DE69707735T2 - Vorrichtung zum Verdampfen einer Flüssigkeit und Gasausstosseinrichtung - Google Patents

Vorrichtung zum Verdampfen einer Flüssigkeit und Gasausstosseinrichtung

Info

Publication number
DE69707735T2
DE69707735T2 DE69707735T DE69707735T DE69707735T2 DE 69707735 T2 DE69707735 T2 DE 69707735T2 DE 69707735 T DE69707735 T DE 69707735T DE 69707735 T DE69707735 T DE 69707735T DE 69707735 T2 DE69707735 T2 DE 69707735T2
Authority
DE
Germany
Prior art keywords
evaporating
liquid
gas ejection
ejection device
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69707735T
Other languages
English (en)
Other versions
DE69707735D1 (de
Inventor
Yukio Fukunaga
Takeshi Murakami
Naoaki Ogure
Akihisa Hongo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Application granted granted Critical
Publication of DE69707735D1 publication Critical patent/DE69707735D1/de
Publication of DE69707735T2 publication Critical patent/DE69707735T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/4557—Heated nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4486—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by producing an aerosol and subsequent evaporation of the droplets or particles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
DE69707735T 1996-04-05 1997-04-04 Vorrichtung zum Verdampfen einer Flüssigkeit und Gasausstosseinrichtung Expired - Fee Related DE69707735T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11028296 1996-04-05

Publications (2)

Publication Number Publication Date
DE69707735D1 DE69707735D1 (de) 2001-12-06
DE69707735T2 true DE69707735T2 (de) 2002-08-01

Family

ID=14531747

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69707735T Expired - Fee Related DE69707735T2 (de) 1996-04-05 1997-04-04 Vorrichtung zum Verdampfen einer Flüssigkeit und Gasausstosseinrichtung

Country Status (5)

Country Link
US (1) US6036783A (de)
EP (1) EP0799907B1 (de)
KR (1) KR970072043A (de)
DE (1) DE69707735T2 (de)
TW (1) TW322602B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009049839A1 (de) * 2009-10-16 2011-12-15 Calyxo Gmbh Gasverdampfer für Beschichtungsanlagen

