DE69632490D1 - Verfahren und Vorrichtung zur In-Situ-Kontrolle und Bestimmung des Endes von chemisch-mechanischen Planiervorgängen - Google Patents

Verfahren und Vorrichtung zur In-Situ-Kontrolle und Bestimmung des Endes von chemisch-mechanischen Planiervorgängen

Info

Publication number
DE69632490D1
DE69632490D1 DE69632490T DE69632490T DE69632490D1 DE 69632490 D1 DE69632490 D1 DE 69632490D1 DE 69632490 T DE69632490 T DE 69632490T DE 69632490 T DE69632490 T DE 69632490T DE 69632490 D1 DE69632490 D1 DE 69632490D1
Authority
DE
Germany
Prior art keywords
determination
chemical
situ control
mechanical leveling
leveling processes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69632490T
Other languages
English (en)
Other versions
DE69632490T2 (de
Inventor
Manoocher Birang
Nils Johansson
Allan Gleason
Grigory Pyatigorsky
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=23639462&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69632490(D1) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Priority claimed from US08/605,769 external-priority patent/US5964643A/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE69632490D1 publication Critical patent/DE69632490D1/de
Application granted granted Critical
Publication of DE69632490T2 publication Critical patent/DE69632490T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/005—Control means for lapping machines or devices
    • B24B37/013—Devices or means for detecting lapping completion
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B47/00—Drives or gearings; Equipment therefor
    • B24B47/10—Drives or gearings; Equipment therefor for rotating or reciprocating working-spindles carrying grinding wheels or workpieces
    • B24B47/12—Drives or gearings; Equipment therefor for rotating or reciprocating working-spindles carrying grinding wheels or workpieces by mechanical gearing or electric power
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
    • B24B49/04—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent involving measurement of the workpiece at the place of grinding during grinding operation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/12—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation involving optical means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B51/00—Arrangements for automatic control of a series of individual steps in grinding a workpiece
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G01B11/0683—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating measurement during deposition or removal of the layer
DE69632490T 1995-03-28 1996-03-28 Verfahren und Vorrichtung zur In-Situ-Kontrolle und Bestimmung des Endes von chemisch-mechanischen Planiervorgängen Expired - Fee Related DE69632490T2 (de)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US41398295A 1995-03-28 1995-03-28
US413982 1995-03-28
US605769 1996-02-22
US08/605,769 US5964643A (en) 1995-03-28 1996-02-22 Apparatus and method for in-situ monitoring of chemical mechanical polishing operations

Publications (2)

Publication Number Publication Date
DE69632490D1 true DE69632490D1 (de) 2004-06-17
DE69632490T2 DE69632490T2 (de) 2005-05-12

Family

ID=23639462

Family Applications (3)

Application Number Title Priority Date Filing Date
DE69635816T Expired - Lifetime DE69635816T2 (de) 1995-03-28 1996-03-28 Verfahren zum Herstellen einer Vorrichtung zur In-Situ-Kontrolle und Bestimmung des Endes von chemisch-mechanischen Planiervorgängen
DE69632490T Expired - Fee Related DE69632490T2 (de) 1995-03-28 1996-03-28 Verfahren und Vorrichtung zur In-Situ-Kontrolle und Bestimmung des Endes von chemisch-mechanischen Planiervorgängen
DE69618698T Expired - Lifetime DE69618698T2 (de) 1995-03-28 1996-03-28 Verfahren und Vorrichtung zur In-Situ-Kontroll und Bestimmung des Endes von chemisch-mechanischen Planiervorgänge

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE69635816T Expired - Lifetime DE69635816T2 (de) 1995-03-28 1996-03-28 Verfahren zum Herstellen einer Vorrichtung zur In-Situ-Kontrolle und Bestimmung des Endes von chemisch-mechanischen Planiervorgängen

Family Applications After (1)

Application Number Title Priority Date Filing Date
DE69618698T Expired - Lifetime DE69618698T2 (de) 1995-03-28 1996-03-28 Verfahren und Vorrichtung zur In-Situ-Kontroll und Bestimmung des Endes von chemisch-mechanischen Planiervorgänge

Country Status (5)

Country Link
US (5) US7731566B2 (de)
EP (1) EP0738561B1 (de)
JP (3) JP3431115B2 (de)
KR (1) KR100542474B1 (de)
DE (3) DE69635816T2 (de)

Families Citing this family (125)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6614529B1 (en) 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US7037403B1 (en) 1992-12-28 2006-05-02 Applied Materials Inc. In-situ real-time monitoring technique and apparatus for detection of thin films during chemical/mechanical polishing planarization
US6676717B1 (en) * 1995-03-28 2004-01-13 Applied Materials Inc Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations
US6537133B1 (en) 1995-03-28 2003-03-25 Applied Materials, Inc. Method for in-situ endpoint detection for chemical mechanical polishing operations
US5964643A (en) * 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US6876454B1 (en) 1995-03-28 2005-04-05 Applied Materials, Inc. Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations
DE69635816T2 (de) 1995-03-28 2006-10-12 Applied Materials, Inc., Santa Clara Verfahren zum Herstellen einer Vorrichtung zur In-Situ-Kontrolle und Bestimmung des Endes von chemisch-mechanischen Planiervorgängen
US5893796A (en) 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5605760A (en) * 1995-08-21 1997-02-25 Rodel, Inc. Polishing pads
US5762536A (en) * 1996-04-26 1998-06-09 Lam Research Corporation Sensors for a linear polisher
US5872633A (en) * 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
US5958148A (en) 1996-07-26 1999-09-28 Speedfam-Ipec Corporation Method for cleaning workpiece surfaces and monitoring probes during workpiece processing
WO1998005066A2 (en) * 1996-07-26 1998-02-05 Speedfam Corporation Methods and apparatus for the in-process detection and measurement of thin film layers
US6328642B1 (en) 1997-02-14 2001-12-11 Lam Research Corporation Integrated pad and belt for chemical mechanical polishing
JPH10230451A (ja) * 1997-02-20 1998-09-02 Speedfam Co Ltd 研磨装置及びワーク測定方法
JPH10286766A (ja) * 1997-04-10 1998-10-27 Fujitsu Ltd 薄膜素子の自動ラッピング方法及びその装置
JP3231659B2 (ja) * 1997-04-28 2001-11-26 日本電気株式会社 自動研磨装置
US6108091A (en) * 1997-05-28 2000-08-22 Lam Research Corporation Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing
US6146248A (en) * 1997-05-28 2000-11-14 Lam Research Corporation Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher
US6111634A (en) * 1997-05-28 2000-08-29 Lam Research Corporation Method and apparatus for in-situ monitoring of thickness using a multi-wavelength spectrometer during chemical-mechanical polishing
JP3450651B2 (ja) * 1997-06-10 2003-09-29 キヤノン株式会社 研磨方法及びそれを用いた研磨装置
TW374050B (en) * 1997-10-31 1999-11-11 Applied Materials Inc Method and apparatus for modeling substrate reflectivity during chemical mechanical polishing
US6301009B1 (en) * 1997-12-01 2001-10-09 Zygo Corporation In-situ metrology system and method
TW421620B (en) * 1997-12-03 2001-02-11 Siemens Ag Device and method to control an end-point during polish of components (especially semiconductor components)
US6332470B1 (en) 1997-12-30 2001-12-25 Boris Fishkin Aerosol substrate cleaner
US5972162A (en) * 1998-01-06 1999-10-26 Speedfam Corporation Wafer polishing with improved end point detection
US6068539A (en) 1998-03-10 2000-05-30 Lam Research Corporation Wafer polishing device with movable window
JPH11300607A (ja) * 1998-04-16 1999-11-02 Speedfam-Ipec Co Ltd 研磨装置
US6271047B1 (en) 1998-05-21 2001-08-07 Nikon Corporation Layer-thickness detection methods and apparatus for wafers and the like, and polishing apparatus comprising same
WO2000026613A1 (en) * 1998-11-02 2000-05-11 Applied Materials, Inc. Optical monitoring of radial ranges in chemical mechanical polishing a metal layer on a substrate
US6280289B1 (en) 1998-11-02 2001-08-28 Applied Materials, Inc. Method and apparatus for detecting an end-point in chemical mechanical polishing of metal layers
US6159073A (en) 1998-11-02 2000-12-12 Applied Materials, Inc. Method and apparatus for measuring substrate layer thickness during chemical mechanical polishing
JP2000183002A (ja) 1998-12-10 2000-06-30 Okamoto Machine Tool Works Ltd ウエハの研磨終点検出方法および研磨終点検出装置
US6994607B2 (en) 2001-12-28 2006-02-07 Applied Materials, Inc. Polishing pad with window
US6716085B2 (en) 2001-12-28 2004-04-06 Applied Materials Inc. Polishing pad with transparent window
US6179709B1 (en) 1999-02-04 2001-01-30 Applied Materials, Inc. In-situ monitoring of linear substrate polishing operations
US6179688B1 (en) 1999-03-17 2001-01-30 Advanced Micro Devices, Inc. Method and apparatus for detecting the endpoint of a chemical-mechanical polishing operation
EP1176630B1 (de) 1999-03-31 2007-06-27 Nikon Corporation Polierkörper, poliermaschine, poliermaschinenjustierverfahren, dicken- oder endpunkt-messverfahren für die polierte schicht, herstellungsverfahren eines halbleiterbauelementes
WO2000071971A1 (en) 1999-05-24 2000-11-30 Luxtron Corporation Optical techniques for measuring layer thicknesses
US6570662B1 (en) 1999-05-24 2003-05-27 Luxtron Corporation Optical techniques for measuring layer thicknesses and other surface characteristics of objects such as semiconductor wafers
US6224460B1 (en) 1999-06-30 2001-05-01 Vlsi Technology, Inc. Laser interferometry endpoint detection with windowless polishing pad for chemical mechanical polishing process
US6406363B1 (en) 1999-08-31 2002-06-18 Lam Research Corporation Unsupported chemical mechanical polishing belt
US6524164B1 (en) 1999-09-14 2003-02-25 Applied Materials, Inc. Polishing pad with transparent window having reduced window leakage for a chemical mechanical polishing apparatus
US6671051B1 (en) 1999-09-15 2003-12-30 Kla-Tencor Apparatus and methods for detecting killer particles during chemical mechanical polishing
US6628397B1 (en) 1999-09-15 2003-09-30 Kla-Tencor Apparatus and methods for performing self-clearing optical measurements
US6379223B1 (en) * 1999-11-29 2002-04-30 Applied Materials, Inc. Method and apparatus for electrochemical-mechanical planarization
US6299741B1 (en) 1999-11-29 2001-10-09 Applied Materials, Inc. Advanced electrolytic polish (AEP) assisted metal wafer planarization method and apparatus
US6399501B2 (en) * 1999-12-13 2002-06-04 Applied Materials, Inc. Method and apparatus for detecting polishing endpoint with optical monitoring
EP1244907A1 (de) * 1999-12-23 2002-10-02 KLA-Tencor Corporation Vor-ort-überwachung für metallisationsprozesse unter verwendung von wirbelstrommessungen und optischen messungen
KR20010076353A (ko) * 2000-01-18 2001-08-11 조셉 제이. 스위니 2단계 화학 기계적 연마공정의 광학적 모니터링 방법
US6506097B1 (en) * 2000-01-18 2003-01-14 Applied Materials, Inc. Optical monitoring in a two-step chemical mechanical polishing process
KR100789663B1 (ko) * 2000-03-15 2007-12-31 롬 앤드 하스 일렉트로닉 머티리얼스 씨엠피 홀딩스 인코포레이티드 연마층에 투명 윈도우 부분을 갖는 연마 패드
KR100827871B1 (ko) * 2000-05-19 2008-05-07 어플라이드 머티어리얼스, 인코포레이티드 화학 기계 폴리싱을 위한 인시츄 방식의 엔드포인트 검출및 공정 모니터링 방법 및 장치
US8485862B2 (en) 2000-05-19 2013-07-16 Applied Materials, Inc. Polishing pad for endpoint detection and related methods
EP1618991B1 (de) * 2000-05-19 2008-01-09 Applied Materials, Inc. Polierkissen
US6685537B1 (en) 2000-06-05 2004-02-03 Speedfam-Ipec Corporation Polishing pad window for a chemical mechanical polishing tool
US6485354B1 (en) * 2000-06-09 2002-11-26 Strasbaugh Polishing pad with built-in optical sensor
JP2002001647A (ja) * 2000-06-19 2002-01-08 Rodel Nitta Co 研磨パッド
