DE69623977T2 - Speichersystem mit programmierbaren steuerparametern - Google Patents

Speichersystem mit programmierbaren steuerparametern

Info

Publication number
DE69623977T2
DE69623977T2 DE69623977T DE69623977T DE69623977T2 DE 69623977 T2 DE69623977 T2 DE 69623977T2 DE 69623977 T DE69623977 T DE 69623977T DE 69623977 T DE69623977 T DE 69623977T DE 69623977 T2 DE69623977 T2 DE 69623977T2
Authority
DE
Germany
Prior art keywords
memory
control parameters
data storage
storage units
memory cells
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69623977T
Other languages
English (en)
Other versions
DE69623977D1 (de
Inventor
F Roohparvar
D Rinerson
J Chevallier
S Briner
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=24024255&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69623977(T2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Application granted granted Critical
Publication of DE69623977D1 publication Critical patent/DE69623977D1/de
Publication of DE69623977T2 publication Critical patent/DE69623977T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/20—Initialising; Data preset; Chip identification
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/021—Detection or location of defective auxiliary circuits, e.g. defective refresh counters in voltage or current generators
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/02—Detection or location of defective auxiliary circuits, e.g. defective refresh counters
    • G11C29/028—Detection or location of defective auxiliary circuits, e.g. defective refresh counters with adaption or trimming of parameters
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C29/46—Test trigger logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
    • G11C5/04—Supports for storage elements, e.g. memory modules; Mounting or fixing of storage elements on such supports
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1015—Read-write modes for single port memories, i.e. having either a random port or a serial port
    • G11C7/1045—Read-write mode select circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
    • G11C2029/4402—Internal storage of test result, quality data, chip identification, repair information
DE69623977T 1995-07-28 1996-07-17 Speichersystem mit programmierbaren steuerparametern Expired - Lifetime DE69623977T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/508,828 US5801985A (en) 1995-07-28 1995-07-28 Memory system having programmable control parameters
PCT/US1996/011770 WO1997005622A1 (en) 1995-07-28 1996-07-17 Memory system having programmable control parameters

Publications (2)

Publication Number Publication Date
DE69623977D1 DE69623977D1 (de) 2002-10-31
DE69623977T2 true DE69623977T2 (de) 2003-01-23

Family

ID=24024255

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69623977T Expired - Lifetime DE69623977T2 (de) 1995-07-28 1996-07-17 Speichersystem mit programmierbaren steuerparametern

Country Status (8)

Country Link
US (2) US5801985A (de)
EP (1) EP0847582B1 (de)
JP (1) JPH10510657A (de)
KR (1) KR100294601B1 (de)
AT (1) ATE225075T1 (de)
AU (1) AU6497096A (de)
DE (1) DE69623977T2 (de)
WO (1) WO1997005622A1 (de)

Families Citing this family (158)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5636166A (en) 1995-12-05 1997-06-03 Micron Quantum Devices, Inc. Apparatus for externally timing high voltage cycles of non-volatile memory system
US6073204A (en) * 1997-04-23 2000-06-06 Micron Technology, Inc. Memory system having flexible architecture and method
JPH09293015A (ja) * 1996-04-24 1997-11-11 Mitsubishi Electric Corp メモリシステムおよびそれに用いられる半導体記憶装置
US6133773A (en) * 1997-10-10 2000-10-17 Rambus Inc Variable delay element
US6513103B1 (en) * 1997-10-10 2003-01-28 Rambus Inc. Method and apparatus for adjusting the performance of a synchronous memory system
US6047346A (en) * 1998-02-02 2000-04-04 Rambus Inc. System for adjusting slew rate on an output of a drive circuit by enabling a plurality of pre-drivers and a plurality of output drivers
JPH11243041A (ja) * 1998-02-26 1999-09-07 Mitsubishi Electric Corp 品質管理システムおよび記録媒体
US6587903B2 (en) 1998-02-27 2003-07-01 Micron Technology, Inc. Soft programming for recovery of overerasure
US6240023B1 (en) 1998-02-27 2001-05-29 Micron Technology, Inc. Method for efficiently executing soft programming of a memory block
US6094395A (en) * 1998-03-27 2000-07-25 Infineon Technologies North America Corp. Arrangement for controlling voltage generators in multi-voltage generator chips such as DRAMs
US6438043B2 (en) 1998-09-02 2002-08-20 Micron Technology, Inc. Adjustable I/O timing from externally applied voltage
JP2000357391A (ja) * 1999-06-14 2000-12-26 Fujitsu Ltd 半導体集積回路
JP4023953B2 (ja) * 1999-06-22 2007-12-19 株式会社ルネサステクノロジ 不揮発性半導体記憶装置
US6629317B1 (en) * 1999-07-30 2003-09-30 Pitney Bowes Inc. Method for providing for programming flash memory of a mailing apparatus
US6643787B1 (en) * 1999-10-19 2003-11-04 Rambus Inc. Bus system optimization
US6404660B1 (en) * 1999-12-23 2002-06-11 Rambus, Inc. Semiconductor package with a controlled impedance bus and method of forming same
US6615307B1 (en) * 2000-05-10 2003-09-02 Micron Technology, Inc. Flash with consistent latency for read operations
US20020069352A1 (en) * 2000-12-01 2002-06-06 Fanning Blaise B. System and method for efficient BIOS initialization
JP2002230985A (ja) * 2001-02-06 2002-08-16 Sharp Corp 不揮発性半導体記憶装置及びその制御方法
US6889304B2 (en) 2001-02-28 2005-05-03 Rambus Inc. Memory device supporting a dynamically configurable core organization
US7610447B2 (en) * 2001-02-28 2009-10-27 Rambus Inc. Upgradable memory system with reconfigurable interconnect
US6549467B2 (en) 2001-03-09 2003-04-15 Micron Technology, Inc. Non-volatile memory device with erase address register
US6452836B1 (en) 2001-03-09 2002-09-17 Micron Technology, Inc. Non-volatile memory device with erase cycle register
US6779045B2 (en) * 2001-03-21 2004-08-17 Intel Corporation System and apparatus for increasing the number of operations per transmission for a media management system
JP2002288988A (ja) * 2001-03-28 2002-10-04 Mitsubishi Electric Corp 不揮発性半導体記憶装置
US6490202B2 (en) 2001-04-06 2002-12-03 Micron Technology, Inc. Non-volatile memory device with erase register
US7500075B1 (en) 2001-04-17 2009-03-03 Rambus Inc. Mechanism for enabling full data bus utilization without increasing data granularity
US6614689B2 (en) 2001-08-13 2003-09-02 Micron Technology, Inc. Non-volatile memory having a control mini-array
US6825841B2 (en) * 2001-09-07 2004-11-30 Rambus Inc. Granularity memory column access
JP4739619B2 (ja) * 2001-09-27 2011-08-03 シチズンホールディングス株式会社 半導体不揮発性記憶装置
US6515909B1 (en) * 2001-10-05 2003-02-04 Micron Technology Inc. Flash memory device with a variable erase pulse
US7061810B2 (en) * 2001-10-09 2006-06-13 Micron Technology, Inc. Erasing flash memory without pre-programming the flash memory before erasing
US6711062B1 (en) 2002-07-17 2004-03-23 Taiwan Semiconductor Manufacturing Company Erase method of split gate flash memory reference cells
KR100482996B1 (ko) * 2002-08-30 2005-04-15 주식회사 하이닉스반도체 비휘발성 강유전체 메모리 장치
US7808937B2 (en) 2005-04-07 2010-10-05 Rambus, Inc. Variable interference cancellation technology for CDMA systems
US7426535B2 (en) 2002-10-08 2008-09-16 Telecommunication Systems, Inc. Coordination of data received from one or more sources over one or more channels into a single context
US20050077941A1 (en) * 2003-10-10 2005-04-14 Fagan John L. Selectable delay pulse generator
US7490325B2 (en) 2004-03-13 2009-02-10 Cluster Resources, Inc. System and method for providing intelligent pre-staging of data in a compute environment
US8782654B2 (en) 2004-03-13 2014-07-15 Adaptive Computing Enterprises, Inc. Co-allocating a reservation spanning different compute resources types
US20070266388A1 (en) 2004-06-18 2007-11-15 Cluster Resources, Inc. System and method for providing advanced reservations in a compute environment
US7447847B2 (en) * 2004-07-19 2008-11-04 Micron Technology, Inc. Memory device trims
US8190808B2 (en) * 2004-08-17 2012-05-29 Rambus Inc. Memory device having staggered memory operations
US8176490B1 (en) 2004-08-20 2012-05-08 Adaptive Computing Enterprises, Inc. System and method of interfacing a workload manager and scheduler with an identity manager
US7280428B2 (en) 2004-09-30 2007-10-09 Rambus Inc. Multi-column addressing mode memory system including an integrated circuit memory device
US7254075B2 (en) * 2004-09-30 2007-08-07 Rambus Inc. Integrated circuit memory system having dynamic memory bank count and page size
US7310704B1 (en) * 2004-11-02 2007-12-18 Symantec Operating Corporation System and method for performing online backup and restore of volume configuration information
CA2586763C (en) 2004-11-08 2013-12-17 Cluster Resources, Inc. System and method of providing system jobs within a compute environment
US8595459B2 (en) 2004-11-29 2013-11-26 Rambus Inc. Micro-threaded memory
US7447964B2 (en) * 2005-01-03 2008-11-04 International Business Machines Corporation Difference signal path test and characterization circuit
US8631130B2 (en) 2005-03-16 2014-01-14 Adaptive Computing Enterprises, Inc. Reserving resources in an on-demand compute environment from a local compute environment
US8863143B2 (en) 2006-03-16 2014-10-14 Adaptive Computing Enterprises, Inc. System and method for managing a hybrid compute environment
US9231886B2 (en) 2005-03-16 2016-01-05 Adaptive Computing Enterprises, Inc. Simple integration of an on-demand compute environment
CA2603577A1 (en) 2005-04-07 2006-10-12 Cluster Resources, Inc. On-demand access to compute resources
US20060248305A1 (en) * 2005-04-13 2006-11-02 Wayne Fang Memory device having width-dependent output latency
US8019883B1 (en) 2005-05-05 2011-09-13 Digital Display Innovations, Llc WiFi peripheral mode display system
US11733958B2 (en) 2005-05-05 2023-08-22 Iii Holdings 1, Llc Wireless mesh-enabled system, host device, and method for use therewith
KR100630537B1 (ko) * 2005-08-09 2006-10-02 주식회사 하이닉스반도체 듀얼 페이지 프로그램 기능을 가지는 플래시 메모리 장치의페이지 버퍼 회로 및 그 프로그램 동작 방법
WO2007080586A2 (en) * 2006-01-10 2007-07-19 Saifun Semiconductors Ltd. Rd algorithm improvement for nrom technology
US8090082B2 (en) 2006-01-23 2012-01-03 Icall, Inc. System, method and computer program product for extracting user profiles and habits based on speech recognition and calling history for telephone system advertising
US7463520B2 (en) * 2006-03-24 2008-12-09 Micron Technology, Inc. Memory device with variable trim settings
WO2007121441A2 (en) 2006-04-17 2007-10-25 Vovision Llc Methods and systems for correcting transcribed audio files
US20070260841A1 (en) 2006-05-02 2007-11-08 Hampel Craig E Memory module with reduced access granularity
US7697326B2 (en) 2006-05-12 2010-04-13 Anobit Technologies Ltd. Reducing programming error in memory devices
KR101202537B1 (ko) 2006-05-12 2012-11-19 애플 인크. 메모리 디바이스를 위한 결합된 왜곡 추정 및 에러 보정 코딩
WO2007132456A2 (en) 2006-05-12 2007-11-22 Anobit Technologies Ltd. Memory device with adaptive capacity
CN103280239B (zh) 2006-05-12 2016-04-06 苹果公司 存储设备中的失真估计和消除
US7663925B2 (en) * 2006-05-15 2010-02-16 Micron Technology Inc. Method and apparatus for programming flash memory
JP4591836B2 (ja) * 2006-05-22 2010-12-01 エルピーダメモリ株式会社 半導体記憶装置及びそのテスト方法
JP4425250B2 (ja) * 2006-08-15 2010-03-03 Ｏｋｉセミコンダクタ株式会社 半導体不揮発性メモリ
WO2008026203A2 (en) 2006-08-27 2008-03-06 Anobit Technologies Estimation of non-linear distortion in memory devices
JP4997882B2 (ja) * 2006-09-05 2012-08-08 ソニー株式会社 不揮発性半導体記憶装置およびその書き込み方法
US7793172B2 (en) * 2006-09-28 2010-09-07 Freescale Semiconductor, Inc. Controlled reliability in an integrated circuit
CN101601094B (zh) 2006-10-30 2013-03-27 苹果公司 使用多个门限读取存储单元的方法
WO2008053472A2 (en) 2006-10-30 2008-05-08 Anobit Technologies Ltd. Reading memory cells using multiple thresholds
US7924648B2 (en) 2006-11-28 2011-04-12 Anobit Technologies Ltd. Memory power and performance management
US8151163B2 (en) 2006-12-03 2012-04-03 Anobit Technologies Ltd. Automatic defect management in memory devices
US7900102B2 (en) 2006-12-17 2011-03-01 Anobit Technologies Ltd. High-speed programming of memory devices
US7593263B2 (en) 2006-12-17 2009-09-22 Anobit Technologies Ltd. Memory device with reduced reading latency
US8151166B2 (en) 2007-01-24 2012-04-03 Anobit Technologies Ltd. Reduction of back pattern dependency effects in memory devices
US7751240B2 (en) 2007-01-24 2010-07-06 Anobit Technologies Ltd. Memory device with negative thresholds
KR100896181B1 (ko) * 2007-01-26 2009-05-12 삼성전자주식회사 임베디드 낸드 플래시 메모리 제어 장치 및 방법
CN101715595A (zh) 2007-03-12 2010-05-26 爱诺彼得技术有限责任公司 存储器单元读取阈的自适应估计
KR100843242B1 (ko) * 2007-04-04 2008-07-02 삼성전자주식회사 플래시 메모리 장치 및 그 구동방법
US8001320B2 (en) 2007-04-22 2011-08-16 Anobit Technologies Ltd. Command interface for memory devices
WO2008139441A2 (en) 2007-05-12 2008-11-20 Anobit Technologies Ltd. Memory device with internal signal processing unit
US8234545B2 (en) 2007-05-12 2012-07-31 Apple Inc. Data storage with incremental redundancy
US7925936B1 (en) 2007-07-13 2011-04-12 Anobit Technologies Ltd. Memory device with non-uniform programming levels
US8259497B2 (en) 2007-08-06 2012-09-04 Apple Inc. Programming schemes for multi-level analog memory cells
US8174905B2 (en) 2007-09-19 2012-05-08 Anobit Technologies Ltd. Programming orders for reducing distortion in arrays of multi-level analog memory cells
US8041773B2 (en) 2007-09-24 2011-10-18 The Research Foundation Of State University Of New York Automatic clustering for self-organizing grids
US7773413B2 (en) 2007-10-08 2010-08-10 Anobit Technologies Ltd. Reliable data storage in analog memory cells in the presence of temperature variations
US8000141B1 (en) 2007-10-19 2011-08-16 Anobit Technologies Ltd. Compensation for voltage drifts in analog memory cells
WO2009050703A2 (en) 2007-10-19 2009-04-23 Anobit Technologies Data storage in analog memory cell arrays having erase failures
US8068360B2 (en) 2007-10-19 2011-11-29 Anobit Technologies Ltd. Reading analog memory cells using built-in multi-threshold commands
US7688656B2 (en) * 2007-10-22 2010-03-30 Freescale Semiconductor, Inc. Integrated circuit memory having dynamically adjustable read margin and method therefor
WO2009063450A2 (en) 2007-11-13 2009-05-22 Anobit Technologies Optimized selection of memory units in multi-unit memory devices
US8225181B2 (en) 2007-11-30 2012-07-17 Apple Inc. Efficient re-read operations from memory devices
US9497583B2 (en) 2007-12-12 2016-11-15 Iii Holdings 2, Llc System and method for generating a recommendation on a mobile device
US8209588B2 (en) 2007-12-12 2012-06-26 Anobit Technologies Ltd. Efficient interference cancellation in analog memory cell arrays
US8456905B2 (en) 2007-12-16 2013-06-04 Apple Inc. Efficient data storage in multi-plane memory devices
US8085586B2 (en) 2007-12-27 2011-12-27 Anobit Technologies Ltd. Wear level estimation in analog memory cells
US8156398B2 (en) 2008-02-05 2012-04-10 Anobit Technologies Ltd. Parameter estimation based on error correction code parity check equations
US7924587B2 (en) 2008-02-21 2011-04-12 Anobit Technologies Ltd. Programming of analog memory cells using a single programming pulse per state transition
US7864573B2 (en) 2008-02-24 2011-01-04 Anobit Technologies Ltd. Programming analog memory cells for reduced variance after retention
US8230300B2 (en) 2008-03-07 2012-07-24 Apple Inc. Efficient readout from analog memory cells using data compression
US9961374B2 (en) 2008-03-07 2018-05-01 Iii Holdings 1, Llc Pause and replay of media content through bookmarks on a server device
US8059457B2 (en) 2008-03-18 2011-11-15 Anobit Technologies Ltd. Memory device with multiple-accuracy read commands
US8400858B2 (en) 2008-03-18 2013-03-19 Apple Inc. Memory device with reduced sense time readout
US7924613B1 (en) * 2008-08-05 2011-04-12 Anobit Technologies Ltd. Data storage in analog memory cells with protection against programming interruption
US8498151B1 (en) 2008-08-05 2013-07-30 Apple Inc. Data storage in analog memory cells using modified pass voltages
GB0815362D0 (en) 2008-08-22 2008-10-01 Queen Mary & Westfield College Music collection navigation
US8949684B1 (en) 2008-09-02 2015-02-03 Apple Inc. Segmented data storage
US8169825B1 (en) 2008-09-02 2012-05-01 Anobit Technologies Ltd. Reliable data storage in analog memory cells subjected to long retention periods
US8000135B1 (en) 2008-09-14 2011-08-16 Anobit Technologies Ltd. Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
US8482978B1 (en) 2008-09-14 2013-07-09 Apple Inc. Estimation of memory cell read thresholds by sampling inside programming level distribution intervals
US8638701B2 (en) 2008-09-26 2014-01-28 Nxp, B.V. Methods and apparatus for power saving in personal area networks
US8239734B1 (en) 2008-10-15 2012-08-07 Apple Inc. Efficient data storage in storage device arrays
US8261159B1 (en) 2008-10-30 2012-09-04 Apple, Inc. Data scrambling schemes for memory devices
US8208304B2 (en) 2008-11-16 2012-06-26 Anobit Technologies Ltd. Storage at M bits/cell density in N bits/cell analog memory cell devices, M>N
US8248831B2 (en) 2008-12-31 2012-08-21 Apple Inc. Rejuvenation of analog memory cells
US8397131B1 (en) 2008-12-31 2013-03-12 Apple Inc. Efficient readout schemes for analog memory cell devices
US8924661B1 (en) 2009-01-18 2014-12-30 Apple Inc. Memory system including a controller and processors associated with memory devices
US8228701B2 (en) 2009-03-01 2012-07-24 Apple Inc. Selective activation of programming schemes in analog memory cell arrays
US9230259B1 (en) 2009-03-20 2016-01-05 Jpmorgan Chase Bank, N.A. Systems and methods for mobile ordering and payment
US8259506B1 (en) 2009-03-25 2012-09-04 Apple Inc. Database of memory read thresholds
US8832354B2 (en) 2009-03-25 2014-09-09 Apple Inc. Use of host system resources by memory controller
US8238157B1 (en) 2009-04-12 2012-08-07 Apple Inc. Selective re-programming of analog memory cells
US8479080B1 (en) 2009-07-12 2013-07-02 Apple Inc. Adaptive over-provisioning in memory systems
US8233919B2 (en) 2009-08-09 2012-07-31 Hntb Holdings Ltd. Intelligently providing user-specific transportation-related information
EP2293524A1 (de) 2009-09-07 2011-03-09 Nxp B.V. Einstellung einer Medienstromübertragung sowie Server und Client für Medienstromübertragung
US8495465B1 (en) 2009-10-15 2013-07-23 Apple Inc. Error correction coding over multiple memory pages
US11720290B2 (en) 2009-10-30 2023-08-08 Iii Holdings 2, Llc Memcached server functionality in a cluster of data processing nodes
US10877695B2 (en) 2009-10-30 2020-12-29 Iii Holdings 2, Llc Memcached server functionality in a cluster of data processing nodes
US8243520B2 (en) * 2009-11-02 2012-08-14 Infineon Technologies Ag Non-volatile memory with predictive programming
US8677054B1 (en) 2009-12-16 2014-03-18 Apple Inc. Memory management schemes for non-volatile memory devices
US8694814B1 (en) 2010-01-10 2014-04-08 Apple Inc. Reuse of host hibernation storage space by memory controller
US8677203B1 (en) 2010-01-11 2014-03-18 Apple Inc. Redundant data storage schemes for multi-die memory systems
US8694853B1 (en) 2010-05-04 2014-04-08 Apple Inc. Read commands for reading interfering memory cells
US8370719B2 (en) 2010-05-21 2013-02-05 Intel Corporation Persistent moving read reference
US8799411B2 (en) 2010-05-28 2014-08-05 Arvato Digital Services Canada, Inc. Method and apparatus for providing enhanced streaming content delivery with multi-archive support using secure download manager and content-indifferent decoding
US8572423B1 (en) 2010-06-22 2013-10-29 Apple Inc. Reducing peak current in memory systems
US8595591B1 (en) 2010-07-11 2013-11-26 Apple Inc. Interference-aware assignment of programming levels in analog memory cells
US9104580B1 (en) 2010-07-27 2015-08-11 Apple Inc. Cache memory for hybrid disk drives
US8645794B1 (en) 2010-07-31 2014-02-04 Apple Inc. Data storage in analog memory cells using a non-integer number of bits per cell
US8856475B1 (en) 2010-08-01 2014-10-07 Apple Inc. Efficient selection of memory blocks for compaction
US8694854B1 (en) 2010-08-17 2014-04-08 Apple Inc. Read threshold setting based on soft readout statistics
US9021181B1 (en) 2010-09-27 2015-04-28 Apple Inc. Memory management for unifying memory cell conditions by using maximum time intervals
US9268719B2 (en) 2011-08-05 2016-02-23 Rambus Inc. Memory signal buffers and modules supporting variable access granularity
US10311014B2 (en) 2012-12-28 2019-06-04 Iii Holdings 2, Llc System, method and computer readable medium for offloaded computation of distributed application protocols within a cluster of data processing nodes
US9140747B2 (en) * 2013-07-22 2015-09-22 Qualcomm Incorporated Sense amplifier offset voltage reduction
US10176039B2 (en) 2014-09-19 2019-01-08 Micron Technology, Inc. Self-accumulating exclusive OR program
US10430112B2 (en) * 2014-12-22 2019-10-01 Sandisk Technologies Llc Memory block cycling based on memory wear or data retention
US10382831B2 (en) * 2017-03-21 2019-08-13 Cox Communications, Inc. Determining signal recovery in communication networks using connectivity disruption techniques
US11188244B2 (en) * 2020-04-14 2021-11-30 Micron Technology, Inc. Adjusting trim settings to improve memory performance or reliability
US11556416B2 (en) 2021-05-05 2023-01-17 Apple Inc. Controlling memory readout reliability and throughput by adjusting distance between read thresholds
TWI804879B (zh) * 2021-05-31 2023-06-11 華邦電子股份有限公司 記憶體儲存裝置及其操作方法
US11501807B1 (en) 2021-06-08 2022-11-15 Winbond Electronics Corp. Memory storage apparatus and operating method thereof
US11847342B2 (en) 2021-07-28 2023-12-19 Apple Inc. Efficient transfer of hard data and confidence levels in reading a nonvolatile memory

