DE69601030T2 - Gefiltertes, serielles ereignisgesteuertes befehlstor für "flash" speicher - Google Patents

Gefiltertes, serielles ereignisgesteuertes befehlstor für "flash" speicher

Info

Publication number
DE69601030T2
DE69601030T2 DE69601030T DE69601030T DE69601030T2 DE 69601030 T2 DE69601030 T2 DE 69601030T2 DE 69601030 T DE69601030 T DE 69601030T DE 69601030 T DE69601030 T DE 69601030T DE 69601030 T2 DE69601030 T2 DE 69601030T2
Authority
DE
Germany
Prior art keywords
command
data bus
commands
memory
flash
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69601030T
Other languages
English (en)
Other versions
DE69601030D1 (de
Inventor
Frankie Roohparvar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of DE69601030D1 publication Critical patent/DE69601030D1/de
Publication of DE69601030T2 publication Critical patent/DE69601030T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
DE69601030T 1995-02-10 1996-02-08 Gefiltertes, serielles ereignisgesteuertes befehlstor für "flash" speicher Expired - Lifetime DE69601030T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/386,688 US5682496A (en) 1995-02-10 1995-02-10 Filtered serial event controlled command port for memory
PCT/US1996/001671 WO1996024935A1 (en) 1995-02-10 1996-02-08 Filtered serial event controlled command port for flash memory

Publications (2)

Publication Number Publication Date
DE69601030D1 DE69601030D1 (de) 1999-01-07
DE69601030T2 true DE69601030T2 (de) 1999-04-22

Family

ID=23526629

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69601030T Expired - Lifetime DE69601030T2 (de) 1995-02-10 1996-02-08 Gefiltertes, serielles ereignisgesteuertes befehlstor für "flash" speicher

Country Status (7)

Country Link
US (3) US5682496A (de)
EP (1) EP0808501B1 (de)
JP (1) JP3241386B2 (de)
KR (1) KR100260278B1 (de)
AT (1) ATE173858T1 (de)
DE (1) DE69601030T2 (de)
WO (1) WO1996024935A1 (de)

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US6108237A (en) 1997-07-17 2000-08-22 Micron Technology, Inc. Fast-sensing amplifier for flash memory
US5682496A (en) * 1995-02-10 1997-10-28 Micron Quantum Devices, Inc. Filtered serial event controlled command port for memory
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US5996043A (en) * 1997-06-13 1999-11-30 Micron Technology, Inc. Two step memory device command buffer apparatus and method and memory devices and computer systems using same
US6484244B1 (en) 1997-06-17 2002-11-19 Micron Technology, Inc. Method and system for storing and processing multiple memory commands
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US6202119B1 (en) 1997-12-19 2001-03-13 Micron Technology, Inc. Method and system for processing pipelined memory commands
US6175905B1 (en) 1998-07-30 2001-01-16 Micron Technology, Inc. Method and system for bypassing pipelines in a pipelined memory command generator
US6178488B1 (en) 1998-08-27 2001-01-23 Micron Technology, Inc. Method and apparatus for processing pipelined memory commands
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KR100487031B1 (ko) 1999-08-23 2005-05-03 마이크론 테크놀로지, 인크. 누설 셀의 검출 및 복구를 외부에서 트리거하는 플래시메모리
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EP2109862A4 (de) * 2007-02-16 2010-08-04 Mosaid Technologies Inc Halbleiterbauelement und verfahren zur veringerung des stromverbrauchs in einem system mit verbundenen bauelementen
US20110004703A1 (en) * 2009-07-02 2011-01-06 Nanya Technology Corporation Illegal command handling
GB2548387B (en) * 2016-03-17 2020-04-01 Advanced Risc Mach Ltd An apparatus and method for filtering transactions
KR102242957B1 (ko) * 2019-06-03 2021-04-21 주식회사 원세미콘 고속 낸드 메모리 시스템과 고속 낸드 메모리 패키지 디바이스

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Also Published As

Publication number Publication date
JP3241386B2 (ja) 2001-12-25
US6581146B1 (en) 2003-06-17
ATE173858T1 (de) 1998-12-15
US5682496A (en) 1997-10-28
US6578124B1 (en) 2003-06-10
DE69601030D1 (de) 1999-01-07
JPH10513588A (ja) 1998-12-22
EP0808501B1 (de) 1998-11-25
WO1996024935A1 (en) 1996-08-15
KR19980702131A (ko) 1998-07-15
EP0808501A1 (de) 1997-11-26
KR100260278B1 (ko) 2000-07-01

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Legal Events

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