DE69535861D1 - Wafer und sein Herstellungsverfahren - Google Patents

Wafer und sein Herstellungsverfahren

Info

Publication number
DE69535861D1
DE69535861D1 DE69535861T DE69535861T DE69535861D1 DE 69535861 D1 DE69535861 D1 DE 69535861D1 DE 69535861 T DE69535861 T DE 69535861T DE 69535861 T DE69535861 T DE 69535861T DE 69535861 D1 DE69535861 D1 DE 69535861D1
Authority
DE
Germany
Prior art keywords
wafer
manufacturing process
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69535861T
Other languages
English (en)
Inventor
Keiichiro Tanabe
Yuichiro Seki
Akihiko Ikegaya
Naoji Fujimori
Takashi Tsuno
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
Original Assignee
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Electric Industries Ltd filed Critical Sumitomo Electric Industries Ltd
Application granted granted Critical
Publication of DE69535861D1 publication Critical patent/DE69535861D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/02—Elements
    • C30B29/04—Diamond
DE69535861T 1994-06-24 1995-06-20 Wafer und sein Herstellungsverfahren Expired - Lifetime DE69535861D1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16591594 1994-06-24

Publications (1)

Publication Number Publication Date
DE69535861D1 true DE69535861D1 (de) 2008-11-27

Family

ID=15821434

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69535861T Expired - Lifetime DE69535861D1 (de) 1994-06-24 1995-06-20 Wafer und sein Herstellungsverfahren

Country Status (4)

Country Link
US (1) US5964942A (de)
EP (1) EP0689233B1 (de)
KR (1) KR0170536B1 (de)
DE (1) DE69535861D1 (de)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69526129T2 (de) 1994-05-23 2002-08-22 Sumitomo Electric Industries Verfahren und Vorrichtung zum Herstellen eines mit hartem Material bedeckten Halbleiters durch Polieren
DE19615740A1 (de) * 1996-04-20 1997-06-05 Daimler Benz Ag Komposit-Struktur mit einer Diamantschicht und/oder einer diamantähnlichen Schicht sowie Verfahren zur Oberflächenbehandlung der Komposit-Struktur
US6413681B1 (en) * 1997-05-21 2002-07-02 Shin-Etsu Chemical Co., Ltd. Diamond film for x-ray lithography and making method
JP4144047B2 (ja) * 1997-08-20 2008-09-03 株式会社デンソー 半導体基板の製造方法
JP3168961B2 (ja) * 1997-10-06 2001-05-21 住友電気工業株式会社 ダイヤモンド基板及びダイヤモンド基板の評価方法並びにダイヤモンド表面弾性波フィルタ
JPH11145148A (ja) * 1997-11-06 1999-05-28 Tdk Corp 熱プラズマアニール装置およびアニール方法
JPH11140667A (ja) * 1997-11-13 1999-05-25 Dainippon Printing Co Ltd エッチング用基材、エッチング加工方法およびエッチング加工製品
SE520119C2 (sv) * 1998-10-13 2003-05-27 Ericsson Telefon Ab L M Förfarande och anordning för hopkoppling av radiofrekvens-SiC-fälteffekttransistorer för högeffekttillämpningar
US6821571B2 (en) * 1999-06-18 2004-11-23 Applied Materials Inc. Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers
US6589333B1 (en) * 1999-09-17 2003-07-08 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E.V. Method for the manufacture of a substrate, substrate manufactured in accordance with this method, carrier wafer and diamond jewel
WO2001069676A2 (en) 2000-03-13 2001-09-20 Sun Microsystems, Inc. Method and apparatus for bonding substrates
US6506252B2 (en) * 2001-02-07 2003-01-14 Emcore Corporation Susceptorless reactor for growing epitaxial layers on wafers by chemical vapor deposition
JP4068817B2 (ja) * 2001-05-11 2008-03-26 信越化学工業株式会社 ダイヤモンド膜の製造方法及びダイヤモンド膜
US6628535B1 (en) * 2002-03-20 2003-09-30 Formosa Electronic Industries Inc. Voltage converter with selectable DC output voltage level
US10438703B2 (en) * 2004-02-25 2019-10-08 Sunshell Llc Diamond structures as fuel capsules for nuclear fusion
US7309446B1 (en) * 2004-02-25 2007-12-18 Metadigm Llc Methods of manufacturing diamond capsules
JP5002982B2 (ja) * 2005-04-15 2012-08-15 住友電気工業株式会社 単結晶ダイヤモンドの製造方法
DE102005051332B4 (de) * 2005-10-25 2007-08-30 Infineon Technologies Ag Halbleitersubstrat, Halbleiterchip, Halbleiterbauteil und Verfahren zur Herstellung eines Halbleiterbauteils
JP5053553B2 (ja) * 2006-03-08 2012-10-17 信越化学工業株式会社 単結晶ダイヤモンド成長用基材の製造方法
US7495865B2 (en) * 2006-04-10 2009-02-24 Seagate Technology Llc Adhesion layer for protective overcoat
US7435296B1 (en) 2006-04-18 2008-10-14 Chien-Min Sung Diamond bodies grown on SiC substrates and associated methods
US8877610B2 (en) * 2011-06-20 2014-11-04 Infineon Technologies Ag Method of patterning a substrate
US10145013B2 (en) 2014-01-27 2018-12-04 Veeco Instruments Inc. Wafer carrier having retention pockets with compound radii for chemical vapor desposition systems
US10494713B2 (en) * 2015-04-16 2019-12-03 Ii-Vi Incorporated Method of forming an optically-finished thin diamond film, diamond substrate, or diamond window of high aspect ratio
US10584412B2 (en) 2016-03-08 2020-03-10 Ii-Vi Delaware, Inc. Substrate comprising a layer of silicon and a layer of diamond having an optically finished (or a dense) silicon-diamond interface
DE102022205081A1 (de) * 2022-05-20 2023-11-23 Universität Augsburg, Körperschaft des öffentlichen Rechts Verfahren, Substrat, Vorrichtung und deren Verwendung zur Synthese von ebenen einkristallinen Diamanten

