DE69702196D1 - Transistoren mit schwebenden gattern als wählgatter gebrauchender nand-flash-speicher und vorspannungsverfahren dazu - Google Patents
Transistoren mit schwebenden gattern als wählgatter gebrauchender nand-flash-speicher und vorspannungsverfahren dazuInfo
- Publication number
- DE69702196D1 DE69702196D1 DE69702196T DE69702196T DE69702196D1 DE 69702196 D1 DE69702196 D1 DE 69702196D1 DE 69702196 T DE69702196 T DE 69702196T DE 69702196 T DE69702196 T DE 69702196T DE 69702196 D1 DE69702196 D1 DE 69702196D1
- Authority
- DE
- Germany
- Prior art keywords
- gates
- nand
- transistors
- flash memory
- memory used
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/668,632 US5793677A (en) | 1996-06-18 | 1996-06-18 | Using floating gate devices as select gate devices for NAND flash memory and its bias scheme |
PCT/US1997/005218 WO1997049089A1 (en) | 1996-06-18 | 1997-03-28 | Nand flash memory using floating gate transistors as select gate devices and its bias scheme |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69702196D1 true DE69702196D1 (de) | 2000-07-06 |
DE69702196T2 DE69702196T2 (de) | 2001-01-18 |
Family
ID=24683137
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69702196T Expired - Lifetime DE69702196T2 (de) | 1996-06-18 | 1997-03-28 | Transistoren mit schwebenden gattern als wählgatter gebrauchender nand-flash-speicher und vorspannungsverfahren dazu |
Country Status (5)
Country | Link |
---|---|
US (1) | US5793677A (de) |
EP (1) | EP0907956B1 (de) |
DE (1) | DE69702196T2 (de) |
TW (1) | TW334591B (de) |
WO (1) | WO1997049089A1 (de) |
Families Citing this family (30)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100253868B1 (ko) * | 1995-11-13 | 2000-05-01 | 니시무로 타이죠 | 불휘발성 반도체기억장치 |
US5912489A (en) * | 1996-06-18 | 1999-06-15 | Advanced Micro Devices, Inc. | Dual source side polysilicon select gate structure utilizing single tunnel oxide for NAND array flash memory |
US5978267A (en) * | 1998-10-20 | 1999-11-02 | Advanced Micro Devices, Inc. | Bit line biasing method to eliminate program disturbance in a non-volatile memory device and memory device employing the same |
JP2002016238A (ja) * | 2000-06-29 | 2002-01-18 | Mitsubishi Electric Corp | 半導体装置 |
JP4005895B2 (ja) | 2002-09-30 | 2007-11-14 | 株式会社東芝 | 不揮発性半導体メモリ装置 |
JP4537680B2 (ja) * | 2003-08-04 | 2010-09-01 | 株式会社東芝 | 不揮発性半導体記憶装置及びその動作方法、製造方法、半導体集積回路及びシステム |
US7466590B2 (en) * | 2004-02-06 | 2008-12-16 | Sandisk Corporation | Self-boosting method for flash memory cells |
US7161833B2 (en) | 2004-02-06 | 2007-01-09 | Sandisk Corporation | Self-boosting system for flash memory cells |
US7120059B2 (en) * | 2004-07-06 | 2006-10-10 | Macronix International Co., Ltd. | Memory array including multiple-gate charge trapping non-volatile cells |
US8482052B2 (en) | 2005-01-03 | 2013-07-09 | Macronix International Co., Ltd. | Silicon on insulator and thin film transistor bandgap engineered split gate memory |
US7473589B2 (en) | 2005-12-09 | 2009-01-06 | Macronix International Co., Ltd. | Stacked thin film transistor, non-volatile memory devices and methods for fabricating the same |
KR100754894B1 (ko) * | 2005-04-20 | 2007-09-04 | 삼성전자주식회사 | 더미 메모리 셀을 가지는 낸드 플래시 메모리 장치 |
US7436703B2 (en) * | 2005-12-27 | 2008-10-14 | Sandisk Corporation | Active boosting to minimize capacitive coupling effect between adjacent gates of flash memory devices |
US7362615B2 (en) * | 2005-12-27 | 2008-04-22 | Sandisk Corporation | Methods for active boosting to minimize capacitive coupling effect between adjacent gates of flash memory devices |
DE102006011688B4 (de) * | 2006-03-14 | 2008-09-11 | Infineon Technologies Ag | Speicherzelle, Speicher mit einer Speicherzelle und Verfahren zum Einschreiben von Daten in eine Speicherzelle |
EP1835509A1 (de) | 2006-03-14 | 2007-09-19 | Qimonda AG | Speicherzelle, Speicher mit einer Speicherzelle und Verfahren zum Einschreiben von Daten in eine Speicherzelle |
US7511995B2 (en) * | 2006-03-30 | 2009-03-31 | Sandisk Corporation | Self-boosting system with suppression of high lateral electric fields |
US7428165B2 (en) * | 2006-03-30 | 2008-09-23 | Sandisk Corporation | Self-boosting method with suppression of high lateral electric fields |
WO2007117869A2 (en) * | 2006-03-30 | 2007-10-18 | Sandisk Corporation | Self-boosting system with suppression of high lateral electric fields |
US7286408B1 (en) | 2006-05-05 | 2007-10-23 | Sandisk Corporation | Boosting methods for NAND flash memory |
US7436709B2 (en) * | 2006-05-05 | 2008-10-14 | Sandisk Corporation | NAND flash memory with boosting |
CN101454893A (zh) * | 2006-06-29 | 2009-06-10 | 英特尔公司 | 具有可变漏电压的非易失性存储器 |
US7586157B2 (en) * | 2006-10-17 | 2009-09-08 | Sandisk Corporation | Non-volatile memory with dual voltage select gate structure |
WO2008048813A1 (en) * | 2006-10-17 | 2008-04-24 | Sandisk Corporation | Non-volatile memory with dual voltage select gate structure |
US7691710B2 (en) * | 2006-10-17 | 2010-04-06 | Sandisk Corporation | Fabricating non-volatile memory with dual voltage select gate structure |
US7616490B2 (en) * | 2006-10-17 | 2009-11-10 | Sandisk Corporation | Programming non-volatile memory with dual voltage select gate structure |
US9240405B2 (en) | 2011-04-19 | 2016-01-19 | Macronix International Co., Ltd. | Memory with off-chip controller |
US8611158B2 (en) * | 2011-08-30 | 2013-12-17 | Elpida Memory, Inc. | Systems and methods for erasing charge-trap flash memory |
US9941293B1 (en) | 2016-10-12 | 2018-04-10 | Sandisk Technologies Llc | Select transistors with tight threshold voltage in 3D memory |
US11211399B2 (en) | 2019-08-15 | 2021-12-28 | Micron Technology, Inc. | Electronic apparatus with an oxide-only tunneling structure by a select gate tier, and related methods |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5126808A (en) * | 1989-10-23 | 1992-06-30 | Advanced Micro Devices, Inc. | Flash EEPROM array with paged erase architecture |
KR950000273B1 (ko) * | 1992-02-21 | 1995-01-12 | 삼성전자 주식회사 | 불휘발성 반도체 메모리장치 및 그 최적화 기입방법 |
US5319593A (en) * | 1992-12-21 | 1994-06-07 | National Semiconductor Corp. | Memory array with field oxide islands eliminated and method |
KR960000616B1 (ko) * | 1993-01-13 | 1996-01-10 | 삼성전자주식회사 | 불휘발성 반도체 메모리 장치 |
KR960006722B1 (ko) * | 1993-03-12 | 1996-05-22 | 삼성전자주식회사 | 낸드형 쎌구조를 가지는 불휘발성 반도체집적회로 |
JP3207592B2 (ja) * | 1993-03-19 | 2001-09-10 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP2825407B2 (ja) * | 1993-04-01 | 1998-11-18 | 株式会社東芝 | 不揮発性半導体記憶装置 |
-
1996
- 1996-06-18 US US08/668,632 patent/US5793677A/en not_active Expired - Lifetime
- 1996-08-16 TW TW085109877A patent/TW334591B/zh not_active IP Right Cessation
-
1997
- 1997-03-28 EP EP97917123A patent/EP0907956B1/de not_active Expired - Lifetime
- 1997-03-28 WO PCT/US1997/005218 patent/WO1997049089A1/en active IP Right Grant
- 1997-03-28 DE DE69702196T patent/DE69702196T2/de not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5793677A (en) | 1998-08-11 |
EP0907956B1 (de) | 2000-05-31 |
WO1997049089A1 (en) | 1997-12-24 |
DE69702196T2 (de) | 2001-01-18 |
EP0907956A1 (de) | 1999-04-14 |
TW334591B (en) | 1998-06-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: SPANSION LLC (N.D.GES.D. STAATES DELAWARE), SU, US |