US6495464B1 (en) 2000-06-30 2002-12-17 Lam Research Corporation Method and apparatus for fixed abrasive substrate preparation and use in a cluster CMP tool
US6878038B2 (en) 2000-07-10 2005-04-12 Applied Materials Inc. Combined eddy current sensing and optical monitoring for chemical mechanical polishing
US6602724B2 (en) 2000-07-27 2003-08-05 Applied Materials, Inc. Chemical mechanical polishing of a metal layer with polishing rate monitoring
JP2002124496A (ja) 2000-10-18 2002-04-26 Hitachi Ltd 研磨加工の終点検出計測方法及びその装置、並びにそれを用いた半導体デバイスの製造方法及びその製造装置
US20020072296A1 (en) * 2000-11-29 2002-06-13 Muilenburg Michael J. Abrasive article having a window system for polishing wafers, and methods
US6936154B2 (en) * 2000-12-15 2005-08-30 Asm Nutool, Inc. Planarity detection methods and apparatus for electrochemical mechanical processing systems
US6609961B2 (en) 2001-01-09 2003-08-26 Lam Research Corporation Chemical mechanical planarization belt assembly and method of assembly
US6608495B2 (en) 2001-03-19 2003-08-19 Applied Materials, Inc. Eddy-optic sensor for object inspection
US6491569B2 (en) 2001-04-19 2002-12-10 Speedfam-Ipec Corporation Method and apparatus for using optical reflection data to obtain a continuous predictive signal during CMP
US6855034B2 (en) 2001-04-25 2005-02-15 Jsr Corporation Polishing pad for semiconductor wafer and laminated body for polishing of semiconductor wafer equipped with the same as well as method for polishing of semiconductor wafer
US6966816B2 (en) 2001-05-02 2005-11-22 Applied Materials, Inc. Integrated endpoint detection system with optical and eddy current monitoring
US6514775B2 (en) 2001-06-29 2003-02-04 Kla-Tencor Technologies Corporation In-situ end point detection for semiconductor wafer polishing
JP3932836B2 (ja) 2001-07-27 2007-06-20 株式会社日立製作所 薄膜の膜厚計測方法及びその装置並びにそれを用いたデバイスの製造方法
JP2003133270A (ja) 2001-10-26 2003-05-09 Jsr Corp 化学機械研磨用窓材及び研磨パッド
US6599765B1 (en) 2001-12-12 2003-07-29 Lam Research Corporation Apparatus and method for providing a signal port in a polishing pad for optical endpoint detection
US6811466B1 (en) 2001-12-28 2004-11-02 Applied Materials, Inc. System and method for in-line metal profile measurement
US7001242B2 (en) 2002-02-06 2006-02-21 Applied Materials, Inc. Method and apparatus of eddy current monitoring for chemical mechanical polishing
CN1639848A (zh) * 2002-08-30 2005-07-13 东丽株式会社 研磨垫、平台孔盖及研磨装置和研磨方法及半导体器件的制造方法
WO2004049417A1 (ja) 2002-11-27 2004-06-10 Toyo Tire & Rubber Co., Ltd. 研磨パッド及び半導体デバイスの製造方法
US6930782B1 (en) 2003-03-28 2005-08-16 Lam Research Corporation End point detection with imaging matching in semiconductor processing
KR100541545B1 (ko) 2003-06-16 2006-01-11 삼성전자주식회사 화학기계적 연마 장비의 연마 테이블
EP1498222B1 (de) 2003-07-17 2014-12-17 JSR Corporation Chemisch-mechanisches Polierkissen und Polierverfahren
US7097537B1 (en) 2003-08-18 2006-08-29 Applied Materials, Inc. Determination of position of sensor measurements during polishing
US7153185B1 (en) 2003-08-18 2006-12-26 Applied Materials, Inc. Substrate edge detection
US7264536B2 (en) 2003-09-23 2007-09-04 Applied Materials, Inc. Polishing pad with window
CN1926666A (zh) 2004-03-11 2007-03-07 东洋橡胶工业株式会社 研磨垫及半导体器件的制造方法
CN100424830C (zh) 2004-04-23 2008-10-08 Jsr株式会社 用于抛光半导体晶片的抛光垫、层叠体和方法
JP2006116614A (ja) * 2004-10-19 2006-05-11 Toray Ind Inc 研磨パッドおよび研磨装置
KR101172324B1 (ko) 2004-12-10 2012-08-14 도요 고무 고교 가부시키가이샤 연마 패드 및 연마 패드의 제조 방법
KR101294863B1 (ko) * 2006-02-06 2013-08-08 도레이 카부시키가이샤 연마 패드 및 연마 장치
CN102672630B (zh) 2006-04-19 2015-03-18 东洋橡胶工业株式会社 抛光垫的制造方法
JP2007307639A (ja) 2006-05-17 2007-11-29 Toyo Tire & Rubber Co Ltd 研磨パッド
JP5110677B2 (ja) 2006-05-17 2012-12-26 東洋ゴム工業株式会社 研磨パッド
JP4931133B2 (ja) 2007-03-15 2012-05-16 東洋ゴム工業株式会社 研磨パッド
JP4971028B2 (ja) 2007-05-16 2012-07-11 東洋ゴム工業株式会社 研磨パッドの製造方法
JP4943233B2 (ja) 2007-05-31 2012-05-30 東洋ゴム工業株式会社 研磨パッドの製造方法
US7824730B2 (en) 2007-08-31 2010-11-02 United Technologies Corporation Method and apparatus for measuring coating thickness with a laser
US8337278B2 (en) 2007-09-24 2012-12-25 Applied Materials, Inc. Wafer edge characterization by successive radius measurements
DE102007055260A1 (de) * 2007-11-20 2009-05-28 Robert Bosch Gmbh Verfahren zur Prüfung der Oberflächenbeständigkeit
US8766658B2 (en) * 2008-07-18 2014-07-01 Tokyo Electron Limited Probe
KR20110120893A (ko) * 2009-01-16 2011-11-04 어플라이드 머티어리얼스, 인코포레이티드 윈도우 지지부를 가지는 폴리싱 패드 및 시스템
CN101758448B (zh) * 2009-12-30 2011-07-27 东南大学 电化学电极抛光装置
JP5620141B2 (ja) * 2010-04-15 2014-11-05 東洋ゴム工業株式会社 研磨パッド
US8393940B2 (en) * 2010-04-16 2013-03-12 Applied Materials, Inc. Molding windows in thin pads
CN102441839B (zh) * 2011-11-11 2014-06-04 上海华力微电子有限公司 提高固定研磨料在研磨垫上进行cmp工艺稳定性的方法
US10226853B2 (en) 2013-01-18 2019-03-12 Applied Materials, Inc. Methods and apparatus for conditioning of chemical mechanical polishing pads
ES2664738T3 (es) 2013-02-14 2018-04-23 Qso Interferometer Systems Ab Un método y un aparato para la medición cuantitativa de la precisión de la superficie de un área
US20140329439A1 (en) * 2013-05-01 2014-11-06 Applied Materials, Inc. Apparatus and methods for acoustical monitoring and control of through-silicon-via reveal processing
CN103605844B (zh) * 2013-11-13 2016-05-11 中国科学院微电子研究所 一种cmp压力分布计算方法及研磨去除率的获取方法
US9425109B2 (en) * 2014-05-30 2016-08-23 Taiwan Semiconductor Manufacturing Co., Ltd. Planarization method, method for polishing wafer, and CMP system
US20150375361A1 (en) * 2014-06-25 2015-12-31 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing method
US9475168B2 (en) * 2015-03-26 2016-10-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Polishing pad window
JP6622117B2 (ja) * 2016-03-08 2019-12-18 スピードファム株式会社 平面研磨装置及びキャリア
US9962805B2 (en) * 2016-04-22 2018-05-08 Taiwan Semiconductor Manufacturing Company, Ltd. Chemical mechanical polishing apparatus and method
US10569383B2 (en) 2017-09-15 2020-02-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Flanged optical endpoint detection windows and CMP polishing pads containing them
US10898986B2 (en) 2017-09-15 2021-01-26 Applied Materials, Inc. Chattering correction for accurate sensor position determination on wafer
CA3078474C (en) * 2017-10-04 2023-05-16 Saint-Gobain Abrasives, Inc. Abrasive article and method for forming same
DE102018105133A1 (de) * 2018-03-06 2019-09-12 Karl Heesemann Maschinenfabrik Gmbh & Co. Kg Verfahren zum Betreiben einer Schleifvorrichtung
DE102018105134A1 (de) * 2018-03-06 2019-09-12 Karl Heesemann Maschinenfabrik Gmbh & Co. Kg Verfahren zum Betreiben einer Schleifvorrichtung und Schleifvorrichtung
WO2019177842A1 (en) 2018-03-12 2019-09-19 Applied Materials, Inc. Filtering during in-situ monitoring of polishing
TWI825075B (zh) * 2018-04-03 2023-12-11 美商應用材料股份有限公司 針對墊子厚度使用機器學習及補償的拋光裝置、拋光系統、方法及電腦儲存媒體
CN110797272B (zh) * 2018-08-01 2022-08-26 上海祖强能源有限公司 芯片切割方法及芯片切割装置
CN109290856B (zh) * 2018-10-24 2019-11-26 武汉理工大学 一种低刀具成本的圆弧打磨方法
TWI820308B (zh) * 2019-03-21 2023-11-01 美商應用材料股份有限公司 監視化學機械拋光中的拋光墊紋理
TWI809389B (zh) 2020-06-08 2023-07-21 美商應用材料股份有限公司 用於在拋光相鄰導電層的堆疊期間的輪廓控制的系統、方法及電腦程式產品
KR20220114089A (ko) 2020-06-24 2022-08-17 어플라이드 머티어리얼스, 인코포레이티드 연마 패드 마모 보상을 이용한 기판 층 두께의 결정
US20220371152A1 (en) * 2021-05-20 2022-11-24 Applied Materials, Inc. Fourier filtering of spectral data for measuring layer thickness during substrate processing

