DE69533385D1 - Herstellungsverfahren von Verbindungen über Halbleitervorrichtungen - Google Patents

Herstellungsverfahren von Verbindungen über Halbleitervorrichtungen

Info

Publication number
DE69533385D1
DE69533385D1 DE69533385T DE69533385T DE69533385D1 DE 69533385 D1 DE69533385 D1 DE 69533385D1 DE 69533385 T DE69533385 T DE 69533385T DE 69533385 T DE69533385 T DE 69533385T DE 69533385 D1 DE69533385 D1 DE 69533385D1
Authority
DE
Germany
Prior art keywords
semiconductor devices
connections via
via semiconductor
manufacturing connections
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69533385T
Other languages
English (en)
Other versions
DE69533385T2 (de
Inventor
Robert H Havemann
Richard A Stoltz
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of DE69533385D1 publication Critical patent/DE69533385D1/de
Publication of DE69533385T2 publication Critical patent/DE69533385T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76831—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers in via holes or trenches, e.g. non-conductive sidewall liners
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76837—Filling up the space between adjacent conductive structures; Gap-filling properties of dielectrics
DE69533385T 1994-06-07 1995-06-07 Herstellungsverfahren von Verbindungen über Halbleitervorrichtungen Expired - Fee Related DE69533385T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US25519894A 1994-06-07 1994-06-07
US255198 1994-06-07

Publications (2)

Publication Number Publication Date
DE69533385D1 true DE69533385D1 (de) 2004-09-23
DE69533385T2 DE69533385T2 (de) 2005-08-25

Family

ID=22967269

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69533385T Expired - Fee Related DE69533385T2 (de) 1994-06-07 1995-06-07 Herstellungsverfahren von Verbindungen über Halbleitervorrichtungen

Country Status (6)

Country Link
US (2) US5789319A (de)
EP (1) EP0687005B1 (de)
JP (1) JPH0855913A (de)
KR (1) KR100373804B1 (de)
DE (1) DE69533385T2 (de)
TW (1) TW295712B (de)

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JP3607424B2 (ja) * 1996-07-12 2005-01-05 株式会社東芝 半導体装置及びその製造方法
JP2910713B2 (ja) * 1996-12-25 1999-06-23 日本電気株式会社 半導体装置の製造方法
JP3159093B2 (ja) 1996-12-25 2001-04-23 日本電気株式会社 半導体装置およびその製造方法
US6303488B1 (en) * 1997-02-12 2001-10-16 Micron Technology, Inc. Semiconductor processing methods of forming openings to devices and substrates, exposing material from which photoresist cannot be substantially selectively removed
US5976979A (en) * 1997-06-10 1999-11-02 Industrial Technology Research Institute Sequential oxygen plasma treatment and chemical mechanical polish (CMP) planarizing method for forming planarized low dielectric constant dielectric layer
US6054379A (en) * 1998-02-11 2000-04-25 Applied Materials, Inc. Method of depositing a low k dielectric with organo silane
US6593247B1 (en) 1998-02-11 2003-07-15 Applied Materials, Inc. Method of depositing low k films using an oxidizing plasma
US6303523B2 (en) 1998-02-11 2001-10-16 Applied Materials, Inc. Plasma processes for depositing low dielectric constant films
US6660656B2 (en) 1998-02-11 2003-12-09 Applied Materials Inc. Plasma processes for depositing low dielectric constant films
US6627532B1 (en) 1998-02-11 2003-09-30 Applied Materials, Inc. Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition
US6287990B1 (en) 1998-02-11 2001-09-11 Applied Materials, Inc. CVD plasma assisted low dielectric constant films
US6413583B1 (en) 1998-02-11 2002-07-02 Applied Materials, Inc. Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound
US6340435B1 (en) * 1998-02-11 2002-01-22 Applied Materials, Inc. Integrated low K dielectrics and etch stops
US6667553B2 (en) 1998-05-29 2003-12-23 Dow Corning Corporation H:SiOC coated substrates
US6159871A (en) 1998-05-29 2000-12-12 Dow Corning Corporation Method for producing hydrogenated silicon oxycarbide films having low dielectric constant
US6800571B2 (en) * 1998-09-29 2004-10-05 Applied Materials Inc. CVD plasma assisted low dielectric constant films
US6495468B2 (en) 1998-12-22 2002-12-17 Micron Technology, Inc. Laser ablative removal of photoresist
US6399489B1 (en) 1999-11-01 2002-06-04 Applied Materials, Inc. Barrier layer deposition using HDP-CVD
US6531398B1 (en) 2000-10-30 2003-03-11 Applied Materials, Inc. Method of depositing organosillicate layers
US6753258B1 (en) 2000-11-03 2004-06-22 Applied Materials Inc. Integration scheme for dual damascene structure
US6709721B2 (en) 2001-03-28 2004-03-23 Applied Materials Inc. Purge heater design and process development for the improvement of low k film properties
US6486082B1 (en) * 2001-06-18 2002-11-26 Applied Materials, Inc. CVD plasma assisted lower dielectric constant sicoh film
JP3575448B2 (ja) * 2001-08-23 2004-10-13 セイコーエプソン株式会社 半導体装置
US6926926B2 (en) * 2001-09-10 2005-08-09 Applied Materials, Inc. Silicon carbide deposited by high density plasma chemical-vapor deposition with bias
US6936309B2 (en) 2002-04-02 2005-08-30 Applied Materials, Inc. Hardness improvement of silicon carboxy films
US20030194496A1 (en) * 2002-04-11 2003-10-16 Applied Materials, Inc. Methods for depositing dielectric material
US20030211244A1 (en) * 2002-04-11 2003-11-13 Applied Materials, Inc. Reacting an organosilicon compound with an oxidizing gas to form an ultra low k dielectric
US20030194495A1 (en) * 2002-04-11 2003-10-16 Applied Materials, Inc. Crosslink cyclo-siloxane compound with linear bridging group to form ultra low k dielectric
US6815373B2 (en) * 2002-04-16 2004-11-09 Applied Materials Inc. Use of cyclic siloxanes for hardness improvement of low k dielectric films
US20030206337A1 (en) * 2002-05-06 2003-11-06 Eastman Kodak Company Exposure apparatus for irradiating a sensitized substrate
US7105460B2 (en) * 2002-07-11 2006-09-12 Applied Materials Nitrogen-free dielectric anti-reflective coating and hardmask
US6927178B2 (en) * 2002-07-11 2005-08-09 Applied Materials, Inc. Nitrogen-free dielectric anti-reflective coating and hardmask
US6897163B2 (en) * 2003-01-31 2005-05-24 Applied Materials, Inc. Method for depositing a low dielectric constant film
US7288205B2 (en) 2004-07-09 2007-10-30 Applied Materials, Inc. Hermetic low dielectric constant layer for barrier applications
JP5326202B2 (ja) * 2006-11-24 2013-10-30 富士通株式会社 半導体装置及びその製造方法
US10073604B2 (en) * 2014-05-15 2018-09-11 Oracle International Corporation UI-driven model extensibility in multi-tier applications
US10103056B2 (en) * 2017-03-08 2018-10-16 Lam Research Corporation Methods for wet metal seed deposition for bottom up gapfill of features

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US4442137A (en) * 1982-03-18 1984-04-10 International Business Machines Corporation Maskless coating of metallurgical features of a dielectric substrate
US4584079A (en) * 1983-10-11 1986-04-22 Honeywell Inc. Step shape tailoring by phase angle variation RF bias sputtering
JPS63179548A (ja) * 1987-01-21 1988-07-23 Mitsubishi Electric Corp 半導体集積回路装置の配線構造
JPH01235254A (ja) * 1988-03-15 1989-09-20 Nec Corp 半導体装置及びその製造方法
US4986878A (en) * 1988-07-19 1991-01-22 Cypress Semiconductor Corp. Process for improved planarization of the passivation layers for semiconductor devices
JPH0289346A (ja) * 1988-09-27 1990-03-29 Toshiba Corp 半導体装置及びその製造方法
JPH0793354B2 (ja) * 1988-11-28 1995-10-09 株式会社東芝 半導体装置の製造方法
US5119164A (en) * 1989-07-25 1992-06-02 Advanced Micro Devices, Inc. Avoiding spin-on-glass cracking in high aspect ratio cavities
US5013691A (en) * 1989-07-31 1991-05-07 At&T Bell Laboratories Anisotropic deposition of silicon dioxide
US5166101A (en) * 1989-09-28 1992-11-24 Applied Materials, Inc. Method for forming a boron phosphorus silicate glass composite layer on a semiconductor wafer
US5077234A (en) * 1990-06-29 1991-12-31 Digital Equipment Corporation Planarization process utilizing three resist layers
JP2500235B2 (ja) * 1991-02-07 1996-05-29 富士通株式会社 薄膜回路基板及びその製造方法
KR950002948B1 (ko) * 1991-10-10 1995-03-28 삼성전자 주식회사 반도체 장치의 금속층간 절연막 형성방법
US5272117A (en) * 1992-12-07 1993-12-21 Motorola, Inc. Method for planarizing a layer of material
US5278103A (en) * 1993-02-26 1994-01-11 Lsi Logic Corporation Method for the controlled formation of voids in doped glass dielectric films
US5356513A (en) * 1993-04-22 1994-10-18 International Business Machines Corporation Polishstop planarization method and structure
US5324683A (en) * 1993-06-02 1994-06-28 Motorola, Inc. Method of forming a semiconductor structure having an air region
EP0689246B1 (de) * 1994-05-27 2003-08-27 Texas Instruments Incorporated Verbesserungen in Bezug auf Halbleitervorrichtungen
US6165335A (en) * 1996-04-25 2000-12-26 Pence And Mcgill University Biosensor device and method

Also Published As

Publication number Publication date
DE69533385T2 (de) 2005-08-25
KR100373804B1 (ko) 2003-03-28
EP0687005B1 (de) 2004-08-18
EP0687005A2 (de) 1995-12-13
JPH0855913A (ja) 1996-02-27
KR960002599A (ko) 1996-01-26
EP0687005A3 (de) 1997-04-16
TW295712B (de) 1997-01-11
US5789319A (en) 1998-08-04
US5786624A (en) 1998-07-28

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee