DE69631233D1 - Verfahren zur Herstellung eines Halbleitersubstrats - Google Patents

Verfahren zur Herstellung eines Halbleitersubstrats

Info

Publication number
DE69631233D1
DE69631233D1 DE69631233T DE69631233T DE69631233D1 DE 69631233 D1 DE69631233 D1 DE 69631233D1 DE 69631233 T DE69631233 T DE 69631233T DE 69631233 T DE69631233 T DE 69631233T DE 69631233 D1 DE69631233 D1 DE 69631233D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor substrate
semiconductor
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69631233T
Other languages
English (en)
Other versions
DE69631233T2 (de
Inventor
Nobuhiko Sato
Takao Yonehara
Kiyofumi Sakaguchi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Publication of DE69631233D1 publication Critical patent/DE69631233D1/de
Application granted granted Critical
Publication of DE69631233T2 publication Critical patent/DE69631233T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02002—Preparing wafers
    • H01L21/02005—Preparing bulk and homogeneous wafers
    • H01L21/02032—Preparing bulk and homogeneous wafers by reclaiming or re-processing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3223—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering using cavities formed by hydrogen or noble gas ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3226—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering of silicon on insulator
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • H01L21/76259—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along a porous layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1892—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof methods involving the use of temporary, removable substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
DE69631233T 1995-10-06 1996-10-07 Verfahren zur Herstellung eines Halbleitersubstrats Expired - Lifetime DE69631233T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP26010095 1995-10-06
JP26010095 1995-10-06
JP26438696A JP3352340B2 (ja) 1995-10-06 1996-10-04 半導体基体とその製造方法
JP26438696 1996-10-04

Publications (2)

Publication Number Publication Date
DE69631233D1 true DE69631233D1 (de) 2004-02-05
DE69631233T2 DE69631233T2 (de) 2004-11-11

Family

ID=26544448

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69631233T Expired - Lifetime DE69631233T2 (de) 1995-10-06 1996-10-07 Verfahren zur Herstellung eines Halbleitersubstrats

Country Status (9)

Country Link
US (3) US5854123A (de)
EP (1) EP0767486B1 (de)
JP (1) JP3352340B2 (de)
KR (2) KR100291501B1 (de)
CN (1) CN1132223C (de)
CA (1) CA2187269C (de)
DE (1) DE69631233T2 (de)
SG (1) SG63669A1 (de)
TW (1) TW330307B (de)

Families Citing this family (438)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7148119B1 (en) 1994-03-10 2006-12-12 Canon Kabushiki Kaisha Process for production of semiconductor substrate
US20030087503A1 (en) * 1994-03-10 2003-05-08 Canon Kabushiki Kaisha Process for production of semiconductor substrate
US6326280B1 (en) 1995-02-02 2001-12-04 Sony Corporation Thin film semiconductor and method for making thin film semiconductor
US6107213A (en) * 1996-02-01 2000-08-22 Sony Corporation Method for making thin film semiconductor
TW374196B (en) 1996-02-23 1999-11-11 Semiconductor Energy Lab Co Ltd Semiconductor thin film and method for manufacturing the same and semiconductor device and method for manufacturing the same
US20050280155A1 (en) * 2004-06-21 2005-12-22 Sang-Yun Lee Semiconductor bonding and layer transfer method
US8018058B2 (en) * 2004-06-21 2011-09-13 Besang Inc. Semiconductor memory device
US8058142B2 (en) * 1996-11-04 2011-11-15 Besang Inc. Bonded semiconductor structure and method of making the same
FR2755537B1 (fr) * 1996-11-05 1999-03-05 Commissariat Energie Atomique Procede de fabrication d'un film mince sur un support et structure ainsi obtenue
SG65697A1 (en) * 1996-11-15 1999-06-22 Canon Kk Process for producing semiconductor article
EP0849788B1 (de) 1996-12-18 2004-03-10 Canon Kabushiki Kaisha Vefahren zum Herstellen eines Halbleiterartikels unter Verwendung eines Substrates mit einer porösen Halbleiterschicht
US6767840B1 (en) * 1997-02-21 2004-07-27 Canon Kabushiki Kaisha Wafer processing apparatus, wafer processing method, and semiconductor substrate fabrication method
CA2233096C (en) * 1997-03-26 2003-01-07 Canon Kabushiki Kaisha Substrate and production method thereof
SG71094A1 (en) 1997-03-26 2000-03-21 Canon Kk Thin film formation using laser beam heating to separate layers
US6143628A (en) * 1997-03-27 2000-11-07 Canon Kabushiki Kaisha Semiconductor substrate and method of manufacturing the same
JP3754818B2 (ja) * 1997-03-27 2006-03-15 キヤノン株式会社 半導体基板の作製方法
CA2233127C (en) 1997-03-27 2004-07-06 Canon Kabushiki Kaisha Method and apparatus for separating composite member using fluid
US6191007B1 (en) 1997-04-28 2001-02-20 Denso Corporation Method for manufacturing a semiconductor substrate
US6251754B1 (en) 1997-05-09 2001-06-26 Denso Corporation Semiconductor substrate manufacturing method
US20070122997A1 (en) 1998-02-19 2007-05-31 Silicon Genesis Corporation Controlled process and resulting device
US7470600B2 (en) * 1998-02-19 2008-12-30 Silicon Genesis Corporation Method and device for controlled cleaving process
US6291313B1 (en) 1997-05-12 2001-09-18 Silicon Genesis Corporation Method and device for controlled cleaving process
US5994207A (en) 1997-05-12 1999-11-30 Silicon Genesis Corporation Controlled cleavage process using pressurized fluid
US6033974A (en) 1997-05-12 2000-03-07 Silicon Genesis Corporation Method for controlled cleaving process
JP2976929B2 (ja) * 1997-05-30 1999-11-10 日本電気株式会社 半導体装置の製造方法
US6215244B1 (en) 1997-06-16 2001-04-10 Canon Kabushiki Kaisha Stacked organic light emitting device with specific electrode arrangement
US6645833B2 (en) 1997-06-30 2003-11-11 Max-Planck-Gesellschaft Zur Foerderung Der Wissenschaften E. V. Method for producing layered structures on a substrate, substrate and semiconductor components produced according to said method
DE19730975A1 (de) * 1997-06-30 1999-01-07 Max Planck Gesellschaft Verfahren zur Herstellung von schichtartigen Gebilden auf einem Substrat, Substrat sowie mittels des Verfahrens hergestellte Halbleiterbauelemente
KR100491272B1 (ko) * 1997-07-16 2005-08-01 페어차일드코리아반도체 주식회사 소이 기판의 제조 방법
US6548382B1 (en) 1997-07-18 2003-04-15 Silicon Genesis Corporation Gettering technique for wafers made using a controlled cleaving process
US6534380B1 (en) 1997-07-18 2003-03-18 Denso Corporation Semiconductor substrate and method of manufacturing the same
GB2343550A (en) 1997-07-29 2000-05-10 Silicon Genesis Corp Cluster tool method and apparatus using plasma immersion ion implantation
US5882987A (en) * 1997-08-26 1999-03-16 International Business Machines Corporation Smart-cut process for the production of thin semiconductor material films
JP2998724B2 (ja) 1997-11-10 2000-01-11 日本電気株式会社 張り合わせｓｏｉ基板の製造方法
US6686623B2 (en) 1997-11-18 2004-02-03 Semiconductor Energy Laboratory Co., Ltd. Nonvolatile memory and electronic apparatus
JPH11162859A (ja) * 1997-11-28 1999-06-18 Canon Inc シリコン結晶の液相成長方法及びそれを用いた太陽電池の製造方法
FR2773261B1 (fr) * 1997-12-30 2000-01-28 Commissariat Energie Atomique Procede pour le transfert d'un film mince comportant une etape de creation d'inclusions
JP4075021B2 (ja) * 1997-12-26 2008-04-16 ソニー株式会社 半導体基板の製造方法および薄膜半導体部材の製造方法
US6383890B2 (en) 1997-12-26 2002-05-07 Canon Kabushiki Kaisha Wafer bonding method, apparatus and vacuum chuck
JPH11195775A (ja) * 1997-12-26 1999-07-21 Sony Corp 半導体基板および薄膜半導体素子およびそれらの製造方法ならびに陽極化成装置
EP0926709A3 (de) 1997-12-26 2000-08-30 Canon Kabushiki Kaisha Herstellungsmethode einer SOI Struktur
JP3847935B2 (ja) * 1998-01-09 2006-11-22 キヤノン株式会社 多孔質領域の除去方法及び半導体基体の製造方法
DE19802131B4 (de) * 1998-01-21 2007-03-15 Robert Bosch Gmbh Verfahren zur Herstellung einer monokristallinen Schicht aus einem leitenden oder halbleitenden Material
FR2774214B1 (fr) * 1998-01-28 2002-02-08 Commissariat Energie Atomique PROCEDE DE REALISATION D'UNE STRUCTURE DE TYPE SEMI-CONDUCTEUR SUR ISOLANT ET EN PARTICULIER SiCOI
JP2002503825A (ja) * 1998-02-10 2002-02-05 インフィネオン テクノロジース アクチエンゲゼルシャフト 光学構造体および光学構造体を製造するための方法
US6120660A (en) * 1998-02-11 2000-09-19 Silicon Genesis Corporation Removable liner design for plasma immersion ion implantation
JPH11233769A (ja) 1998-02-12 1999-08-27 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
US6274459B1 (en) 1998-02-17 2001-08-14 Silicon Genesis Corporation Method for non mass selected ion implant profile control
TW437078B (en) * 1998-02-18 2001-05-28 Canon Kk Composite member, its separation method, and preparation method of semiconductor substrate by utilization thereof
JP3809733B2 (ja) 1998-02-25 2006-08-16 セイコーエプソン株式会社 薄膜トランジスタの剥離方法
US6113735A (en) * 1998-03-02 2000-09-05 Silicon Genesis Corporation Distributed system and code for control and automation of plasma immersion ion implanter
JPH11251207A (ja) * 1998-03-03 1999-09-17 Canon Inc Ｓｏｉ基板及びその製造方法並びにその製造設備
US6540861B2 (en) 1998-04-01 2003-04-01 Canon Kabushiki Kaisha Member separating apparatus and processing apparatus
JPH11307747A (ja) * 1998-04-17 1999-11-05 Nec Corp Ｓｏｉ基板およびその製造方法
JPH11307472A (ja) * 1998-04-23 1999-11-05 Shin Etsu Handotai Co Ltd 水素イオン剥離法によってｓｏｉウエーハを製造する方法およびこの方法で製造されたｓｏｉウエーハ
JP3697106B2 (ja) * 1998-05-15 2005-09-21 キヤノン株式会社 半導体基板の作製方法及び半導体薄膜の作製方法
JP2000012864A (ja) * 1998-06-22 2000-01-14 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
US6291326B1 (en) 1998-06-23 2001-09-18 Silicon Genesis Corporation Pre-semiconductor process implant and post-process film separation
JP3358550B2 (ja) * 1998-07-07 2002-12-24 信越半導体株式会社 Ｓｏｉウエーハの製造方法ならびにこの方法で製造されるｓｏｉウエーハ
TW444266B (en) 1998-07-23 2001-07-01 Canon Kk Semiconductor substrate and method of producing same
US6271101B1 (en) * 1998-07-29 2001-08-07 Semiconductor Energy Laboratory Co., Ltd. Process for production of SOI substrate and process for production of semiconductor device
US6124214A (en) * 1998-08-27 2000-09-26 Micron Technology, Inc. Method and apparatus for ultrasonic wet etching of silicon
JP4476390B2 (ja) 1998-09-04 2010-06-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2000164905A (ja) 1998-09-22 2000-06-16 Canon Inc 光電変換装置の製造方法とその製造装置
WO2000019500A1 (fr) * 1998-09-25 2000-04-06 Asahi Kasei Kabushiki Kaisha Substrat a semi-conducteur et son procede de fabrication, dispositif a semi-conducteur comprenant un tel substrat et son procede de fabrication
US6555443B1 (en) * 1998-11-11 2003-04-29 Robert Bosch Gmbh Method for production of a thin film and a thin-film solar cell, in particular, on a carrier substrate
JP2000349264A (ja) 1998-12-04 2000-12-15 Canon Inc 半導体ウエハの製造方法、使用方法および利用方法
US20040229443A1 (en) * 1998-12-31 2004-11-18 Bower Robert W. Structures, materials and methods for fabrication of nanostructures by transposed split of ion cut materials
JP4313874B2 (ja) * 1999-02-02 2009-08-12 キヤノン株式会社 基板の製造方法
FR2789518B1 (fr) * 1999-02-10 2003-06-20 Commissariat Energie Atomique Structure multicouche a contraintes internes controlees et procede de realisation d'une telle structure
JP2000277478A (ja) * 1999-03-25 2000-10-06 Canon Inc 陽極化成装置、陽極化成システム、基板の処理装置及び処理方法、並びに基板の製造方法
US6375738B1 (en) 1999-03-26 2002-04-23 Canon Kabushiki Kaisha Process of producing semiconductor article
US6326279B1 (en) 1999-03-26 2001-12-04 Canon Kabushiki Kaisha Process for producing semiconductor article
US6355541B1 (en) * 1999-04-21 2002-03-12 Lockheed Martin Energy Research Corporation Method for transfer of thin-film of silicon carbide via implantation and wafer bonding
US6204151B1 (en) 1999-04-21 2001-03-20 Silicon Genesis Corporation Smoothing method for cleaved films made using thermal treatment
US6881644B2 (en) * 1999-04-21 2005-04-19 Silicon Genesis Corporation Smoothing method for cleaved films made using a release layer
US6287941B1 (en) 1999-04-21 2001-09-11 Silicon Genesis Corporation Surface finishing of SOI substrates using an EPI process
US6171965B1 (en) 1999-04-21 2001-01-09 Silicon Genesis Corporation Treatment method of cleaved film for the manufacture of substrates
JP2001015721A (ja) * 1999-04-30 2001-01-19 Canon Inc 複合部材の分離方法及び薄膜の製造方法
US6248642B1 (en) 1999-06-24 2001-06-19 Ibis Technology Corporation SIMOX using controlled water vapor for oxygen implants
FR2795866B1 (fr) * 1999-06-30 2001-08-17 Commissariat Energie Atomique Procede de realisation d'une membrane mince et structure a membrane ainsi obtenue
US6221740B1 (en) 1999-08-10 2001-04-24 Silicon Genesis Corporation Substrate cleaving tool and method
US6263941B1 (en) 1999-08-10 2001-07-24 Silicon Genesis Corporation Nozzle for cleaving substrates
JP2003506883A (ja) 1999-08-10 2003-02-18 シリコン ジェネシス コーポレイション 低打ち込みドーズ量を用いて多層基板を製造するための劈開プロセス
US6500732B1 (en) 1999-08-10 2002-12-31 Silicon Genesis Corporation Cleaving process to fabricate multilayered substrates using low implantation doses
US6433342B1 (en) 1999-08-18 2002-08-13 Ibis Technology Corporation Coated wafer holding pin
US6423975B1 (en) 1999-08-18 2002-07-23 Ibis Technology, Inc. Wafer holder for simox processing
US6155436A (en) * 1999-08-18 2000-12-05 Ibis Technology Corporation Arc inhibiting wafer holder assembly
US6452195B1 (en) 1999-08-18 2002-09-17 Ibis Technology Corporation Wafer holding pin
US6984571B1 (en) 1999-10-01 2006-01-10 Ziptronix, Inc. Three dimensional device integration method and integrated device
TW508690B (en) 1999-12-08 2002-11-01 Canon Kk Composite member separating method, thin film manufacturing method, and composite member separating apparatus
US7427526B2 (en) * 1999-12-20 2008-09-23 The Penn State Research Foundation Deposited thin films and their use in separation and sacrificial layer applications
US6544862B1 (en) * 2000-01-14 2003-04-08 Silicon Genesis Corporation Particle distribution method and resulting structure for a layer transfer process
US6602767B2 (en) 2000-01-27 2003-08-05 Canon Kabushiki Kaisha Method for transferring porous layer, method for making semiconductor devices, and method for making solar battery
US6902987B1 (en) * 2000-02-16 2005-06-07 Ziptronix, Inc. Method for low temperature bonding and bonded structure
WO2001080308A2 (fr) * 2000-04-14 2001-10-25 S.O.I.Tec Silicon On Insulator Technologies Procede pour la decoupe d'au moins une couche mince dans un substrat ou lingot, notamment en materiau(x) semi-conducteur(s)
JP2002015971A (ja) * 2000-06-27 2002-01-18 Matsushita Electric Ind Co Ltd パターン形成方法及び半導体装置の製造装置
FR2811807B1 (fr) * 2000-07-12 2003-07-04 Commissariat Energie Atomique Procede de decoupage d'un bloc de materiau et de formation d'un film mince
US6563133B1 (en) * 2000-08-09 2003-05-13 Ziptronix, Inc. Method of epitaxial-like wafer bonding at low temperature and bonded structure
US6420243B1 (en) * 2000-12-04 2002-07-16 Motorola, Inc. Method for producing SOI wafers by delamination
FR2818010B1 (fr) * 2000-12-08 2003-09-05 Commissariat Energie Atomique Procede de realisation d'une couche mince impliquant l'introduction d'especes gazeuses
EP1220330B1 (de) * 2000-12-21 2012-03-14 Imec Verfahren zur Herstellung einer Halbleiterschicht auf ein Substrat
EP1217663A1 (de) * 2000-12-21 2002-06-26 Interuniversitair Micro-Elektronica Centrum Herstellungsverfahren einer Halbleiterschicht auf einem Substrat
US6602760B2 (en) 2000-12-21 2003-08-05 Interuniversitair Microelektronica Centrum (Imec) Method of producing a semiconductor layer on a substrate
US7101772B2 (en) * 2000-12-30 2006-09-05 Texas Instruments Incorporated Means for forming SOI
US6774010B2 (en) 2001-01-25 2004-08-10 International Business Machines Corporation Transferable device-containing layer for silicon-on-insulator applications
JP4803884B2 (ja) * 2001-01-31 2011-10-26 キヤノン株式会社 薄膜半導体装置の製造方法
JP5088993B2 (ja) * 2001-02-16 2012-12-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4993810B2 (ja) * 2001-02-16 2012-08-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
FR2821697B1 (fr) * 2001-03-02 2004-06-25 Commissariat Energie Atomique Procede de fabrication de couches minces sur un support specifique et une application
FR2823596B1 (fr) 2001-04-13 2004-08-20 Commissariat Energie Atomique Substrat ou structure demontable et procede de realisation
FR2823599B1 (fr) 2001-04-13 2004-12-17 Commissariat Energie Atomique Substrat demomtable a tenue mecanique controlee et procede de realisation
DE10131249A1 (de) * 2001-06-28 2002-05-23 Wacker Siltronic Halbleitermat Verfahren zur Herstellung eines Films oder einer Schicht aus halbleitendem Material
FR2830983B1 (fr) 2001-10-11 2004-05-14 Commissariat Energie Atomique Procede de fabrication de couches minces contenant des microcomposants
US8108249B2 (en) * 2001-12-04 2012-01-31 Kimberly-Clark Worldwide, Inc. Business planner
AU2003205104A1 (en) * 2002-01-11 2003-07-30 The Pennsylvania State University Method of forming a removable support with a sacrificial layers and of transferring devices
AU2003215202A1 (en) * 2002-02-13 2003-09-04 The Regents Of The University Of California A multilayer structure to form an active matrix display having single crystalline drivers over a transmissive substrate
AU2003281180A1 (en) * 2002-07-11 2004-02-02 Sumitomo Electric Industries, Ltd. Porous semiconductor and process for producing the same
EP1385199A1 (de) 2002-07-24 2004-01-28 IMEC vzw, Interuniversitair Microelectronica Centrum vzw Verfahren zur Herstellung von Dünnfilmelementen für Solarzellen oder SOI Anwendungen
US7008857B2 (en) * 2002-08-26 2006-03-07 S.O.I.Tec Silicon On Insulator Technologies S.A. Recycling a wafer comprising a buffer layer, after having separated a thin layer therefrom
CN100557785C (zh) * 2002-08-26 2009-11-04 S.O.I.Tec绝缘体上硅技术公司 具有缓冲结构的晶片的再循环
JP2004103600A (ja) * 2002-09-04 2004-04-02 Canon Inc 基板及びその製造方法
EP1396883A3 (de) * 2002-09-04 2005-11-30 Canon Kabushiki Kaisha Substrat und Herstellungsverfahren dafür
JP2004103855A (ja) * 2002-09-10 2004-04-02 Canon Inc 基板及びその製造方法
JP2004103946A (ja) * 2002-09-11 2004-04-02 Canon Inc 基板及びその製造方法
US8187377B2 (en) 2002-10-04 2012-05-29 Silicon Genesis Corporation Non-contact etch annealing of strained layers
FR2847075B1 (fr) * 2002-11-07 2005-02-18 Commissariat Energie Atomique Procede de formation d'une zone fragile dans un substrat par co-implantation
US7176108B2 (en) 2002-11-07 2007-02-13 Soitec Silicon On Insulator Method of detaching a thin film at moderate temperature after co-implantation
FR2848336B1 (fr) * 2002-12-09 2005-10-28 Commissariat Energie Atomique Procede de realisation d'une structure contrainte destinee a etre dissociee
FR2849269B1 (fr) * 2002-12-20 2005-07-29 Soitec Silicon On Insulator Procede de realisation de cavites dans une plaque de silicium
US20040124088A1 (en) * 2002-12-26 2004-07-01 Canon Kabushiki Kaisha Processing apparatus
US20100133695A1 (en) * 2003-01-12 2010-06-03 Sang-Yun Lee Electronic circuit with embedded memory
US7176528B2 (en) * 2003-02-18 2007-02-13 Corning Incorporated Glass-based SOI structures
US7399681B2 (en) * 2003-02-18 2008-07-15 Corning Incorporated Glass-based SOI structures
KR100743821B1 (ko) * 2003-02-25 2007-07-30 가부시키가이샤 섬코 실리콘 단결정 육성 방법, 실리콘 웨이퍼 제조 방법 및 ｓｏｉ 기판 제조 방법
JP4794810B2 (ja) * 2003-03-20 2011-10-19 シャープ株式会社 半導体装置の製造方法
JP2004335662A (ja) * 2003-05-06 2004-11-25 Canon Inc 部材及び部材の製造方法
US7622363B2 (en) 2003-05-06 2009-11-24 Canon Kabushiki Kaisha Semiconductor substrate, semiconductor device, light emitting diode and producing method therefor
US7109092B2 (en) 2003-05-19 2006-09-19 Ziptronix, Inc. Method of room temperature covalent bonding
FR2855910B1 (fr) * 2003-06-06 2005-07-15 Commissariat Energie Atomique Procede d'obtention d'une couche tres mince par amincissement par auto-portage provoque
FR2856192B1 (fr) * 2003-06-11 2005-07-29 Soitec Silicon On Insulator Procede de realisation de structure heterogene et structure obtenue par un tel procede
US8071438B2 (en) * 2003-06-24 2011-12-06 Besang Inc. Semiconductor circuit
FR2856844B1 (fr) 2003-06-24 2006-02-17 Commissariat Energie Atomique Circuit integre sur puce de hautes performances
US20100190334A1 (en) * 2003-06-24 2010-07-29 Sang-Yun Lee Three-dimensional semiconductor structure and method of manufacturing the same
FR2857953B1 (fr) 2003-07-21 2006-01-13 Commissariat Energie Atomique Structure empilee, et procede pour la fabriquer
US7091108B2 (en) * 2003-09-11 2006-08-15 Intel Corporation Methods and apparatuses for manufacturing ultra thin device layers for integrated circuit devices
US8475693B2 (en) 2003-09-30 2013-07-02 Soitec Methods of making substrate structures having a weakened intermediate layer
FR2860249B1 (fr) 2003-09-30 2005-12-09 Michel Bruel Procede de fabrication d'une structure en forme de plaque, en particulier en silicium, application de procede, et structure en forme de plaque, en particulier en silicium
US7566482B2 (en) * 2003-09-30 2009-07-28 International Business Machines Corporation SOI by oxidation of porous silicon
US7718231B2 (en) * 2003-09-30 2010-05-18 International Business Machines Corporation Thin buried oxides by low-dose oxygen implantation into modified silicon
FR2861497B1 (fr) 2003-10-28 2006-02-10 Soitec Silicon On Insulator Procede de transfert catastrophique d'une couche fine apres co-implantation
US7542197B2 (en) * 2003-11-01 2009-06-02 Silicon Quest Kabushiki-Kaisha Spatial light modulator featured with an anti-reflective structure
AU2003297191A1 (en) * 2003-12-16 2005-07-14 International Business Machines Corporation Contoured insulator layer of silicon-on-onsulator wafers and process of manufacture
US7772087B2 (en) * 2003-12-19 2010-08-10 Commissariat A L'energie Atomique Method of catastrophic transfer of a thin film after co-implantation
KR101140450B1 (ko) 2004-08-18 2012-04-30 코닝 인코포레이티드 변형된 반도체-온-절연체 구조 및 변형된 반도체-온-절연체구조의 제조방법
US7473969B2 (en) * 2004-08-18 2009-01-06 Corning Incorporated High strain glass/glass-ceramic containing semiconductor-on-insulator structures
EP1962340A3 (de) 2004-11-09 2009-12-23 S.O.I. TEC Silicon Verfahren zur Herstellung von zusammengesetzten Wafern
US7402520B2 (en) * 2004-11-26 2008-07-22 Applied Materials, Inc. Edge removal of silicon-on-insulator transfer wafer
US7378331B2 (en) * 2004-12-29 2008-05-27 Intel Corporation Methods of vertically stacking wafers using porous silicon
US8367524B2 (en) * 2005-03-29 2013-02-05 Sang-Yun Lee Three-dimensional integrated circuit structure
US20110143506A1 (en) * 2009-12-10 2011-06-16 Sang-Yun Lee Method for fabricating a semiconductor memory device
US7410883B2 (en) * 2005-04-13 2008-08-12 Corning Incorporated Glass-based semiconductor on insulator structures and methods of making same
US20060240275A1 (en) * 2005-04-25 2006-10-26 Gadkaree Kishor P Flexible display substrates
FR2886051B1 (fr) 2005-05-20 2007-08-10 Commissariat Energie Atomique Procede de detachement d'un film mince
FR2889887B1 (fr) 2005-08-16 2007-11-09 Commissariat Energie Atomique Procede de report d'une couche mince sur un support