Family Cites Families (92)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1075634A (fr) * 1953-03-12 1954-10-19 Dispositif de meulage à meule entaillée permettant d'observer le travail effectué
US4037367A (en) 1975-12-22 1977-07-26 Kruse James A Grinding tool
JPS55106769A (en) 1979-01-31 1980-08-15 Masami Masuko Lapping method and its apparatus
US4272024A (en) * 1979-08-27 1981-06-09 Kah Jr Carl L C Sprinkler head
US4328068A (en) 1980-07-22 1982-05-04 Rca Corporation Method for end point detection in a plasma etching process
JPS57138575A (en) 1981-02-16 1982-08-26 Hitachi Ltd Grinding machine
JPS584353A (ja) 1981-06-24 1983-01-11 Hitachi Ltd ラツピング装置
JPS58178526A (ja) 1982-04-14 1983-10-19 Nec Corp ウエ−ハポリシング方法
DE3273475D1 (en) 1982-10-14 1986-10-30 Ibm Deutschland Method to measure the thickness of eroded layers at subtractive work treatment processes
JPS6037076A (ja) 1983-08-08 1985-02-26 Canon Inc 入力装置
JPS62190726A (ja) 1986-02-17 1987-08-20 Tokyo Electron Ltd 位置合わせ装置
JPS62190728A (ja) 1986-02-18 1987-08-20 Nippon Telegr & Teleph Corp <Ntt> エツチング終点モニタ法および装置
JPS62211927A (ja) 1986-03-12 1987-09-17 Nec Corp 半導体ウエ−ハの加工方法
US4793895A (en) 1988-01-25 1988-12-27 Ibm Corporation In situ conductivity monitoring technique for chemical/mechanical planarization endpoint detection
US4927485A (en) 1988-07-28 1990-05-22 Applied Materials, Inc. Laser interferometer system for monitoring and controlling IC processing
DE3901017A1 (de) * 1989-01-14 1990-07-19 Leybold Ag Verfahren und vorrichtung zur ueberwachung des schichtabtrags bei einem trockenaetzprozess
JPH02222533A (ja) 1989-02-23 1990-09-05 Sumitomo Electric Ind Ltd 半導体ウェーハの研削装置
US5084071A (en) 1989-03-07 1992-01-28 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
US4954142A (en) 1989-03-07 1990-09-04 International Business Machines Corporation Method of chemical-mechanical polishing an electronic component substrate and polishing slurry therefor
JPH02253288A (ja) * 1989-03-28 1990-10-12 Canon Inc 画像形成装置
US5177908A (en) 1990-01-22 1993-01-12 Micron Technology, Inc. Polishing pad
US5020283A (en) 1990-01-22 1991-06-04 Micron Technology, Inc. Polishing pad with uniform abrasion
JPH03234467A (ja) 1990-02-05 1991-10-18 Canon Inc スタンパの金型取付面の研磨方法およびその研磨機
US5257478A (en) 1990-03-22 1993-11-02 Rodel, Inc. Apparatus for interlayer planarization of semiconductor material
US5081421A (en) 1990-05-01 1992-01-14 At&T Bell Laboratories In situ monitoring technique and apparatus for chemical/mechanical planarization endpoint detection
US5132617A (en) 1990-05-16 1992-07-21 International Business Machines Corp. Method of measuring changes in impedance of a variable impedance load by disposing an impedance connected coil within the air gap of a magnetic core
US5242524A (en) 1990-05-16 1993-09-07 International Business Machines Corporation Device for detecting an end point in polishing operations
US5213655A (en) 1990-05-16 1993-05-25 International Business Machines Corporation Device and method for detecting an end point in polishing operation
US5081796A (en) * 1990-08-06 1992-01-21 Micron Technology, Inc. Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer
USRE34425E (en) * 1990-08-06 1993-11-02 Micron Technology, Inc. Method and apparatus for mechanical planarization and endpoint detection of a semiconductor wafer
US6033437A (en) 1991-09-30 2000-03-07 Orbital Implant Technology Pegs for orbital implants
JPH05138531A (ja) 1991-11-21 1993-06-01 Mitsubishi Heavy Ind Ltd 研磨装置
US5196353A (en) 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US5514245A (en) 1992-01-27 1996-05-07 Micron Technology, Inc. Method for chemical planarization (CMP) of a semiconductor wafer to provide a planar surface free of microscratches
AU654901B2 (en) 1992-03-16 1994-11-24 De Beers Industrial Diamond Division (Proprietary) Limited Polishing pad
AU3781293A (en) 1992-04-13 1993-11-18 Minnesota Mining And Manufacturing Company Abrasive article
JP2770101B2 (ja) 1992-05-08 1998-06-25 コマツ電子金属株式会社 貼り合わせウェーハの研磨方法
US5265378A (en) 1992-07-10 1993-11-30 Lsi Logic Corporation Detecting the endpoint of chem-mech polishing and resulting semiconductor device
JPH0637076A (ja) 1992-07-15 1994-02-10 Seiko Instr Inc 半導体研磨方法
US5499733A (en) * 1992-09-17 1996-03-19 Luxtron Corporation Optical techniques of measuring endpoint during the processing of material layers in an optically hostile environment
US5234868A (en) 1992-10-29 1993-08-10 International Business Machines Corporation Method for determining planarization endpoint during chemical-mechanical polishing
US6614529B1 (en) 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5413651A (en) * 1993-03-23 1995-05-09 B&H Manufacturing Company Universal roll-fed label cutter
US5329734A (en) 1993-04-30 1994-07-19 Motorola, Inc. Polishing pads used to chemical-mechanical polish a semiconductor substrate
US5337015A (en) 1993-06-14 1994-08-09 International Business Machines Corporation In-situ endpoint detection method and apparatus for chemical-mechanical polishing using low amplitude input voltage
JP3326443B2 (ja) * 1993-08-10 2002-09-24 株式会社ニコン ウエハ研磨方法及びその装置
US5486129A (en) 1993-08-25 1996-01-23 Micron Technology, Inc. System and method for real-time control of semiconductor a wafer polishing, and a polishing head
US5394655A (en) 1993-08-31 1995-03-07 Texas Instruments Incorporated Semiconductor polishing pad
US5395801A (en) 1993-09-29 1995-03-07 Micron Semiconductor, Inc. Chemical-mechanical polishing processes of planarizing insulating layers
US5433651A (en) 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
US5413941A (en) 1994-01-06 1995-05-09 Micron Technology, Inc. Optical end point detection methods in semiconductor planarizing polishing processes
US5489233A (en) 1994-04-08 1996-02-06 Rodel, Inc. Polishing pads and methods for their use
JP3313505B2 (ja) 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5791969A (en) * 1994-11-01 1998-08-11 Lund; Douglas E. System and method of automatically polishing semiconductor wafers
JPH08174411A (ja) 1994-12-22 1996-07-09 Ebara Corp ポリッシング装置
US6676717B1 (en) 1995-03-28 2004-01-13 Applied Materials Inc Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations
US6537133B1 (en) 1995-03-28 2003-03-25 Applied Materials, Inc. Method for in-situ endpoint detection for chemical mechanical polishing operations
US5964643A (en) * 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5893796A (en) * 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US6876454B1 (en) 1995-03-28 2005-04-05 Applied Materials, Inc. Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations
US6719818B1 (en) 1995-03-28 2004-04-13 Applied Materials, Inc. Apparatus and method for in-situ endpoint detection for chemical mechanical polishing operations
DE69635816T2 (de) * 1995-03-28 2006-10-12 Applied Materials, Inc., Santa Clara Verfahren zum Herstellen einer Vorrichtung zur In-Situ-Kontrolle und Bestimmung des Endes von chemisch-mechanischen Planiervorgängen
US5838447A (en) 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
JP3321338B2 (ja) 1995-07-24 2002-09-03 株式会社東芝 半導体装置の製造方法および製造装置
US5605760A (en) * 1995-08-21 1997-02-25 Rodel, Inc. Polishing pads
JP3234467B2 (ja) 1995-09-26 2001-12-04 松下電工株式会社 軒樋接続構造
US5643048A (en) * 1996-02-13 1997-07-01 Micron Technology, Inc. Endpoint regulator and method for regulating a change in wafer thickness in chemical-mechanical planarization of semiconductor wafers
US5663797A (en) 1996-05-16 1997-09-02 Micron Technology, Inc. Method and apparatus for detecting the endpoint in chemical-mechanical polishing of semiconductor wafers
US5738567A (en) 1996-08-20 1998-04-14 Micron Technology, Inc. Polishing pad for chemical-mechanical planarization of a semiconductor wafer
US6111634A (en) 1997-05-28 2000-08-29 Lam Research Corporation Method and apparatus for in-situ monitoring of thickness using a multi-wavelength spectrometer during chemical-mechanical polishing
US6146248A (en) 1997-05-28 2000-11-14 Lam Research Corporation Method and apparatus for in-situ end-point detection and optimization of a chemical-mechanical polishing process using a linear polisher
US6108091A (en) 1997-05-28 2000-08-22 Lam Research Corporation Method and apparatus for in-situ monitoring of thickness during chemical-mechanical polishing
US6159234A (en) * 1997-08-01 2000-12-12 Peter M. Bonutti Method and apparatus for securing a suture
US6068539A (en) 1998-03-10 2000-05-30 Lam Research Corporation Wafer polishing device with movable window
US6159073A (en) 1998-11-02 2000-12-12 Applied Materials, Inc. Method and apparatus for measuring substrate layer thickness during chemical mechanical polishing
US6280289B1 (en) 1998-11-02 2001-08-28 Applied Materials, Inc. Method and apparatus for detecting an end-point in chemical mechanical polishing of metal layers
US6247998B1 (en) 1999-01-25 2001-06-19 Applied Materials, Inc. Method and apparatus for determining substrate layer thickness during chemical mechanical polishing
US6190234B1 (en) 1999-01-25 2001-02-20 Applied Materials, Inc. Endpoint detection with light beams of different wavelengths
US6179709B1 (en) 1999-02-04 2001-01-30 Applied Materials, Inc. In-situ monitoring of linear substrate polishing operations
US6213845B1 (en) 1999-04-26 2001-04-10 Micron Technology, Inc. Apparatus for in-situ optical endpointing on web-format planarizing machines in mechanical or chemical-mechanical planarization of microelectronic-device substrate assemblies and methods for making and using same
US6224460B1 (en) 1999-06-30 2001-05-01 Vlsi Technology, Inc. Laser interferometry endpoint detection with windowless polishing pad for chemical mechanical polishing process
US6171181B1 (en) 1999-08-17 2001-01-09 Rodel Holdings, Inc. Molded polishing pad having integral window
US6524164B1 (en) 1999-09-14 2003-02-25 Applied Materials, Inc. Polishing pad with transparent window having reduced window leakage for a chemical mechanical polishing apparatus
US6383058B1 (en) 2000-01-28 2002-05-07 Applied Materials, Inc. Adaptive endpoint detection for chemical mechanical polishing
US6485354B1 (en) 2000-06-09 2002-11-26 Strasbaugh Polishing pad with built-in optical sensor
US6336841B1 (en) 2001-03-29 2002-01-08 Macronix International Co. Ltd. Method of CMP endpoint detection
US6875077B2 (en) 2002-03-18 2005-04-05 Raytech Innovative Solutions, Inc. Polishing pad for use in chemical/mechanical planarization of semiconductor wafers having a transparent window for end-point determination and method of making
CN100424830C (zh) 2004-04-23 2008-10-08 Jsr株式会社 用于抛光半导体晶片的抛光垫、层叠体和方法
TWI256697B (en) * 2004-07-08 2006-06-11 Advanced Ion Beam Technology I Method for preventing wafer defect for a batch-type ion implanter spinning direction particle
US7182670B2 (en) 2004-09-22 2007-02-27 Rohm And Haas Electronic Materials Cmp Holdings, Inc. CMP pad having a streamlined windowpane
JP5309558B2 (ja) 2007-12-26 2013-10-09 トヨタ自動車株式会社 燃料電池システム
JP5138531B2 (ja) 2008-10-08 2013-02-06 アスモ株式会社 車両用ワイパ

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