Families Citing this family (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6409839B1 (en) * 1997-06-02 2002-06-25 Msp Corporation Method and apparatus for vapor generation and film deposition
JPH11312649A (ja) * 1998-04-30 1999-11-09 Nippon Asm Kk Ｃｖｄ装置
US6210485B1 (en) * 1998-07-21 2001-04-03 Applied Materials, Inc. Chemical vapor deposition vaporizer
US6358323B1 (en) 1998-07-21 2002-03-19 Applied Materials, Inc. Method and apparatus for improved control of process and purge material in a substrate processing system
US20030101938A1 (en) * 1998-10-27 2003-06-05 Applied Materials, Inc. Apparatus for the deposition of high dielectric constant films
JP3470055B2 (ja) * 1999-01-22 2003-11-25 株式会社渡邊商行 Ｍｏｃｖｄ用気化器及び原料溶液の気化方法
US6267820B1 (en) * 1999-02-12 2001-07-31 Applied Materials, Inc. Clog resistant injection valve
DE19921744B4 (de) * 1999-05-11 2008-04-30 Applied Materials Gmbh & Co. Kg Verfahren zum Transport von mindestens einer dampfförmigen Substanz durch die Wand einer Vakuumkammer in die Vakuumkammer sowie Vorrichtung zur Durchführung des Verfahrens und deren Verwendung
US6548112B1 (en) * 1999-11-18 2003-04-15 Tokyo Electron Limited Apparatus and method for delivery of precursor vapor from low vapor pressure liquid sources to a CVD chamber
US6596085B1 (en) 2000-02-01 2003-07-22 Applied Materials, Inc. Methods and apparatus for improved vaporization of deposition material in a substrate processing system
US6572706B1 (en) * 2000-06-19 2003-06-03 Simplus Systems Corporation Integrated precursor delivery system
US6299692B1 (en) * 2000-07-21 2001-10-09 Applied Materials, Inc. Head for vaporizing and flowing various precursor materials onto semiconductor wafers during chemical vapor deposition
US6302965B1 (en) * 2000-08-15 2001-10-16 Applied Materials, Inc. Dispersion plate for flowing vaporizes compounds used in chemical vapor deposition of films onto semiconductor surfaces
KR100881681B1 (ko) * 2001-01-18 2009-02-06 가부시키가이샤 와타나베 쇼코 기화기 및 이를 이용한 각종 장치와 기화 방법
AU2002242304A1 (en) * 2001-02-28 2002-09-12 Porter Instrument Company, Inc. Manifolded fluid delivery system
US6827974B2 (en) * 2002-03-29 2004-12-07 Pilkington North America, Inc. Method and apparatus for preparing vaporized reactants for chemical vapor deposition
JP4202856B2 (ja) * 2003-07-25 2008-12-24 東京エレクトロン株式会社 ガス反応装置
EP1747302B1 (de) * 2004-05-20 2012-12-26 Akzo Nobel N.V. Bubbler zur konstanten dampfzufuhr einer festen chemikalie
US20070194470A1 (en) * 2006-02-17 2007-08-23 Aviza Technology, Inc. Direct liquid injector device
CN101454478A (zh) * 2006-04-20 2009-06-10 壳牌可再生能源有限公司 沉积材料的热蒸发设备、用途和方法
US8778079B2 (en) * 2007-10-11 2014-07-15 Valence Process Equipment, Inc. Chemical vapor deposition reactor
JP2009246168A (ja) * 2008-03-31 2009-10-22 Tokyo Electron Ltd 液体原料気化器及びそれを用いた成膜装置
JP5603065B2 (ja) * 2009-01-30 2014-10-08 パナソニックヘルスケア株式会社 滅菌物質供給装置およびアイソレータ
JP5614935B2 (ja) 2009-02-03 2014-10-29 株式会社渡辺商行 気化器、この気化器を用いたｍｏｃｖｄ用気化器、これら気化器若しくはｍｏｃｖｄ用気化器に用いられるセンターロッド、及びキャリアガスの分
KR101234409B1 (ko) * 2009-09-30 2013-02-18 시케이디 가부시키가이샤 액체 기화 시스템
US20120276291A1 (en) * 2011-04-28 2012-11-01 Bird Chester D Methods and Apparatuses for Reducing Gelation of Glass Precursor Materials During Vaporization
US9574268B1 (en) * 2011-10-28 2017-02-21 Asm America, Inc. Pulsed valve manifold for atomic layer deposition
US9388492B2 (en) 2011-12-27 2016-07-12 Asm America, Inc. Vapor flow control apparatus for atomic layer deposition
US10113232B2 (en) 2014-07-31 2018-10-30 Lam Research Corporation Azimuthal mixer
US9951421B2 (en) * 2014-12-10 2018-04-24 Lam Research Corporation Inlet for effective mixing and purging
US9877514B2 (en) 2015-09-21 2018-01-30 Cloud V Enterprises Vaporizer with electronically heated nail
US10662527B2 (en) 2016-06-01 2020-05-26 Asm Ip Holding B.V. Manifolds for uniform vapor deposition
TWI616555B (zh) * 2017-01-17 2018-03-01 漢民科技股份有限公司 應用於半導體設備之噴氣裝置
US11492701B2 (en) 2019-03-19 2022-11-08 Asm Ip Holding B.V. Reactor manifolds
US11788190B2 (en) 2019-07-05 2023-10-17 Asm Ip Holding B.V. Liquid vaporizer
US11946136B2 (en) 2019-09-20 2024-04-02 Asm Ip Holding B.V. Semiconductor processing device
KR20210048408A (ko) 2019-10-22 2021-05-03 에이에스엠 아이피 홀딩 비.브이. 반도체 증착 반응기 매니폴드

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4847469A (en) * 1987-07-15 1989-07-11 The Boc Group, Inc. Controlled flow vaporizer
JP2796975B2 (ja) * 1988-11-28 1998-09-10 株式会社高純度化学研究所 液体原料気化装置
KR940002439B1 (ko) * 1990-03-09 1994-03-24 니뽄 덴신 덴와 가부시끼가이샤 금속 박막 성장방법 및 장치
US5252134A (en) * 1991-05-31 1993-10-12 Stauffer Craig M Integrated delivery system for chemical vapor from non-gaseous sources for semiconductor processing
DE4124018C1 (de) * 1991-07-19 1992-11-19 Leybold Ag, 6450 Hanau, De
JPH0582507A (ja) * 1991-09-18 1993-04-02 Applied Materials Japan Kk 液体気化バルブ
JPH06291040A (ja) * 1992-03-03 1994-10-18 Rintetsuku:Kk 液体気化供給方法と液体気化供給器
JP3118493B2 (ja) * 1993-04-27 2000-12-18 菱電セミコンダクタシステムエンジニアリング株式会社 液体原料用ｃｖｄ装置
US5435850A (en) * 1993-09-17 1995-07-25 Fei Company Gas injection system

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102009049839A1 (de) * 2009-10-16 2011-12-15 Calyxo Gmbh Gasverdampfer für Beschichtungsanlagen
DE102009049839B4 (de) * 2009-10-16 2012-12-06 Calyxo Gmbh Gasverdampfer für Beschichtungsanlagen sowie Verfahren zu dessen Betreiben

Also Published As

Publication number Publication date
EP0799907A1 (de) 1997-10-08
EP0799907B1 (de) 2001-10-31
US6036783A (en) 2000-03-14
DE69707735D1 (de) 2001-12-06
KR970072043A (ko) 1997-11-07
TW322602B (de) 1997-12-11

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee