DE69615390D1 - Verfahren zum reduzieren von defekten in oxiden schichten auf silikonkarbiden - Google Patents

Verfahren zum reduzieren von defekten in oxiden schichten auf silikonkarbiden

Info

Publication number
DE69615390D1
DE69615390D1 DE69615390T DE69615390T DE69615390D1 DE 69615390 D1 DE69615390 D1 DE 69615390D1 DE 69615390 T DE69615390 T DE 69615390T DE 69615390 T DE69615390 T DE 69615390T DE 69615390 D1 DE69615390 D1 DE 69615390D1
Authority
DE
Germany
Prior art keywords
oxide layers
reducing defects
carbides
silicone
silicone carbides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69615390T
Other languages
English (en)
Other versions
DE69615390T2 (de
Inventor
A Lipkin
B Slater
W Palmour
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Wolfspeed Inc
Original Assignee
Cree Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cree Inc filed Critical Cree Inc
Application granted granted Critical
Publication of DE69615390D1 publication Critical patent/DE69615390D1/de
Publication of DE69615390T2 publication Critical patent/DE69615390T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/0445—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising crystalline silicon carbide
    • H01L21/048—Making electrodes
    • H01L21/049—Conductor-insulator-semiconductor electrodes, e.g. MIS contacts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/931—Silicon carbide semiconductor

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Formation Of Insulating Films (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
DE69615390T 1995-11-08 1996-10-28 Verfahren zum reduzieren von defekten in oxiden schichten auf silikonkarbiden Expired - Lifetime DE69615390T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/554,319 US5972801A (en) 1995-11-08 1995-11-08 Process for reducing defects in oxide layers on silicon carbide
PCT/US1996/017344 WO1997017730A1 (en) 1995-11-08 1996-10-28 Process for reducing defects in oxide layers on silicon carbide

Publications (2)

Publication Number Publication Date
DE69615390D1 true DE69615390D1 (de) 2001-10-25
DE69615390T2 DE69615390T2 (de) 2002-06-13

Family

ID=24212909

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69615390T Expired - Lifetime DE69615390T2 (de) 1995-11-08 1996-10-28 Verfahren zum reduzieren von defekten in oxiden schichten auf silikonkarbiden

Country Status (7)

Country Link
US (1) US5972801A (de)
EP (1) EP0860026B1 (de)
JP (1) JP3251017B2 (de)
KR (1) KR100475040B1 (de)
AU (1) AU7665996A (de)
DE (1) DE69615390T2 (de)
WO (1) WO1997017730A1 (de)

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JPH11251592A (ja) * 1998-01-05 1999-09-07 Denso Corp 炭化珪素半導体装置
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US6246076B1 (en) 1998-08-28 2001-06-12 Cree, Inc. Layered dielectric on silicon carbide semiconductor structures
US6972436B2 (en) * 1998-08-28 2005-12-06 Cree, Inc. High voltage, high temperature capacitor and interconnection structures
JP3770014B2 (ja) 1999-02-09 2006-04-26 日亜化学工業株式会社 窒化物半導体素子
WO2000052796A1 (fr) 1999-03-04 2000-09-08 Nichia Corporation Element de laser semiconducteur au nitrure
AU771122B2 (en) * 1999-07-07 2004-03-11 3M Innovative Properties Company Detection article having fluid control film with capillary channels
JP3551909B2 (ja) * 1999-11-18 2004-08-11 株式会社デンソー 炭化珪素半導体装置の製造方法
US6407014B1 (en) * 1999-12-16 2002-06-18 Philips Electronics North America Corporation Method achieving higher inversion layer mobility in novel silicon carbide semiconductor devices
US6303508B1 (en) 1999-12-16 2001-10-16 Philips Electronics North America Corporation Superior silicon carbide integrated circuits and method of fabricating
US6939756B1 (en) * 2000-03-24 2005-09-06 Vanderbilt University Inclusion of nitrogen at the silicon dioxide-silicon carbide interace for passivation of interface defects
US6686616B1 (en) 2000-05-10 2004-02-03 Cree, Inc. Silicon carbide metal-semiconductor field effect transistors
JP3598954B2 (ja) * 2000-08-21 2004-12-08 株式会社村田製作所 電圧非直線抵抗体の製造方法
US6610366B2 (en) 2000-10-03 2003-08-26 Cree, Inc. Method of N2O annealing an oxide layer on a silicon carbide layer
US7067176B2 (en) 2000-10-03 2006-06-27 Cree, Inc. Method of fabricating an oxide layer on a silicon carbide layer utilizing an anneal in a hydrogen environment
US6767843B2 (en) 2000-10-03 2004-07-27 Cree, Inc. Method of N2O growth of an oxide layer on a silicon carbide layer
US6956238B2 (en) 2000-10-03 2005-10-18 Cree, Inc. Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide semiconductor field effect transistors having a shorting channel
CA2421003C (en) * 2000-10-03 2012-06-26 Cree, Inc. Method of fabricating an oxide layer on a silicon carbide layer utilizing n2o
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US6528373B2 (en) 2001-02-12 2003-03-04 Cree, Inc. Layered dielectric on silicon carbide semiconductor structures
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JP2003086792A (ja) * 2001-09-10 2003-03-20 National Institute Of Advanced Industrial & Technology 半導体装置の作製法
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DE60239828D1 (de) * 2001-11-30 2011-06-01 Panasonic Corp Ür
DE10392870B4 (de) * 2002-06-28 2009-07-30 National Institute Of Advanced Industrial Science And Technology Verfahren zur Herstellung einer Halbleitervorrichtung und Halbleitervorrichtung
US7022378B2 (en) * 2002-08-30 2006-04-04 Cree, Inc. Nitrogen passivation of interface states in SiO2/SiC structures
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US7221010B2 (en) * 2002-12-20 2007-05-22 Cree, Inc. Vertical JFET limited silicon carbide power metal-oxide semiconductor field effect transistors
US6979863B2 (en) * 2003-04-24 2005-12-27 Cree, Inc. Silicon carbide MOSFETs with integrated antiparallel junction barrier Schottky free wheeling diodes and methods of fabricating the same
US7074643B2 (en) * 2003-04-24 2006-07-11 Cree, Inc. Silicon carbide power devices with self-aligned source and well regions and methods of fabricating same
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US7709403B2 (en) * 2003-10-09 2010-05-04 Panasonic Corporation Silicon carbide-oxide layered structure, production method thereof, and semiconductor device
US6974720B2 (en) * 2003-10-16 2005-12-13 Cree, Inc. Methods of forming power semiconductor devices using boule-grown silicon carbide drift layers and power semiconductor devices formed thereby
US7118970B2 (en) * 2004-06-22 2006-10-10 Cree, Inc. Methods of fabricating silicon carbide devices with hybrid well regions
US7238224B2 (en) * 2004-10-29 2007-07-03 Hewlett-Packard Development Company, L.P. Fluid-gas separator
US20060091606A1 (en) * 2004-10-28 2006-05-04 Gary Paugh Magnetic building game
US7265399B2 (en) * 2004-10-29 2007-09-04 Cree, Inc. Asymetric layout structures for transistors and methods of fabricating the same
US7348612B2 (en) * 2004-10-29 2008-03-25 Cree, Inc. Metal-semiconductor field effect transistors (MESFETs) having drains coupled to the substrate and methods of fabricating the same
US7326962B2 (en) * 2004-12-15 2008-02-05 Cree, Inc. Transistors having buried N-type and P-type regions beneath the source region and methods of fabricating the same
EP1855312B1 (de) * 2005-02-22 2014-04-09 Hitachi Metals, Ltd. Prozess zur herstellung eines sic-einkristallsubstrats
US20060261346A1 (en) * 2005-05-18 2006-11-23 Sei-Hyung Ryu High voltage silicon carbide devices having bi-directional blocking capabilities and methods of fabricating the same
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US7615801B2 (en) * 2005-05-18 2009-11-10 Cree, Inc. High voltage silicon carbide devices having bi-directional blocking capabilities
US7391057B2 (en) * 2005-05-18 2008-06-24 Cree, Inc. High voltage silicon carbide devices having bi-directional blocking capabilities
US7528040B2 (en) 2005-05-24 2009-05-05 Cree, Inc. Methods of fabricating silicon carbide devices having smooth channels
US20060267043A1 (en) * 2005-05-27 2006-11-30 Emerson David T Deep ultraviolet light emitting devices and methods of fabricating deep ultraviolet light emitting devices
US8203185B2 (en) * 2005-06-21 2012-06-19 Cree, Inc. Semiconductor devices having varying electrode widths to provide non-uniform gate pitches and related methods
US7598576B2 (en) * 2005-06-29 2009-10-06 Cree, Inc. Environmentally robust passivation structures for high-voltage silicon carbide semiconductor devices
US7855401B2 (en) 2005-06-29 2010-12-21 Cree, Inc. Passivation of wide band-gap based semiconductor devices with hydrogen-free sputtered nitrides
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JP2007066944A (ja) * 2005-08-29 2007-03-15 Nissan Motor Co Ltd 炭化珪素半導体装置及びその製造方法
US7727904B2 (en) * 2005-09-16 2010-06-01 Cree, Inc. Methods of forming SiC MOSFETs with high inversion layer mobility
US7402844B2 (en) * 2005-11-29 2008-07-22 Cree, Inc. Metal semiconductor field effect transistors (MESFETS) having channels of varying thicknesses and related methods
US7883949B2 (en) * 2006-06-29 2011-02-08 Cree, Inc Methods of forming silicon carbide switching devices including P-type channels
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US8432012B2 (en) 2006-08-01 2013-04-30 Cree, Inc. Semiconductor devices including schottky diodes having overlapping doped regions and methods of fabricating same
EP2052414B1 (de) * 2006-08-17 2016-03-30 Cree, Inc. Bipolare hochleistungstransistoren mit isoliertem gate
EP2062289B1 (de) * 2006-09-01 2011-10-26 Nxp B.V. Verfahren zur verbesserung der mobilität einer inversionsschicht in einem siliciumcarbid-mosfet
US20080054270A1 (en) * 2006-09-05 2008-03-06 Yoshiyuki Suda Semiconductor memory device and the production method
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JP5283147B2 (ja) * 2006-12-08 2013-09-04 国立大学法人東北大学 半導体装置および半導体装置の製造方法
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JP5728153B2 (ja) * 2008-09-26 2015-06-03 株式会社東芝 半導体装置の製造方法
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Also Published As

Publication number Publication date
EP0860026A1 (de) 1998-08-26
KR19990064143A (ko) 1999-07-26
WO1997017730A1 (en) 1997-05-15
US5972801A (en) 1999-10-26
JPH11505073A (ja) 1999-05-11
AU7665996A (en) 1997-05-29
DE69615390T2 (de) 2002-06-13
KR100475040B1 (ko) 2005-06-20
EP0860026B1 (de) 2001-09-19
JP3251017B2 (ja) 2002-01-28

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