US7268051B2 (en) * 2005-08-26 2007-09-11 Corning Incorporated Semiconductor on glass insulator with deposited barrier layer
CN100391826C (zh) * 2005-09-09 2008-06-04 华东师范大学 一种硅的微通道制作方法
FR2891281B1 (fr) 2005-09-28 2007-12-28 Commissariat Energie Atomique Procede de fabrication d'un element en couches minces.
US7456080B2 (en) * 2005-12-19 2008-11-25 Corning Incorporated Semiconductor on glass insulator made using improved ion implantation process
EP1981065B1 (de) * 2005-12-27 2014-12-03 Shin-Etsu Chemical Company, Ltd. Prozess zum herstellen eines soi-wafers
DE102006007293B4 (de) * 2006-01-31 2023-04-06 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zum Herstellen eines Quasi-Substratwafers und ein unter Verwendung eines solchen Quasi-Substratwafers hergestellter Halbleiterkörper
DE102006013313A1 (de) * 2006-03-21 2007-09-27 Institut Für Solarenergieforschung Gmbh Verfahren zur Erzeugung eines gezielt dotierten Bereichs in einer Halbleiterschicht unter Verwendung von Aus-Diffusion und entsprechendes Halbleiterbauelement
FR2899378B1 (fr) * 2006-03-29 2008-06-27 Commissariat Energie Atomique Procede de detachement d'un film mince par fusion de precipites
DE102006028783B4 (de) * 2006-06-23 2014-09-18 Robert Bosch Gmbh Poröser Siliziumkörper mit schichtartigem Aufbau, Verfahren zu dessen Herstellung sowie Verwendung desselben
US8293619B2 (en) 2008-08-28 2012-10-23 Silicon Genesis Corporation Layer transfer of films utilizing controlled propagation
US8993410B2 (en) 2006-09-08 2015-03-31 Silicon Genesis Corporation Substrate cleaving under controlled stress conditions
US9362439B2 (en) 2008-05-07 2016-06-07 Silicon Genesis Corporation Layer transfer of films utilizing controlled shear region
US7811900B2 (en) 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
TWI570900B (zh) 2006-09-29 2017-02-11 半導體能源研究所股份有限公司 半導體裝置的製造方法
US8137417B2 (en) 2006-09-29 2012-03-20 Semiconductor Energy Laboratory Co., Ltd. Peeling apparatus and manufacturing apparatus of semiconductor device
US7642934B2 (en) * 2006-11-10 2010-01-05 Research In Motion Limited Method of mapping a traditional touchtone keypad on a handheld electronic device and associated apparatus
JP4770706B2 (ja) * 2006-11-13 2011-09-14 ソニー株式会社 薄膜半導体の製造方法
FR2910179B1 (fr) 2006-12-19 2009-03-13 Commissariat Energie Atomique PROCEDE DE FABRICATION DE COUCHES MINCES DE GaN PAR IMPLANTATION ET RECYCLAGE D'UN SUBSTRAT DE DEPART
JP2007201502A (ja) * 2007-04-20 2007-08-09 Semiconductor Energy Lab Co Ltd 半導体装置およびその作製方法
EP1986230A2 (de) * 2007-04-25 2008-10-29 Semiconductor Energy Laboratory Co., Ltd. Verfahren zur Herstellung eines SOI-Substrats und Verfahren zur Herstellung einer Halbleitervorrichtung
JP5463017B2 (ja) * 2007-09-21 2014-04-09 株式会社半導体エネルギー研究所 基板の作製方法
FR2922681A1 (fr) * 2007-10-23 2009-04-24 Soitec Silicon On Insulator Procede de detachement d'un substrat.
JP5248995B2 (ja) 2007-11-30 2013-07-31 株式会社半導体エネルギー研究所 光電変換装置の製造方法
JP5248994B2 (ja) * 2007-11-30 2013-07-31 株式会社半導体エネルギー研究所 光電変換装置の製造方法
FR2925221B1 (fr) 2007-12-17 2010-02-19 Commissariat Energie Atomique Procede de transfert d'une couche mince
US8288184B2 (en) * 2007-12-18 2012-10-16 Sharp Kabushiki Kaisha Production method of semiconductor device and semiconductor device
JP5572307B2 (ja) * 2007-12-28 2014-08-13 株式会社半導体エネルギー研究所 光電変換装置の製造方法
FR2929444B1 (fr) * 2008-03-31 2010-08-20 Commissariat Energie Atomique Procede de fabrication d'une structure micro-electronique du type a semi-conducteur sur isolant et a motifs differencies, et structure ainsi obtenue.
US7749884B2 (en) * 2008-05-06 2010-07-06 Astrowatt, Inc. Method of forming an electronic device using a separation-enhancing species
US8623137B1 (en) 2008-05-07 2014-01-07 Silicon Genesis Corporation Method and device for slicing a shaped silicon ingot using layer transfer
WO2009143026A2 (en) * 2008-05-17 2009-11-26 Astrowatt, Inc. Method of forming an electronic device using a separation technique
US7951656B2 (en) * 2008-06-06 2011-05-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8338218B2 (en) * 2008-06-26 2012-12-25 Semiconductor Energy Laboratory Co., Ltd. Photoelectric conversion device module and manufacturing method of the photoelectric conversion device module
EP2157602A1 (de) * 2008-08-20 2010-02-24 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Verfahren zur Herstellung einer Vielzahl von Herstellungs-Wafern
US8330126B2 (en) 2008-08-25 2012-12-11 Silicon Genesis Corporation Race track configuration and method for wafering silicon solar substrates
SG160302A1 (en) * 2008-09-29 2010-04-29 Semiconductor Energy Lab Method for manufacturing semiconductor substrate
US8871610B2 (en) * 2008-10-02 2014-10-28 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing SOI substrate
JP2010114409A (ja) * 2008-10-10 2010-05-20 Sony Corp Ｓｏｉ基板とその製造方法、固体撮像装置とその製造方法、および撮像装置
JP4489823B2 (ja) * 2008-10-29 2010-06-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5478199B2 (ja) * 2008-11-13 2014-04-23 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5586920B2 (ja) * 2008-11-20 2014-09-10 株式会社半導体エネルギー研究所 フレキシブル半導体装置の作製方法
US9577642B2 (en) 2009-04-14 2017-02-21 Monolithic 3D Inc. Method to form a 3D semiconductor device
US8362800B2 (en) 2010-10-13 2013-01-29 Monolithic 3D Inc. 3D semiconductor device including field repairable logics
US8058137B1 (en) 2009-04-14 2011-11-15 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US9711407B2 (en) 2009-04-14 2017-07-18 Monolithic 3D Inc. Method of manufacturing a three dimensional integrated circuit by transfer of a mono-crystalline layer
US8405420B2 (en) 2009-04-14 2013-03-26 Monolithic 3D Inc. System comprising a semiconductor device and structure
US8362482B2 (en) 2009-04-14 2013-01-29 Monolithic 3D Inc. Semiconductor device and structure
US9509313B2 (en) 2009-04-14 2016-11-29 Monolithic 3D Inc. 3D semiconductor device
US8427200B2 (en) 2009-04-14 2013-04-23 Monolithic 3D Inc. 3D semiconductor device
US8395191B2 (en) 2009-10-12 2013-03-12 Monolithic 3D Inc. Semiconductor device and structure
US8384426B2 (en) 2009-04-14 2013-02-26 Monolithic 3D Inc. Semiconductor device and structure
US7986042B2 (en) 2009-04-14 2011-07-26 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US8754533B2 (en) 2009-04-14 2014-06-17 Monolithic 3D Inc. Monolithic three-dimensional semiconductor device and structure
US8373439B2 (en) 2009-04-14 2013-02-12 Monolithic 3D Inc. 3D semiconductor device
US8378715B2 (en) 2009-04-14 2013-02-19 Monolithic 3D Inc. Method to construct systems
US8669778B1 (en) 2009-04-14 2014-03-11 Monolithic 3D Inc. Method for design and manufacturing of a 3D semiconductor device
US8329557B2 (en) 2009-05-13 2012-12-11 Silicon Genesis Corporation Techniques for forming thin films by implantation with reduced channeling
US20110048517A1 (en) * 2009-06-09 2011-03-03 International Business Machines Corporation Multijunction Photovoltaic Cell Fabrication
US8703521B2 (en) 2009-06-09 2014-04-22 International Business Machines Corporation Multijunction photovoltaic cell fabrication
US8802477B2 (en) * 2009-06-09 2014-08-12 International Business Machines Corporation Heterojunction III-V photovoltaic cell fabrication
US8633097B2 (en) 2009-06-09 2014-01-21 International Business Machines Corporation Single-junction photovoltaic cell
US20100310775A1 (en) * 2009-06-09 2010-12-09 International Business Machines Corporation Spalling for a Semiconductor Substrate
FR2947098A1 (fr) 2009-06-18 2010-12-24 Commissariat Energie Atomique Procede de transfert d'une couche mince sur un substrat cible ayant un coefficient de dilatation thermique different de celui de la couche mince
US9847243B2 (en) 2009-08-27 2017-12-19 Corning Incorporated Debonding a glass substrate from carrier using ultrasonic wave
US10043781B2 (en) 2009-10-12 2018-08-07 Monolithic 3D Inc. 3D semiconductor device and structure
US8742476B1 (en) 2012-11-27 2014-06-03 Monolithic 3D Inc. Semiconductor device and structure
US8148728B2 (en) 2009-10-12 2012-04-03 Monolithic 3D, Inc. Method for fabrication of a semiconductor device and structure
US10157909B2 (en) 2009-10-12 2018-12-18 Monolithic 3D Inc. 3D semiconductor device and structure
US8536023B2 (en) 2010-11-22 2013-09-17 Monolithic 3D Inc. Method of manufacturing a semiconductor device and structure
US11018133B2 (en) 2009-10-12 2021-05-25 Monolithic 3D Inc. 3D integrated circuit
US10388863B2 (en) 2009-10-12 2019-08-20 Monolithic 3D Inc. 3D memory device and structure
US10366970B2 (en) 2009-10-12 2019-07-30 Monolithic 3D Inc. 3D semiconductor device and structure
US11374118B2 (en) 2009-10-12 2022-06-28 Monolithic 3D Inc. Method to form a 3D integrated circuit
US8581349B1 (en) 2011-05-02 2013-11-12 Monolithic 3D Inc. 3D memory semiconductor device and structure
US10910364B2 (en) 2009-10-12 2021-02-02 Monolitaic 3D Inc. 3D semiconductor device
US10354995B2 (en) 2009-10-12 2019-07-16 Monolithic 3D Inc. Semiconductor memory device and structure
US9099424B1 (en) 2012-08-10 2015-08-04 Monolithic 3D Inc. Semiconductor system, device and structure with heat removal
US8476145B2 (en) 2010-10-13 2013-07-02 Monolithic 3D Inc. Method of fabricating a semiconductor device and structure
US8450804B2 (en) 2011-03-06 2013-05-28 Monolithic 3D Inc. Semiconductor device and structure for heat removal
JP4642130B2 (ja) * 2009-10-30 2011-03-02 株式会社半導体エネルギー研究所 ガラス基板上に単結晶シリコン薄膜を形成する方法
US7986022B2 (en) * 2009-11-19 2011-07-26 International Business Machines Corporation Semispherical integrated circuit structures
JP5706670B2 (ja) 2009-11-24 2015-04-22 株式会社半導体エネルギー研究所 Ｓｏｉ基板の作製方法
US8492886B2 (en) 2010-02-16 2013-07-23 Monolithic 3D Inc 3D integrated circuit with logic
US9099526B2 (en) 2010-02-16 2015-08-04 Monolithic 3D Inc. Integrated circuit device and structure
US8026521B1 (en) 2010-10-11 2011-09-27 Monolithic 3D Inc. Semiconductor device and structure
US8461035B1 (en) 2010-09-30 2013-06-11 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US8541819B1 (en) 2010-12-09 2013-09-24 Monolithic 3D Inc. Semiconductor device and structure
US8373230B1 (en) 2010-10-13 2013-02-12 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US20110207306A1 (en) * 2010-02-22 2011-08-25 Sarko Cherekdjian Semiconductor structure made using improved ion implantation process
JP5709579B2 (ja) * 2010-03-02 2015-04-30 株式会社半導体エネルギー研究所 微結晶半導体膜の作製方法
KR101134819B1 (ko) 2010-07-02 2012-04-13 이상윤 반도체 메모리 장치의 제조 방법
US9219005B2 (en) 2011-06-28 2015-12-22 Monolithic 3D Inc. Semiconductor system and device
US8901613B2 (en) 2011-03-06 2014-12-02 Monolithic 3D Inc. Semiconductor device and structure for heat removal
US9953925B2 (en) 2011-06-28 2018-04-24 Monolithic 3D Inc. Semiconductor system and device
US8642416B2 (en) 2010-07-30 2014-02-04 Monolithic 3D Inc. Method of forming three dimensional integrated circuit devices using layer transfer technique
US10217667B2 (en) 2011-06-28 2019-02-26 Monolithic 3D Inc. 3D semiconductor device, fabrication method and system
DE102011050136A1 (de) * 2010-09-03 2012-03-08 Schott Solar Ag Verfahren zum nasschemischen Ätzen einer Siliziumschicht
JP4693938B2 (ja) * 2010-09-16 2011-06-01 株式会社半導体エネルギー研究所 半導体装置の作製方法
US11482440B2 (en) 2010-12-16 2022-10-25 Monolithic 3D Inc. 3D semiconductor device and structure with a built-in test circuit for repairing faulty circuits
US10497713B2 (en) 2010-11-18 2019-12-03 Monolithic 3D Inc. 3D semiconductor memory device and structure
US8163581B1 (en) 2010-10-13 2012-04-24 Monolith IC 3D Semiconductor and optoelectronic devices
US8273610B2 (en) 2010-11-18 2012-09-25 Monolithic 3D Inc. Method of constructing a semiconductor device and structure
US11024673B1 (en) 2010-10-11 2021-06-01 Monolithic 3D Inc. 3D semiconductor device and structure
US11600667B1 (en) 2010-10-11 2023-03-07 Monolithic 3D Inc. Method to produce 3D semiconductor devices and structures with memory
US11315980B1 (en) 2010-10-11 2022-04-26 Monolithic 3D Inc. 3D semiconductor device and structure with transistors
US8114757B1 (en) 2010-10-11 2012-02-14 Monolithic 3D Inc. Semiconductor device and structure
US11257867B1 (en) 2010-10-11 2022-02-22 Monolithic 3D Inc. 3D semiconductor device and structure with oxide bonds
US11018191B1 (en) 2010-10-11 2021-05-25 Monolithic 3D Inc. 3D semiconductor device and structure
US10290682B2 (en) 2010-10-11 2019-05-14 Monolithic 3D Inc. 3D IC semiconductor device and structure with stacked memory
US11469271B2 (en) 2010-10-11 2022-10-11 Monolithic 3D Inc. Method to produce 3D semiconductor devices and structures with memory
US10896931B1 (en) 2010-10-11 2021-01-19 Monolithic 3D Inc. 3D semiconductor device and structure
US11227897B2 (en) 2010-10-11 2022-01-18 Monolithic 3D Inc. Method for producing a 3D semiconductor memory device and structure
US11158674B2 (en) 2010-10-11 2021-10-26 Monolithic 3D Inc. Method to produce a 3D semiconductor device and structure
US10679977B2 (en) 2010-10-13 2020-06-09 Monolithic 3D Inc. 3D microdisplay device and structure
US11163112B2 (en) 2010-10-13 2021-11-02 Monolithic 3D Inc. Multilevel semiconductor device and structure with electromagnetic modulators
US10978501B1 (en) 2010-10-13 2021-04-13 Monolithic 3D Inc. Multilevel semiconductor device and structure with waveguides
US11327227B2 (en) 2010-10-13 2022-05-10 Monolithic 3D Inc. Multilevel semiconductor device and structure with electromagnetic modulators
US11929372B2 (en) 2010-10-13 2024-03-12 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
US11869915B2 (en) 2010-10-13 2024-01-09 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
US11063071B1 (en) 2010-10-13 2021-07-13 Monolithic 3D Inc. Multilevel semiconductor device and structure with waveguides
US11694922B2 (en) 2010-10-13 2023-07-04 Monolithic 3D Inc. Multilevel semiconductor device and structure with oxide bonding
US11855100B2 (en) 2010-10-13 2023-12-26 Monolithic 3D Inc. Multilevel semiconductor device and structure with oxide bonding
US10943934B2 (en) 2010-10-13 2021-03-09 Monolithic 3D Inc. Multilevel semiconductor device and structure
US10998374B1 (en) 2010-10-13 2021-05-04 Monolithic 3D Inc. Multilevel semiconductor device and structure
US11043523B1 (en) 2010-10-13 2021-06-22 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors
US8379458B1 (en) 2010-10-13 2013-02-19 Monolithic 3D Inc. Semiconductor device and structure
US11437368B2 (en) 2010-10-13 2022-09-06 Monolithic 3D Inc. Multilevel semiconductor device and structure with oxide bonding
US11855114B2 (en) 2010-10-13 2023-12-26 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
US9197804B1 (en) 2011-10-14 2015-11-24 Monolithic 3D Inc. Semiconductor and optoelectronic devices
US11605663B2 (en) 2010-10-13 2023-03-14 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors and wafer bonding
US11133344B2 (en) 2010-10-13 2021-09-28 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors
US11164898B2 (en) 2010-10-13 2021-11-02 Monolithic 3D Inc. Multilevel semiconductor device and structure
US10833108B2 (en) 2010-10-13 2020-11-10 Monolithic 3D Inc. 3D microdisplay device and structure
US11404466B2 (en) 2010-10-13 2022-08-02 Monolithic 3D Inc. Multilevel semiconductor device and structure with image sensors
US11031275B2 (en) 2010-11-18 2021-06-08 Monolithic 3D Inc. 3D semiconductor device and structure with memory
US11018042B1 (en) 2010-11-18 2021-05-25 Monolithic 3D Inc. 3D semiconductor memory device and structure
US11901210B2 (en) 2010-11-18 2024-02-13 Monolithic 3D Inc. 3D semiconductor device and structure with memory
US11355380B2 (en) 2010-11-18 2022-06-07 Monolithic 3D Inc. Methods for producing 3D semiconductor memory device and structure utilizing alignment marks
US11854857B1 (en) 2010-11-18 2023-12-26 Monolithic 3D Inc. Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
US11862503B2 (en) 2010-11-18 2024-01-02 Monolithic 3D Inc. Method for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
US11784082B2 (en) 2010-11-18 2023-10-10 Monolithic 3D Inc. 3D semiconductor device and structure with bonding
US11121021B2 (en) 2010-11-18 2021-09-14 Monolithic 3D Inc. 3D semiconductor device and structure
US11508605B2 (en) 2010-11-18 2022-11-22 Monolithic 3D Inc. 3D semiconductor memory device and structure
US11610802B2 (en) 2010-11-18 2023-03-21 Monolithic 3D Inc. Method for producing a 3D semiconductor device and structure with single crystal transistors and metal gate electrodes
US11107721B2 (en) 2010-11-18 2021-08-31 Monolithic 3D Inc. 3D semiconductor device and structure with NAND logic
US11094576B1 (en) 2010-11-18 2021-08-17 Monolithic 3D Inc. Methods for producing a 3D semiconductor memory device and structure
US11521888B2 (en) 2010-11-18 2022-12-06 Monolithic 3D Inc. 3D semiconductor device and structure with high-k metal gate transistors
US11004719B1 (en) 2010-11-18 2021-05-11 Monolithic 3D Inc. Methods for producing a 3D semiconductor memory device and structure
US11482439B2 (en) 2010-11-18 2022-10-25 Monolithic 3D Inc. Methods for producing a 3D semiconductor memory device comprising charge trap junction-less transistors
US11569117B2 (en) 2010-11-18 2023-01-31 Monolithic 3D Inc. 3D semiconductor device and structure with single-crystal layers
US11211279B2 (en) 2010-11-18 2021-12-28 Monolithic 3D Inc. Method for processing a 3D integrated circuit and structure
US11164770B1 (en) 2010-11-18 2021-11-02 Monolithic 3D Inc. Method for producing a 3D semiconductor memory device and structure
US11923230B1 (en) 2010-11-18 2024-03-05 Monolithic 3D Inc. 3D semiconductor device and structure with bonding
US11615977B2 (en) 2010-11-18 2023-03-28 Monolithic 3D Inc. 3D semiconductor memory device and structure
US11482438B2 (en) 2010-11-18 2022-10-25 Monolithic 3D Inc. Methods for producing a 3D semiconductor memory device and structure
US11495484B2 (en) 2010-11-18 2022-11-08 Monolithic 3D Inc. 3D semiconductor devices and structures with at least two single-crystal layers
US11735462B2 (en) 2010-11-18 2023-08-22 Monolithic 3D Inc. 3D semiconductor device and structure with single-crystal layers
US11804396B2 (en) 2010-11-18 2023-10-31 Monolithic 3D Inc. Methods for producing a 3D semiconductor device and structure with memory cells and multiple metal layers
US11443971B2 (en) 2010-11-18 2022-09-13 Monolithic 3D Inc. 3D semiconductor device and structure with memory
US11355381B2 (en) 2010-11-18 2022-06-07 Monolithic 3D Inc. 3D semiconductor memory device and structure
US8558195B2 (en) 2010-11-19 2013-10-15 Corning Incorporated Semiconductor structure made using improved pseudo-simultaneous multiple ion implantation process
US8196546B1 (en) 2010-11-19 2012-06-12 Corning Incorporated Semiconductor structure made using improved multiple ion implantation process
US8008175B1 (en) 2010-11-19 2011-08-30 Coring Incorporated Semiconductor structure made using improved simultaneous multiple ion implantation process
US8992746B2 (en) 2010-12-02 2015-03-31 Dainippon Screen Mfg. Co., Ltd. Anodizing apparatus
US8975670B2 (en) 2011-03-06 2015-03-10 Monolithic 3D Inc. Semiconductor device and structure for heat removal
JP5360127B2 (ja) * 2011-05-02 2013-12-04 ソニー株式会社 薄膜半導体の製造方法
US8927318B2 (en) * 2011-06-14 2015-01-06 International Business Machines Corporation Spalling methods to form multi-junction photovoltaic structure
US10388568B2 (en) 2011-06-28 2019-08-20 Monolithic 3D Inc. 3D semiconductor device and system
US8883612B2 (en) 2011-09-12 2014-11-11 Infineon Technologies Austria Ag Method for manufacturing a semiconductor device
US8687399B2 (en) 2011-10-02 2014-04-01 Monolithic 3D Inc. Semiconductor device and structure
US9029173B2 (en) 2011-10-18 2015-05-12 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US9000557B2 (en) 2012-03-17 2015-04-07 Zvi Or-Bach Semiconductor device and structure
US11594473B2 (en) 2012-04-09 2023-02-28 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US11616004B1 (en) 2012-04-09 2023-03-28 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US10600888B2 (en) 2012-04-09 2020-03-24 Monolithic 3D Inc. 3D semiconductor device
US11088050B2 (en) 2012-04-09 2021-08-10 Monolithic 3D Inc. 3D semiconductor device with isolation layers
