DE69630328D1 - Präziser kontrollierter Niederschlag von Sauerstoff in Silizium - Google Patents
Präziser kontrollierter Niederschlag von Sauerstoff in SiliziumInfo
- Publication number
- DE69630328D1 DE69630328D1 DE69630328T DE69630328T DE69630328D1 DE 69630328 D1 DE69630328 D1 DE 69630328D1 DE 69630328 T DE69630328 T DE 69630328T DE 69630328 T DE69630328 T DE 69630328T DE 69630328 D1 DE69630328 D1 DE 69630328D1
- Authority
- DE
- Germany
- Prior art keywords
- oxygen
- silicon
- controlled precipitation
- precise controlled
- precise
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/403,301 US5593494A (en) | 1995-03-14 | 1995-03-14 | Precision controlled precipitation of oxygen in silicon |
| US403301 | 1995-03-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69630328D1 true DE69630328D1 (de) | 2003-11-20 |
| DE69630328T2 DE69630328T2 (de) | 2004-05-06 |
Family
ID=23595295
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69630328T Expired - Lifetime DE69630328T2 (de) | 1995-03-14 | 1996-03-08 | Präziser kontrollierter Niederschlag von Sauerstoff in Silizium |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US5593494A (de) |
| EP (1) | EP0732431B1 (de) |
| JP (1) | JPH08253392A (de) |
| KR (1) | KR960035771A (de) |
| CN (1) | CN1061705C (de) |
| DE (1) | DE69630328T2 (de) |
| MY (1) | MY115003A (de) |
| SG (1) | SG43246A1 (de) |
| TW (1) | TW344850B (de) |
Families Citing this family (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5788763A (en) * | 1995-03-09 | 1998-08-04 | Toshiba Ceramics Co., Ltd. | Manufacturing method of a silicon wafer having a controlled BMD concentration |
| US5904768A (en) * | 1996-10-15 | 1999-05-18 | Memc Electronic Materials, Inc. | Process for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic |
| US5994761A (en) | 1997-02-26 | 1999-11-30 | Memc Electronic Materials Spa | Ideal oxygen precipitating silicon wafers and oxygen out-diffusion-less process therefor |
| US6190631B1 (en) | 1997-04-09 | 2001-02-20 | Memc Electronic Materials, Inc. | Low defect density, ideal oxygen precipitating silicon |
| US6379642B1 (en) * | 1997-04-09 | 2002-04-30 | Memc Electronic Materials, Inc. | Vacancy dominated, defect-free silicon |
| EP1209258B1 (de) * | 1997-04-09 | 2004-06-16 | MEMC Electronic Materials, Inc. | Silicium mit niedriger Fehlerdichte |
| US5882989A (en) * | 1997-09-22 | 1999-03-16 | Memc Electronic Materials, Inc. | Process for the preparation of silicon wafers having a controlled distribution of oxygen precipitate nucleation centers |
| JP2003517412A (ja) * | 1998-06-26 | 2003-05-27 | エムイーエムシー・エレクトロニック・マテリアルズ・インコーポレイテッド | 任意に大きい直径を有する無欠陥シリコン結晶の成長方法 |
| US6828690B1 (en) * | 1998-08-05 | 2004-12-07 | Memc Electronic Materials, Inc. | Non-uniform minority carrier lifetime distributions in high performance silicon power devices |
| EP1914796B1 (de) * | 1998-09-02 | 2012-06-06 | MEMC Electronic Materials, Inc. | Verfahren zur Herstellung eines Czochralski-Siliziumwafers ohne Sauerstoffniederschlag |
