DE69720644D1 - Reinigungsvorrichtung für Vakuumleitung in einer Substrat-Bearbeitungsvorrichtung - Google Patents

Reinigungsvorrichtung für Vakuumleitung in einer Substrat-Bearbeitungsvorrichtung

Info

Publication number
DE69720644D1
DE69720644D1 DE69720644T DE69720644T DE69720644D1 DE 69720644 D1 DE69720644 D1 DE 69720644D1 DE 69720644 T DE69720644 T DE 69720644T DE 69720644 T DE69720644 T DE 69720644T DE 69720644 D1 DE69720644 D1 DE 69720644D1
Authority
DE
Germany
Prior art keywords
substrate processing
vacuum line
line cleaning
processing device
cleaning device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69720644T
Other languages
English (en)
Other versions
DE69720644T2 (de
Inventor
Ben Pang
David Cheung
Taylor, Jr
Sebastien Raoux
Mark Fodor
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of DE69720644D1 publication Critical patent/DE69720644D1/de
Application granted granted Critical
Publication of DE69720644T2 publication Critical patent/DE69720644T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D45/00—Separating dispersed particles from gases or vapours by gravity, inertia, or centrifugal forces
    • B01D45/04—Separating dispersed particles from gases or vapours by gravity, inertia, or centrifugal forces by utilising inertia
    • B01D45/06—Separating dispersed particles from gases or vapours by gravity, inertia, or centrifugal forces by utilising inertia by reversal of direction of flow
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/32—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by electrical effects other than those provided for in group B01D61/00
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
    • B01D53/34—Chemical or biological purification of waste gases
    • B01D53/46—Removing components of defined structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/087—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy
    • B01J19/088—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electric or magnetic energy giving rise to electric discharges
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
    • B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
    • B01J19/122—Incoherent waves
    • B01J19/126—Microwaves
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J19/24—Stationary reactors without moving elements inside
    • B01J19/248—Reactors comprising multiple separated flow channels
    • B01J19/249—Plate-type reactors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H01J37/32834—Exhausting
    • H01J37/32844—Treating effluent gases
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H05H1/4652—Radiofrequency discharges using inductive coupling means, e.g. coils
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2257/00—Components to be removed
    • B01D2257/20—Halogens or halogen compounds
    • B01D2257/206—Organic halogen compounds
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01D—SEPARATION
    • B01D2259/00—Type of treatment
    • B01D2259/80—Employing electric, magnetic, electromagnetic or wave energy, or particle radiation
    • B01D2259/818—Employing electrical discharges or the generation of a plasma
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/24—Stationary reactors without moving elements inside
    • B01J2219/2401—Reactors comprising multiple separate flow channels
    • B01J2219/245—Plate-type reactors
    • B01J2219/2451—Geometry of the reactor
    • B01J2219/2453—Plates arranged in parallel
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/24—Stationary reactors without moving elements inside
    • B01J2219/2401—Reactors comprising multiple separate flow channels
    • B01J2219/245—Plate-type reactors
    • B01J2219/2451—Geometry of the reactor
    • B01J2219/2456—Geometry of the plates
    • B01J2219/2458—Flat plates, i.e. plates which are not corrugated or otherwise structured, e.g. plates with cylindrical shape
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/24—Stationary reactors without moving elements inside
    • B01J2219/2401—Reactors comprising multiple separate flow channels
    • B01J2219/245—Plate-type reactors
    • B01J2219/2461—Heat exchange aspects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/24—Stationary reactors without moving elements inside
    • B01J2219/2401—Reactors comprising multiple separate flow channels
    • B01J2219/245—Plate-type reactors
    • B01J2219/2461—Heat exchange aspects
    • B01J2219/2467—Additional heat exchange means, e.g. electric resistance heaters, coils
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/24—Stationary reactors without moving elements inside
    • B01J2219/2401—Reactors comprising multiple separate flow channels
    • B01J2219/245—Plate-type reactors
    • B01J2219/2469—Feeding means
    • B01J2219/247—Feeding means for the reactants
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/24—Stationary reactors without moving elements inside
    • B01J2219/2401—Reactors comprising multiple separate flow channels
    • B01J2219/245—Plate-type reactors
    • B01J2219/2474—Mixing means, e.g. fins or baffles attached to the plates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/24—Stationary reactors without moving elements inside
    • B01J2219/2401—Reactors comprising multiple separate flow channels
    • B01J2219/245—Plate-type reactors
    • B01J2219/2475—Separation means, e.g. membranes inside the reactor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/24—Stationary reactors without moving elements inside
    • B01J2219/2401—Reactors comprising multiple separate flow channels
    • B01J2219/245—Plate-type reactors
    • B01J2219/2476—Construction materials
    • B01J2219/2483—Construction materials of the plates
    • B01J2219/2487—Ceramics
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/24—Stationary reactors without moving elements inside
    • B01J2219/2401—Reactors comprising multiple separate flow channels
    • B01J2219/245—Plate-type reactors
    • B01J2219/2491—Other constructional details
    • B01J2219/2492—Assembling means
    • B01J2219/2493—Means for assembling plates together, e.g. sealing means, screws, bolts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
    • B01J2219/24—Stationary reactors without moving elements inside
    • B01J2219/2401—Reactors comprising multiple separate flow channels
    • B01J2219/245—Plate-type reactors
    • B01J2219/2491—Other constructional details
    • B01J2219/2492—Assembling means
    • B01J2219/2496—Means for assembling modules together, e.g. casings, holders, fluidic connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/02—Details
    • H01J2237/022—Avoiding or removing foreign or contaminating particles, debris or deposits on sample or tube
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/461—Microwave discharges
    • H05H1/4622—Microwave discharges using waveguides
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H2245/00—Applications of plasma devices
    • H05H2245/10—Treatment of gases
    • H05H2245/17—Exhaust gases
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02C—CAPTURE, STORAGE, SEQUESTRATION OR DISPOSAL OF GREENHOUSE GASES [GHG]
    • Y02C20/00—Capture or disposal of greenhouse gases
    • Y02C20/30—Capture or disposal of greenhouse gases of perfluorocarbons [PFC], hydrofluorocarbons [HFC] or sulfur hexafluoride [SF6]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
DE69720644T 1996-10-30 1997-10-29 Reinigungsvorrichtung für Vakuumleitung in einer Substrat-Bearbeitungsvorrichtung Expired - Fee Related DE69720644T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/741,230 US6193802B1 (en) 1995-09-25 1996-10-30 Parallel plate apparatus for in-situ vacuum line cleaning for substrate processing equipment

Publications (2)

Publication Number Publication Date
DE69720644D1 true DE69720644D1 (de) 2003-05-15
DE69720644T2 DE69720644T2 (de) 2003-10-30

Family

ID=24979873

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69720644T Expired - Fee Related DE69720644T2 (de) 1996-10-30 1997-10-29 Reinigungsvorrichtung für Vakuumleitung in einer Substrat-Bearbeitungsvorrichtung

Country Status (6)

Country Link
US (1) US6193802B1 (de)
EP (1) EP0839930B1 (de)
JP (1) JP4146919B2 (de)
KR (1) KR100495783B1 (de)
DE (1) DE69720644T2 (de)
TW (1) TW346641B (de)

Families Citing this family (99)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6194628B1 (en) * 1995-09-25 2001-02-27 Applied Materials, Inc. Method and apparatus for cleaning a vacuum line in a CVD system
US20030164225A1 (en) * 1998-04-20 2003-09-04 Tadashi Sawayama Processing apparatus, exhaust processing process and plasma processing
US6497801B1 (en) * 1998-07-10 2002-12-24 Semitool Inc Electroplating apparatus with segmented anode array
US7160421B2 (en) * 1999-04-13 2007-01-09 Semitool, Inc. Turning electrodes used in a reactor for electrochemically processing a microelectronic workpiece
US7264698B2 (en) * 1999-04-13 2007-09-04 Semitool, Inc. Apparatus and methods for electrochemical processing of microelectronic workpieces
US7020537B2 (en) * 1999-04-13 2006-03-28 Semitool, Inc. Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece
US7438788B2 (en) * 1999-04-13 2008-10-21 Semitool, Inc. Apparatus and methods for electrochemical processing of microelectronic workpieces
US7189318B2 (en) * 1999-04-13 2007-03-13 Semitool, Inc. Tuning electrodes used in a reactor for electrochemically processing a microelectronic workpiece
US20030038035A1 (en) * 2001-05-30 2003-02-27 Wilson Gregory J. Methods and systems for controlling current in electrochemical processing of microelectronic workpieces
JP4219562B2 (ja) * 1999-04-13 2009-02-04 セミトゥール・インコーポレイテッド ワークピースを電気化学的に処理するためのシステム
US6916412B2 (en) * 1999-04-13 2005-07-12 Semitool, Inc. Adaptable electrochemical processing chamber
FI110311B (fi) * 1999-07-20 2002-12-31 Asm Microchemistry Oy Menetelmä ja laitteisto aineiden poistamiseksi kaasuista
US6255222B1 (en) * 1999-08-24 2001-07-03 Applied Materials, Inc. Method for removing residue from substrate processing chamber exhaust line for silicon-oxygen-carbon deposition process
JP2001132638A (ja) * 1999-11-10 2001-05-18 Ebara Corp トラップ装置
US20050183959A1 (en) * 2000-04-13 2005-08-25 Wilson Gregory J. Tuning electrodes used in a reactor for electrochemically processing a microelectric workpiece
US7060132B2 (en) * 2000-04-14 2006-06-13 Asm International N.V. Method and apparatus of growing a thin film
FI117978B (fi) * 2000-04-14 2007-05-15 Asm Int Menetelmä ja laitteisto ohutkalvon kasvattamiseksi alustalle
US6576202B1 (en) 2000-04-21 2003-06-10 Kin-Chung Ray Chiu Highly efficient compact capacitance coupled plasma reactor/generator and method
US6245686B1 (en) * 2000-06-05 2001-06-12 Motorola Inc. Process for forming a semiconductor device and a process for operating an apparatus
US6863019B2 (en) 2000-06-13 2005-03-08 Applied Materials, Inc. Semiconductor device fabrication chamber cleaning method and apparatus with recirculation of cleaning gas
JP4656613B2 (ja) * 2000-07-24 2011-03-23 東京エレクトロン株式会社 処理装置のメンテナンス方法
US6428673B1 (en) * 2000-07-08 2002-08-06 Semitool, Inc. Apparatus and method for electrochemical processing of a microelectronic workpiece, capable of modifying processing based on metrology
US6747734B1 (en) 2000-07-08 2004-06-08 Semitool, Inc. Apparatus and method for processing a microelectronic workpiece using metrology
US7102763B2 (en) * 2000-07-08 2006-09-05 Semitool, Inc. Methods and apparatus for processing microelectronic workpieces using metrology
US20050061676A1 (en) * 2001-03-12 2005-03-24 Wilson Gregory J. System for electrochemically processing a workpiece
US6733827B2 (en) * 2001-04-11 2004-05-11 The Procter & Gamble Co. Processes for manufacturing particles coated with activated lignosulfonate
US20020185067A1 (en) * 2001-06-07 2002-12-12 International Business Machines Corporation Apparatus and method for in-situ cleaning of a throttle valve in a CVD system
WO2003018874A2 (en) * 2001-08-31 2003-03-06 Semitool, Inc. Apparatus and methods for electrochemical processing of microelectronic workpieces
US6670071B2 (en) * 2002-01-15 2003-12-30 Quallion Llc Electric storage battery construction and method of manufacture
US6800172B2 (en) * 2002-02-22 2004-10-05 Micron Technology, Inc. Interfacial structure for semiconductor substrate processing chambers and substrate transfer chambers and for semiconductor substrate processing chambers and accessory attachments, and semiconductor substrate processor
US7390755B1 (en) 2002-03-26 2008-06-24 Novellus Systems, Inc. Methods for post etch cleans
US6814813B2 (en) 2002-04-24 2004-11-09 Micron Technology, Inc. Chemical vapor deposition apparatus
US6858264B2 (en) * 2002-04-24 2005-02-22 Micron Technology, Inc. Chemical vapor deposition methods
US6821347B2 (en) * 2002-07-08 2004-11-23 Micron Technology, Inc. Apparatus and method for depositing materials onto microelectronic workpieces
US6955725B2 (en) * 2002-08-15 2005-10-18 Micron Technology, Inc. Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces
US6936086B2 (en) * 2002-09-11 2005-08-30 Planar Systems, Inc. High conductivity particle filter
US20040108212A1 (en) * 2002-12-06 2004-06-10 Lyndon Graham Apparatus and methods for transferring heat during chemical processing of microelectronic workpieces
KR100505670B1 (ko) * 2003-02-05 2005-08-03 삼성전자주식회사 부산물 제거용 고온 유체 공급 장치를 구비한 반도체 소자제조 장치
US6926775B2 (en) * 2003-02-11 2005-08-09 Micron Technology, Inc. Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces
TW594337B (en) * 2003-02-14 2004-06-21 Quanta Display Inc Method of forming a liquid crystal display panel
US7335396B2 (en) * 2003-04-24 2008-02-26 Micron Technology, Inc. Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers
US20040235299A1 (en) * 2003-05-22 2004-11-25 Axcelis Technologies, Inc. Plasma ashing apparatus and endpoint detection process
US8580076B2 (en) 2003-05-22 2013-11-12 Lam Research Corporation Plasma apparatus, gas distribution assembly for a plasma apparatus and processes therewith
US7632379B2 (en) 2003-05-30 2009-12-15 Toshio Goto Plasma source and plasma processing apparatus
JP2004356558A (ja) * 2003-05-30 2004-12-16 Toshio Goto コーティング装置およびコーティング方法
US7235138B2 (en) * 2003-08-21 2007-06-26 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces
US7344755B2 (en) * 2003-08-21 2008-03-18 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers
US7422635B2 (en) * 2003-08-28 2008-09-09 Micron Technology, Inc. Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces
US7056806B2 (en) * 2003-09-17 2006-06-06 Micron Technology, Inc. Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces
US7282239B2 (en) * 2003-09-18 2007-10-16 Micron Technology, Inc. Systems and methods for depositing material onto microfeature workpieces in reaction chambers
US7323231B2 (en) * 2003-10-09 2008-01-29 Micron Technology, Inc. Apparatus and methods for plasma vapor deposition processes
US7581511B2 (en) * 2003-10-10 2009-09-01 Micron Technology, Inc. Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes
US7647886B2 (en) * 2003-10-15 2010-01-19 Micron Technology, Inc. Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers
US7258892B2 (en) * 2003-12-10 2007-08-21 Micron Technology, Inc. Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition
US7906393B2 (en) 2004-01-28 2011-03-15 Micron Technology, Inc. Methods for forming small-scale capacitor structures
US20050249873A1 (en) * 2004-05-05 2005-11-10 Demetrius Sarigiannis Apparatuses and methods for producing chemically reactive vapors used in manufacturing microelectronic devices
US8133554B2 (en) * 2004-05-06 2012-03-13 Micron Technology, Inc. Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces
US7699932B2 (en) * 2004-06-02 2010-04-20 Micron Technology, Inc. Reactors, systems and methods for depositing thin films onto microfeature workpieces
US7288484B1 (en) 2004-07-13 2007-10-30 Novellus Systems, Inc. Photoresist strip method for low-k dielectrics
US7202176B1 (en) * 2004-12-13 2007-04-10 Novellus Systems, Inc. Enhanced stripping of low-k films using downstream gas mixing
US8193096B2 (en) 2004-12-13 2012-06-05 Novellus Systems, Inc. High dose implantation strip (HDIS) in H2 base chemistry
US20060165873A1 (en) * 2005-01-25 2006-07-27 Micron Technology, Inc. Plasma detection and associated systems and methods for controlling microfeature workpiece deposition processes
US20060237138A1 (en) * 2005-04-26 2006-10-26 Micron Technology, Inc. Apparatuses and methods for supporting microelectronic devices during plasma-based fabrication processes
US8129281B1 (en) 2005-05-12 2012-03-06 Novellus Systems, Inc. Plasma based photoresist removal system for cleaning post ash residue
GB0522088D0 (en) * 2005-10-28 2005-12-07 Boc Group Plc Plasma abatement device
EP1816668A2 (de) * 2006-02-01 2007-08-08 FEI Company Teilchenstrahlgerät mit vrobestimmtem Arbeitsdruck
US7740768B1 (en) 2006-10-12 2010-06-22 Novellus Systems, Inc. Simultaneous front side ash and backside clean
DE102007016026A1 (de) * 2007-03-30 2008-10-02 Sig Technology Ag Vakuumbeschichtungsanlage mit Abscheidevorrichtung im Restgasstrang
US8435895B2 (en) 2007-04-04 2013-05-07 Novellus Systems, Inc. Methods for stripping photoresist and/or cleaning metal regions
DE102008009624A1 (de) * 2008-02-18 2009-08-20 Cs Clean Systems Ag Verfahren und Vorrichtung zur Reinigung der Abgase einer Prozessanlage
US7914603B2 (en) * 2008-06-26 2011-03-29 Mks Instruments, Inc. Particle trap for a plasma source
US9997325B2 (en) 2008-07-17 2018-06-12 Verity Instruments, Inc. Electron beam exciter for use in chemical analysis in processing systems
JP5460982B2 (ja) * 2008-07-30 2014-04-02 東京エレクトロン株式会社 弁体、粒子進入阻止機構、排気制御装置及び基板処理装置
US8591661B2 (en) 2009-12-11 2013-11-26 Novellus Systems, Inc. Low damage photoresist strip method for low-K dielectrics
US20100159122A1 (en) * 2008-12-19 2010-06-24 Canon Kabushiki Kaisha Deposition film forming apparatus, deposition film forming method and electrophotographic photosensitive member manufacturing method
US7993937B2 (en) * 2009-09-23 2011-08-09 Tokyo Electron Limited DC and RF hybrid processing system
WO2011072061A2 (en) * 2009-12-11 2011-06-16 Novellus Systems, Inc. Enhanced passivation process to protect silicon prior to high dose implant strip
US20110143548A1 (en) * 2009-12-11 2011-06-16 David Cheung Ultra low silicon loss high dose implant strip
US8404028B2 (en) 2011-01-18 2013-03-26 International Business Machines Corporation Vacuum trap labyrinth
US9129778B2 (en) 2011-03-18 2015-09-08 Lam Research Corporation Fluid distribution members and/or assemblies
US9613825B2 (en) 2011-08-26 2017-04-04 Novellus Systems, Inc. Photoresist strip processes for improved device integrity
EP2807902B1 (de) * 2012-01-23 2020-08-19 CONNORS, Robert W. Kompakter mikrowellenofen
US9867238B2 (en) * 2012-04-26 2018-01-09 Applied Materials, Inc. Apparatus for treating an exhaust gas in a foreline
US20140262033A1 (en) * 2013-03-13 2014-09-18 Applied Materials, Inc. Gas sleeve for foreline plasma abatement system
US9514954B2 (en) 2014-06-10 2016-12-06 Lam Research Corporation Peroxide-vapor treatment for enhancing photoresist-strip performance and modifying organic films
US10187966B2 (en) * 2015-07-24 2019-01-22 Applied Materials, Inc. Method and apparatus for gas abatement
KR102477302B1 (ko) * 2015-10-05 2022-12-13 주성엔지니어링(주) 배기가스 분해기를 가지는 기판처리장치 및 그 배기가스 처리방법
US10337105B2 (en) 2016-01-13 2019-07-02 Mks Instruments, Inc. Method and apparatus for valve deposition cleaning and prevention by plasma discharge
US10535506B2 (en) 2016-01-13 2020-01-14 Mks Instruments, Inc. Method and apparatus for deposition cleaning in a pumping line
US11332824B2 (en) * 2016-09-13 2022-05-17 Lam Research Corporation Systems and methods for reducing effluent build-up in a pumping exhaust system
KR102646623B1 (ko) * 2017-01-23 2024-03-11 에드워드 코리아 주식회사 플라즈마 발생 장치 및 가스 처리 장치
JP6479080B2 (ja) * 2017-03-30 2019-03-06 本田技研工業株式会社 ブリーザ装置
CN108533363B (zh) * 2018-06-04 2023-08-18 江苏大学 一种车载dpf在线再生系统及控制方法
JP2020033625A (ja) * 2018-08-31 2020-03-05 東京エレクトロン株式会社 成膜装置及び成膜方法
TW202104656A (zh) * 2019-03-28 2021-02-01 美商蘭姆研究公司 噴淋頭護罩
TWI721594B (zh) * 2019-10-09 2021-03-11 南韓商未來寶股份有限公司 配備冷卻流路的半導體工程反應副產物收集裝置
US11745229B2 (en) 2020-08-11 2023-09-05 Mks Instruments, Inc. Endpoint detection of deposition cleaning in a pumping line and a processing chamber
US11664197B2 (en) 2021-08-02 2023-05-30 Mks Instruments, Inc. Method and apparatus for plasma generation
CN114602653A (zh) * 2022-01-30 2022-06-10 中国人民解放军63892部队 一种电磁波除霾方法及系统

