DE69527388T2 - EEPROM-Zelle mit Isolationstransistor und Betriebs- und Herstellungsverfahren - Google Patents
EEPROM-Zelle mit Isolationstransistor und Betriebs- und HerstellungsverfahrenInfo
- Publication number
- DE69527388T2 DE69527388T2 DE69527388T DE69527388T DE69527388T2 DE 69527388 T2 DE69527388 T2 DE 69527388T2 DE 69527388 T DE69527388 T DE 69527388T DE 69527388 T DE69527388 T DE 69527388T DE 69527388 T2 DE69527388 T2 DE 69527388T2
- Authority
- DE
- Germany
- Prior art keywords
- operating
- manufacturing process
- eeprom cell
- isolation transistor
- isolation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000002955 isolation Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/225,868 US5471422A (en) | 1994-04-11 | 1994-04-11 | EEPROM cell with isolation transistor and methods for making and operating the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69527388D1 DE69527388D1 (de) | 2002-08-22 |
| DE69527388T2 true DE69527388T2 (de) | 2002-11-28 |
Family
ID=22846582
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69527388T Expired - Lifetime DE69527388T2 (de) | 1994-04-11 | 1995-04-06 | EEPROM-Zelle mit Isolationstransistor und Betriebs- und Herstellungsverfahren |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US5471422A (de) |
| EP (1) | EP0676811B1 (de) |
| JP (1) | JP3055426B2 (de) |
| KR (1) | KR100198911B1 (de) |
| CN (1) | CN1038080C (de) |
| DE (1) | DE69527388T2 (de) |
| TW (1) | TW262593B (de) |
Families Citing this family (77)
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| KR100217900B1 (ko) * | 1996-04-01 | 1999-09-01 | 김영환 | 플래쉬 메모리 셀의 프로그램 방법 |
| TW334581B (en) * | 1996-06-04 | 1998-06-21 | Handotai Energy Kenkyusho Kk | Semiconductor integrated circuit and fabrication method thereof |
| US5936889A (en) * | 1996-07-12 | 1999-08-10 | Lg Semicon Co., Ltd. | Array of nonvolatile memory device and method for fabricating the same |
| US5721704A (en) * | 1996-08-23 | 1998-02-24 | Motorola, Inc. | Control gate driver circuit for a non-volatile memory and memory using same |
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| US5729493A (en) * | 1996-08-23 | 1998-03-17 | Motorola Inc. | Memory suitable for operation at low power supply voltages and sense amplifier therefor |
| US5914514A (en) * | 1996-09-27 | 1999-06-22 | Xilinx, Inc. | Two transistor flash EPROM cell |
| DE19650786A1 (de) * | 1996-12-06 | 1998-06-10 | Siemens Ag | EEPROM-Speicherzelle |
| US6835979B1 (en) * | 1997-04-11 | 2004-12-28 | Altera Corporation | Nonvolatle memory |
| US6027974A (en) * | 1997-04-11 | 2000-02-22 | Programmable Silicon Solutions | Nonvolatile memory |
| US6159800A (en) * | 1997-04-11 | 2000-12-12 | Programmable Silicon Solutions | Method of forming a memory cell |
| US6420753B1 (en) | 1997-06-30 | 2002-07-16 | Winbond Memory Laboratory | Electrically selectable and alterable memory cells |
| US6146943A (en) * | 1997-07-09 | 2000-11-14 | Hyundai Electronics Industries Co., Ltd. | Method for fabricating nonvolatile memory device |
| JP3586072B2 (ja) | 1997-07-10 | 2004-11-10 | 株式会社東芝 | 不揮発性半導体記憶装置 |
| JPH1187658A (ja) * | 1997-09-05 | 1999-03-30 | Mitsubishi Electric Corp | メモリセルおよびそれを備える不揮発性半導体記憶装置 |
| US5981340A (en) * | 1997-09-29 | 1999-11-09 | Motorola, Inc. | Method of building an EPROM cell without drain disturb and reduced select gate resistance |
| JP3378879B2 (ja) | 1997-12-10 | 2003-02-17 | 松下電器産業株式会社 | 不揮発性半導体記憶装置及びその駆動方法 |
| US6069382A (en) * | 1998-02-11 | 2000-05-30 | Cypress Semiconductor Corp. | Non-volatile memory cell having a high coupling ratio |
| US6124157A (en) * | 1998-03-20 | 2000-09-26 | Cypress Semiconductor Corp. | Integrated non-volatile and random access memory and method of forming the same |
| US6207991B1 (en) | 1998-03-20 | 2001-03-27 | Cypress Semiconductor Corp. | Integrated non-volatile and CMOS memories having substantially the same thickness gates and methods of forming the same |
| US6114724A (en) * | 1998-03-31 | 2000-09-05 | Cypress Semiconductor Corporation | Nonvolatile semiconductor memory cell with select gate |
| US6157574A (en) * | 1998-04-01 | 2000-12-05 | National Semiconductor Corporation | Erasable frohmann-bentchkowsky memory transistor that stores multiple bits of data |
| US5862082A (en) * | 1998-04-16 | 1999-01-19 | Xilinx, Inc. | Two transistor flash EEprom cell and method of operating same |
| US6327182B1 (en) | 1998-06-22 | 2001-12-04 | Motorola Inc. | Semiconductor device and a method of operation the same |
| EP0969507B1 (de) | 1998-06-30 | 2006-11-15 | STMicroelectronics S.r.l. | Verfahren zur Herstellung einer EEPROM-Speicherzelle |
| US6232634B1 (en) | 1998-07-29 | 2001-05-15 | Motorola, Inc. | Non-volatile memory cell and method for manufacturing same |
| JP2000068484A (ja) | 1998-08-19 | 2000-03-03 | Nec Corp | 不揮発性半導体記憶装置及びその製造方法並びに不揮発 性半導体記憶装置を内蔵したマイクロコンピュータ及び その製造方法 |
| JP3344331B2 (ja) * | 1998-09-30 | 2002-11-11 | 日本電気株式会社 | 不揮発性半導体記憶装置 |
| DE69821939D1 (de) | 1998-10-15 | 2004-04-01 | St Microelectronics Srl | Vereinfachtes Verfahren zur Bestimmung des Tunnelgebiets in nichtflüchtigen, nicht selbstjustierten Halbleiterspeicherzellen |
| EP1119875A1 (de) * | 1999-06-04 | 2001-08-01 | Koninklijke Philips Electronics N.V. | Halbleiterbauteil mit festwertspeicher |
| US6295229B1 (en) | 1999-07-08 | 2001-09-25 | Motorola Inc. | Semiconductor device and method of operating it |
| DE19946884A1 (de) * | 1999-09-30 | 2001-04-12 | Micronas Gmbh | Eprom-Struktur für Halbleiterspeicher |
| US6307781B1 (en) * | 1999-09-30 | 2001-10-23 | Infineon Technologies Aktiengesellschaft | Two transistor flash memory cell |
| JP4666783B2 (ja) * | 2000-02-01 | 2011-04-06 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US6240015B1 (en) * | 2000-04-07 | 2001-05-29 | Taiwan Semiconductor Manufacturing Corporation | Method for reading 2-bit ETOX cells using gate induced drain leakage current |
| TW529160B (en) * | 2000-12-22 | 2003-04-21 | Koninkl Philips Electronics Nv | Semiconductor device comprising an electrically erasable programmable read only memory and a flash-erasable programmable read only memory, and method of manufacturing such a semiconductor device |
| JP2002237191A (ja) * | 2001-02-13 | 2002-08-23 | Seiko Instruments Inc | 相補型不揮発性記憶回路 |
| JP3640180B2 (ja) * | 2001-07-23 | 2005-04-20 | セイコーエプソン株式会社 | 不揮発性半導体記憶装置 |
| US6980472B2 (en) * | 2001-12-13 | 2005-12-27 | Koninklijke Philips Electronics N.V. | Device and method to read a 2-transistor flash memory cell |
| JP2003188361A (ja) | 2001-12-20 | 2003-07-04 | Mitsubishi Electric Corp | ゲートアレイ構造の半導体集積回路 |
| US6650563B2 (en) * | 2002-04-23 | 2003-11-18 | Broadcom Corporation | Compact and highly efficient DRAM cell |
| US6876582B2 (en) * | 2002-05-24 | 2005-04-05 | Hynix Semiconductor, Inc. | Flash memory cell erase scheme using both source and channel regions |
| US6949423B1 (en) * | 2003-11-26 | 2005-09-27 | Oakvale Technology | MOSFET-fused nonvolatile read-only memory cell (MOFROM) |
| CN1305130C (zh) * | 2003-12-01 | 2007-03-14 | 联华电子股份有限公司 | 一种非挥发性存储器及其运作方法 |
| US20050145924A1 (en) * | 2004-01-07 | 2005-07-07 | I-Sheng Liu | Source/drain adjust implant |
| US7052959B2 (en) * | 2004-01-08 | 2006-05-30 | Semiconductor Components Industries, Llc | Method of forming an EPROM cell and structure therefor |
| TWI233691B (en) * | 2004-05-12 | 2005-06-01 | Powerchip Semiconductor Corp | Nonvolatile memory, nonvolatile memory array and manufacturing method thereof |
| JP2006048749A (ja) * | 2004-07-30 | 2006-02-16 | Seiko Epson Corp | 不揮発性記憶装置及び不揮発性記憶装置のデータ書き込み方法 |
| JP4683995B2 (ja) | 2005-04-28 | 2011-05-18 | ルネサスエレクトロニクス株式会社 | 不揮発性半導体記憶装置 |
| US7679130B2 (en) * | 2005-05-10 | 2010-03-16 | Infineon Technologies Ag | Deep trench isolation structures and methods of formation thereof |
| US7236398B1 (en) * | 2005-08-31 | 2007-06-26 | Altera Corporation | Structure of a split-gate memory cell |
| US7495279B2 (en) * | 2005-09-09 | 2009-02-24 | Infineon Technologies Ag | Embedded flash memory devices on SOI substrates and methods of manufacture thereof |
| EP1837917A1 (de) * | 2006-03-21 | 2007-09-26 | Semiconductor Energy Laboratory Co., Ltd. | Nichtflüchtige Halbleiterspeichervorrichtung |
| TWI416738B (zh) * | 2006-03-21 | 2013-11-21 | Semiconductor Energy Lab | 非揮發性半導體記憶體裝置 |
| US8022460B2 (en) * | 2006-03-31 | 2011-09-20 | Semiconductor Energy Laboratory Co., Ltd. | Nonvolatile semiconductor memory device |
| US7554854B2 (en) * | 2006-03-31 | 2009-06-30 | Semiconductor Energy Laboratory Co., Ltd. | Method for deleting data from NAND type nonvolatile memory |
| CN101170064B (zh) * | 2006-10-23 | 2010-05-12 | 上海华虹Nec电子有限公司 | 闪存工艺高压栅氧和隧穿氧化层形成方法 |
| JP2008108977A (ja) * | 2006-10-26 | 2008-05-08 | Renesas Technology Corp | 不揮発性半導体記憶装置およびその製造方法 |
| JP2008118040A (ja) * | 2006-11-07 | 2008-05-22 | Sharp Corp | 不揮発性半導体記憶装置及びその製造方法とこれを用いた情報の書き込み方法 |
| US20080112231A1 (en) * | 2006-11-09 | 2008-05-15 | Danny Pak-Chum Shum | Semiconductor devices and methods of manufacture thereof |
| EP2109136A1 (de) * | 2007-01-29 | 2009-10-14 | Rohm Co., Ltd. | Flotoxähnliches eeprom |
| US7652329B2 (en) * | 2007-07-13 | 2010-01-26 | Semiconductor Components Industries, Llc | Vertical MOS transistor and method therefor |
| US8067287B2 (en) * | 2008-02-25 | 2011-11-29 | Infineon Technologies Ag | Asymmetric segmented channel transistors |
| US8295087B2 (en) * | 2008-06-16 | 2012-10-23 | Aplus Flash Technology, Inc. | Row-decoder and select gate decoder structures suitable for flashed-based EEPROM operating below +/− 10v BVDS |
| JP5169773B2 (ja) * | 2008-11-27 | 2013-03-27 | 富士通セミコンダクター株式会社 | 半導体メモリ、半導体メモリの動作方法およびシステム |
| CN102088000B (zh) * | 2009-12-04 | 2013-03-27 | 中芯国际集成电路制造(上海)有限公司 | Eeprom的存储单元及其制造方法 |
| US9070652B2 (en) * | 2012-04-13 | 2015-06-30 | United Microelectronics Corp. | Test structure for semiconductor process and method for monitoring semiconductor process |
| FR3029343B1 (fr) | 2014-11-27 | 2018-03-30 | Stmicroelectronics (Rousset) Sas | Dispositif compact de memoire de type electriquement effacable et programmable |
| CN104716203B (zh) * | 2015-03-23 | 2017-11-10 | 上海华力微电子有限公司 | 一种浮栅闪存器件及其编译方法 |
| CN106298677B (zh) * | 2015-06-12 | 2019-05-28 | 中芯国际集成电路制造(上海)有限公司 | 半导体存储器及其制造方法 |
| US9842845B1 (en) * | 2016-10-28 | 2017-12-12 | Globalfoundries Inc. | Method of forming a semiconductor device structure and semiconductor device structure |
| CN108806751B (zh) * | 2017-04-26 | 2021-04-09 | 中芯国际集成电路制造(上海)有限公司 | 多次可程式闪存单元阵列及其操作方法、存储器件 |
| FR3071355B1 (fr) | 2017-09-20 | 2019-08-30 | Stmicroelectronics (Rousset) Sas | Cellule-memoire eeprom compacte |
Family Cites Families (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4302766A (en) * | 1979-01-05 | 1981-11-24 | Texas Instruments Incorporated | Self-limiting erasable memory cell with triple level polysilicon |
| DE3037744A1 (de) * | 1980-10-06 | 1982-05-19 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen einer monolithisch integrierten zwei-transistor-speicherzelle in mos-technik |
| US4639893A (en) * | 1984-05-15 | 1987-01-27 | Wafer Scale Integration, Inc. | Self-aligned split gate EPROM |
| IT1201834B (it) * | 1986-07-10 | 1989-02-02 | Sgs Microelettronica Spa | Dispositivo di memoria non volatile a semiconduttore |
| JPH0777078B2 (ja) * | 1987-01-31 | 1995-08-16 | 株式会社東芝 | 不揮発性半導体メモリ |
| JPS6418270A (en) * | 1987-07-13 | 1989-01-23 | Oki Electric Ind Co Ltd | Semiconductor memory device |
| JPH07120719B2 (ja) * | 1987-12-02 | 1995-12-20 | 三菱電機株式会社 | 半導体記憶装置 |
| JPH01248670A (ja) * | 1988-03-30 | 1989-10-04 | Toshiba Corp | 不揮発性半導体記憶装置ならびにその動作方法および製造方法 |
| US5081054A (en) * | 1989-04-03 | 1992-01-14 | Atmel Corporation | Fabrication process for programmable and erasable MOS memory device |
| US5104819A (en) * | 1989-08-07 | 1992-04-14 | Intel Corporation | Fabrication of interpoly dielctric for EPROM-related technologies |
| US5045488A (en) * | 1990-01-22 | 1991-09-03 | Silicon Storage Technology, Inc. | Method of manufacturing a single transistor non-volatile, electrically alterable semiconductor memory device |
| US5049515A (en) * | 1990-03-09 | 1991-09-17 | Intel Corporation, Inc. | Method of making a three-dimensional memory cell with integral select transistor |
| US5021848A (en) * | 1990-03-13 | 1991-06-04 | Chiu Te Long | Electrically-erasable and electrically-programmable memory storage devices with self aligned tunnel dielectric area and the method of fabricating thereof |
| US5280446A (en) * | 1990-09-20 | 1994-01-18 | Bright Microelectronics, Inc. | Flash eprom memory circuit having source side programming |
| JP2830447B2 (ja) * | 1990-10-15 | 1998-12-02 | 日本電気株式会社 | 半導体不揮発性記憶装置 |
| FR2677481B1 (fr) * | 1991-06-07 | 1993-08-20 | Commissariat Energie Atomique | Procede de fabrication d'une cellule de memoire non volatile et cellule de memoire obtenue. |
| US5216268A (en) * | 1991-09-23 | 1993-06-01 | Integrated Silicon Solution, Inc. | Full-featured EEPROM |
| US5395779A (en) * | 1994-04-08 | 1995-03-07 | United Microelectronics Corporation | Process of manufacture of split gate EPROM device |
-
1994
- 1994-04-11 US US08/225,868 patent/US5471422A/en not_active Expired - Lifetime
-
1995
- 1995-02-20 TW TW084101543A patent/TW262593B/zh not_active IP Right Cessation
- 1995-03-16 KR KR1019950005408A patent/KR100198911B1/ko not_active IP Right Cessation
- 1995-03-24 JP JP9013495A patent/JP3055426B2/ja not_active Expired - Lifetime
- 1995-03-31 CN CN95103807A patent/CN1038080C/zh not_active Expired - Fee Related
- 1995-04-06 DE DE69527388T patent/DE69527388T2/de not_active Expired - Lifetime
- 1995-04-06 EP EP95105170A patent/EP0676811B1/de not_active Expired - Lifetime
- 1995-05-30 US US08/471,619 patent/US5646060A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| KR100198911B1 (ko) | 1999-06-15 |
| JP3055426B2 (ja) | 2000-06-26 |
| EP0676811A1 (de) | 1995-10-11 |
| US5646060A (en) | 1997-07-08 |
| CN1038080C (zh) | 1998-04-15 |
| TW262593B (de) | 1995-11-11 |
| US5471422A (en) | 1995-11-28 |
| JPH07297304A (ja) | 1995-11-10 |
| CN1115911A (zh) | 1996-01-31 |
| DE69527388D1 (de) | 2002-08-22 |
| EP0676811B1 (de) | 2002-07-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: FREESCALE SEMICONDUCTOR, INC., AUSTIN, TEX., US |