DE69619265D1 - Esd-schutzstruktur für halbleiterchips - Google Patents

Esd-schutzstruktur für halbleiterchips

Info

Publication number
DE69619265D1
DE69619265D1 DE69619265T DE69619265T DE69619265D1 DE 69619265 D1 DE69619265 D1 DE 69619265D1 DE 69619265 T DE69619265 T DE 69619265T DE 69619265 T DE69619265 T DE 69619265T DE 69619265 D1 DE69619265 D1 DE 69619265D1
Authority
DE
Germany
Prior art keywords
active areas
transistor
coupled
protection structure
well resistors
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69619265T
Other languages
English (en)
Other versions
DE69619265T2 (de
Inventor
L Casper
K Ma
C Sher
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of DE69619265D1 publication Critical patent/DE69619265D1/de
Publication of DE69619265T2 publication Critical patent/DE69619265T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
    • H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
    • H01L27/0288—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using passive elements as protective elements, e.g. resistors, capacitors, inductors, spark-gaps
DE69619265T 1995-11-30 1996-11-25 Esd-schutzstruktur für halbleiterchips Expired - Lifetime DE69619265T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US56542195A 1995-11-30 1995-11-30
PCT/US1996/018886 WO1997020348A1 (en) 1995-11-30 1996-11-25 Structure for esd protection in semiconductor chips

Publications (2)

Publication Number Publication Date
DE69619265D1 true DE69619265D1 (de) 2002-03-21
DE69619265T2 DE69619265T2 (de) 2002-10-24

Family

ID=24258518

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69619265T Expired - Lifetime DE69619265T2 (de) 1995-11-30 1996-11-25 Esd-schutzstruktur für halbleiterchips

Country Status (8)

Country Link
US (2) US5767552A (de)
EP (1) EP0864176B1 (de)
JP (1) JP3232335B2 (de)
KR (1) KR100298819B1 (de)
AT (1) ATE213360T1 (de)
AU (1) AU1123597A (de)
DE (1) DE69619265T2 (de)
WO (1) WO1997020348A1 (de)

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KR100298819B1 (ko) * 1995-11-30 2001-11-02 로데릭 더블류 루이스 반도체칩에서의정전기방전(esd)보호구조
JP3535744B2 (ja) * 1998-06-26 2004-06-07 Ｎｅｃマイクロシステム株式会社 半導体集積回路
JP4295370B2 (ja) * 1998-07-02 2009-07-15 Ｏｋｉセミコンダクタ株式会社 半導体素子
US6265756B1 (en) * 1999-04-19 2001-07-24 Triquint Semiconductor, Inc. Electrostatic discharge protection device
US6587320B1 (en) 2000-01-04 2003-07-01 Sarnoff Corporation Apparatus for current ballasting ESD sensitive devices
US6552406B1 (en) 2000-10-03 2003-04-22 International Business Machines Corporation SiGe transistor, varactor and p-i-n velocity saturated ballasting element for BiCMOS peripheral circuits and ESD networks
US6465870B2 (en) * 2001-01-25 2002-10-15 International Business Machines Corporation ESD robust silicon germanium transistor with emitter NP-block mask extrinsic base ballasting resistor with doped facet region
US6678133B2 (en) 2001-03-09 2004-01-13 Micron Technology, Inc. Electrostatic discharge protection with input impedance
DE10209069B4 (de) * 2002-02-28 2008-12-04 IHP GmbH - Innovations for High Performance Microelectronics/ Institut für innovative Mikroelektronik GmbH Spannungsbegrenzungselement für hochintegrierte Schaltungen
US6809386B2 (en) * 2002-08-29 2004-10-26 Micron Technology, Inc. Cascode I/O driver with improved ESD operation
JP4993941B2 (ja) * 2006-04-27 2012-08-08 パナソニック株式会社 半導体集積回路及びこれを備えたシステムｌｓｉ
US7692483B2 (en) * 2007-10-10 2010-04-06 Atmel Corporation Apparatus and method for preventing snap back in integrated circuits
US8085604B2 (en) * 2008-12-12 2011-12-27 Atmel Corporation Snap-back tolerant integrated circuits

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EP0161983B1 (de) 1984-05-03 1992-07-01 Digital Equipment Corporation Eingangs-Schutzanordnung für VLSI-Schaltungsanordnungen
JPH0691196B2 (ja) * 1984-07-25 1994-11-14 株式会社日立製作所 半導体装置
FR2598852B1 (fr) * 1986-05-16 1988-10-21 Eurotechnique Sa Dispositif de protection d'entree pour circuits integres en technologie cmos.
US4822749A (en) * 1987-08-27 1989-04-18 North American Philips Corporation, Signetics Division Self-aligned metallization for semiconductor device and process using selectively deposited tungsten
US4977537A (en) 1988-09-23 1990-12-11 Dallas Semiconductor Corporation Dram nonvolatizer
US5304502A (en) * 1988-11-08 1994-04-19 Yamaha Corporation Process of fabricating semiconductor integrated circuit having conductive strips used as resistor and gate electrode of component transistor
US5079441A (en) 1988-12-19 1992-01-07 Texas Instruments Incorporated Integrated circuit having an internal reference circuit to supply internal logic circuits with a reduced voltage
US5051860A (en) * 1989-05-12 1991-09-24 Western Digital Corporation Electro-static discharge protection circuit with bimodal resistance characteristics
US5066999A (en) * 1989-10-23 1991-11-19 Micron Technology, Inc. Resistor under wirebond pad
US5227327A (en) 1989-11-10 1993-07-13 Seiko Epson Corporation Method for making high impedance pull-up and pull-down input protection resistors for active integrated circuits
US5283449A (en) * 1990-08-09 1994-02-01 Nec Corporation Semiconductor integrated circuit device including two types of MOSFETS having source/drain region different in sheet resistance from each other
US5148056A (en) 1991-03-27 1992-09-15 Mos Electronics Corp. Output buffer circuit
US5274276A (en) 1992-06-26 1993-12-28 Micron Technology, Inc. Output driver circuit comprising a programmable circuit for determining the potential at the output node and the method of implementing the circuit
JP3013624B2 (ja) * 1992-09-01 2000-02-28 日本電気株式会社 半導体集積回路装置
US5838033A (en) * 1993-09-08 1998-11-17 Lucent Technologies Inc. Integrated circuit with gate conductor defined resistor
DE4423591C2 (de) * 1994-07-06 1996-08-29 Itt Ind Gmbh Deutsche Schutzstruktur für integrierte Schaltungen
US5440162A (en) * 1994-07-26 1995-08-08 Rockwell International Corporation ESD protection for submicron CMOS circuits
US5517049A (en) * 1994-09-30 1996-05-14 Vlsi Technology, Inc. CMOS output buffer with enhanced ESD resistance
US5576557A (en) * 1995-04-14 1996-11-19 United Microelectronics Corp. Complementary LVTSCR ESD protection circuit for sub-micron CMOS integrated circuits
US5578860A (en) * 1995-05-01 1996-11-26 Motorola, Inc. Monolithic high frequency integrated circuit structure having a grounded source configuration
US5682047A (en) * 1995-06-07 1997-10-28 Lsi Logic Corporation Input-output (I/O) structure with capacitively triggered thyristor for electrostatic discharge (ESD) protection
JPH0936357A (ja) 1995-07-18 1997-02-07 Matsushita Electric Ind Co Ltd 半導体装置
US5654860A (en) * 1995-08-16 1997-08-05 Micron Technology, Inc. Well resistor for ESD protection of CMOS circuits
KR100298819B1 (ko) * 1995-11-30 2001-11-02 로데릭 더블류 루이스 반도체칩에서의정전기방전(esd)보호구조
KR100190008B1 (ko) 1995-12-30 1999-06-01 윤종용 반도체 장치의 정전하 보호 장치
US5637902A (en) * 1996-01-16 1997-06-10 Vlsi Technology, Inc. N-well resistor as a ballast resistor for output MOSFET
US5744839A (en) * 1996-06-11 1998-04-28 Micron Technology, Inc. ESD protection using selective siliciding techniques
US5763919A (en) * 1996-07-08 1998-06-09 Winbond Electronics Corporation MOS transistor structure for electro-static discharge protection circuitry having dispersed parallel paths
JPH1070266A (ja) * 1996-08-26 1998-03-10 Nec Corp 半導体装置およびその製造方法
JP3169844B2 (ja) * 1996-12-11 2001-05-28 日本電気株式会社 半導体装置
TW423160B (en) 1997-04-03 2001-02-21 Winbond Electronics Corp Lateral silicon controlled rectifier for electrostatic discharge protection
US5910673A (en) 1997-12-04 1999-06-08 Sharp Microelectronics Technology, Inc. Locos MOS device for ESD protection
US5929493A (en) * 1998-03-31 1999-07-27 Texas Instruments--Acer Incorporated CMOS transistors with self-aligned planarization twin-well by using fewer mask counts
US6211001B1 (en) * 1998-07-24 2001-04-03 Sharp Laboratories Of America, Inc. Electrostatic discharge protection for salicided devices and method of making same
US6184557B1 (en) * 1999-01-28 2001-02-06 National Semiconductor Corporation I/O circuit that utilizes a pair of well structures as resistors to delay an ESD event and as diodes for ESD protection

Also Published As

Publication number Publication date
EP0864176B1 (de) 2002-02-13
ATE213360T1 (de) 2002-02-15
JPH11504766A (ja) 1999-04-27
KR19990071816A (ko) 1999-09-27
JP3232335B2 (ja) 2001-11-26
DE69619265T2 (de) 2002-10-24
AU1123597A (en) 1997-06-19
US5767552A (en) 1998-06-16
WO1997020348A1 (en) 1997-06-05
US6586290B1 (en) 2003-07-01
EP0864176A1 (de) 1998-09-16
KR100298819B1 (ko) 2001-11-02

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