DE69533967T2 - Vorrichtung, System und Methode zur Aufnahme von Bildern - Google Patents
Vorrichtung, System und Methode zur Aufnahme von Bildern Download PDFInfo
- Publication number
- DE69533967T2 DE69533967T2 DE69533967T DE69533967T DE69533967T2 DE 69533967 T2 DE69533967 T2 DE 69533967T2 DE 69533967 T DE69533967 T DE 69533967T DE 69533967 T DE69533967 T DE 69533967T DE 69533967 T2 DE69533967 T2 DE 69533967T2
- Authority
- DE
- Germany
- Prior art keywords
- pixel
- charge
- values
- imaging
- detected
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000003384 imaging method Methods 0.000 abstract 7
- 230000005855 radiation Effects 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 230000003321 amplification Effects 0.000 abstract 1
- 238000003199 nucleic acid amplification method Methods 0.000 abstract 1
- 238000005457 optimization Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
- G01T1/2914—Measurement of spatial distribution of radiation
- G01T1/2921—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras
- G01T1/2928—Static instruments for imaging the distribution of radioactivity in one or two dimensions; Radio-isotope cameras using solid state detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/247—Detector read-out circuitry
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/29—Measurement performed on radiation beams, e.g. position or section of the beam; Measurement of spatial distribution of radiation
- G01T1/2914—Measurement of spatial distribution of radiation
- G01T1/2964—Scanners
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
- H01L27/14676—X-ray, gamma-ray or corpuscular radiation imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/148—Charge coupled imagers
- H01L27/14831—Area CCD imagers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/48—Increasing resolution by shifting the sensor relative to the scene
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
- H04N25/74—Circuitry for scanning or addressing the pixel array
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
- H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
- H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/32—Transforming X-rays
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N5/00—Details of television systems
- H04N5/30—Transforming light or analogous information into electric information
- H04N5/32—Transforming X-rays
- H04N5/321—Transforming X-rays with video transmission of fluoroscopic images
- H04N5/325—Image enhancement, e.g. by subtraction techniques using polyenergetic X-rays
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9410973A GB2289979A (en) | 1994-06-01 | 1994-06-01 | Imaging devices systems and methods |
GB9421289A GB2289980A (en) | 1994-06-01 | 1994-10-21 | Imaging devices systems and methods |
GB9502419A GB2289981A (en) | 1994-06-01 | 1995-02-08 | Imaging devices systems and methods |
GB9508294A GB2289983B (en) | 1994-06-01 | 1995-04-24 | Imaging devices,systems and methods |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69533967D1 DE69533967D1 (de) | 2005-03-03 |
DE69533967T2 true DE69533967T2 (de) | 2006-06-14 |
Family
ID=27451167
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69533967T Expired - Lifetime DE69533967T2 (de) | 1994-06-01 | 1995-05-29 | Vorrichtung, System und Methode zur Aufnahme von Bildern |
DE69505375T Expired - Lifetime DE69505375T2 (de) | 1994-06-01 | 1995-05-29 | Vorrichtung, system und methoden zur aufnahme von bildern |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69505375T Expired - Lifetime DE69505375T2 (de) | 1994-06-01 | 1995-05-29 | Vorrichtung, system und methoden zur aufnahme von bildern |
Country Status (17)
Country | Link |
---|---|
US (5) | US5812191A (de) |
EP (1) | EP0763302B1 (de) |
JP (1) | JP3897357B2 (de) |
CN (1) | CN1132408C (de) |
AT (2) | ATE288170T1 (de) |
AU (1) | AU691926B2 (de) |
CA (1) | CA2191100C (de) |
DE (2) | DE69533967T2 (de) |
DK (1) | DK0763302T3 (de) |
ES (1) | ES2123991T3 (de) |
FI (1) | FI114841B (de) |
GB (1) | GB2289983B (de) |
HK (1) | HK1014819A1 (de) |
IL (1) | IL113921A (de) |
NO (1) | NO320777B1 (de) |
NZ (1) | NZ287868A (de) |
WO (1) | WO1995033332A2 (de) |
Families Citing this family (187)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2289983B (en) | 1994-06-01 | 1996-10-16 | Simage Oy | Imaging devices,systems and methods |
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GB2371196A (en) * | 2000-12-22 | 2002-07-17 | Simage Oy | High energy radiation scan imaging system |
US7136452B2 (en) | 1995-05-31 | 2006-11-14 | Goldpower Limited | Radiation imaging system, device and method for scan imaging |
JPH0946600A (ja) * | 1995-08-02 | 1997-02-14 | Canon Inc | 撮像装置 |
GB2307785B (en) * | 1995-11-29 | 1998-04-29 | Simage Oy | Forming contacts on semiconductor substrates for radiation detectors and imaging devices |
US6236050B1 (en) * | 1996-02-02 | 2001-05-22 | TüMER TüMAY O. | Method and apparatus for radiation detection |
GB2311198B (en) | 1996-03-14 | 1998-05-06 | Simage Oy | Autoradiography imaging |
GB2318411B (en) * | 1996-10-15 | 1999-03-10 | Simage Oy | Imaging device for imaging radiation |
GB2318448B (en) * | 1996-10-18 | 2002-01-16 | Simage Oy | Imaging detector and method of production |
JP2001518177A (ja) | 1996-11-24 | 2001-10-09 | ジーイー メディカル システムズ イスラエル リミテッド | 固体ガンマ・カメラ |
US6693666B1 (en) * | 1996-12-11 | 2004-02-17 | Interval Research Corporation | Moving imager camera for track and range capture |
US7199410B2 (en) * | 1999-12-14 | 2007-04-03 | Cypress Semiconductor Corporation (Belgium) Bvba | Pixel structure with improved charge transfer |
US6037577A (en) * | 1997-03-11 | 2000-03-14 | Kabushiki Kaisha Toshiba | Amplifying solid-state image pickup device and operating method of the same |
US6215898B1 (en) * | 1997-04-15 | 2001-04-10 | Interval Research Corporation | Data processing system and method |
US6515702B1 (en) * | 1997-07-14 | 2003-02-04 | California Institute Of Technology | Active pixel image sensor with a winner-take-all mode of operation |
US6157016A (en) * | 1997-09-30 | 2000-12-05 | Intel Corporation | Fast CMOS active-pixel sensor array readout circuit with predischarge circuit |
GB2332585B (en) * | 1997-12-18 | 2000-09-27 | Simage Oy | Device for imaging radiation |
GB2332800B (en) * | 1997-12-18 | 2000-09-27 | Simage Oy | Device for imaging radiation |
GB2332608B (en) * | 1997-12-18 | 2000-09-06 | Simage Oy | Modular imaging apparatus |
GB2332562B (en) * | 1997-12-18 | 2000-01-12 | Simage Oy | Hybrid semiconductor imaging device |
US6697108B1 (en) * | 1997-12-31 | 2004-02-24 | Texas Instruments Incorporated | Fast frame readout architecture for array sensors with integrated correlated double sampling system |
IL123006A (en) | 1998-01-20 | 2005-12-18 | Edge Medical Devices Ltd | X-ray imaging system |
JPH11220663A (ja) * | 1998-02-03 | 1999-08-10 | Matsushita Electron Corp | 固体撮像装置およびその駆動方法 |
US6323490B1 (en) * | 1998-03-20 | 2001-11-27 | Kabushiki Kaisha Toshiba | X-ray semiconductor detector |
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JP3847494B2 (ja) * | 1998-12-14 | 2006-11-22 | シャープ株式会社 | 二次元画像検出器の製造方法 |
DE69913475T2 (de) * | 1999-01-05 | 2004-10-14 | Direct Radiography Corp., Newark | Auslesesequenz zum Entfernen eines Restbildes aus einer Strahlungsdetektorplatte |
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1995
- 1995-04-24 GB GB9508294A patent/GB2289983B/en not_active Expired - Lifetime
- 1995-05-29 DK DK95921784T patent/DK0763302T3/da active
- 1995-05-29 ES ES95921784T patent/ES2123991T3/es not_active Expired - Lifetime
- 1995-05-29 DE DE69533967T patent/DE69533967T2/de not_active Expired - Lifetime
- 1995-05-29 AU AU26720/95A patent/AU691926B2/en not_active Ceased
- 1995-05-29 CN CN95194375A patent/CN1132408C/zh not_active Expired - Lifetime
- 1995-05-29 DE DE69505375T patent/DE69505375T2/de not_active Expired - Lifetime
- 1995-05-29 WO PCT/EP1995/002056 patent/WO1995033332A2/en active IP Right Grant
- 1995-05-29 AT AT98200377T patent/ATE288170T1/de not_active IP Right Cessation
- 1995-05-29 CA CA002191100A patent/CA2191100C/en not_active Expired - Lifetime
- 1995-05-29 NZ NZ287868A patent/NZ287868A/en unknown
- 1995-05-29 AT AT95921784T patent/ATE172343T1/de active
- 1995-05-29 JP JP50032296A patent/JP3897357B2/ja not_active Expired - Lifetime
- 1995-05-29 EP EP95921784A patent/EP0763302B1/de not_active Expired - Lifetime
- 1995-05-30 IL IL113921A patent/IL113921A/xx not_active IP Right Cessation
- 1995-05-31 US US08/454,789 patent/US5812191A/en not_active Expired - Lifetime
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1996
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- 1996-11-29 NO NO19965104A patent/NO320777B1/no not_active IP Right Cessation
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1997
- 1997-06-09 US US08/871,199 patent/US6856350B2/en not_active Expired - Lifetime
- 1997-06-09 US US08/871,714 patent/US20020089595A1/en not_active Abandoned
- 1997-06-09 US US08/871,512 patent/US20010002844A1/en not_active Abandoned
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1998
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2003
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