DE69526041D1 - Halbleiterlaser, Modulationsverfahren und optisches Kommunikationssystem - Google Patents

Halbleiterlaser, Modulationsverfahren und optisches Kommunikationssystem

Info

Publication number
DE69526041D1
DE69526041D1 DE69526041T DE69526041T DE69526041D1 DE 69526041 D1 DE69526041 D1 DE 69526041D1 DE 69526041 T DE69526041 T DE 69526041T DE 69526041 T DE69526041 T DE 69526041T DE 69526041 D1 DE69526041 D1 DE 69526041D1
Authority
DE
Germany
Prior art keywords
communication system
semiconductor laser
optical communication
modulation process
modulation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69526041T
Other languages
English (en)
Other versions
DE69526041T2 (de
Inventor
Tamayo Hiroki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP6334065A external-priority patent/JPH08172244A/ja
Priority claimed from JP6334063A external-priority patent/JPH08172243A/ja
Priority claimed from JP6334064A external-priority patent/JPH08172234A/ja
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69526041D1 publication Critical patent/DE69526041D1/de
Application granted granted Critical
Publication of DE69526041T2 publication Critical patent/DE69526041T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06236—Controlling other output parameters than intensity or frequency controlling the polarisation, e.g. TM/TE polarisation switching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/0625—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes in multi-section lasers
    • H01S5/06255—Controlling the frequency of the radiation
    • H01S5/06258—Controlling the frequency of the radiation with DFB-structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/1206—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers having a non constant or multiplicity of periods
    • H01S5/1209—Sampled grating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3403—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation
    • H01S5/3404—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers having a strained layer structure in which the strain performs a special function, e.g. general strain effects, strain versus polarisation influencing the polarisation
DE69526041T 1994-12-17 1995-12-14 Halbleiterlaser, Modulationsverfahren und optisches Kommunikationssystem Expired - Fee Related DE69526041T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP6334065A JPH08172244A (ja) 1994-12-17 1994-12-17 光伝送装置およびその変調方式
JP6334063A JPH08172243A (ja) 1994-12-17 1994-12-17 光伝送装置及びその変調方式
JP6334064A JPH08172234A (ja) 1994-12-17 1994-12-17 光伝送装置およびその変調方式

Publications (2)

Publication Number Publication Date
DE69526041D1 true DE69526041D1 (de) 2002-05-02
DE69526041T2 DE69526041T2 (de) 2002-08-22

Family

ID=27340638

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69526041T Expired - Fee Related DE69526041T2 (de) 1994-12-17 1995-12-14 Halbleiterlaser, Modulationsverfahren und optisches Kommunikationssystem

Country Status (3)

Country Link
US (1) US5841799A (de)
EP (1) EP0717480B1 (de)
DE (1) DE69526041T2 (de)