| US6336968B1 (en) | 1998-09-02 | 2002-01-08 | Memc Electronic Materials, Inc. | Non-oxygen precipitating czochralski silicon wafers |
| EP1114454A2 (de) * | 1998-09-02 | 2001-07-11 | MEMC Electronic Materials, Inc. | Silizium auf isolator struktur aus einem einkristallsilizium mit niedriger fehlerdichte |
| EP1110240B1 (de) | 1998-09-02 | 2006-10-25 | MEMC Electronic Materials, Inc. | Verfahren zur herstellung von einem silizium wafer mit idealem sauerstoffniederschlagverhalten |
| KR100816696B1 (ko) | 1998-09-02 | 2008-03-27 | 엠이엠씨 일렉트로닉 머티리얼즈 인코포레이티드 | 개선된 내부 게터링을 갖는 열어닐된 웨이퍼 |
| DE69908965T2 (de) * | 1998-10-14 | 2004-05-13 | Memc Electronic Materials, Inc. | Wärmegetempertes einkristallines silizium mit niedriger fehlerdichte |
| EP1133590B1 (de) * | 1998-10-14 | 2003-12-17 | MEMC Electronic Materials, Inc. | Im wesentlichen defektfreie epitaktische siliziumscheiben |
| JP2000154070A (ja) * | 1998-11-16 | 2000-06-06 | Suminoe Textile Co Ltd | セラミックス三次元構造体及びその製造方法 |
| US6284384B1 (en) * | 1998-12-09 | 2001-09-04 | Memc Electronic Materials, Inc. | Epitaxial silicon wafer with intrinsic gettering |
| US20030051656A1 (en) | 1999-06-14 | 2003-03-20 | Charles Chiun-Chieh Yang | Method for the preparation of an epitaxial silicon wafer with intrinsic gettering |
| US6635587B1 (en) | 1999-09-23 | 2003-10-21 | Memc Electronic Materials, Inc. | Method for producing czochralski silicon free of agglomerated self-interstitial defects |
| EP1295324A1 (de) * | 2000-06-30 | 2003-03-26 | MEMC Electronic Materials, Inc. | Verfahren und vorrichtung zur herstellung eines siliziumwafers mit einer defektfreien zone |
| US6339016B1 (en) | 2000-06-30 | 2002-01-15 | Memc Electronic Materials, Inc. | Method and apparatus for forming an epitaxial silicon wafer with a denuded zone |
| US6599815B1 (en) | 2000-06-30 | 2003-07-29 | Memc Electronic Materials, Inc. | Method and apparatus for forming a silicon wafer with a denuded zone |
| EP1688519A3 (de) * | 2001-01-26 | 2007-10-17 | MEMC Electronic Materials, Inc. | Silizium mit niedriger defektdichte und mit leerstellendominiertem kern, das im wesentlichen frei von oxidationsinduzierten stapelfehlern ist |
| TWI256076B (en) * | 2001-04-11 | 2006-06-01 | Memc Electronic Materials | Control of thermal donor formation in high resistivity CZ silicon |
| WO2002086960A1 (en) * | 2001-04-20 | 2002-10-31 | Memc Electronic Materials, Inc. | Method for the preparation of a silicon wafer having stabilized oxygen precipitates |
| EP1406294A4 (de) * | 2001-07-10 | 2007-09-12 | Shinetsu Handotai Kk | Herstellungsverfahren für siliziumwafer, herstellungsverfahren für silizium-epitaxial-wafer und silizium-epitaxial-wafer |
| US6808781B2 (en) | 2001-12-21 | 2004-10-26 | Memc Electronic Materials, Inc. | Silicon wafers with stabilized oxygen precipitate nucleation centers and process for making the same |
| TWI276161B (en) * | 2001-12-21 | 2007-03-11 | Memc Electronic Materials | Ideal oxygen precipitating silicon wafers with nitrogen/carbon stabilized oxygen precipitate nucleation centers and process for making the same |
| US7201800B2 (en) | 2001-12-21 | 2007-04-10 | Memc Electronic Materials, Inc. | Process for making silicon wafers with stabilized oxygen precipitate nucleation centers |
| KR20040007025A (ko) * | 2002-07-16 | 2004-01-24 | 주식회사 하이닉스반도체 | 반도체 웨이퍼 제조 방법 |
| US6955718B2 (en) * | 2003-07-08 | 2005-10-18 | Memc Electronic Materials, Inc. | Process for preparing a stabilized ideal oxygen precipitating silicon wafer |
| CN100338270C (zh) * | 2004-11-05 | 2007-09-19 | 北京有色金属研究总院 | 一种单晶硅抛光片热处理工艺 |
| US7485928B2 (en) * | 2005-11-09 | 2009-02-03 | Memc Electronic Materials, Inc. | Arsenic and phosphorus doped silicon wafer substrates having intrinsic gettering |
| JP5121139B2 (ja) * | 2005-12-27 | 2013-01-16 | ジルトロニック アクチエンゲゼルシャフト | アニールウエハの製造方法 |
| TWI404836B (zh) * | 2006-05-19 | 2013-08-11 | Memc Electronic Materials | 控制由單晶矽在卓式成長過程側向表面產生的聚集點缺陷及氧團簇的形成 |
| US20090004426A1 (en) * | 2007-06-29 | 2009-01-01 | Memc Electronic Materials, Inc. | Suppression of Oxygen Precipitation in Heavily Doped Single Crystal Silicon Substrates |
| US20090004458A1 (en) * | 2007-06-29 | 2009-01-01 | Memc Electronic Materials, Inc. | Diffusion Control in Heavily Doped Substrates |
| JP5597378B2 (ja) * | 2009-03-27 | 2014-10-01 | グローバルウェーハズ・ジャパン株式会社 | シリコンウェーハの熱処理方法 |
| US9129919B2 (en) | 2012-11-19 | 2015-09-08 | Sunedison Semiconductor Limited | Production of high precipitate density wafers by activation of inactive oxygen precipitate nuclei |
| JP6260100B2 (ja) * | 2013-04-03 | 2018-01-17 | 株式会社Sumco | エピタキシャルシリコンウェーハの製造方法 |
| FR3009380B1 (fr) * | 2013-08-02 | 2015-07-31 | Commissariat Energie Atomique | Procede de localisation d'une plaquette dans son lingot |
| DE112017003436T5 (de) * | 2016-07-06 | 2019-03-21 | Tokuyama Corporation | Einkristalliner, plattenförmiger Siliziumkörper und Verfahren zu dessen Herstellung |
| US10692736B2 (en) * | 2016-11-14 | 2020-06-23 | Shin-Etsu Chemical Co., Ltd. | Method for producing high-photoelectric-conversion-efficiency solar cell and high-photoelectric-conversion-efficiency solar cell |
| CN109841513A (zh) * | 2017-11-24 | 2019-06-04 | 上海新昇半导体科技有限公司 | 一种晶片及其制造方法、电子装置 |
| CN109346433B (zh) * | 2018-09-26 | 2020-10-23 | 上海新傲科技股份有限公司 | 半导体衬底的键合方法以及键合后的半导体衬底 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2080780B (en) * | 1980-07-18 | 1983-06-29 | Secr Defence | Heat treatment of silicon slices |
| NL8102101A (nl) * | 1981-04-29 | 1982-11-16 | Philips Nv | Werkwijze voor het optrekken van een siliciumstaaf en halfgeleiderinrichting vervaardigd uit de siliciumstaaf. |
| JPS57197827A (en) * | 1981-05-29 | 1982-12-04 | Hitachi Ltd | Semiconductor substrate |
| US4437922A (en) * | 1982-03-26 | 1984-03-20 | International Business Machines Corporation | Method for tailoring oxygen precipitate particle density and distribution silicon wafers |
| EP0098406A1 (de) * | 1982-07-06 | 1984-01-18 | Texas Instruments Incorporated | Wachsende Keimbildung von Änderungen in fester Phase |
