DE69603338D1 - Oberflächenemittierende Laser mit vertikalem Resonator - Google Patents
Oberflächenemittierende Laser mit vertikalem ResonatorInfo
- Publication number
- DE69603338D1 DE69603338D1 DE69603338T DE69603338T DE69603338D1 DE 69603338 D1 DE69603338 D1 DE 69603338D1 DE 69603338 T DE69603338 T DE 69603338T DE 69603338 T DE69603338 T DE 69603338T DE 69603338 D1 DE69603338 D1 DE 69603338D1
- Authority
- DE
- Germany
- Prior art keywords
- emitting lasers
- vertical resonator
- resonator
- vertical
- lasers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18355—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a defined polarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18338—Non-circular shape of the structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18386—Details of the emission surface for influencing the near- or far-field, e.g. a grating on the surface
- H01S5/18394—Apertures, e.g. defined by the shape of the upper electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3095—Tunnel junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/551,302 US5727014A (en) | 1995-10-31 | 1995-10-31 | Vertical-cavity surface-emitting laser generating light with a defined direction of polarization |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69603338D1 true DE69603338D1 (de) | 1999-08-26 |
DE69603338T2 DE69603338T2 (de) | 1999-11-18 |
Family
ID=24200711
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69603338T Expired - Fee Related DE69603338T2 (de) | 1995-10-31 | 1996-10-16 | Oberflächenemittierende Laser mit vertikalem Resonator |
Country Status (4)
Country | Link |
---|---|
US (1) | US5727014A (de) |
EP (1) | EP0772269B1 (de) |
JP (1) | JPH09172218A (de) |
DE (1) | DE69603338T2 (de) |
Families Citing this family (66)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5719891A (en) * | 1995-12-18 | 1998-02-17 | Picolight Incorporated | Conductive element with lateral oxidation barrier |
US6310707B1 (en) * | 1996-10-25 | 2001-10-30 | Seiko Epson Corporation | Optical wireless data communication system, and transmitter and receiver used therefor |
US6304588B1 (en) * | 1997-02-07 | 2001-10-16 | Xerox Corporation | Method and structure for eliminating polarization instability in laterally-oxidized VCSELs |
GB9709949D0 (en) | 1997-05-17 | 1997-07-09 | Dowd Philip | Vertical-cavity surface-emitting laser polarisation control |
US5936266A (en) * | 1997-07-22 | 1999-08-10 | The Board Of Trustees Of The University Of Illinois | Semiconductor devices and methods with tunnel contact hole sources |
AU747260B2 (en) | 1997-07-25 | 2002-05-09 | Nichia Chemical Industries, Ltd. | Nitride semiconductor device |
US5995531A (en) * | 1997-11-04 | 1999-11-30 | Motorola, Inc. | VCSEL having polarization control and method of making same |
JP3770014B2 (ja) | 1999-02-09 | 2006-04-26 | 日亜化学工業株式会社 | 窒化物半導体素子 |
EP1168539B1 (de) | 1999-03-04 | 2009-12-16 | Nichia Corporation | Nitridhalbleiterlaserelement |
JP2001189526A (ja) * | 2000-01-05 | 2001-07-10 | Nippon Sheet Glass Co Ltd | 自己走査型面発光レーザアレイ |
US6963598B1 (en) | 2000-05-23 | 2005-11-08 | Finisar Corporation | System and method for VCSEL polarization control |
US7065124B2 (en) * | 2000-11-28 | 2006-06-20 | Finlsar Corporation | Electron affinity engineered VCSELs |
US6990135B2 (en) * | 2002-10-28 | 2006-01-24 | Finisar Corporation | Distributed bragg reflector for optoelectronic device |
US6905900B1 (en) * | 2000-11-28 | 2005-06-14 | Finisar Corporation | Versatile method and system for single mode VCSELs |
US6836501B2 (en) * | 2000-12-29 | 2004-12-28 | Finisar Corporation | Resonant reflector for increased wavelength and polarization control |
TWI227799B (en) * | 2000-12-29 | 2005-02-11 | Honeywell Int Inc | Resonant reflector for increased wavelength and polarization control |
US6865208B1 (en) * | 2002-06-10 | 2005-03-08 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Ultrafast laser beam switching and pulse train generation by using coupled vertical-cavity, surface-emitting lasers (VCSELS) |
US6965626B2 (en) * | 2002-09-03 | 2005-11-15 | Finisar Corporation | Single mode VCSEL |
AU2003282827A1 (en) * | 2002-10-11 | 2004-05-04 | Ziva Corporation | Current-controlled polarization switching vertical cavity surface emitting laser |
US6813293B2 (en) * | 2002-11-21 | 2004-11-02 | Finisar Corporation | Long wavelength VCSEL with tunnel junction, and implant |
US6947459B2 (en) * | 2002-11-25 | 2005-09-20 | Eastman Kodak Company | Organic vertical cavity laser and imaging system |
US20040222363A1 (en) * | 2003-05-07 | 2004-11-11 | Honeywell International Inc. | Connectorized optical component misalignment detection system |
US20040247250A1 (en) * | 2003-06-03 | 2004-12-09 | Honeywell International Inc. | Integrated sleeve pluggable package |
US7298942B2 (en) | 2003-06-06 | 2007-11-20 | Finisar Corporation | Pluggable optical optic system having a lens fiber stop |
US7433381B2 (en) | 2003-06-25 | 2008-10-07 | Finisar Corporation | InP based long wavelength VCSEL |
US7075962B2 (en) * | 2003-06-27 | 2006-07-11 | Finisar Corporation | VCSEL having thermal management |
US7277461B2 (en) * | 2003-06-27 | 2007-10-02 | Finisar Corporation | Dielectric VCSEL gain guide |
US7054345B2 (en) | 2003-06-27 | 2006-05-30 | Finisar Corporation | Enhanced lateral oxidation |
US7149383B2 (en) * | 2003-06-30 | 2006-12-12 | Finisar Corporation | Optical system with reduced back reflection |
US6961489B2 (en) * | 2003-06-30 | 2005-11-01 | Finisar Corporation | High speed optical system |
US20060056762A1 (en) * | 2003-07-02 | 2006-03-16 | Honeywell International Inc. | Lens optical coupler |
US20050013542A1 (en) * | 2003-07-16 | 2005-01-20 | Honeywell International Inc. | Coupler having reduction of reflections to light source |
US7210857B2 (en) * | 2003-07-16 | 2007-05-01 | Finisar Corporation | Optical coupling system |
US20050013539A1 (en) * | 2003-07-17 | 2005-01-20 | Honeywell International Inc. | Optical coupling system |
US6887801B2 (en) * | 2003-07-18 | 2005-05-03 | Finisar Corporation | Edge bead control method and apparatus |
US7257141B2 (en) * | 2003-07-23 | 2007-08-14 | Palo Alto Research Center Incorporated | Phase array oxide-confined VCSELs |
JP4058635B2 (ja) * | 2003-09-18 | 2008-03-12 | セイコーエプソン株式会社 | 面発光型半導体レーザおよびその製造方法 |
US7292614B2 (en) * | 2003-09-23 | 2007-11-06 | Eastman Kodak Company | Organic laser and liquid crystal display |
US7031363B2 (en) * | 2003-10-29 | 2006-04-18 | Finisar Corporation | Long wavelength VCSEL device processing |
JP4728584B2 (ja) * | 2004-03-08 | 2011-07-20 | 株式会社リコー | 光走査装置、画像形成装置及びカラー画像形成装置 |
TW200603401A (en) * | 2004-04-07 | 2006-01-16 | Nl Nanosemiconductor Gmbh | Optoelectronic device based on an antiwaveguiding cavity |
US7372886B2 (en) * | 2004-06-07 | 2008-05-13 | Avago Technologies Fiber Ip Pte Ltd | High thermal conductivity vertical cavity surface emitting laser (VCSEL) |
JP4752201B2 (ja) * | 2004-06-29 | 2011-08-17 | 富士ゼロックス株式会社 | 面発光型半導体レーザ装置およびその製造方法 |
US7596165B2 (en) * | 2004-08-31 | 2009-09-29 | Finisar Corporation | Distributed Bragg Reflector for optoelectronic device |
US7829912B2 (en) * | 2006-07-31 | 2010-11-09 | Finisar Corporation | Efficient carrier injection in a semiconductor device |
US7920612B2 (en) * | 2004-08-31 | 2011-04-05 | Finisar Corporation | Light emitting semiconductor device having an electrical confinement barrier near the active region |
JP4680604B2 (ja) * | 2005-01-05 | 2011-05-11 | 株式会社リコー | 光走査装置および画像形成装置 |
JP4530922B2 (ja) * | 2005-06-20 | 2010-08-25 | 株式会社リコー | 光走査装置および画像形成装置 |
JP2007173514A (ja) * | 2005-12-22 | 2007-07-05 | Fuji Xerox Co Ltd | 大口径表面発光型半導体レーザ素子を用いた光情報処理装置 |
US7535034B2 (en) | 2006-02-27 | 2009-05-19 | The Board Of Trustees Of The University Of Illinois | PNP light emitting transistor and method |
JP5309485B2 (ja) * | 2006-08-30 | 2013-10-09 | 株式会社リコー | 面発光レーザ、面発光レーザアレイ、光走査装置及び画像形成装置 |
KR20080065478A (ko) * | 2007-01-09 | 2008-07-14 | 삼성전자주식회사 | 멀티 표면광 레이저와 이를 이용한 광통신 시스템 |
US8031752B1 (en) | 2007-04-16 | 2011-10-04 | Finisar Corporation | VCSEL optimized for high speed data |
TWI362769B (en) * | 2008-05-09 | 2012-04-21 | Univ Nat Chiao Tung | Light emitting device and fabrication method therefor |
JP5316783B2 (ja) * | 2008-05-15 | 2013-10-16 | 株式会社リコー | 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置 |
JP2009295792A (ja) * | 2008-06-05 | 2009-12-17 | Ricoh Co Ltd | 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置 |
JP5316784B2 (ja) | 2008-06-11 | 2013-10-16 | 株式会社リコー | 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置 |
JP5261754B2 (ja) | 2008-11-27 | 2013-08-14 | 株式会社リコー | 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置 |
JP5381526B2 (ja) * | 2009-09-08 | 2014-01-08 | 富士ゼロックス株式会社 | 面発光型半導体レーザ、面発光型半導体レーザ装置、光伝送装置および情報処理装置 |
JP5950523B2 (ja) * | 2010-10-16 | 2016-07-13 | キヤノン株式会社 | 面発光レーザ、面発光レーザアレイ、画像形成装置 |
KR102081605B1 (ko) * | 2013-07-31 | 2020-02-27 | 엘지디스플레이 주식회사 | 백색 유기전계발광소자 |
JP5911003B2 (ja) * | 2014-10-09 | 2016-04-27 | 株式会社リコー | 面発光レーザ素子、面発光レーザアレイ、光走査装置及び画像形成装置 |
US11522344B2 (en) * | 2018-03-28 | 2022-12-06 | Lumentum Operations Llc | Optimizing a layout of an emitter array |
US10720758B2 (en) | 2018-03-28 | 2020-07-21 | Lumentum Operations Llc | Emitter array with shared via to an ohmic metal shared between adjacent emitters |
US10985531B2 (en) * | 2019-01-27 | 2021-04-20 | Hewlett Packard Enterprise Development Lp | Intensity noise mitigation for vertical-cavity surface emitting lasers |
DE102022115935A1 (de) | 2022-06-27 | 2023-12-28 | Trumpf Photonic Components Gmbh | Laservorrichtung |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB709939A (en) * | 1951-07-14 | 1954-06-02 | Emi Ltd | Deflecting circuit arrangements for cathode ray tubes |
US4474422A (en) * | 1979-11-13 | 1984-10-02 | Canon Kabushiki Kaisha | Optical scanning apparatus having an array of light sources |
DE69233409T2 (de) * | 1991-05-14 | 2005-03-03 | Seiko Epson Corp. | Bilderzeugungsgerät |
US5331654A (en) * | 1993-03-05 | 1994-07-19 | Photonics Research Incorporated | Polarized surface-emitting laser |
US5416044A (en) * | 1993-03-12 | 1995-05-16 | Matsushita Electric Industrial Co., Ltd. | Method for producing a surface-emitting laser |
US5412680A (en) * | 1994-03-18 | 1995-05-02 | Photonics Research Incorporated | Linear polarization of semiconductor laser |
US5892784A (en) * | 1994-10-27 | 1999-04-06 | Hewlett-Packard Company | N-drive p-common surface emitting laser fabricated on n+ substrate |
-
1995
- 1995-10-31 US US08/551,302 patent/US5727014A/en not_active Expired - Lifetime
-
1996
- 1996-10-16 DE DE69603338T patent/DE69603338T2/de not_active Expired - Fee Related
- 1996-10-16 EP EP96307520A patent/EP0772269B1/de not_active Expired - Lifetime
- 1996-10-30 JP JP8288449A patent/JPH09172218A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
DE69603338T2 (de) | 1999-11-18 |
EP0772269B1 (de) | 1999-07-21 |
EP0772269A1 (de) | 1997-05-07 |
JPH09172218A (ja) | 1997-06-30 |
US5727014A (en) | 1998-03-10 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8327 | Change in the person/name/address of the patent owner |
Owner name: AGILENT TECHNOLOGIES, INC. (N.D.GES.D.STAATES DELA |
|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: AVAGO TECHNOLOGIES FIBER IP (SINGAPORE) PTE. LTD., |
|
8328 | Change in the person/name/address of the agent |
Representative=s name: DILG HAEUSLER SCHINDELMANN PATENTANWALTSGESELLSCHA |
|
8339 | Ceased/non-payment of the annual fee |