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AUPN694795A0 (en) * 1995-12-01 1996-01-04 University Of Sydney, The Distributed feedback ring laser
US6075799A (en) * 1996-08-28 2000-06-13 Canon Kabushiki Kaisha Polarization selective semiconductor laser, optical transmitter using the same, optical communication system using the same and fabrication method of the same
US6327289B1 (en) 1997-09-02 2001-12-04 Matsushita Electric Industrial Co., Ltd. Wavelength-variable semiconductor laser, optical integrated device utilizing the same, and production method thereof
US6687278B1 (en) * 1999-09-02 2004-02-03 Agility Communications, Inc. Method of generating an optical signal with a tunable laser source with integrated optical amplifier
US6580739B1 (en) * 1999-09-02 2003-06-17 Agility Communications, Inc. Integrated opto-electronic wavelength converter assembly
US6909734B2 (en) 1999-09-02 2005-06-21 Agility Communications, Inc. High-power, manufacturable sampled grating distributed Bragg reflector lasers
AU2470301A (en) * 1999-10-29 2001-05-08 E20 Communications, Inc. Modulated integrated optically pumped vertical cavity surface emitting lasers
US6424669B1 (en) * 1999-10-29 2002-07-23 E20 Communications, Inc. Integrated optically pumped vertical cavity surface emitting laser
JP4989834B2 (ja) 2000-05-04 2012-08-01 ジェイディーエス ユニフェイズ コーポレイション サンプル格子分布型ブラッグ反射レーザー用のミラー及び空洞設計の改良
US6937638B2 (en) * 2000-06-09 2005-08-30 Agility Communications, Inc. Manufacturable sampled grating mirrors
CA2410964C (en) * 2000-06-02 2010-11-30 Larry A. Coldren High-power, manufacturable sampled grating distributed bragg reflector lasers
JP2001347566A (ja) * 2000-06-06 2001-12-18 Tokin Corp 熱収縮チューブ及び熱収縮シート及びそれらの収縮方法
JP3772650B2 (ja) * 2000-07-13 2006-05-10 日本電気株式会社 モード同期半導体レーザの駆動方法及び装置
US6728290B1 (en) 2000-09-13 2004-04-27 The Board Of Trustees Of The University Of Illinois Current biased dual DBR grating semiconductor laser
US6556610B1 (en) 2001-04-12 2003-04-29 E20 Communications, Inc. Semiconductor lasers
US6717964B2 (en) * 2001-07-02 2004-04-06 E20 Communications, Inc. Method and apparatus for wavelength tuning of optically pumped vertical cavity surface emitting lasers
JP4770077B2 (ja) * 2001-07-04 2011-09-07 三菱電機株式会社 波長可変半導体レーザおよび光モジュール
US6822980B2 (en) * 2001-07-25 2004-11-23 Adc Telecommunications, Inc. Tunable semiconductor laser with integrated wideband reflector
US6665105B2 (en) 2001-07-31 2003-12-16 Agility Communications, Inc. Tunable electro-absorption modulator
JP2003133638A (ja) * 2001-08-14 2003-05-09 Furukawa Electric Co Ltd:The 分布帰還型半導体レーザ素子及びレーザモジュール
US7653093B2 (en) * 2001-09-10 2010-01-26 Imec Widely tunable twin guide laser structure
FR2831005B1 (fr) * 2001-10-15 2004-04-30 Cit Alcatel Generateur de breves impulsions optiques
US6839377B2 (en) * 2001-10-26 2005-01-04 Agere Systems, Inc. Optoelectronic device having a fiber grating stabilized pump module with increased locking range and a method of manufacture therefor
US6810058B2 (en) * 2002-04-23 2004-10-26 Adc Telecommunications, Inc. Semiconductor laser with gain waveguide layer providing transversal and longitudinal mode stability
KR100519922B1 (ko) * 2002-12-17 2005-10-10 한국전자통신연구원 다영역 자기모드 잠김 반도체 레이저 다이오드
KR100519921B1 (ko) * 2002-12-17 2005-10-10 한국전자통신연구원 초고주파 펄스 광원소자
KR100541913B1 (ko) * 2003-05-02 2006-01-10 한국전자통신연구원 추출 격자 브래그 반사기와 결합된 추출 격자 분포궤환파장가변 반도체 레이저
JP4657853B2 (ja) * 2005-08-11 2011-03-23 住友電工デバイス・イノベーション株式会社 半導体レーザ、レーザモジュール、光学部品、レーザ装置、半導体レーザの製造方法および半導体レーザの制御方法
JP4772564B2 (ja) * 2006-03-31 2011-09-14 住友電工デバイス・イノベーション株式会社 光半導体素子および光半導体装置
CN100377453C (zh) * 2006-05-12 2008-03-26 何建军 带有电吸收光栅结构的q-调制半导体激光器
JP6684094B2 (ja) * 2015-03-20 2020-04-22 古河電気工業株式会社 波長可変レーザ素子およびレーザモジュール
US20230420919A1 (en) * 2020-12-03 2023-12-28 Ams-Osram International Gmbh Radiation-Emitting Laser Diode, Method for Choosing Refractive Indices of a Waveguide Layer Sequence for a Radiation-Emitting Laser Diode and Method for Producing a Radiation-Emitting Laser Diode

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6242593A (ja) * 1985-08-20 1987-02-24 Fujitsu Ltd 半導体発光装置
JPH02159671A (ja) * 1988-11-29 1990-06-19 Internatl Business Mach Corp <Ibm> ステープルされた文書をフアイルする方法
JPH02159781A (ja) * 1988-12-14 1990-06-19 Toshiba Corp 光通信装置
JP3210159B2 (ja) * 1993-12-10 2001-09-17 キヤノン株式会社 半導体レーザ、光源装置、光通信システム及び光通信方法
JPH07307530A (ja) * 1994-03-17 1995-11-21 Canon Inc 偏波変調可能な半導体レーザ

Also Published As

Publication number Publication date
US5841799A (en) 1998-11-24
EP0717480A1 (de) 1996-06-19
EP0717480B1 (de) 2002-03-27
DE69526041T2 (de) 2002-08-22

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee