DE69619207T2 - Polierverfahren - Google Patents
PolierverfahrenInfo
- Publication number
- DE69619207T2 DE69619207T2 DE69619207T DE69619207T DE69619207T2 DE 69619207 T2 DE69619207 T2 DE 69619207T2 DE 69619207 T DE69619207 T DE 69619207T DE 69619207 T DE69619207 T DE 69619207T DE 69619207 T2 DE69619207 T2 DE 69619207T2
- Authority
- DE
- Germany
- Prior art keywords
- polishing process
- polishing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000007517 polishing process Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31051—Planarisation of the insulating layers
- H01L21/31053—Planarisation of the insulating layers involving a dielectric removal step
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/32—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers using masks
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/97—Specified etch stop material
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31705495 | 1995-11-13 | ||
JP11057696A JP3230986B2 (ja) | 1995-11-13 | 1996-04-08 | ポリッシング方法、半導体装置の製造方法及び半導体製造装置。 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69619207D1 DE69619207D1 (de) | 2002-03-21 |
DE69619207T2 true DE69619207T2 (de) | 2002-09-19 |
Family
ID=26450182
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69619207T Expired - Lifetime DE69619207T2 (de) | 1995-11-13 | 1996-11-13 | Polierverfahren |
Country Status (7)
Country | Link |
---|---|
US (1) | US6069083A (de) |
EP (1) | EP0777266B1 (de) |
JP (1) | JP3230986B2 (de) |
KR (1) | KR100348097B1 (de) |
CN (1) | CN1083154C (de) |
DE (1) | DE69619207T2 (de) |
TW (1) | TW428225B (de) |
Families Citing this family (28)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6097076A (en) * | 1997-03-25 | 2000-08-01 | Micron Technology, Inc. | Self-aligned isolation trench |
JPH10309660A (ja) * | 1997-05-07 | 1998-11-24 | Tokuyama Corp | 仕上げ研磨剤 |
FR2797603B1 (fr) * | 1997-09-01 | 2004-01-16 | United Microelectronics Corp | Machine et procede de polissage chimio-mecanique et manchon de retenue utilise dans cette machine |
US5948699A (en) * | 1997-11-21 | 1999-09-07 | Sibond, L.L.C. | Wafer backing insert for free mount semiconductor polishing apparatus and process |
TW510917B (en) * | 1998-02-24 | 2002-11-21 | Showa Denko Kk | Abrasive composition for polishing semiconductor device and method for manufacturing semiconductor device using same |
US6124207A (en) * | 1998-08-31 | 2000-09-26 | Micron Technology, Inc. | Slurries for mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies, and methods and apparatuses for making and using such slurries |
US6555466B1 (en) * | 1999-03-29 | 2003-04-29 | Speedfam Corporation | Two-step chemical-mechanical planarization for damascene structures on semiconductor wafers |
US6110832A (en) * | 1999-04-28 | 2000-08-29 | International Business Machines Corporation | Method and apparatus for slurry polishing |
US6375693B1 (en) | 1999-05-07 | 2002-04-23 | International Business Machines Corporation | Chemical-mechanical planarization of barriers or liners for copper metallurgy |
JP4513145B2 (ja) * | 1999-09-07 | 2010-07-28 | ソニー株式会社 | 半導体装置の製造方法および研磨方法 |
JP3645142B2 (ja) * | 2000-01-18 | 2005-05-11 | セイコーエプソン株式会社 | 半導体ウエハの処理方法ならびに半導体装置の製造方法 |
US6348395B1 (en) * | 2000-06-07 | 2002-02-19 | International Business Machines Corporation | Diamond as a polish-stop layer for chemical-mechanical planarization in a damascene process flow |
JP2002170792A (ja) | 2000-11-29 | 2002-06-14 | Mitsubishi Electric Corp | 研磨液供給装置及び研磨液供給方法、研磨装置及び研磨方法、並びに、半導体装置の製造方法 |
EP1369906B1 (de) * | 2001-02-20 | 2012-06-27 | Hitachi Chemical Company, Ltd. | Polierzusammensetzung und verfahren zum polieren eines substrats |
US7078343B2 (en) * | 2001-03-06 | 2006-07-18 | Sumitomo Electric Industries, Ltd. | Method of manufacturing compound semiconductor wafer |
US6641632B1 (en) * | 2002-11-18 | 2003-11-04 | International Business Machines Corporation | Polishing compositions and use thereof |
US6910951B2 (en) * | 2003-02-24 | 2005-06-28 | Dow Global Technologies, Inc. | Materials and methods for chemical-mechanical planarization |
JP4954462B2 (ja) * | 2004-10-19 | 2012-06-13 | 株式会社フジミインコーポレーテッド | 窒化シリコン膜選択的研磨用組成物およびそれを用いる研磨方法 |
KR100687425B1 (ko) * | 2005-12-14 | 2007-02-26 | 동부일렉트로닉스 주식회사 | 반도체 웨이퍼의 연마/세정장치 및 방법 |
JP2007234784A (ja) * | 2006-02-28 | 2007-09-13 | Fujimi Inc | 研磨用組成物 |
JP2008117807A (ja) * | 2006-10-31 | 2008-05-22 | Fujimi Inc | 研磨用組成物及び研磨方法 |
JP2008130988A (ja) * | 2006-11-24 | 2008-06-05 | Fujimi Inc | 研磨用組成物及び研磨方法 |
WO2008105223A1 (ja) * | 2007-02-27 | 2008-09-04 | Hitachi Chemical Co., Ltd. | シリコン膜用cmpスラリー |
CN101570002B (zh) * | 2008-05-04 | 2014-08-13 | 世界先进积体电路股份有限公司 | 研磨设备 |
CN103909464B (zh) * | 2013-01-09 | 2017-10-31 | 华邦电子股份有限公司 | 化学机械研磨方法与自我对准方法 |
CN106531776B (zh) * | 2015-09-11 | 2021-06-29 | 联华电子股份有限公司 | 半导体结构 |
KR101693278B1 (ko) * | 2015-09-25 | 2017-01-05 | 유비머트리얼즈주식회사 | 슬러리 및 이를 이용한 기판 연마 방법 |
CN111745468A (zh) * | 2020-06-04 | 2020-10-09 | 东莞市天域半导体科技有限公司 | 一种采用金刚石抛光膏的碳化硅晶片快速抛光方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4690693A (en) * | 1985-12-05 | 1987-09-01 | Gte Products Corporation | High purity silicon nitride polishing compound |
US4735679A (en) * | 1987-03-30 | 1988-04-05 | International Business Machines Corporation | Method of improving silicon-on-insulator uniformity |
JPH01187930A (ja) * | 1988-01-22 | 1989-07-27 | Nippon Telegr & Teleph Corp <Ntt> | 研磨剤及び研磨方法 |
JPH02109332A (ja) * | 1988-10-19 | 1990-04-23 | Canon Inc | 半導体基板の製造方法 |
US5084071A (en) * | 1989-03-07 | 1992-01-28 | International Business Machines Corporation | Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor |
US4954142A (en) * | 1989-03-07 | 1990-09-04 | International Business Machines Corporation | Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor |
US5094972A (en) * | 1990-06-14 | 1992-03-10 | National Semiconductor Corp. | Means of planarizing integrated circuits with fully recessed isolation dielectric |
JP2689706B2 (ja) * | 1990-08-08 | 1997-12-10 | 上村工業株式会社 | 研磨方法 |
WO1993001129A1 (en) * | 1991-07-03 | 1993-01-21 | Novosibirsky Zavod Iskusstvennogo Volokna | Carbon composition and method of obtaining it |
US5376222A (en) * | 1991-09-04 | 1994-12-27 | Fujitsu Limited | Polishing method for polycrystalline silicon |
US5246884A (en) * | 1991-10-30 | 1993-09-21 | International Business Machines Corporation | Cvd diamond or diamond-like carbon for chemical-mechanical polish etch stop |
JP3060714B2 (ja) * | 1992-04-15 | 2000-07-10 | 日本電気株式会社 | 半導体集積回路の製造方法 |
US5225034A (en) * | 1992-06-04 | 1993-07-06 | Micron Technology, Inc. | Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing |
ES2086958T3 (es) * | 1992-07-28 | 1996-07-01 | Minnesota Mining & Mfg | Grano abrasivo, metodo para hacerlo y productos abrasivos. |
US5213591A (en) * | 1992-07-28 | 1993-05-25 | Ahmet Celikkaya | Abrasive grain, method of making same and abrasive products |
US5607718A (en) * | 1993-03-26 | 1997-03-04 | Kabushiki Kaisha Toshiba | Polishing method and polishing apparatus |
US5603739A (en) * | 1995-06-09 | 1997-02-18 | Diamond Scientific, Inc. | Abrasive suspension system |
EP0786504A3 (de) * | 1996-01-29 | 1998-05-20 | Fujimi Incorporated | Politurzusammensetzung |
US5738800A (en) * | 1996-09-27 | 1998-04-14 | Rodel, Inc. | Composition and method for polishing a composite of silica and silicon nitride |
US5721172A (en) * | 1996-12-02 | 1998-02-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Self-aligned polish stop layer hard masking method for forming planarized aperture fill layers |
US5759917A (en) * | 1996-12-30 | 1998-06-02 | Cabot Corporation | Composition for oxide CMP |
-
1996
- 1996-04-08 JP JP11057696A patent/JP3230986B2/ja not_active Expired - Fee Related
- 1996-10-02 TW TW085112035A patent/TW428225B/zh not_active IP Right Cessation
- 1996-11-06 KR KR1019960052266A patent/KR100348097B1/ko not_active IP Right Cessation
- 1996-11-12 CN CN96114541A patent/CN1083154C/zh not_active Expired - Fee Related
- 1996-11-12 US US08/747,518 patent/US6069083A/en not_active Expired - Fee Related
- 1996-11-13 DE DE69619207T patent/DE69619207T2/de not_active Expired - Lifetime
- 1996-11-13 EP EP96118198A patent/EP0777266B1/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
JP3230986B2 (ja) | 2001-11-19 |
US6069083A (en) | 2000-05-30 |
TW428225B (en) | 2001-04-01 |
EP0777266B1 (de) | 2002-02-13 |
DE69619207D1 (de) | 2002-03-21 |
JPH09199455A (ja) | 1997-07-31 |
CN1156326A (zh) | 1997-08-06 |
KR970030439A (ko) | 1997-06-26 |
CN1083154C (zh) | 2002-04-17 |
KR100348097B1 (ko) | 2003-01-06 |
EP0777266A1 (de) | 1997-06-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |