tokyo Electron Ltd. Removal of contaminants from a fluid
US7442636B2 (en) 2005-03-30 2008-10-28 Tokyo Electron Limited Method of inhibiting copper corrosion during supercritical CO2 cleaning
US7399708B2 (en) 2005-03-30 2008-07-15 Tokyo Electron Limited Method of treating a composite spin-on glass/anti-reflective material prior to cleaning
US7789971B2 (en) 2005-05-13 2010-09-07 Tokyo Electron Limited Treatment of substrate using functionalizing agent in supercritical carbon dioxide
EP2580303B1 (de) 2010-06-09 2018-08-29 Basf Se Wässrige alkalische ätz- und reinigungszusammensetzung sowie verfahren zur behandlung von oberflächen von siliciumsubstraten
ES2541222T3 (es) 2011-08-09 2015-07-16 Basf Se Composiciones alcalinas acuosas y procedimiento de tratamiento de la superficie de sustratos de silicio
JP6154860B2 (ja) * 2015-07-17 2017-06-28 野村マイクロ・サイエンス株式会社 洗浄用水素水の製造方法及び製造装置

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GB999583A (en) * 1959-09-25 1965-07-28 Ciba Ltd Pharmaceutical preparations containing trihydroxamic acids
JPS50147284A (de) * 1974-05-15 1975-11-26
JPS50158281A (de) * 1974-06-10 1975-12-22
GB1573206A (en) * 1975-11-26 1980-08-20 Tokyo Shibaura Electric Co Method of trating surfaces of intermediate products obtained in the manufacture of semiconductor devices
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JPS5350977A (en) * 1976-10-21 1978-05-09 Toshiba Corp Semiconductor surface treating agent
US4419365A (en) * 1981-12-21 1983-12-06 Ciba-Geigy Corporation Method of treating Alzheimer's disease
US4972837A (en) * 1983-04-26 1990-11-27 Regents Of The University Of California Contrast agents for nuclear magnetic resonance imaging
US4611053A (en) * 1985-02-15 1986-09-09 Sasa Michiyuki Mitch Polyhydroxamide polymer
US4863964A (en) * 1985-07-02 1989-09-05 Biomedical Frontiers, Inc. Method for the stabilization of deferoxamine to chelate free ions in physiological fluid
US5093040A (en) * 1987-08-12 1992-03-03 American Cyanamid Company Complex N-hydroxyimide compounds and their use as detergent additives
US4837164A (en) * 1988-04-27 1989-06-06 Bionix Corporation Methods for diagonosing, monitoring and controlling the onset and progression of certain dementias and impeding memory loss or improving impairment of memory
US4987253A (en) * 1988-09-19 1991-01-22 University Of Florida Method for the synthesis of desferrioxamine B and analogs thereof
JP2599021B2 (ja) * 1989-11-09 1997-04-09 新日本製鐵株式会社 シリコンウエハのエッチング方法および洗浄方法
US5011976A (en) * 1990-07-06 1991-04-30 The Upjohn Company Intermediate for the preparation of deferoxamine
DE69231971T2 (de) * 1991-01-24 2002-04-04 Wako Pure Chem Ind Ltd Lösungen zur Oberflächenbehandlung von Halbleitern
JP3075290B2 (ja) * 1991-02-28 2000-08-14 三菱瓦斯化学株式会社 半導体基板の洗浄液
FI90951C (fi) * 1991-11-01 1994-04-25 Valtion Teknillinen Puunsuojausmenetelmä ja puunsuoja-aine
US5371234A (en) * 1992-09-23 1994-12-06 The Unites States Of America As Represented By The Secretary Of Commerce Ion specific chelating agents derived from β-hydroxyhistidine, 4-(1-hydroxy-1-alkyl)imidazole and derivatives thereof

Also Published As

Publication number Publication date
US5840127A (en) 1998-11-24
DE69520296D1 (de) 2001-04-19
TW274630B (de) 1996-04-21
KR950034561A (ko) 1995-12-28
EP0665582A3 (de) 1995-08-16
EP0665582B1 (de) 2001-03-14
KR100278210B1 (ko) 2001-09-17
US5580846A (en) 1996-12-03
EP0665582A2 (de) 1995-08-02

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Legal Events

Date Code Title Description
8339 Ceased/non-payment of the annual fee