DE69702195T2 - Schieberegister-flashseitenpuffer mit mehreren bits pro zelle - Google Patents

Schieberegister-flashseitenpuffer mit mehreren bits pro zelle

Info

Publication number
DE69702195T2
DE69702195T2 DE69702195T DE69702195T DE69702195T2 DE 69702195 T2 DE69702195 T2 DE 69702195T2 DE 69702195 T DE69702195 T DE 69702195T DE 69702195 T DE69702195 T DE 69702195T DE 69702195 T2 DE69702195 T2 DE 69702195T2
Authority
DE
Germany
Prior art keywords
bits per
per cell
side buffer
several bits
flash side
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69702195T
Other languages
English (en)
Other versions
DE69702195D1 (de
Inventor
Stewart Bill
Prakash Gutala
Qimeng Derek Zhou
Shichang Su
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Spansion LLC
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Application granted granted Critical
Publication of DE69702195D1 publication Critical patent/DE69702195D1/de
Publication of DE69702195T2 publication Critical patent/DE69702195T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C2211/00—Indexing scheme relating to digital stores characterized by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C2211/56—Indexing scheme relating to G11C11/56 and sub-groups for features not covered by these groups
    • G11C2211/564—Miscellaneous aspects
    • G11C2211/5642—Multilevel memory with buffers, latches, registers at input or output
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/04—Arrangements for selecting an address in a digital store using a sequential addressing device, e.g. shift register, counter
DE69702195T 1996-06-24 1997-01-31 Schieberegister-flashseitenpuffer mit mehreren bits pro zelle Expired - Lifetime DE69702195T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/669,116 US5724284A (en) 1996-06-24 1996-06-24 Multiple bits-per-cell flash shift register page buffer
PCT/US1997/001874 WO1997050090A1 (en) 1996-06-24 1997-01-31 A multiple bits-per-cell flash shift register page buffer

Publications (2)

Publication Number Publication Date
DE69702195D1 DE69702195D1 (de) 2000-07-06
DE69702195T2 true DE69702195T2 (de) 2001-02-22

Family

ID=24685094

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69702195T Expired - Lifetime DE69702195T2 (de) 1996-06-24 1997-01-31 Schieberegister-flashseitenpuffer mit mehreren bits pro zelle

Country Status (5)

Country Link
US (1) US5724284A (de)
EP (1) EP0907955B1 (de)
DE (1) DE69702195T2 (de)
TW (1) TW364997B (de)
WO (1) WO1997050090A1 (de)

Families Citing this family (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5973967A (en) * 1997-01-03 1999-10-26 Programmable Microelectronics Corporation Page buffer having negative voltage level shifter
US5933370A (en) * 1998-01-09 1999-08-03 Information Storage Devices, Inc. Trimbit circuit for flash memory
US6065760A (en) * 1998-07-06 2000-05-23 Weygandt; James H. Interchangeable skate wheel bearing assembly
US6002611A (en) * 1998-07-22 1999-12-14 Halo Lsi Design & Device Technology, Inc. Fast, low current program with auto-program for flash memory
KR100319559B1 (ko) * 1999-11-01 2002-01-05 윤종용 문턱 전압 분포들 사이의 마진을 일정하게 유지할 수 있는멀티-스테이트 불휘발성 반도체 메모리 장치
FR2803080A1 (fr) * 1999-12-22 2001-06-29 St Microelectronics Sa Memoire flash programmable page par page
US7056123B2 (en) * 2001-07-16 2006-06-06 Immersion Corporation Interface apparatus with cable-driven force feedback and grounded actuators
US7042770B2 (en) 2001-07-23 2006-05-09 Samsung Electronics Co., Ltd. Memory devices with page buffer having dual registers and method of using the same
US6621739B2 (en) * 2002-01-18 2003-09-16 Sandisk Corporation Reducing the effects of noise in non-volatile memories through multiple reads
US6836432B1 (en) * 2002-02-11 2004-12-28 Advanced Micro Devices, Inc. Partial page programming of multi level flash
US6901498B2 (en) 2002-12-09 2005-05-31 Sandisk Corporation Zone boundary adjustment for defects in non-volatile memories
US6775184B1 (en) * 2003-01-21 2004-08-10 Nexflash Technologies, Inc. Nonvolatile memory integrated circuit having volatile utility and buffer memories, and method of operation thereof
US7023735B2 (en) * 2003-06-17 2006-04-04 Ramot At Tel-Aviv University Ltd. Methods of increasing the reliability of a flash memory
DE602004010239T2 (de) * 2004-05-20 2008-09-25 Stmicroelectronics S.R.L., Agrate Brianza Verbesserter Seitenspeicher für eine programmierbare Speichervorrichtung
KR100609568B1 (ko) * 2004-07-15 2006-08-08 에스티마이크로일렉트로닉스 엔.브이. 비휘발성 메모리 장치의 페이지 버퍼 및 이를 이용한프로그램 방법과 독출 방법
KR100680478B1 (ko) * 2005-03-22 2007-02-08 주식회사 하이닉스반도체 면적이 감소된 플래시 메모리 장치와 그 액세스 제어 방법
US7876613B2 (en) 2006-05-18 2011-01-25 Samsung Electronics Co., Ltd. Multi-bit flash memory devices having a single latch structure and related programming methods, systems and memory cards
KR100778082B1 (ko) 2006-05-18 2007-11-21 삼성전자주식회사 단일의 래치 구조를 갖는 멀티-비트 플래시 메모리 장치,그것의 프로그램 방법, 그리고 그것을 포함하는 메모리카드
KR100919156B1 (ko) 2006-08-24 2009-09-28 삼성전자주식회사 멀티-비트 플래시 메모리 장치 및 그것의 프로그램 방법
KR100769770B1 (ko) * 2006-09-29 2007-10-23 주식회사 하이닉스반도체 메모리 장치의 페이지 버퍼 회로 및 프로그램 방법
US8284749B2 (en) * 2008-03-10 2012-10-09 Comtech Mobile Datacom Corporation Time slot synchronized, flexible bandwidth communication system
US8245515B2 (en) * 2008-08-06 2012-08-21 General Electric Company Transition duct aft end frame cooling and related method
KR101928723B1 (ko) * 2009-11-20 2018-12-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101126514B1 (ko) * 2009-12-31 2012-03-29 주식회사 하이닉스반도체 반도체 메모리 장치 및 그 독출 방법
US8416624B2 (en) 2010-05-21 2013-04-09 SanDisk Technologies, Inc. Erase and programming techniques to reduce the widening of state distributions in non-volatile memories

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4903242A (en) * 1987-05-06 1990-02-20 Nec Corporation Serial access memory circuit with improved serial addressing circuit composed of a shift register
US5200925A (en) * 1988-07-29 1993-04-06 Mitsubishi Denki Kabushiki Kaisha Serial access semiconductor memory device and operating method therefor
US5198999A (en) * 1988-09-12 1993-03-30 Kabushiki Kaisha Toshiba Serial input/output semiconductor memory including an output data latch circuit
US5172338B1 (en) * 1989-04-13 1997-07-08 Sandisk Corp Multi-state eeprom read and write circuits and techniques
US5218569A (en) * 1991-02-08 1993-06-08 Banks Gerald J Electrically alterable non-volatile memory with n-bits per memory cell
JP2554816B2 (ja) * 1992-02-20 1996-11-20 株式会社東芝 半導体記憶装置
JPH08115598A (ja) * 1994-10-18 1996-05-07 Mitsubishi Denki Semiconductor Software Kk 不揮発性半導体記憶装置及び半導体装置

Also Published As

Publication number Publication date
WO1997050090A1 (en) 1997-12-31
TW364997B (en) 1999-07-21
EP0907955A1 (de) 1999-04-14
EP0907955B1 (de) 2000-05-31
DE69702195D1 (de) 2000-07-06
US5724284A (en) 1998-03-03

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Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: SPANSION LLC (N.D.GES.D. STAATES DELAWARE), SU, US