DE69613186D1 - Programmierungsverfahren für einen amg eprom speicher oder einen flash speicher wenn jede speicherzelle dazu geschaffen ist mehrere datenbits zu speichern - Google Patents

Programmierungsverfahren für einen amg eprom speicher oder einen flash speicher wenn jede speicherzelle dazu geschaffen ist mehrere datenbits zu speichern

Info

Publication number
DE69613186D1
DE69613186D1 DE69613186T DE69613186T DE69613186D1 DE 69613186 D1 DE69613186 D1 DE 69613186D1 DE 69613186 T DE69613186 T DE 69613186T DE 69613186 T DE69613186 T DE 69613186T DE 69613186 D1 DE69613186 D1 DE 69613186D1
Authority
DE
Germany
Prior art keywords
storage
successful
data bits
multiple data
programming procedure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69613186T
Other languages
English (en)
Other versions
DE69613186T2 (de
Inventor
Albert Bergemont
Min-Hwa Chi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Semiconductor Corp
Original Assignee
National Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Semiconductor Corp filed Critical National Semiconductor Corp
Publication of DE69613186D1 publication Critical patent/DE69613186D1/de
Application granted granted Critical
Publication of DE69613186T2 publication Critical patent/DE69613186T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0491—Virtual ground arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G11C11/5635—Erasing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/562—Multilevel memory programming aspects
    • G11C2211/5622—Concurrent multilevel programming of more than one cell
DE69613186T 1995-04-06 1996-04-08 Programmierungsverfahren für einen amg eprom speicher oder einen flash speicher wenn jede speicherzelle dazu geschaffen ist mehrere datenbits zu speichern Expired - Lifetime DE69613186T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/417,938 US5557567A (en) 1995-04-06 1995-04-06 Method for programming an AMG EPROM or flash memory when cells of the array are formed to store multiple bits of data
PCT/US1996/004843 WO1996031883A1 (en) 1995-04-06 1996-04-08 A method for programming an amg eprom or flash memory when cells of the array are formed to store multiple bits of data

Publications (2)

Publication Number Publication Date
DE69613186D1 true DE69613186D1 (de) 2001-07-12
DE69613186T2 DE69613186T2 (de) 2002-01-31

Family

ID=23655977

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69613186T Expired - Lifetime DE69613186T2 (de) 1995-04-06 1996-04-08 Programmierungsverfahren für einen amg eprom speicher oder einen flash speicher wenn jede speicherzelle dazu geschaffen ist mehrere datenbits zu speichern

Country Status (5)

Country Link
US (1) US5557567A (de)
EP (1) EP0764329B1 (de)
KR (1) KR100365167B1 (de)
DE (1) DE69613186T2 (de)
WO (1) WO1996031883A1 (de)

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US5808937A (en) * 1994-12-16 1998-09-15 National Semiconductor Corporation Self-convergent method for programming FLASH and EEPROM memory cells that moves the threshold voltage from an erased threshold voltage range to one of a plurality of programmed threshold voltage ranges
US5677869A (en) * 1995-12-14 1997-10-14 Intel Corporation Programming flash memory using strict ordering of states
US5737265A (en) * 1995-12-14 1998-04-07 Intel Corporation Programming flash memory using data stream analysis
US5729489A (en) * 1995-12-14 1998-03-17 Intel Corporation Programming flash memory using predictive learning methods
US5701266A (en) * 1995-12-14 1997-12-23 Intel Corporation Programming flash memory using distributed learning methods
US6072719A (en) * 1996-04-19 2000-06-06 Kabushiki Kaisha Toshiba Semiconductor memory device
US5908311A (en) * 1996-07-25 1999-06-01 National Semiconductor Corporation Method for forming a mixed-signal CMOS circuit that includes non-volatile memory cells
KR100205240B1 (ko) * 1996-09-13 1999-07-01 윤종용 단일 비트 및 다중 비트 셀들이 장착된 불휘발성 반도체 메모리 장치
US5926730A (en) * 1997-02-19 1999-07-20 Micron Technology, Inc. Conductor layer nitridation
US6157574A (en) * 1998-04-01 2000-12-05 National Semiconductor Corporation Erasable frohmann-bentchkowsky memory transistor that stores multiple bits of data
US6118691A (en) * 1998-04-01 2000-09-12 National Semiconductor Corporation Memory cell with a Frohmann-Bentchkowsky EPROM memory transistor that reduces the voltage across an unprogrammed memory transistor during a read
US6081451A (en) * 1998-04-01 2000-06-27 National Semiconductor Corporation Memory device that utilizes single-poly EPROM cells with CMOS compatible programming voltages
US6141246A (en) * 1998-04-01 2000-10-31 National Semiconductor Corporation Memory device with sense amplifier that sets the voltage drop across the cells of the device
US6055185A (en) 1998-04-01 2000-04-25 National Semiconductor Corporation Single-poly EPROM cell with CMOS compatible programming voltages
US5982669A (en) * 1998-11-04 1999-11-09 National Semiconductor Corporation EPROM and flash memory cells with source-side injection
US6190968B1 (en) 1998-11-04 2001-02-20 National Semiconductor Corporation Method for forming EPROM and flash memory cells with source-side injection
JP3410036B2 (ja) * 1999-02-03 2003-05-26 シャープ株式会社 不揮発性半導体記憶装置への情報の書き込み方法
US6738289B2 (en) * 2001-02-26 2004-05-18 Sandisk Corporation Non-volatile memory with improved programming and method therefor
US6522584B1 (en) * 2001-08-02 2003-02-18 Micron Technology, Inc. Programming methods for multi-level flash EEPROMs
US7038248B2 (en) * 2002-02-15 2006-05-02 Sandisk Corporation Diverse band gap energy level semiconductor device
WO2006082599A2 (en) * 2005-02-01 2006-08-10 Ravikiran Sureshbabu Pasupulet A method and system for power management
US20140015031A1 (en) * 2012-07-12 2014-01-16 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and Method for Memory Device
KR20220113451A (ko) * 2020-01-28 2022-08-12 마이크론 테크놀로지, 인크. 메모리 디바이스를 이용한 아날로그 저장

Family Cites Families (18)

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Publication number Priority date Publication date Assignee Title
US4181980A (en) * 1978-05-15 1980-01-01 Electronic Arrays, Inc. Acquisition and storage of analog signals
DE2828855C2 (de) * 1978-06-30 1982-11-18 Siemens AG, 1000 Berlin und 8000 München Wortweise elektrisch umprogrammierbarer, nichtflüchtiger Speicher sowie Verfahren zum Löschen bzw. Einschreiben eines bzw. in einen solchen Speicher(s)
IT1224062B (it) * 1979-09-28 1990-09-26 Ates Componenti Elettron Metodo di programmazione per una memoria a semiconduttore non volatile elettricamente alterabile
JPS59161873A (ja) * 1983-03-07 1984-09-12 Agency Of Ind Science & Technol 半導体不揮発性メモリ
JPS6038881A (ja) * 1983-08-11 1985-02-28 Agency Of Ind Science & Technol 半導体不揮発性メモリ
US4698787A (en) * 1984-11-21 1987-10-06 Exel Microelectronics, Inc. Single transistor electrically programmable memory device and method
JPS63172471A (ja) * 1987-01-12 1988-07-16 Agency Of Ind Science & Technol 不揮発性メモリへの書き込み方法
JPH07120720B2 (ja) * 1987-12-17 1995-12-20 三菱電機株式会社 不揮発性半導体記憶装置
US5268870A (en) * 1988-06-08 1993-12-07 Eliyahou Harari Flash EEPROM system and intelligent programming and erasing methods therefor
US5043940A (en) * 1988-06-08 1991-08-27 Eliyahou Harari Flash EEPROM memory systems having multistate storage cells
US5204835A (en) * 1990-06-13 1993-04-20 Waferscale Integration Inc. Eprom virtual ground array
EP0461904A3 (en) * 1990-06-14 1992-09-09 Creative Integrated Systems, Inc. An improved semiconductor read-only vlsi memory
US5187683A (en) * 1990-08-31 1993-02-16 Texas Instruments Incorporated Method for programming EEPROM memory arrays
US5218569A (en) * 1991-02-08 1993-06-08 Banks Gerald J Electrically alterable non-volatile memory with n-bits per memory cell
US5346842A (en) * 1992-02-04 1994-09-13 National Semiconductor Corporation Method of making alternate metal/source virtual ground flash EPROM cell array
US5418743A (en) * 1992-12-07 1995-05-23 Nippon Steel Corporation Method of writing into non-volatile semiconductor memory
US5493527A (en) * 1993-08-26 1996-02-20 United Micro Electronics Corporation High density ROM with select lines
US5432730A (en) * 1993-12-20 1995-07-11 Waferscale Integration, Inc. Electrically programmable read only memory array

Also Published As

Publication number Publication date
US5557567A (en) 1996-09-17
WO1996031883A1 (en) 1996-10-10
KR970703598A (ko) 1997-07-03
EP0764329A1 (de) 1997-03-26
KR100365167B1 (ko) 2003-03-06
EP0764329B1 (de) 2001-06-06
DE69613186T2 (de) 2002-01-31

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