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0658891B2 (ja) 1987-03-12 1994-08-03 住友電気工業株式会社 薄膜単結晶ダイヤモンド基板
US4863529A (en) * 1987-03-12 1989-09-05 Sumitomo Electric Industries, Ltd. Thin film single crystal diamond substrate
US4849199A (en) * 1987-03-30 1989-07-18 Crystallume Method for suppressing growth of graphite and other non-diamond carbon species during formation of synthetic diamond
JP2730145B2 (ja) * 1989-03-07 1998-03-25 住友電気工業株式会社 単結晶ダイヤモンド層の形成法
GB8912498D0 (en) * 1989-05-31 1989-07-19 De Beers Ind Diamond Diamond growth
JP2662608B2 (ja) * 1990-09-21 1997-10-15 科学技術庁無機材質研究所長 ダイヤモンド単結晶膜の合成法
US5270077A (en) * 1991-12-13 1993-12-14 General Electric Company Method for producing flat CVD diamond film
JPH05253705A (ja) * 1992-03-10 1993-10-05 Sumitomo Electric Ind Ltd ダイヤモンド切削工具およびその製造方法
JPH06165915A (ja) 1992-11-27 1994-06-14 Nippon Kayaku Co Ltd ハロゲン含有有機物の分解方法及び触媒
JPH06263595A (ja) * 1993-03-10 1994-09-20 Canon Inc ダイヤモンド被覆部材及びその製造方法
US5585176A (en) * 1993-11-30 1996-12-17 Kennametal Inc. Diamond coated tools and wear parts
EP0676485B1 (de) * 1994-04-07 1998-07-08 Sumitomo Electric Industries, Limited Diamantwafer und Verfahren zur Herstellung eines Diamantwafers
DE69526129T2 (de) * 1994-05-23 2002-08-22 Sumitomo Electric Industries Verfahren und Vorrichtung zum Herstellen eines mit hartem Material bedeckten Halbleiters durch Polieren
EP0699776B1 (de) * 1994-06-09 1999-03-31 Sumitomo Electric Industries, Limited Wafer und Verfahren zur Herstellung eines Wafers
JP3728464B2 (ja) * 1994-11-25 2005-12-21 株式会社神戸製鋼所 単結晶ダイヤモンド膜気相合成用基板の製造方法
US5635258A (en) * 1995-04-03 1997-06-03 National Science Council Method of forming a boron-doped diamond film by chemical vapor deposition

Also Published As

Publication number Publication date
EP0689233A2 (de) 1995-12-27
EP0689233B1 (de) 2008-10-15
KR0170536B1 (ko) 1999-03-30
EP0689233A3 (de) 1998-10-21
KR960002530A (ko) 1996-01-26
US5964942A (en) 1999-10-12

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Legal Events

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