| US4622082A (en) * | 1984-06-25 | 1986-11-11 | Monsanto Company | Conditioned semiconductor substrates |
| US4809196A (en) * | 1986-04-10 | 1989-02-28 | International Business Machines Corporation | Method for designating/sorting semiconductor wafers according to predicted oxygen precipitation behavior |
| US4851358A (en) * | 1988-02-11 | 1989-07-25 | Dns Electronic Materials, Inc. | Semiconductor wafer fabrication with improved control of internal gettering sites using rapid thermal annealing |
| EP0417197A4 (en) * | 1988-05-17 | 1992-07-08 | Xicor, Inc | Deposited tunneling oxide |
| JPH0226031A (ja) * | 1988-07-14 | 1990-01-29 | Toshiba Ceramics Co Ltd | シリコンウェーハ |
| DE3841352A1 (de) * | 1988-12-08 | 1990-06-21 | Philips Patentverwaltung | Verfahren zur herstellung eines maskentraegers aus sic fuer strahlungslithographie-masken |
| JPH02263792A (ja) * | 1989-03-31 | 1990-10-26 | Shin Etsu Handotai Co Ltd | シリコンの熱処理方法 |
| US5096839A (en) * | 1989-09-20 | 1992-03-17 | Kabushiki Kaisha Toshiba | Silicon wafer with defined interstitial oxygen concentration |
| JPH0777994B2 (ja) * | 1989-11-16 | 1995-08-23 | 信越半導体株式会社 | 単結晶の酸素濃度コントロール方法及び装置 |
| JP2588632B2 (ja) * | 1990-09-12 | 1997-03-05 | 富士通株式会社 | シリコン単結晶の酸素析出方法 |
| JPH0750713B2 (ja) * | 1990-09-21 | 1995-05-31 | コマツ電子金属株式会社 | 半導体ウェーハの熱処理方法 |
| IT1242014B (it) * | 1990-11-15 | 1994-02-02 | Memc Electronic Materials | Procedimento per il trattamento di fette di silicio per ottenere in esse profili di precipitazione controllati per la produzione di componenti elettronici. |
| EP0502471A3 (en) * | 1991-03-05 | 1995-10-11 | Fujitsu Ltd | Intrinsic gettering of a silicon substrate |
| JP2758093B2 (ja) * | 1991-10-07 | 1998-05-25 | 信越半導体株式会社 | 半導体ウェーハの製造方法 |
| CA2064486C (en) * | 1992-03-31 | 2001-08-21 | Alain Comeau | Method of preparing semiconductor wafer with good intrinsic gettering |
-
1995
- 1995-03-14 US US08/403,301 patent/US5593494A/en not_active Expired - Lifetime
- 1995-11-08 TW TW084111819A patent/TW344850B/zh not_active IP Right Cessation
-
1996
- 1996-03-08 EP EP96301616A patent/EP0732431B1/de not_active Expired - Lifetime
- 1996-03-08 DE DE69630328T patent/DE69630328T2/de not_active Expired - Lifetime
- 1996-03-13 JP JP8056054A patent/JPH08253392A/ja active Pending
- 1996-03-13 SG SG1996006358A patent/SG43246A1/en unknown
- 1996-03-13 KR KR1019960006755A patent/KR960035771A/ko not_active Application Discontinuation
- 1996-03-13 CN CN96100507A patent/CN1061705C/zh not_active Expired - Fee Related
- 1996-03-13 MY MYPI96000915A patent/MY115003A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| DE69630328T2 (de) | 2004-05-06 |
| EP0732431A1 (de) | 1996-09-18 |
| SG43246A1 (en) | 1997-10-17 |
| KR960035771A (ko) | 1996-10-28 |
| US5593494A (en) | 1997-01-14 |
| MY115003A (en) | 2003-03-31 |
| CN1061705C (zh) | 2001-02-07 |
| TW344850B (en) | 1998-11-11 |
| EP0732431B1 (de) | 2003-10-15 |
| JPH08253392A (ja) | 1996-10-01 |
| CN1136604A (zh) | 1996-11-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition |