DE69628704D1 - Verfahren zum Herstellen eines Oxidfilms auf der Oberfläche eines Halbleitersubstrats - Google Patents
Verfahren zum Herstellen eines Oxidfilms auf der Oberfläche eines HalbleitersubstratsInfo
- Publication number
- DE69628704D1 DE69628704D1 DE69628704T DE69628704T DE69628704D1 DE 69628704 D1 DE69628704 D1 DE 69628704D1 DE 69628704 T DE69628704 T DE 69628704T DE 69628704 T DE69628704 T DE 69628704T DE 69628704 D1 DE69628704 D1 DE 69628704D1
- Authority
- DE
- Germany
- Prior art keywords
- producing
- semiconductor substrate
- oxide film
- oxide
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 title 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28026—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
- H01L21/28035—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the final conductor layer next to the insulator being silicon, e.g. polysilicon, with or without impurities
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28194—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation by deposition, e.g. evaporation, ALD, CVD, sputtering, laser deposition
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28211—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation in a gaseous ambient using an oxygen or a water vapour, e.g. RTO, possibly through a layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/511—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures
- H01L29/513—Insulating materials associated therewith with a compositional variation, e.g. multilayer structures the variation being perpendicular to the channel plane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP19672695 | 1995-08-01 | ||
JP7196726A JP2937817B2 (ja) | 1995-08-01 | 1995-08-01 | 半導体基板表面の酸化膜の形成方法及びmos半導体デバイスの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69628704D1 true DE69628704D1 (de) | 2003-07-24 |
DE69628704T2 DE69628704T2 (de) | 2004-04-22 |
Family
ID=16362578
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69628704T Expired - Lifetime DE69628704T2 (de) | 1995-08-01 | 1996-07-31 | Verfahren zum Herstellen eines Oxidfilms auf der Oberfläche eines Halbleitersubstrats |
Country Status (7)
Country | Link |
---|---|
US (1) | US6221788B1 (de) |
EP (1) | EP0757379B1 (de) |
JP (1) | JP2937817B2 (de) |
KR (1) | KR100202003B1 (de) |
DE (1) | DE69628704T2 (de) |
SG (1) | SG49343A1 (de) |
TW (1) | TW305058B (de) |
Families Citing this family (44)
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US6072209A (en) | 1997-07-08 | 2000-06-06 | Micro Technology, Inc. | Four F2 folded bit line DRAM cell structure having buried bit and word lines |
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US5907170A (en) | 1997-10-06 | 1999-05-25 | Micron Technology, Inc. | Circuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitor |
US6528837B2 (en) * | 1997-10-06 | 2003-03-04 | Micron Technology, Inc. | Circuit and method for an open bit line memory cell with a vertical transistor and trench plate trench capacitor |
US6066869A (en) * | 1997-10-06 | 2000-05-23 | Micron Technology, Inc. | Circuit and method for a folded bit line memory cell with vertical transistor and trench capacitor |
US6025225A (en) * | 1998-01-22 | 2000-02-15 | Micron Technology, Inc. | Circuits with a trench capacitor having micro-roughened semiconductor surfaces and methods for forming the same |
FR2775120B1 (fr) * | 1998-02-18 | 2000-04-07 | France Telecom | Procede de nitruration de la couche d'oxyde de grille d'un dispositif semiconducteur et dispositif obtenu |
US6246083B1 (en) | 1998-02-24 | 2001-06-12 | Micron Technology, Inc. | Vertical gain cell and array for a dynamic random access memory |
US6242775B1 (en) | 1998-02-24 | 2001-06-05 | Micron Technology, Inc. | Circuits and methods using vertical complementary transistors |
US6124729A (en) | 1998-02-27 | 2000-09-26 | Micron Technology, Inc. | Field programmable logic arrays with vertical transistors |
US5991225A (en) | 1998-02-27 | 1999-11-23 | Micron Technology, Inc. | Programmable memory address decode array with vertical transistors |
US6043527A (en) | 1998-04-14 | 2000-03-28 | Micron Technology, Inc. | Circuits and methods for a memory cell with a trench plate trench capacitor and a vertical bipolar read device |
US6134175A (en) | 1998-08-04 | 2000-10-17 | Micron Technology, Inc. | Memory address decode array with vertical transistors |
US6208164B1 (en) | 1998-08-04 | 2001-03-27 | Micron Technology, Inc. | Programmable logic array with vertical transistors |
US6511921B1 (en) * | 1999-01-12 | 2003-01-28 | Sumco Phoenix Corporation | Methods for reducing the reactivity of a semiconductor substrate surface and for evaluating electrical properties of a semiconductor substrate |
US6885466B1 (en) * | 1999-07-16 | 2005-04-26 | Denso Corporation | Method for measuring thickness of oxide film |
JP3786569B2 (ja) * | 2000-08-14 | 2006-06-14 | 松下電器産業株式会社 | 半導体装置の製造方法 |
US6555487B1 (en) | 2000-08-31 | 2003-04-29 | Micron Technology, Inc. | Method of selective oxidation conditions for dielectric conditioning |
JP2002353182A (ja) * | 2001-05-25 | 2002-12-06 | Mitsubishi Electric Corp | 半導体装置の洗浄方法および洗浄装置、ならびに半導体装置の製造方法 |
US6559068B2 (en) * | 2001-06-28 | 2003-05-06 | Koninklijke Philips Electronics N.V. | Method for improving inversion layer mobility in a silicon carbide metal-oxide semiconductor field-effect transistor |
JP3998930B2 (ja) * | 2001-08-01 | 2007-10-31 | 株式会社半導体エネルギー研究所 | 結晶質半導体膜の作製方法及び製造装置 |
DE10146703A1 (de) * | 2001-09-21 | 2003-04-10 | Elliptec Resonant Actuator Ag | Piezomotor mit Führung |
KR100409033B1 (ko) * | 2002-05-20 | 2003-12-11 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
JP3604018B2 (ja) | 2002-05-24 | 2004-12-22 | 独立行政法人科学技術振興機構 | シリコン基材表面の二酸化シリコン膜形成方法、半導体基材表面の酸化膜形成方法、及び半導体装置の製造方法 |
JP4164324B2 (ja) * | 2002-09-19 | 2008-10-15 | スパンション エルエルシー | 半導体装置の製造方法 |
JP4485754B2 (ja) | 2003-04-08 | 2010-06-23 | パナソニック株式会社 | 半導体装置の製造方法 |
WO2005078787A1 (ja) * | 2004-02-16 | 2005-08-25 | Sharp Kabushiki Kaisha | 薄膜トランジスタとその製造方法、表示装置、酸化膜の改質方法、酸化膜の形成方法、半導体装置、半導体装置の製造方法、および半導体装置の製造装置 |
TWI255510B (en) * | 2004-12-21 | 2006-05-21 | Ind Tech Res Inst | Method of forming ultra thin oxide layer by ozonated water |
US7727828B2 (en) * | 2005-10-20 | 2010-06-01 | Applied Materials, Inc. | Method for fabricating a gate dielectric of a field effect transistor |
US7888217B2 (en) * | 2005-10-20 | 2011-02-15 | Applied Materials, Inc. | Method for fabricating a gate dielectric of a field effect transistor |
US7851277B2 (en) | 2006-12-05 | 2010-12-14 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method of manufacturing same |
US20090107549A1 (en) * | 2007-10-24 | 2009-04-30 | Peter Borden | Percolating amorphous silicon solar cell |
USRE48951E1 (en) | 2015-08-05 | 2022-03-01 | Ecolab Usa Inc. | Hand hygiene compliance monitoring |
CN102005500B (zh) * | 2010-09-09 | 2012-02-29 | 中国科学院电工研究所 | 一种制备含SiO2的金属氧化物复合薄膜的方法 |
KR101518768B1 (ko) * | 2013-08-30 | 2015-05-11 | 주식회사 위스코하이텍 | 산화가 용이한 금속분말의 표면처리방법 및 장치 |
JP6376574B2 (ja) * | 2014-08-05 | 2018-08-22 | インテル・コーポレーション | 触媒酸化物の形成によって生成されたマイクロ電子デバイス分離を含む非プレーナトランジスタ、システム、および非プレーナトランジスタを製造する方法 |
JP6142964B2 (ja) * | 2014-08-28 | 2017-06-07 | 三菱電機株式会社 | 半導体装置の製造方法 |
US11456372B2 (en) | 2015-06-27 | 2022-09-27 | Intel Corporation | Multi-height finfet device by selective oxidation |
WO2017052601A1 (en) * | 2015-09-25 | 2017-03-30 | Intel Corporation | Techniques for controlling transistor sub-fin leakage |
CN110383355B (zh) | 2017-03-07 | 2021-08-27 | 埃科莱布美国股份有限公司 | 用于手部卫生分配器的监测模块 |
US10529219B2 (en) | 2017-11-10 | 2020-01-07 | Ecolab Usa Inc. | Hand hygiene compliance monitoring |
EP3900307A1 (de) | 2018-12-20 | 2021-10-27 | Ecolab USA, Inc. | Bidirektionale netzwerkkommunikation mit adaptiver route |
CN114038932A (zh) * | 2021-10-09 | 2022-02-11 | 上海大学 | 一种背部含有氧化硅-氮化钛双层接触结构的单晶硅太阳能电池及其制备方法 |
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DE3069973D1 (en) | 1979-08-25 | 1985-02-28 | Zaidan Hojin Handotai Kenkyu | Insulated-gate field-effect transistor |
US4526629A (en) * | 1984-05-15 | 1985-07-02 | International Business Machines Corporation | Catalytic oxidation of solid materials |
US4684541A (en) * | 1986-06-11 | 1987-08-04 | Regents Of The University Of Minnesota | Samarium-promoted oxidation of silicon and gallium arsenide surfaces |
US4782302A (en) * | 1986-10-31 | 1988-11-01 | The United States Of America As Represented By The United States Department Of Energy | Detector and energy analyzer for energetic-hydrogen in beams and plasmas |
US4806505A (en) * | 1987-10-30 | 1989-02-21 | Regents Of The University Of Minnesota | Samarium- and ytterbium-promoted oxidation of silicon and gallium arsenide surfaces |
JPH04218959A (ja) * | 1990-10-18 | 1992-08-10 | Mitsubishi Electric Corp | 半導体装置およびその制御方法 |
TW232079B (de) * | 1992-03-17 | 1994-10-11 | Wisconsin Alumni Res Found | |
US5622880A (en) | 1994-08-18 | 1997-04-22 | Sun Microsystems, Inc. | Method of making a low power, high performance junction transistor |
US5656827A (en) * | 1995-05-30 | 1997-08-12 | Vanderbilt University | Chemical sensor utilizing a chemically sensitive electrode in combination with thin diamond layers |
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1995
- 1995-08-01 JP JP7196726A patent/JP2937817B2/ja not_active Expired - Lifetime
-
1996
- 1996-07-29 TW TW085109306A patent/TW305058B/zh not_active IP Right Cessation
- 1996-07-31 KR KR1019960031733A patent/KR100202003B1/ko not_active IP Right Cessation
- 1996-07-31 DE DE69628704T patent/DE69628704T2/de not_active Expired - Lifetime
- 1996-07-31 EP EP96112355A patent/EP0757379B1/de not_active Expired - Lifetime
- 1996-08-01 SG SG1996010398A patent/SG49343A1/en unknown
-
1998
- 1998-12-18 US US09/213,626 patent/US6221788B1/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
KR970013100A (ko) | 1997-03-29 |
JPH0945679A (ja) | 1997-02-14 |
TW305058B (de) | 1997-05-11 |
KR100202003B1 (ko) | 1999-06-15 |
JP2937817B2 (ja) | 1999-08-23 |
EP0757379A1 (de) | 1997-02-05 |
DE69628704T2 (de) | 2004-04-22 |
US6221788B1 (en) | 2001-04-24 |
SG49343A1 (en) | 1998-05-18 |
EP0757379B1 (de) | 2003-06-18 |
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Owner name: KOBAYASHI, HIKARU, KYOTO, KYOTO, JP Owner name: PANASONIC CORP., KADOMA, OSAKA, JP |