DE69525910D1 - Optisches Aufzeichnungsmedium - Google Patents
Optisches AufzeichnungsmediumInfo
- Publication number
- DE69525910D1 DE69525910D1 DE69525910T DE69525910T DE69525910D1 DE 69525910 D1 DE69525910 D1 DE 69525910D1 DE 69525910 T DE69525910 T DE 69525910T DE 69525910 T DE69525910 T DE 69525910T DE 69525910 D1 DE69525910 D1 DE 69525910D1
- Authority
- DE
- Germany
- Prior art keywords
- recording medium
- optical recording
- optical
- medium
- recording
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24308—Metals or metalloids transition metal elements of group 11 (Cu, Ag, Au)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/2431—Metals or metalloids group 13 elements (B, Al, Ga, In)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24314—Metals or metalloids group 15 elements (e.g. Sb, Bi)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
- G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
- G11B2007/24302—Metals or metalloids
- G11B2007/24316—Metals or metalloids group 16 elements (i.e. chalcogenides, Se, Te)
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
- G11B7/0055—Erasing
- G11B7/00557—Erasing involving phase-change media
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
- G11B7/2533—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins
- G11B7/2534—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins polycarbonates [PC]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/254—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers
- G11B7/2542—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of protective topcoat layers consisting essentially of organic resins
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
- G11B7/2585—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers based on aluminium
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
- G11B7/259—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers based on silver
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
- G11B7/252—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers
- G11B7/258—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers
- G11B7/2595—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of reflective layers based on gold
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
- G11B7/26—Apparatus or processes specially adapted for the manufacture of record carriers
- G11B7/266—Sputtering or spin-coating layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/913—Material designed to be responsive to temperature, light, moisture
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/146—Laser beam
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/21—Circular sheet or circular blank
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP33253294A JP3693125B2 (ja) | 1993-12-13 | 1994-12-13 | 光記録媒体 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69525910D1 true DE69525910D1 (de) | 2002-04-25 |
DE69525910T2 DE69525910T2 (de) | 2002-10-31 |
Family
ID=18255978
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69525910T Expired - Lifetime DE69525910T2 (de) | 1994-12-13 | 1995-12-13 | Optisches Aufzeichnungsmedium |
DE69535473T Expired - Lifetime DE69535473T2 (de) | 1994-12-13 | 1995-12-13 | Zerstäubungstarget, Verfahren zur Herstellung des Zerstäubungstargets, und Verfahren zur Herstellung des optischen Aufzeichnungsmediums |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69535473T Expired - Lifetime DE69535473T2 (de) | 1994-12-13 | 1995-12-13 | Zerstäubungstarget, Verfahren zur Herstellung des Zerstäubungstargets, und Verfahren zur Herstellung des optischen Aufzeichnungsmediums |
Country Status (3)
Country | Link |
---|---|
US (4) | US5785828A (de) |
EP (2) | EP0717404B1 (de) |
DE (2) | DE69525910T2 (de) |
Families Citing this family (182)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5785828A (en) * | 1994-12-13 | 1998-07-28 | Ricoh Company, Ltd. | Sputtering target for producing optical recording medium |
US6319368B1 (en) * | 1995-03-31 | 2001-11-20 | Ricoh Company, Ltd. | Sputtering target, method of producing the target, optical recording medium fabricated by using the sputtering target, and method of forming recording layer for the optical recording medium |
JP3525197B2 (ja) * | 1996-02-27 | 2004-05-10 | 株式会社リコー | 相変化型光記録媒体 |
US5948496A (en) * | 1996-09-06 | 1999-09-07 | Ricoh Company, Ltd. | Optical recording medium |
JP3255051B2 (ja) * | 1996-12-05 | 2002-02-12 | 三菱化学株式会社 | 光学的情報記録用媒体 |
DE69837168T2 (de) * | 1997-03-27 | 2007-10-31 | Mitsubishi Kagaku Media Co. Ltd. | Optisches Informationsaufzeichnungsmedium |
KR100248299B1 (ko) * | 1997-09-24 | 2000-03-15 | 구자홍 | 광기록매체의초기화방법및그의장치 |
DE19857315A1 (de) | 1997-12-12 | 1999-08-05 | Ricoh Kk | Optisches Informationsspeichermaterial und Anzeige-Aufzeichnungsverfahren unter Verwendung desselben |
US6426936B1 (en) | 1998-01-27 | 2002-07-30 | Ricoh Company, Ltd. | Phase-change medium usable in phase-difference tracking |
EP0957476B1 (de) * | 1998-05-13 | 2005-05-11 | Ricoh Company, Ltd. | Optisches Aufzeichnungsmedium vom Phasenwechsel-Typ |
JPH11348422A (ja) * | 1998-06-05 | 1999-12-21 | Sony Corp | 光記録媒体及びその製造方法 |
EP1047056B1 (de) | 1998-09-09 | 2011-02-23 | Mitsubishi Kagaku Media Co., Ltd. | Optisches aufzeichnungsmedium und optisches aufzeichnungsverfahren |
JP2000229478A (ja) * | 1998-12-09 | 2000-08-22 | Tdk Corp | 光記録媒体 |
US6600725B1 (en) * | 1998-12-16 | 2003-07-29 | At&T Corp. | Apparatus and method for providing multimedia conferencing services with selective information services |
JP2000322740A (ja) * | 1999-05-12 | 2000-11-24 | Ricoh Co Ltd | 光記録媒体及びその記録方法 |
JP2000339751A (ja) * | 1999-06-01 | 2000-12-08 | Ricoh Co Ltd | 相変化形光記録媒体 |
US6592958B2 (en) * | 2000-05-25 | 2003-07-15 | Ricoh Company, Ltd. | Optical recording medium and sputtering target for fabricating the recording medium |
DE60125675T2 (de) | 2000-09-28 | 2007-10-11 | Ricoh Company, Ltd. | Optisches Aufzeichnungsmedium, Verfahren zu dessen Herstellung und Verfahren und Vorrichtung zum Aufzeichnen auf oder Lesen von diesem Medium |
TW565835B (en) * | 2001-01-10 | 2003-12-11 | Ricoh Kk | Phase change optical recording medium |
EP1229530A3 (de) * | 2001-02-01 | 2006-10-18 | Ricoh Company, Ltd. | Optisches Informationsaufzeichnungsmedium |
JP2002237096A (ja) * | 2001-02-09 | 2002-08-23 | Ricoh Co Ltd | 光記録媒体 |
EP1397801B1 (de) * | 2001-06-01 | 2008-01-02 | Koninklijke Philips Electronics N.V. | Wiederbeschreibbares optisches aufzeichnungsmedium und seine verwendung |
US7027382B2 (en) | 2001-06-26 | 2006-04-11 | Ricoh Company, Ltd. | Optical recording medium having relation between reflection layer and pit lengths |
CN1410972A (zh) * | 2001-09-25 | 2003-04-16 | 株式会社理光 | 光信息记录媒体,信息消去方法,信息记录方法及装置 |
US20030099903A1 (en) * | 2001-11-28 | 2003-05-29 | Ju Ming Liang | Rewritable optical information recording medium |
JP3771859B2 (ja) * | 2002-03-27 | 2006-04-26 | 株式会社リコー | 光情報記録方法及び光情報記録装置 |
WO2003098616A1 (fr) * | 2002-05-15 | 2003-11-27 | Matsushita Electric Industrial Co., Ltd. | Tete optique |
JP2004046966A (ja) * | 2002-07-11 | 2004-02-12 | Ricoh Co Ltd | 光情報記録媒体、記録条件決定方法、光情報記録装置及び情報処理装置 |
EP1385160B1 (de) * | 2002-07-22 | 2006-10-11 | Ricoh Company, Ltd. | Optisches Phasenübergangsaufzeichnungsmedium |
US6864503B2 (en) * | 2002-08-09 | 2005-03-08 | Macronix International Co., Ltd. | Spacer chalcogenide memory method and device |
US7364644B2 (en) | 2002-08-29 | 2008-04-29 | Micron Technology, Inc. | Silver selenide film stoichiometry and morphology control in sputter deposition |
EP1475793B1 (de) * | 2003-04-15 | 2007-12-05 | Ricoh Company, Ltd. | Einmal beschreibbarer, mehrmals lesbarer optischer Datenträger und Verfahren zum Beschreiben und Lesen des Datenträgers |
US8430978B2 (en) * | 2003-08-05 | 2013-04-30 | Jx Nippon Mining & Metals Corporation | Sputtering target and method for production thereof |
JP2005251265A (ja) * | 2004-03-02 | 2005-09-15 | Ricoh Co Ltd | 相変化型光記録媒体 |
JP4382646B2 (ja) * | 2004-05-17 | 2009-12-16 | 株式会社リコー | 光記録媒体とその製造方法 |
DE602005022044D1 (de) * | 2004-08-31 | 2010-08-12 | Ricoh Kk | Optisches worm-aufzeichnungsmedium (worm - write-once-read-many) und sputter-target davon |
KR20070084209A (ko) * | 2004-11-15 | 2007-08-24 | 닛코 킨조쿠 가부시키가이샤 | 금속 유리막 제조용 스퍼터링 타겟 및 그 제조 방법 |
US7608503B2 (en) | 2004-11-22 | 2009-10-27 | Macronix International Co., Ltd. | Side wall active pin memory and manufacturing method |
US7220983B2 (en) * | 2004-12-09 | 2007-05-22 | Macronix International Co., Ltd. | Self-aligned small contact phase-change memory method and device |
US7709334B2 (en) | 2005-12-09 | 2010-05-04 | Macronix International Co., Ltd. | Stacked non-volatile memory device and methods for fabricating the same |
US7514367B2 (en) * | 2005-06-17 | 2009-04-07 | Macronix International Co., Ltd. | Method for manufacturing a narrow structure on an integrated circuit |
US7696503B2 (en) | 2005-06-17 | 2010-04-13 | Macronix International Co., Ltd. | Multi-level memory cell having phase change element and asymmetrical thermal boundary |
US7534647B2 (en) | 2005-06-17 | 2009-05-19 | Macronix International Co., Ltd. | Damascene phase change RAM and manufacturing method |
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Also Published As
Publication number | Publication date |
---|---|
US6503592B1 (en) | 2003-01-07 |
US6127016A (en) | 2000-10-03 |
US6280684B1 (en) | 2001-08-28 |
US5785828A (en) | 1998-07-28 |
EP0717404B1 (de) | 2002-03-20 |
EP0717404A1 (de) | 1996-06-19 |
DE69525910T2 (de) | 2002-10-31 |
EP0969457B1 (de) | 2007-04-18 |
DE69535473D1 (de) | 2007-05-31 |
DE69535473T2 (de) | 2008-01-03 |
EP0969457A3 (de) | 2000-01-12 |
EP0969457A2 (de) | 2000-01-05 |
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