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2020437B (en) * 1978-04-14 1982-08-04 Seiko Instr & Electronics Voltage detecting circuit
US4460982A (en) 1982-05-20 1984-07-17 Intel Corporation Intelligent electrically programmable and electrically erasable ROM
US4571704A (en) 1984-02-17 1986-02-18 Hughes Aircraft Company Nonvolatile latch
JPS6348698A (ja) 1986-08-15 1988-03-01 Fujitsu Kiden Ltd メモリ格納制御装置
US4858185A (en) 1988-01-28 1989-08-15 National Semiconductor Corporation Zero power, electrically alterable, nonvolatile latch
US5031142A (en) 1989-02-10 1991-07-09 Intel Corporation Reset circuit for redundant memory using CAM cells
US5047664A (en) * 1989-07-21 1991-09-10 Advanced Micro Devices, Inc. Trimming circuit
JPH03206709A (ja) * 1990-01-08 1991-09-10 Nec Corp パワーオン・リセット回路
US5144159A (en) * 1990-11-26 1992-09-01 Delco Electronics Corporation Power-on-reset (POR) circuit having power supply rise time independence
FR2672709B1 (fr) * 1991-02-11 1994-09-30 Intel Corp Machine d'etat d'ordre.
US5546561A (en) * 1991-02-11 1996-08-13 Intel Corporation Circuitry and method for selectively protecting the integrity of data stored within a range of addresses within a non-volatile semiconductor memory
US5249158A (en) * 1991-02-11 1993-09-28 Intel Corporation Flash memory blocking architecture
JP3042012B2 (ja) * 1991-04-19 2000-05-15 日本電気株式会社 パワーオンリセット装置
US5262990A (en) * 1991-07-12 1993-11-16 Intel Corporation Memory device having selectable number of output pins
JP2829156B2 (ja) 1991-07-25 1998-11-25 株式会社東芝 不揮発性半導体記憶装置の冗長回路
JP2761687B2 (ja) * 1991-12-19 1998-06-04 三菱電機株式会社 電圧レベル検出回路
US5280447A (en) * 1992-06-19 1994-01-18 Intel Corporation Floating gate nonvolatile memory with configurable erasure blocks
JPH06131879A (ja) 1992-10-20 1994-05-13 Hitachi Ltd 半導体記憶装置
US5485595A (en) * 1993-03-26 1996-01-16 Cirrus Logic, Inc. Flash memory mass storage architecture incorporating wear leveling technique without using cam cells
US5353256A (en) * 1993-06-30 1994-10-04 Intel Corporation Block specific status information in a memory device
US5377199A (en) * 1993-06-30 1994-12-27 Intel Corporation Boundary test scheme for an intelligent device
US5509134A (en) * 1993-06-30 1996-04-16 Intel Corporation Method and apparatus for execution of operations in a flash memory array
SG47058A1 (en) 1993-09-10 1998-03-20 Intel Corp Circuitry and method for selecting a drain programming voltage for a nonvolatile memory
US5526364A (en) * 1995-02-10 1996-06-11 Micron Quantum Devices, Inc. Apparatus for entering and executing test mode operations for memory
US5619453A (en) * 1995-07-28 1997-04-08 Micron Quantum Devices, Inc. Memory system having programmable flow control register
US5627784A (en) * 1995-07-28 1997-05-06 Micron Quantum Devices, Inc. Memory system having non-volatile data storage structure for memory control parameters and method
US5615159A (en) 1995-11-28 1997-03-25 Micron Quantum Devices, Inc. Memory system with non-volatile data storage unit and method of initializing same
US5675540A (en) 1996-01-22 1997-10-07 Micron Quantum Devices, Inc. Non-volatile memory system having internal data verification test mode
US5661690A (en) 1996-02-27 1997-08-26 Micron Quantum Devices, Inc. Circuit and method for performing tests on memory array cells using external sense amplifier reference current

Also Published As

Publication number Publication date
WO1997005622A1 (en) 1997-02-13
ATE225075T1 (de) 2002-10-15
JPH10510657A (ja) 1998-10-13
US6272586B1 (en) 2001-08-07
EP0847582A4 (de) 1999-09-01
KR100294601B1 (ko) 2001-09-07
AU6497096A (en) 1997-02-26
US5801985A (en) 1998-09-01
KR19990035980A (ko) 1999-05-25
EP0847582A1 (de) 1998-06-17
EP0847582B1 (de) 2002-09-25
DE69623977D1 (de) 2002-10-31

Similar Documents

Publication Publication Date Title
ATE225075T1 (de) Speichersystem mit programmierbaren steuerparametern
EP0842515A4 (de) Speichersystem mit nicht-flüchtiger datenspeicherstruktur für speichersteuerungsparameter und verfahren dafür
EP2293305B1 (de) Gezwungen aufgefrischte Speicheranordnung und Verfahren
WO2005124558A3 (en) Method and system for optimizing the number of word line segments in a segmented mram array
DE69625494T2 (de) Integrierte schaltung zur speicherung und wiederauffindung von mehreren digitalen bits pro nichtflüchtiger speicherzelle
EP0910091A3 (de) Programmierbare logische Vorrichtung mit zwei Anschlüssen sowie Speichermatrix mit variabler Tiefe und Breite
TW343307B (en) Nonvolatile memory system and nonvolatile semiconductor memory
TW330265B (en) Semiconductor apparatus
EP0333207A3 (de) Masken-rom mit Ersatzspeicherzellen
TW200710851A (en) Non-volatile memory device, and control method of non-volatile memory device
WO2007018985A3 (en) Method of sensing an eeprom reference cell
TW351785B (en) Improved interface for flash EEPROM memory array
CN110033797B (zh) 存储系统及存储方法
KR940018872A (ko) 불휘발성 반도체기억장치 및 이를 이용한 기억시스템
AU6604796A (en) Flash memory system having reduced disturb and method
EP0586114A3 (en) A semiconductor read only memory
SG131754A1 (en) Semiconductor storage device and information apparatus
EP0960423B1 (de) Wiederprogrammierbare speichereinrichtung mit variablem seitenformat
CN105261391A (zh) 一种sram存储阵列
US7123533B2 (en) Circuit and method for refreshing memory cells of a dynamic memory
US6839818B2 (en) Electrically modifiable, non-volatile, semiconductor memory which can keep a datum stored until an operation to modify the datum is completed
TW343337B (en) Semiconductor memory circuit
EP1191541A3 (de) EEPROM und Verfahren zur Ansteuerung desselben
JPS6482392A (en) Semiconductor memory device
JPS56159893A (en) Semiconductor storage device

Legal Events

Date Code Title Description
8364 No opposition during term of opposition