US11164811B2 (en) 2012-04-09 2021-11-02 Monolithic 3D Inc. 3D semiconductor device with isolation layers and oxide-to-oxide bonding
US11735501B1 (en) 2012-04-09 2023-08-22 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US11410912B2 (en) 2012-04-09 2022-08-09 Monolithic 3D Inc. 3D semiconductor device with vias and isolation layers
US11881443B2 (en) 2012-04-09 2024-01-23 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US11694944B1 (en) 2012-04-09 2023-07-04 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and a connective path
US8557632B1 (en) 2012-04-09 2013-10-15 Monolithic 3D Inc. Method for fabrication of a semiconductor device and structure
US11476181B1 (en) 2012-04-09 2022-10-18 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
FR2995444B1 (fr) * 2012-09-10 2016-11-25 Soitec Silicon On Insulator Procede de detachement d'une couche
US8946052B2 (en) * 2012-09-26 2015-02-03 Sandia Corporation Processes for multi-layer devices utilizing layer transfer
US8574929B1 (en) 2012-11-16 2013-11-05 Monolithic 3D Inc. Method to form a 3D semiconductor device and structure
US8686428B1 (en) 2012-11-16 2014-04-01 Monolithic 3D Inc. Semiconductor device and structure
US11784169B2 (en) 2012-12-22 2023-10-10 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11916045B2 (en) 2012-12-22 2024-02-27 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11309292B2 (en) 2012-12-22 2022-04-19 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US11063024B1 (en) 2012-12-22 2021-07-13 Monlithic 3D Inc. Method to form a 3D semiconductor device and structure
US11018116B2 (en) 2012-12-22 2021-05-25 Monolithic 3D Inc. Method to form a 3D semiconductor device and structure
US11217565B2 (en) 2012-12-22 2022-01-04 Monolithic 3D Inc. Method to form a 3D semiconductor device and structure
US8674470B1 (en) 2012-12-22 2014-03-18 Monolithic 3D Inc. Semiconductor device and structure
US11430668B2 (en) 2012-12-29 2022-08-30 Monolithic 3D Inc. 3D semiconductor device and structure with bonding
US9385058B1 (en) 2012-12-29 2016-07-05 Monolithic 3D Inc. Semiconductor device and structure
US11087995B1 (en) 2012-12-29 2021-08-10 Monolithic 3D Inc. 3D semiconductor device and structure
US10651054B2 (en) 2012-12-29 2020-05-12 Monolithic 3D Inc. 3D semiconductor device and structure
US10892169B2 (en) 2012-12-29 2021-01-12 Monolithic 3D Inc. 3D semiconductor device and structure
US10903089B1 (en) 2012-12-29 2021-01-26 Monolithic 3D Inc. 3D semiconductor device and structure
US11004694B1 (en) 2012-12-29 2021-05-11 Monolithic 3D Inc. 3D semiconductor device and structure
US11430667B2 (en) 2012-12-29 2022-08-30 Monolithic 3D Inc. 3D semiconductor device and structure with bonding
US10115663B2 (en) 2012-12-29 2018-10-30 Monolithic 3D Inc. 3D semiconductor device and structure
US9871034B1 (en) 2012-12-29 2018-01-16 Monolithic 3D Inc. Semiconductor device and structure
US10600657B2 (en) 2012-12-29 2020-03-24 Monolithic 3D Inc 3D semiconductor device and structure
US11177140B2 (en) 2012-12-29 2021-11-16 Monolithic 3D Inc. 3D semiconductor device and structure
FR3002684B1 (fr) * 2013-02-25 2015-04-10 Centre Nat Rech Scient Procede de formation d'un motif dans un echantillon
US10325651B2 (en) 2013-03-11 2019-06-18 Monolithic 3D Inc. 3D semiconductor device with stacked memory
US11935949B1 (en) 2013-03-11 2024-03-19 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and memory cells
US11869965B2 (en) 2013-03-11 2024-01-09 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers and memory cells
US8902663B1 (en) 2013-03-11 2014-12-02 Monolithic 3D Inc. Method of maintaining a memory state
US11088130B2 (en) 2014-01-28 2021-08-10 Monolithic 3D Inc. 3D semiconductor device and structure
US11398569B2 (en) 2013-03-12 2022-07-26 Monolithic 3D Inc. 3D semiconductor device and structure
US10840239B2 (en) 2014-08-26 2020-11-17 Monolithic 3D Inc. 3D semiconductor device and structure
US8994404B1 (en) 2013-03-12 2015-03-31 Monolithic 3D Inc. Semiconductor device and structure
US11923374B2 (en) 2013-03-12 2024-03-05 Monolithic 3D Inc. 3D semiconductor device and structure with metal layers
US10224279B2 (en) 2013-03-15 2019-03-05 Monolithic 3D Inc. Semiconductor device and structure
US9117749B1 (en) 2013-03-15 2015-08-25 Monolithic 3D Inc. Semiconductor device and structure
US11720736B2 (en) 2013-04-15 2023-08-08 Monolithic 3D Inc. Automation methods for 3D integrated circuits and devices
US11030371B2 (en) 2013-04-15 2021-06-08 Monolithic 3D Inc. Automation for monolithic 3D devices
US11341309B1 (en) 2013-04-15 2022-05-24 Monolithic 3D Inc. Automation for monolithic 3D devices
US9021414B1 (en) 2013-04-15 2015-04-28 Monolithic 3D Inc. Automation for monolithic 3D devices
US11487928B2 (en) 2013-04-15 2022-11-01 Monolithic 3D Inc. Automation for monolithic 3D devices
US11574109B1 (en) 2013-04-15 2023-02-07 Monolithic 3D Inc Automation methods for 3D integrated circuits and devices
US11270055B1 (en) 2013-04-15 2022-03-08 Monolithic 3D Inc. Automation for monolithic 3D devices
TWI642094B (zh) 2013-08-06 2018-11-21 半導體能源研究所股份有限公司 剝離方法
TWI663722B (zh) 2013-09-06 2019-06-21 Semiconductor Energy Laboratory Co., Ltd. 發光裝置以及發光裝置的製造方法
US9217206B2 (en) * 2013-09-27 2015-12-22 Sunpower Corporation Enhanced porosification
JP6513929B2 (ja) 2013-11-06 2019-05-15 株式会社半導体エネルギー研究所 剥離方法
US11107808B1 (en) 2014-01-28 2021-08-31 Monolithic 3D Inc. 3D semiconductor device and structure
US11031394B1 (en) 2014-01-28 2021-06-08 Monolithic 3D Inc. 3D semiconductor device and structure
US10297586B2 (en) 2015-03-09 2019-05-21 Monolithic 3D Inc. Methods for processing a 3D semiconductor device
US9230991B2 (en) * 2014-04-16 2016-01-05 Stmicroelectronics, Inc. Method to co-integrate oppositely strained semiconductor devices on a same substrate
US9799829B2 (en) 2014-07-25 2017-10-24 Semiconductor Energy Laboratory Co., Ltd. Separation method, light-emitting device, module, and electronic device
US10381328B2 (en) 2015-04-19 2019-08-13 Monolithic 3D Inc. Semiconductor device and structure
US10825779B2 (en) 2015-04-19 2020-11-03 Monolithic 3D Inc. 3D semiconductor device and structure
US11056468B1 (en) 2015-04-19 2021-07-06 Monolithic 3D Inc. 3D semiconductor device and structure
US11011507B1 (en) 2015-04-19 2021-05-18 Monolithic 3D Inc. 3D semiconductor device and structure
US9892910B2 (en) 2015-05-15 2018-02-13 International Business Machines Corporation Method and structure for forming a dense array of single crystalline semiconductor nanocrystals
US11956952B2 (en) 2015-08-23 2024-04-09 Monolithic 3D Inc. Semiconductor memory device and structure
FR3041364B1 (fr) 2015-09-18 2017-10-06 Soitec Silicon On Insulator Procede de transfert de paves monocristallins
CN115942752A (zh) 2015-09-21 2023-04-07 莫诺利特斯3D有限公司 3d半导体器件和结构
US10522225B1 (en) 2015-10-02 2019-12-31 Monolithic 3D Inc. Semiconductor device with non-volatile memory
US11296115B1 (en) 2015-10-24 2022-04-05 Monolithic 3D Inc. 3D semiconductor device and structure
US11114464B2 (en) 2015-10-24 2021-09-07 Monolithic 3D Inc. 3D semiconductor device and structure
US10418369B2 (en) 2015-10-24 2019-09-17 Monolithic 3D Inc. Multi-level semiconductor memory device and structure
US10847540B2 (en) 2015-10-24 2020-11-24 Monolithic 3D Inc. 3D semiconductor memory device and structure
US11114427B2 (en) 2015-11-07 2021-09-07 Monolithic 3D Inc. 3D semiconductor processor and memory device and structure
US11937422B2 (en) 2015-11-07 2024-03-19 Monolithic 3D Inc. Semiconductor memory device and structure
CN105226187B (zh) * 2015-11-15 2018-01-30 河北工业大学 薄膜晶硅钙钛矿异质结太阳电池及其制备方法
JP6822858B2 (ja) 2016-01-26 2021-01-27 株式会社半導体エネルギー研究所 剥離の起点の形成方法及び剥離方法
DE102016112976A1 (de) * 2016-07-14 2018-01-18 Infineon Technologies Ag Verfahren zum Bearbeiten eines Wafers und Schichtstapel
US11329059B1 (en) 2016-10-10 2022-05-10 Monolithic 3D Inc. 3D memory devices and structures with thinned single crystal substrates
US11812620B2 (en) 2016-10-10 2023-11-07 Monolithic 3D Inc. 3D DRAM memory devices and structures with control circuits
US11930648B1 (en) 2016-10-10 2024-03-12 Monolithic 3D Inc. 3D memory devices and structures with metal layers
US11869591B2 (en) 2016-10-10 2024-01-09 Monolithic 3D Inc. 3D memory devices and structures with control circuits
US11251149B2 (en) 2016-10-10 2022-02-15 Monolithic 3D Inc. 3D memory device and structure
US11711928B2 (en) 2016-10-10 2023-07-25 Monolithic 3D Inc. 3D memory devices and structures with control circuits
FR3077923B1 (fr) * 2018-02-12 2021-07-16 Soitec Silicon On Insulator Procede de fabrication d'une structure de type semi-conducteur sur isolant par transfert de couche
CN109786306A (zh) * 2018-03-22 2019-05-21 苏州捷芯威半导体有限公司 半导体器件制造方法和衬底支撑结构
FR3079532B1 (fr) * 2018-03-28 2022-03-25 Soitec Silicon On Insulator Procede de fabrication d'une couche monocristalline de materiau ain et substrat pour croissance par epitaxie d'une couche monocristalline de materiau ain
JP6911812B2 (ja) * 2018-06-06 2021-07-28 信越半導体株式会社 陽極酸化装置、陽極酸化方法及び陽極酸化装置の陰極の製造方法
CN109406555B (zh) * 2018-10-15 2021-12-07 上海华力微电子有限公司 一种样品去层次方法
US10624213B1 (en) * 2018-12-20 2020-04-14 Intel Corporation Asymmetric electronic substrate and method of manufacture
US11296106B2 (en) 2019-04-08 2022-04-05 Monolithic 3D Inc. 3D memory semiconductor devices and structures
US11018156B2 (en) 2019-04-08 2021-05-25 Monolithic 3D Inc. 3D memory semiconductor devices and structures
US11158652B1 (en) 2019-04-08 2021-10-26 Monolithic 3D Inc. 3D memory semiconductor devices and structures
US11763864B2 (en) 2019-04-08 2023-09-19 Monolithic 3D Inc. 3D memory semiconductor devices and structures with bit-line pillars
US10892016B1 (en) 2019-04-08 2021-01-12 Monolithic 3D Inc. 3D memory semiconductor devices and structures
FR3098643B1 (fr) * 2019-07-09 2023-01-13 Commissariat Energie Atomique Fabrication d'un dispositif photosensible à semiconducteur
CN112670170B (zh) * 2020-12-30 2024-02-02 长春长光圆辰微电子技术有限公司 一种提高硅片键合力的方法
WO2023067386A1 (en) * 2021-10-22 2023-04-27 Infineon Technologies Ag Manufacturing and reuse of semiconductor substrates
CN115867107B (zh) * 2023-02-27 2023-12-08 青禾晶元(天津)半导体材料有限公司 一种利用键合技术同步制备两片复合压电衬底的方法

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62108539A (ja) * 1985-11-07 1987-05-19 Oki Electric Ind Co Ltd Ｓｏｉ構造半導体装置の製造方法
GB8725497D0 (en) * 1987-10-30 1987-12-02 Atomic Energy Authority Uk Isolation of silicon
DE68913254T2 (de) * 1988-10-02 1994-07-07 Canon Kk Gegenstand aus Kristall und Verfahren zu seiner Herstellung.
US5290712A (en) * 1989-03-31 1994-03-01 Canon Kabushiki Kaisha Process for forming crystalline semiconductor film
US5278092A (en) * 1989-08-07 1994-01-11 Canon Kabushiki Kaisha Method of forming crystal semiconductor film
JPH0370156A (ja) * 1989-08-10 1991-03-26 Oki Electric Ind Co Ltd 半導体装置の製造方法
US5278093A (en) * 1989-09-23 1994-01-11 Canon Kabushiki Kaisha Method for forming semiconductor thin film
JP2695488B2 (ja) * 1989-10-09 1997-12-24 キヤノン株式会社 結晶の成長方法
US5363793A (en) * 1990-04-06 1994-11-15 Canon Kabushiki Kaisha Method for forming crystals
KR950014609B1 (ko) * 1990-08-03 1995-12-11 캐논 가부시끼가이샤 반도체부재 및 반도체부재의 제조방법
GB9025236D0 (en) * 1990-11-20 1991-01-02 Secr Defence Silicon-on porous-silicon;method of production
US5403771A (en) * 1990-12-26 1995-04-04 Canon Kabushiki Kaisha Process for producing a solar cell by means of epitaxial growth process
FR2681472B1 (fr) * 1991-09-18 1993-10-29 Commissariat Energie Atomique Procede de fabrication de films minces de materiau semiconducteur.
JP3112106B2 (ja) * 1991-10-11 2000-11-27 キヤノン株式会社 半導体基材の作製方法
US5285078A (en) * 1992-01-24 1994-02-08 Nippon Steel Corporation Light emitting element with employment of porous silicon and optical device utilizing light emitting element
EP1043768B1 (de) * 1992-01-30 2004-09-08 Canon Kabushiki Kaisha Herstellungsverfahren für Halbleitersubstrate
JP3214631B2 (ja) * 1992-01-31 2001-10-02 キヤノン株式会社 半導体基体及びその作製方法
US5331180A (en) * 1992-04-30 1994-07-19 Fujitsu Limited Porous semiconductor light emitting device
JP3352118B2 (ja) 1992-08-25 2002-12-03 キヤノン株式会社 半導体装置及びその製造方法
JPH06338631A (ja) * 1993-03-29 1994-12-06 Canon Inc 発光素子及びその製造方法
JP2972066B2 (ja) * 1993-09-09 1999-11-08 シャープ株式会社 多孔質シリコン膜の製造方法
JPH07211602A (ja) * 1994-01-13 1995-08-11 Canon Inc 半導体基体の製造方法
JP3257580B2 (ja) 1994-03-10 2002-02-18 キヤノン株式会社 半導体基板の作製方法
JPH08148280A (ja) * 1994-04-14 1996-06-07 Toshiba Corp 半導体装置およびその製造方法
JPH07326719A (ja) * 1994-05-31 1995-12-12 Canon Inc 貼り合わせ半導体基板の形成方法
JP7211602B1 (ja) 2021-10-19 2023-01-24 ジャラ テック プライベートリミテッド 養殖支援システム

Also Published As

Publication number Publication date
EP0767486A2 (de) 1997-04-09
EP0767486B1 (de) 2004-01-02
JPH09162090A (ja) 1997-06-20
CN1159071A (zh) 1997-09-10
JP3352340B2 (ja) 2002-12-03
EP0767486A3 (de) 1997-12-29
US5854123A (en) 1998-12-29
KR100291501B1 (ko) 2001-10-24
CA2187269A1 (en) 1997-04-07
TW330307B (en) 1998-04-21
US20010019153A1 (en) 2001-09-06
US6246068B1 (en) 2001-06-12
DE69631233T2 (de) 2004-11-11
KR100348514B1 (ko) 2002-08-13
SG63669A1 (en) 1999-03-30
CN1132223C (zh) 2003-12-24
CA2187269C (en) 2001-05-08

Similar Documents

Publication Publication Date Title
DE69631233D1 (de) Verfahren zur Herstellung eines Halbleitersubstrats
DE69528611D1 (de) Verfahren zur Herstellung eines Halbleitersubstrates
DE69333152D1 (de) Verfahren zur Herstellung eines Halbleitersubstrates
DE69331815D1 (de) Verfahren zur Herstellung eines Halbleitersubstrates
DE69331816D1 (de) Verfahren zur Herstellung eines Halbleitersubstrats
DE69627215D1 (de) Verfahren zur Herstellung eines Halbleiterbauelements
DE69228349D1 (de) Verfahren zur Herstellung eines Halbleitersubstrats
DE69514201D1 (de) Verfahren zur Herstellung eines Halbleiterbauelements
DE69332511T2 (de) Verfahren zur Herstellung eines Halbleitersubstrats
DE69333282D1 (de) Verfahren zur Herstellung eines Halbleitersubstrats
DE69305939T2 (de) Verfahren zur Herstellung eines keramischen Schaltungssubstrates
DE69737783D1 (de) Verfahren zur Herstellung eines Halbleiterspeicherbauteils
DE69421592T2 (de) Verfahren zur Herstellung einer Halbleitervorrichtung
DE69633367D1 (de) Verfahren zur Herstellung eines in einer Halbleitervorrichtung integrierten Kondensators
DE69503532T2 (de) Verfahren zur Herstellung einer Halbleitervorrichtung
DE69209488D1 (de) Verfahren zur Herstellung eines Halbleiterplätchens und Substrat für die Herstellung eines Halbleiters
DE69309358T2 (de) Verfahren zur Herstellung eines Schaltungssubstrats
DE69231777D1 (de) Verfahren zur Herstellung eines Halbleitersubstrats
DE69306600T2 (de) Verfahren zur Herstellung eines mehrschichtigen Leitersubstrats
DE69712684D1 (de) Verfahren zur Herstellung eines Dünnschichttransistors
DE69120865D1 (de) Verfahren zur Herstellung eines Halbleiterbauelements
DE69615642T2 (de) Verfahren zur Herstellung einer Halbleiteranordnung
DE69324524D1 (de) Verfahren zur Herstellung eines Halbleiter-Speicherbauteils
DE69833829D1 (de) Verfahren zur Herstellung eines Halbleiter-Speicherbauteils
DE69025994D1 (de) Verfahren zur Herstellung eines Halbleitersubstrats

Legal Events

Date Code Title Description
8364 No opposition during term of opposition