DE69709581D1 - Oberflächenemittierender Laser mit mehreren Emissionswellenlängen und breitbandigem Bragg-Spiegel - Google Patents

Oberflächenemittierender Laser mit mehreren Emissionswellenlängen und breitbandigem Bragg-Spiegel

Info

Publication number
DE69709581D1
DE69709581D1 DE69709581T DE69709581T DE69709581D1 DE 69709581 D1 DE69709581 D1 DE 69709581D1 DE 69709581 T DE69709581 T DE 69709581T DE 69709581 T DE69709581 T DE 69709581T DE 69709581 D1 DE69709581 D1 DE 69709581D1
Authority
DE
Germany
Prior art keywords
emitting laser
emission wavelengths
bragg mirror
multiple emission
broadband bragg
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69709581T
Other languages
English (en)
Other versions
DE69709581T2 (de
Inventor
Thomas L Paoli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xerox Corp
Original Assignee
Xerox Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xerox Corp filed Critical Xerox Corp
Publication of DE69709581D1 publication Critical patent/DE69709581D1/de
Application granted granted Critical
Publication of DE69709581T2 publication Critical patent/DE69709581T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H01S5/2063—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion obtained by particle bombardment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/3413—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers
    • H01S5/3414—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers comprising partially disordered wells or barriers by vacancy induced interdiffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
DE69709581T 1996-07-08 1997-07-01 Oberflächenemittierender Laser mit mehreren Emissionswellenlängen und breitbandigem Bragg-Spiegel Expired - Lifetime DE69709581T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/676,751 US5699375A (en) 1996-07-08 1996-07-08 Multiple wavelength, surface emitting laser with broad bandwidth distributed Bragg reflectors

Publications (2)

Publication Number Publication Date
DE69709581D1 true DE69709581D1 (de) 2002-02-21
DE69709581T2 DE69709581T2 (de) 2002-08-22

Family

ID=24715833

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69709581T Expired - Lifetime DE69709581T2 (de) 1996-07-08 1997-07-01 Oberflächenemittierender Laser mit mehreren Emissionswellenlängen und breitbandigem Bragg-Spiegel

Country Status (4)

Country Link
US (1) US5699375A (de)
EP (1) EP0818860B1 (de)
JP (1) JP3790610B2 (de)
DE (1) DE69709581T2 (de)

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5796769A (en) * 1996-08-19 1998-08-18 Motorola, Inc. Red light vertical cavity surface emitting laser
US5838705A (en) * 1996-11-04 1998-11-17 Motorola, Inc. Light emitting device having a defect inhibition layer
US5898722A (en) * 1997-03-10 1999-04-27 Motorola, Inc. Dual wavelength monolithically integrated vertical cavity surface emitting lasers and method of fabrication
US6256333B1 (en) * 1997-12-12 2001-07-03 Honeywell Inc. VCSEL structure insensitive to mobile hydrogen
US6064683A (en) * 1997-12-12 2000-05-16 Honeywell Inc. Bandgap isolated light emitter
US6117699A (en) * 1998-04-10 2000-09-12 Hewlett-Packard Company Monolithic multiple wavelength VCSEL array
TW447184B (en) * 1999-02-08 2001-07-21 Sharp Kk Semiconductor laser device and method of manufacturing the same
KR100538213B1 (ko) * 1999-02-27 2005-12-21 삼성전자주식회사 표면광 레이저 어레이 및 제조방법
US6465811B1 (en) 1999-07-12 2002-10-15 Gore Enterprise Holdings, Inc. Low-capacitance bond pads for high speed devices
JP2001244570A (ja) * 2000-02-29 2001-09-07 Sony Corp 半導体レーザ、レーザカプラおよびデータ再生装置、データ記録装置ならびに半導体レーザの製造方法
KR100708081B1 (ko) * 2000-05-18 2007-04-16 삼성전자주식회사 선택적 산화법에 의한 표면광 레이저의 어퍼쳐 제조 장치및 방법
KR100727907B1 (ko) * 2000-07-20 2007-06-14 삼성전자주식회사 다중 파장 표면광 레이저 및 그 제조방법
GB0018576D0 (en) * 2000-07-27 2000-09-13 Univ Glasgow Improved semiconductor laser
KR100754156B1 (ko) * 2000-08-23 2007-09-03 삼성전자주식회사 다중 파장 표면광 레이저 및 그 제조방법
JP2002141604A (ja) * 2000-11-07 2002-05-17 Sony Corp 半導体レーザ
US6636544B2 (en) * 2000-12-06 2003-10-21 Applied Optoelectronics, Inc. Overlapping wavelength-tunable vertical cavity surface-emitting laser (VCSEL) arrays
US6724796B2 (en) * 2000-12-06 2004-04-20 Applied Optoelectronics, Inc. Modified distributed bragg reflector (DBR) for vertical cavity surface-emitting laser (VCSEL) resonant wavelength tuning sensitivity control
US6696307B2 (en) 2000-12-06 2004-02-24 Applied Optoelectronics, Inc. Patterned phase shift layers for wavelength-selectable vertical cavity surface-emitting laser (VCSEL) arrays
US6806114B1 (en) * 2001-11-07 2004-10-19 Nova Crystals, Inc. Broadly tunable distributed bragg reflector structure processing
US6888666B1 (en) 2001-11-16 2005-05-03 Dakota Investment Group, Inc. Dynamically reconfigurable optical amplification element
US6731850B1 (en) 2001-11-16 2004-05-04 Fox-Tek Single-waveguide integrated wavelength demux photodetector and method of making it
US6594295B1 (en) * 2001-11-16 2003-07-15 Fox-Tek, Inc. Semiconductor laser with disordered and non-disordered quantum well regions
US6628686B1 (en) 2001-11-16 2003-09-30 Fox-Tek, Inc Integrated multi-wavelength and wideband lasers
US6693934B2 (en) * 2001-12-28 2004-02-17 Honeywell International Inc. Wavelength division multiplexed vertical cavity surface emitting laser array
US6738409B2 (en) * 2001-12-28 2004-05-18 Honeywell International Inc. Current confinement, capacitance reduction and isolation of VCSELs using deep elemental traps
US6618414B1 (en) * 2002-03-25 2003-09-09 Optical Communication Products, Inc. Hybrid vertical cavity laser with buried interface
JP2004079828A (ja) * 2002-08-20 2004-03-11 Sharp Corp Ｉｉｉ−ｖ族化合物半導体レーザ素子とその製造方法
JP2004207480A (ja) * 2002-12-25 2004-07-22 Pioneer Electronic Corp 半導体レーザ装置及びその製造方法
JP2004304111A (ja) * 2003-04-01 2004-10-28 Sharp Corp 多波長レーザ装置
JP2004349286A (ja) * 2003-05-20 2004-12-09 Matsushita Electric Ind Co Ltd 半導体レーザ素子、半導体レーザ装置、光ピックアップ装置及び半導体レーザ装置の製造方法
DE102004026125A1 (de) * 2004-05-28 2005-12-22 Osram Opto Semiconductors Gmbh Optoelektronisches Bauteil und Verfahren zu dessen Herstellung
US7545560B2 (en) * 2004-10-08 2009-06-09 Finisar Corporation AlAs/GaAs alloy to enhance n-type doping in AlGaAs distributed bragg reflector
US20070041416A1 (en) * 2005-08-19 2007-02-22 Koelle Bernhard U Tunable long-wavelength VCSEL system
DE102006051745B4 (de) * 2006-09-28 2024-02-08 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung LED-Halbleiterkörper und Verwendung eines LED-Halbleiterkörpers
US10033154B2 (en) 2010-03-03 2018-07-24 Furukawa Electronic Co., Ltd. Semiconductor optical element, semiconductor laser element, and method for manufacturing semiconductor optical element and semiconductor laser element, and method for manufacturing semiconductor laser module and semiconductor element
CN104995805B (zh) 2013-02-13 2018-04-20 古河电气工业株式会社 半导体光元件、半导体激光元件、及其制造方法、和半导体激光模块元件以及半导体元件的制造方法
WO2016195695A1 (en) * 2015-06-04 2016-12-08 Hewlett Packard Enterprise Development Lp Monolithic wdm vcsels with spatially varying gain peak and fabry perot wavelength
DE102017103856A1 (de) 2017-02-24 2018-08-30 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
CN113708214B (zh) * 2021-07-21 2023-07-11 湖北光安伦芯片有限公司 一种基于选区外延技术的双波长vcsel结构及其制备方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4949350A (en) * 1989-07-17 1990-08-14 Bell Communications Research, Inc. Surface emitting semiconductor laser
US5052016A (en) * 1990-05-18 1991-09-24 University Of New Mexico Resonant-periodic-gain distributed-feedback surface-emitting semiconductor laser
JPH04103186A (ja) * 1990-08-22 1992-04-06 Mitsubishi Electric Corp 半導体レーザ及びその製造方法
US5245622A (en) * 1992-05-07 1993-09-14 Bandgap Technology Corporation Vertical-cavity surface-emitting lasers with intra-cavity structures
US5319655A (en) * 1992-12-21 1994-06-07 Xerox Corporation Multiwavelength laterally-injecting-type lasers
JPH06326419A (ja) * 1993-04-20 1994-11-25 Xerox Corp モノリシック半導体発光アレイ
US5386428A (en) * 1993-11-02 1995-01-31 Xerox Corporation Stacked active region laser array for multicolor emissions
US5455429A (en) * 1993-12-29 1995-10-03 Xerox Corporation Semiconductor devices incorporating p-type and n-type impurity induced layer disordered material

Also Published As

Publication number Publication date
JPH1065278A (ja) 1998-03-06
JP3790610B2 (ja) 2006-06-28
EP0818860B1 (de) 2002-01-16
DE69709581T2 (de) 2002-08-22
EP0818860A1 (de) 1998-01-14
US5699375A (en) 1997-12-16

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