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51129868A (en) 1975-05-07 1976-11-11 Fujitsu Ltd A process for treatment of waste gas
JPS5278176A (en) 1975-12-25 1977-07-01 Chiyoda R & D Discharge reactor for gases
WO1980001363A1 (en) 1978-12-29 1980-07-10 Ncr Co Lpcvd systems having in situ plasma cleaning
JPS58101722A (ja) 1981-12-10 1983-06-17 Fujitsu Ltd 排気ガス処理装置
JPS5918619A (ja) 1982-07-22 1984-01-31 Seiko Epson Corp 軟磁性薄膜
JPS60114570A (ja) 1983-11-25 1985-06-21 Canon Inc プラズマｃｖｄ装置の排気系
DE3414121A1 (de) 1984-04-14 1985-10-24 Brown, Boveri & Cie Ag, 6800 Mannheim Verfahren und vorrichtung zur reinigung von abgasen
US4657738A (en) 1984-04-30 1987-04-14 Westinghouse Electric Corp. Stack gas emissions control system
JPS60234313A (ja) * 1984-05-07 1985-11-21 Hitachi Ltd プラズマ処理装置
US5137701A (en) 1984-09-17 1992-08-11 Mundt Randall S Apparatus and method for eliminating unwanted materials from a gas flow line
JPS6328869A (ja) * 1986-07-22 1988-02-06 Nec Corp Ｃｖｄ装置
US5000113A (en) 1986-12-19 1991-03-19 Applied Materials, Inc. Thermal CVD/PECVD reactor and use for thermal chemical vapor deposition of silicon dioxide and in-situ multi-step planarized process
JPH0757297B2 (ja) 1987-04-22 1995-06-21 日本真空技術株式会社 真空排気系用微粒子トラツプ
US4735633A (en) 1987-06-23 1988-04-05 Chiu Kin Chung R Method and system for vapor extraction from gases
JP2671009B2 (ja) 1988-05-13 1997-10-29 増田 佳子 超微粒子の回収方法及びその回収装置
JPH02125876A (ja) 1988-11-01 1990-05-14 Fujitsu Ltd Ｃｖｄ装置の排気機構
US5141714A (en) * 1989-08-01 1992-08-25 Kabushiki Kaisha Riken Exhaust gas cleaner
JPH04136175A (ja) * 1990-09-26 1992-05-11 Matsushita Electric Ind Co Ltd 薄膜形成装置
US5451378A (en) 1991-02-21 1995-09-19 The United States Of America As Represented By The Secretary Of The Navy Photon controlled decomposition of nonhydrolyzable ambients
US5211729A (en) 1991-08-30 1993-05-18 Sematech, Inc. Baffle/settling chamber for a chemical vapor deposition equipment
US5279669A (en) 1991-12-13 1994-01-18 International Business Machines Corporation Plasma reactor for processing substrates comprising means for inducing electron cyclotron resonance (ECR) and ion cyclotron resonance (ICR) conditions
JPH05202474A (ja) 1992-01-24 1993-08-10 Hitachi Electron Eng Co Ltd Ｃｖｄ装置の排気ガスの異物捕獲方法
US5323013A (en) 1992-03-31 1994-06-21 The United States Of America As Represented By The Secretary Of The Navy Method of rapid sample handling for laser processing
US5417826A (en) 1992-06-15 1995-05-23 Micron Technology, Inc. Removal of carbon-based polymer residues with ozone, useful in the cleaning of plasma reactors
DE4319118A1 (de) 1993-06-09 1994-12-15 Breitbarth Friedrich Wilhelm D Verfahren und Vorrichtung zur Entsorgung von Fluorkohlenstoffen und anderen fluorhaltigen Verbindungen
US5453125A (en) 1994-02-17 1995-09-26 Krogh; Ole D. ECR plasma source for gas abatement
JPH0910544A (ja) 1995-06-27 1997-01-14 Alpha Tec:Kk 除害装置及び成膜装置及びエッチング装置
US6187072B1 (en) 1995-09-25 2001-02-13 Applied Materials, Inc. Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissions
US6194628B1 (en) 1995-09-25 2001-02-27 Applied Materials, Inc. Method and apparatus for cleaning a vacuum line in a CVD system
DE19601436A1 (de) 1996-01-17 1997-07-24 Siegfried Dr Ing Straemke Verfahren und Vorrichtung zur Oberflächenbehandlung von Werkstücken
US5827370A (en) 1997-01-13 1998-10-27 Mks Instruments, Inc. Method and apparatus for reducing build-up of material on inner surface of tube downstream from a reaction furnace

Also Published As

Publication number Publication date
JP4146919B2 (ja) 2008-09-10
EP0839930B1 (de) 2003-04-09
KR100495783B1 (ko) 2005-09-08
KR19980033191A (ko) 1998-07-25
EP0839930A1 (de) 1998-05-06
US6193802B1 (en) 2001-02-27
TW346641B (en) 1998-12-01
JPH10144669A (ja) 1998-05-29
DE69720644T2 (de) 2003-10-30

Similar Documents

Publication Publication Date Title
DE69720644T2 (de) Reinigungsvorrichtung für Vakuumleitung in einer Substrat-Bearbeitungsvorrichtung
DE29715535U1 (de) Transportvorrichtung für Werkstücke in einer Vakuumanlage
DE69118104T2 (de) Rohrverbindung bei einer modularen Scheibenwischervorrichtung in Rohrbauweise
DE69502841T2 (de) Reinigungsvorrichtung
DE29617133U1 (de) Reinigungsgerät für Schnuller
DE59904255D1 (de) Sauggerät für Reinigungszwecke
DE69625454T2 (de) Reinigungsvorrichtung für Abwasserleitungen
ID22302A (id) Pembersih permukaan keras
DE69409746T2 (de) Schlauchanschlussstück für Vakuumeinrichtung
DE69505045T2 (de) Tragegriff für Staubsauger
DE69410701D1 (de) Gerät zur Säuberung einer Oberfläche
DE69813419T2 (de) Reiniger für Luntenvorrichtung
KR960019102U (ko) 웨이퍼 세척장치
DE59710279D1 (de) Rastvorrichtung für ein geradlinig verschiebbares bauteil
DE29601104U1 (de) Staubsauger für ein Saugreinigungsgerät
DE59702004D1 (de) Spüleinrichtung für Bestecke mit gewölbten Flächen
DE59811510D1 (de) Handgerät zum reinigen glatter flächen
KR960019106U (ko) 기판 세정장치
DE29714455U1 (de) Trocknereinrichtung für Bedruckstoffe in einer Verarbeitungsmaschine
DE9310686U1 (de) Reinigungseinrichtung insbesondere für Feuchtreinigungsgeräte
DE9417872U1 (de) Reinigungsgerät für gewölbte Flächen
DE9405599U1 (de) Saugvorrichtung für Reinigungszwecke
KR970064180U (ko) 불순물 제거기능을 갖는 웨이퍼 세정장치
KR960019103U (ko) 기판 세정 장치
DE9415085U1 (de) Aufnahmevorrichtung für Reinigungsartikel, insbesondere für gerollt ablegbare Artikel

Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8328 Change in the person/name/address of the agent

Representative=s name: BOECK, TAPPE, KIRSCHNER RECHTSANWAELTE PATENTANWAELTE

8328 Change in the person/name/address of the agent

Representative=s name: PUSCHMANN & BORCHERT, 82041 OBERHACHING

8339 Ceased/non-payment of the annual fee