DE69624968D1 - Vernetzte Polymere - Google Patents

Vernetzte Polymere

Info

Publication number
DE69624968D1
DE69624968D1 DE69624968T DE69624968T DE69624968D1 DE 69624968 D1 DE69624968 D1 DE 69624968D1 DE 69624968 T DE69624968 T DE 69624968T DE 69624968 T DE69624968 T DE 69624968T DE 69624968 D1 DE69624968 D1 DE 69624968D1
Authority
DE
Germany
Prior art keywords
cross
linked polymers
polymers
linked
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69624968T
Other languages
English (en)
Other versions
DE69624968T2 (de
Inventor
Hans-Thomas Schacht
Norbert Muenzel
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Arch Specialty Chemicals Inc
Original Assignee
Arch Specialty Chemicals Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Arch Specialty Chemicals Inc filed Critical Arch Specialty Chemicals Inc
Publication of DE69624968D1 publication Critical patent/DE69624968D1/de
Application granted granted Critical
Publication of DE69624968T2 publication Critical patent/DE69624968T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G65/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
    • C08G65/34—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives
    • C08G65/38—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives derived from phenols
    • C08G65/40—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives derived from phenols from phenols (I) and other compounds (II), e.g. OH-Ar-OH + X-Ar-X, where X is halogen atom, i.e. leaving group
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G65/00—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule
    • C08G65/34—Macromolecular compounds obtained by reactions forming an ether link in the main chain of the macromolecule from hydroxy compounds or their metallic derivatives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
DE69624968T 1995-04-21 1996-04-19 Vernetzte Polymere Expired - Lifetime DE69624968T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CH114495 1995-04-21
CH215795 1995-07-21

Publications (2)

Publication Number Publication Date
DE69624968D1 true DE69624968D1 (de) 2003-01-09
DE69624968T2 DE69624968T2 (de) 2003-11-06

Family

ID=25686795

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69624968T Expired - Lifetime DE69624968T2 (de) 1995-04-21 1996-04-19 Vernetzte Polymere

Country Status (5)

Country Link
US (1) US5849808A (de)
EP (1) EP0738744B1 (de)
JP (1) JP3495503B2 (de)
KR (1) KR100348033B1 (de)
DE (1) DE69624968T2 (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5942367A (en) 1996-04-24 1999-08-24 Shin-Etsu Chemical Co., Ltd. Chemically amplified positive resist composition, pattern forming method, and method for preparing polymer having a crosslinking group
JP3781121B2 (ja) * 1997-06-26 2006-05-31 信越化学工業株式会社 レジスト材料
TW480370B (en) * 1997-10-08 2002-03-21 Shinetsu Chemical Co Polystyrene-based polymer compound, chemical amplification positive type resist material and pattern formation
TW546543B (en) * 1997-10-08 2003-08-11 Shinetsu Chemical Co Resist material and patterning process
KR100254472B1 (ko) * 1997-11-01 2000-05-01 김영환 신규한 말레이미드계 또는 지방족 환형 올레핀계 단량체와 이들 단량체들의 공중합체수지 및 이수지를 이용한 포토레지스트
KR100321080B1 (ko) 1997-12-29 2002-11-22 주식회사 하이닉스반도체 공중합체수지와이의제조방법및이수지를이용한포토레지스트
KR100520148B1 (ko) 1997-12-31 2006-05-12 주식회사 하이닉스반도체 신규한바이시클로알켄유도체와이를이용한포토레지스트중합체및이중합체를함유한포토레지스트조성물
US5945251A (en) * 1998-05-08 1999-08-31 Olin Corporation Process for producing purified solutions of blocked polyhydroxystyrene resins
CA2338523A1 (en) 1998-08-18 2000-03-02 3M Innovative Properties Company Polymers having silicon-containing acetal or ketal functional groups
KR20000015014A (ko) 1998-08-26 2000-03-15 김영환 신규의 포토레지스트용 단량체, 중합체 및 이를 이용한 포토레지스트 조성물
JP3587743B2 (ja) 1998-08-26 2004-11-10 株式会社ハイニックスセミコンダクター フォトレジスト単量体とその製造方法、フォトレジスト共重合体とその製造方法、フォトレジスト組成物、フォトレジストパターン形成方法、および、半導体素子。
US6569971B2 (en) * 1998-08-27 2003-05-27 Hyundai Electronics Industries Co., Ltd. Polymers for photoresist and photoresist compositions using the same
KR20000023292A (ko) * 1998-09-22 2000-04-25 카나가와 치히로 레지스트 재료 및 패턴 형성 방법
US6072006A (en) * 1998-11-06 2000-06-06 Arch Specialty Chemicals, Inc. Preparation of partially cross-linked polymers and their use in pattern formation
US6140015A (en) * 1998-12-10 2000-10-31 International Business Machines Corporation Photoresist compositions with pendant polar-functionalized aromatic groups and acid-labile branching
US6630282B2 (en) 2000-08-21 2003-10-07 Tokyo Ohka Kogyo Co., Ltd. Crosslinked positive-working photoresist composition
JP2004519734A (ja) 2001-04-04 2004-07-02 アーチ・スペシャルティ・ケミカルズ・インコーポレイテッド ケイ素含有アセタール保護ポリマーおよびそのフォトレジスト組成物
EP1736485B1 (de) * 2004-04-13 2013-07-31 Tokyo Ohka Kogyo Co., Ltd. Polymerverbindung, photoresistzusammensetzung mit einer derartigen polymerverbindung und verfahren zur ausbildung einer resiststruktur
JP4694153B2 (ja) * 2004-04-13 2011-06-08 東京応化工業株式会社 高分子化合物、該高分子化合物を含有するフォトレジスト組成物、およびレジストパターン形成方法
JP4722417B2 (ja) * 2004-06-18 2011-07-13 東京応化工業株式会社 化合物、高分子化合物、ポジ型レジスト組成物およびレジストパターン形成方法

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US332913A (en) * 1885-12-22 Henei lebasteub and stanislas henei eotjaet
US3964907A (en) * 1973-11-12 1976-06-22 Xerox Corporation Method for the preparation of relief printing masters
DE2746904A1 (de) * 1977-10-19 1979-04-26 Basf Wyandotte Corp Nichtionogene tenside
US4713441A (en) * 1986-08-01 1987-12-15 Sandoz Pharmaceuticals Corp. Polyacetal hydrogels formed from divinyl ethers and polyols
DE4007924A1 (de) * 1990-03-13 1991-09-19 Basf Ag Strahlungsempfindliches gemisch
EP0501919A1 (de) * 1991-03-01 1992-09-02 Ciba-Geigy Ag Strahlungsempfindliche Zusammensetzungen auf der Basis von Polyphenolen und Acetalen
JP3030672B2 (ja) * 1991-06-18 2000-04-10 和光純薬工業株式会社 新規なレジスト材料及びパタ−ン形成方法
DE4125260A1 (de) * 1991-07-31 1993-02-04 Hoechst Ag Oligomere verbindungen mit saeurelabilen schutzgruppen und damit hergestelltes positiv arbeitendes strahlungsempfindliches gemisch
US5580695A (en) * 1992-02-25 1996-12-03 Japan Synthetic Rubber Co., Ltd. Chemically amplified resist
EP0588544A3 (en) * 1992-09-14 1994-09-28 Wako Pure Chem Ind Ltd Fine pattern forming material and pattern formation process
US5496678A (en) * 1993-04-16 1996-03-05 Kansai Paint Co., Ltd. Photosensitive compositions containing a polymer with carboxyl and hydroxyphenyl groups, a compound with multiple ethylenic unsaturation and a photo-acid generator

Also Published As

Publication number Publication date
EP0738744A3 (de) 1998-01-07
KR100348033B1 (ko) 2002-12-06
EP0738744B1 (de) 2002-11-27
EP0738744A2 (de) 1996-10-23
JPH08305025A (ja) 1996-11-22
US5849808A (en) 1998-12-15
JP3495503B2 (ja) 2004-02-09
KR960037720A (ko) 1996-11-19
DE69624968T2 (de) 2003-11-06

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition