DE69532907D1 - Halbleitervorrichtung und Verfahren zu ihrer Herstellung - Google Patents

Halbleitervorrichtung und Verfahren zu ihrer Herstellung

Info

Publication number
DE69532907D1
DE69532907D1 DE69532907T DE69532907T DE69532907D1 DE 69532907 D1 DE69532907 D1 DE 69532907D1 DE 69532907 T DE69532907 T DE 69532907T DE 69532907 T DE69532907 T DE 69532907T DE 69532907 D1 DE69532907 D1 DE 69532907D1
Authority
DE
Germany
Prior art keywords
manufacture
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69532907T
Other languages
English (en)
Other versions
DE69532907T2 (de
Inventor
Tokuhiko Tamaki
Tatsuo Sugiyama
Hiroaki Nakaoka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP14200595A external-priority patent/JP3393956B2/ja
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Application granted granted Critical
Publication of DE69532907D1 publication Critical patent/DE69532907D1/de
Publication of DE69532907T2 publication Critical patent/DE69532907T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
    • H01L21/82385—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes gate conductors with different shapes, lengths or dimensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823885—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of vertical transistor structures, i.e. with channel vertical to the substrate surface
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H01L27/0922—Combination of complementary transistors having a different structure, e.g. stacked CMOS, high-voltage and low-voltage CMOS
DE69532907T 1994-08-25 1995-08-25 Halbleitervorrichtung und Verfahren zu ihrer Herstellung Expired - Fee Related DE69532907T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP20065694 1994-08-25
JP20065694 1994-08-25
JP14200595 1995-06-08
JP14200595A JP3393956B2 (ja) 1995-06-08 1995-06-08 縦型電界効果トランジスタ及びその製造方法、並びに相補型の縦型電界効果トランジスタ

Publications (2)

Publication Number Publication Date
DE69532907D1 true DE69532907D1 (de) 2004-05-27
DE69532907T2 DE69532907T2 (de) 2004-09-02

Family

ID=26474151

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69532907T Expired - Fee Related DE69532907T2 (de) 1994-08-25 1995-08-25 Halbleitervorrichtung und Verfahren zu ihrer Herstellung

Country Status (4)

Country Link
US (3) US5670810A (de)
EP (1) EP0700093B1 (de)
KR (1) KR100193102B1 (de)
DE (1) DE69532907T2 (de)

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KR100193102B1 (ko) * 1994-08-25 1999-06-15 무명씨 반도체 장치 및 그 제조방법
US6642574B2 (en) 1997-10-07 2003-11-04 Hitachi, Ltd. Semiconductor memory device and manufacturing method thereof
US6169308B1 (en) 1996-11-15 2001-01-02 Hitachi, Ltd. Semiconductor memory device and manufacturing method thereof
EP0892440A1 (de) 1997-07-18 1999-01-20 Hitachi Europe Limited Bauelement mit kontrollierbarer Leitung
US6060723A (en) 1997-07-18 2000-05-09 Hitachi, Ltd. Controllable conduction device
US6069384A (en) * 1997-03-04 2000-05-30 Advanced Micro Devices, Inc. Integrated circuit including vertical transistors with spacer gates having selected gate widths
US5973352A (en) * 1997-08-20 1999-10-26 Micron Technology, Inc. Ultra high density flash memory having vertically stacked devices
TW423116B (en) * 1997-08-22 2001-02-21 Siemens Ag Circuit-arrangement with at least four transistors and its production method
DE19848828C2 (de) * 1998-10-22 2001-09-13 Infineon Technologies Ag Halbleiterbauelement mit kleiner Durchlaßspannung und hoher Sperrfähigkeit
JP3723410B2 (ja) * 2000-04-13 2005-12-07 三洋電機株式会社 半導体装置とその製造方法
US6437389B1 (en) * 2000-08-22 2002-08-20 Micron Technology, Inc. Vertical gate transistors in pass transistor programmable logic arrays
US6580125B2 (en) 2000-11-21 2003-06-17 Matsushita Electric Industrial Co., Ltd. Semiconductor device and method for fabricating the same
US6531727B2 (en) 2001-02-09 2003-03-11 Micron Technology, Inc. Open bit line DRAM with ultra thin body transistors
US6496034B2 (en) 2001-02-09 2002-12-17 Micron Technology, Inc. Programmable logic arrays with ultra thin body transistors
US6559491B2 (en) 2001-02-09 2003-05-06 Micron Technology, Inc. Folded bit line DRAM with ultra thin body transistors
US6566682B2 (en) 2001-02-09 2003-05-20 Micron Technology, Inc. Programmable memory address and decode circuits with ultra thin vertical body transistors
US6424001B1 (en) * 2001-02-09 2002-07-23 Micron Technology, Inc. Flash memory with ultra thin vertical body transistors
US6649476B2 (en) 2001-02-15 2003-11-18 Micron Technology, Inc. Monotonic dynamic-static pseudo-NMOS logic circuit and method of forming a logic gate array
US6744094B2 (en) * 2001-08-24 2004-06-01 Micron Technology Inc. Floating gate transistor with horizontal gate layers stacked next to vertical body
US6511884B1 (en) 2001-10-09 2003-01-28 Chartered Semiconductor Manufacturing Ltd. Method to form and/or isolate vertical transistors
US6461900B1 (en) * 2001-10-18 2002-10-08 Chartered Semiconductor Manufacturing Ltd. Method to form a self-aligned CMOS inverter using vertical device integration
US7160577B2 (en) 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
JP2003345854A (ja) * 2002-05-23 2003-12-05 Mitsubishi Electric Corp デザインルール作成システム
JP2005064031A (ja) * 2003-08-12 2005-03-10 Fujio Masuoka 半導体装置
US7144820B2 (en) * 2004-01-02 2006-12-05 Infineon Technologies Ag Method of manufacturing a layer sequence and a method of manufacturing an integrated circuit
GB0401578D0 (en) * 2004-01-24 2004-02-25 Koninkl Philips Electronics Nv Phototransistor
US8193612B2 (en) 2004-02-12 2012-06-05 International Rectifier Corporation Complimentary nitride transistors vertical and common drain
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US7432526B2 (en) * 2005-12-20 2008-10-07 Palo Alto Research Center Incorporated Surface-passivated zinc-oxide based sensor
US7859026B2 (en) * 2006-03-16 2010-12-28 Spansion Llc Vertical semiconductor device
CN101369582B (zh) * 2007-08-15 2011-03-30 旺宏电子股份有限公司 垂直式非易失性存储器及其制造方法
JP2010056215A (ja) * 2008-08-27 2010-03-11 Nec Electronics Corp 縦型電界効果トランジスタを備える半導体装置及びその製造方法
SG165252A1 (en) * 2009-03-25 2010-10-28 Unisantis Electronics Jp Ltd Semiconductor device and production method therefor
JP5032532B2 (ja) * 2009-06-05 2012-09-26 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置及びその製造方法
JP5006378B2 (ja) * 2009-08-11 2012-08-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置及びその製造方法
JP5006379B2 (ja) * 2009-09-16 2012-08-22 ユニサンティス エレクトロニクス シンガポール プライベート リミテッド 半導体装置
KR20160004069A (ko) * 2014-07-02 2016-01-12 에스케이하이닉스 주식회사 반도체 장치 및 그 제조 방법
JP6416062B2 (ja) * 2015-09-10 2018-10-31 株式会社東芝 半導体装置
US11908907B2 (en) 2020-12-11 2024-02-20 International Business Machines Corporation VFET contact formation

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US4810906A (en) * 1985-09-25 1989-03-07 Texas Instruments Inc. Vertical inverter circuit
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JPH01225164A (ja) * 1988-03-03 1989-09-08 Fuji Electric Co Ltd 絶縁ゲートｍｏｓｆｅｔの製造方法
JPS63229756A (ja) * 1987-03-18 1988-09-26 Nec Corp 半導体装置の製造方法
JPS63291458A (ja) * 1987-05-23 1988-11-29 Ricoh Co Ltd 縦型ｃｍｏｓトランジスタ
US5016067A (en) * 1988-04-11 1991-05-14 Texas Instruments Incorporated Vertical MOS transistor
JPH0266969A (ja) * 1988-08-31 1990-03-07 Nec Corp 半導体集積回路装置
JPH0360075A (ja) * 1989-07-27 1991-03-15 Seiko Instr Inc 縦型電界効果トランジスタの製造方法
US5073519A (en) * 1990-10-31 1991-12-17 Texas Instruments Incorporated Method of fabricating a vertical FET device with low gate to drain overlap capacitance
JP2991489B2 (ja) * 1990-11-30 1999-12-20 株式会社東芝 半導体装置
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JPH06196707A (ja) * 1992-12-24 1994-07-15 Sony Corp 縦型絶縁ゲート型トランジスタの製法
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Also Published As

Publication number Publication date
KR960009169A (ko) 1996-03-22
KR100193102B1 (ko) 1999-06-15
DE69532907T2 (de) 2004-09-02
US5780898A (en) 1998-07-14
US5670810A (en) 1997-09-23
EP0700093B1 (de) 2004-04-21
EP0700093A1 (de) 1996-03-06
US5696008A (en) 1997-12-09

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee