DE69723458D1 - Auf einer substratsrückseite montierter isfet mit geschütztem gate - Google Patents

Auf einer substratsrückseite montierter isfet mit geschütztem gate

Info

Publication number
DE69723458D1
DE69723458D1 DE69723458T DE69723458T DE69723458D1 DE 69723458 D1 DE69723458 D1 DE 69723458D1 DE 69723458 T DE69723458 T DE 69723458T DE 69723458 T DE69723458 T DE 69723458T DE 69723458 D1 DE69723458 D1 DE 69723458D1
Authority
DE
Germany
Prior art keywords
isfet
substrate back
protected gate
protected
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE69723458T
Other languages
English (en)
Other versions
DE69723458T2 (de
Inventor
W Benton
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rosemount Inc
Original Assignee
Rosemount Analytical Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rosemount Analytical Inc filed Critical Rosemount Analytical Inc
Application granted granted Critical
Publication of DE69723458D1 publication Critical patent/DE69723458D1/de
Publication of DE69723458T2 publication Critical patent/DE69723458T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
    • G01N27/26—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating electrochemical variables; by using electrolysis or electrophoresis
    • G01N27/403—Cells and electrode assemblies
    • G01N27/414—Ion-sensitive or chemical field-effect transistors, i.e. ISFETS or CHEMFETS
DE69723458T 1996-11-15 1997-11-10 Auf einer substratsrückseite montierter isfet mit geschütztem gate Expired - Fee Related DE69723458T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US751085 1996-11-15
US08/751,085 US5833824A (en) 1996-11-15 1996-11-15 Dorsal substrate guarded ISFET sensor
PCT/US1997/020368 WO1998021572A1 (en) 1996-11-15 1997-11-10 Dorsal substrate guarded isfet sensor

Publications (2)

Publication Number Publication Date
DE69723458D1 true DE69723458D1 (de) 2003-08-14
DE69723458T2 DE69723458T2 (de) 2004-05-27

Family

ID=25020414

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69723458T Expired - Fee Related DE69723458T2 (de) 1996-11-15 1997-11-10 Auf einer substratsrückseite montierter isfet mit geschütztem gate

Country Status (5)

Country Link
US (1) US5833824A (de)
EP (1) EP0938670B1 (de)
AU (1) AU5173298A (de)
DE (1) DE69723458T2 (de)
WO (1) WO1998021572A1 (de)

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US6117292A (en) * 1998-05-06 2000-09-12 Honeywell International Inc Sensor packaging having an integral electrode plug member
JP2000356619A (ja) * 1999-06-14 2000-12-26 Sumitomo Metal Ind Ltd ｐＨセンサおよびそれを使用したｐＨ測定方法
TW468233B (en) 2000-09-16 2001-12-11 Univ Nat Yunlin Sci & Tech Apparatus and measurement method of hysteresis and time shift for ISFET containing amorphous silicon hydride sensing membrane
US6576102B1 (en) 2001-03-23 2003-06-10 Virotek, L.L.C. Electrochemical sensor and method thereof
US6572745B2 (en) * 2001-03-23 2003-06-03 Virotek, L.L.C. Electrochemical sensor and method thereof
TW544752B (en) 2002-05-20 2003-08-01 Univ Nat Yunlin Sci & Tech Method for producing SnO2 gate ion sensitive field effect transistor (ISFET), and method and device for measuring the temperature parameters, drift and hysteresis values thereof
DE10241779A1 (de) * 2002-09-06 2004-03-18 Mettler-Toledo Gmbh Elektrochemischer Sensor
US7323091B1 (en) * 2002-09-24 2008-01-29 Orion Research, Inc. Multimode electrochemical sensing array
DE10260961A1 (de) * 2002-12-20 2004-07-01 Endress + Hauser Conducta Gesellschaft für Mess- und Regeltechnik mbH + Co. KG Halbleitersensor mit frontseitiger Kontaktierung
US7063776B2 (en) * 2003-06-17 2006-06-20 Chun-Mu Huang Structure and manufacturing method of disposable electrochemical sensor strip
EP1706734A1 (de) * 2004-01-21 2006-10-04 Rosemount Analytical Inc. Ionensensitiver feldeffekttransistor (isfet)-sensor mit verbesserter steuerelektrodenkonfiguration
TWI241020B (en) * 2004-03-31 2005-10-01 Univ Nat Yunlin Sci & Tech Method of manufacturing TiO2 sensing film, ISFET having TiO2 sensing film, and methods and apparatus for measuring the temperature parameter, drift, and hysteresis thereof
TWI283512B (en) * 2004-07-08 2007-07-01 Via Tech Inc Transconductance filtering circuit
US20070000778A1 (en) * 2005-06-30 2007-01-04 Chung Yuan Christian University Multi-parameter sensor with readout circuit
JP2009505045A (ja) * 2005-08-08 2009-02-05 ミクロガン ゲーエムベーハー 半導体センサ
TWI295729B (en) * 2005-11-01 2008-04-11 Univ Nat Yunlin Sci & Tech Preparation of a ph sensor, the prepared ph sensor, systems comprising the same, and measurement using the systems
TWI375029B (en) * 2008-07-16 2012-10-21 Nat Univ Tsing Hua Field effect transistor based sensor
WO2010017192A1 (en) * 2008-08-05 2010-02-11 Ph Diagnostics Inc. Apparatus, method and system for determining a physiological condition within a mammal
DE102009001632A1 (de) 2009-03-18 2010-09-23 Endress + Hauser Conducta Gesellschaft für Mess- und Regeltechnik mbH + Co. KG Messanordnung mit einem ISFET-Halbleiter-Chip
DE102009026991A1 (de) 2009-06-17 2011-03-31 Endress + Hauser Conducta Gesellschaft für Mess- und Regeltechnik mbH + Co. KG Potentiometrischer Sensor mit einer Dichtung mit präzisen Dichtkanten
US8008691B2 (en) * 2009-07-21 2011-08-30 National Tsing Hua University Ion sensitive field effect transistor and production method thereof
DE102011005274B4 (de) * 2011-03-09 2020-09-10 Endress+Hauser SE+Co. KG Keramische Druckmesszelle
JP5798774B2 (ja) * 2011-03-31 2015-10-21 株式会社堀場製作所 電極体
US8536626B2 (en) * 2011-04-28 2013-09-17 Honeywell International Inc. Electronic pH sensor die packaging
JP5677892B2 (ja) * 2011-05-11 2015-02-25 株式会社堀場製作所 イオンセンサー装置及びイオンセンサー装置を備えたイオン濃度測定装置
DE102012213548A1 (de) * 2012-08-01 2014-02-06 Robert Bosch Gmbh Bondpad zum Thermokompressionsbonden, Verfahren zum Herstellen eines Bondpads und Bauelement
DE102012111813A1 (de) 2012-12-05 2014-06-05 Endress + Hauser Conducta Gesellschaft für Mess- und Regeltechnik mbH + Co. KG Sensor zur Erfassung einer Analytkonzentration
US9678173B2 (en) * 2013-05-03 2017-06-13 Infineon Technologies Ag Power module with integrated current sensor
US9927392B2 (en) 2014-08-14 2018-03-27 Nxp Usa, Inc. Sensing field effect transistor devices, systems in which they are incorporated, and methods of their fabrication
JP7173731B2 (ja) 2017-12-15 2022-11-16 株式会社 堀場アドバンスドテクノ 電磁気センサ

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US4020830A (en) * 1975-03-12 1977-05-03 The University Of Utah Selective chemical sensitive FET transducers
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NL8001420A (nl) * 1980-03-10 1981-10-01 Cordis Europ Voor een elektrochemische meting toepasbare elektrode omvattend samenstel, in het bijzonder een als een isfet uitgevoerd samenstel, en werkwijze ter vervaardiging van het samenstel.
US4397714A (en) * 1980-06-16 1983-08-09 University Of Utah System for measuring the concentration of chemical substances
JPS5715459A (en) * 1980-07-01 1982-01-26 Fujitsu Ltd Semiconductor integrated circuit
JPS5737876A (en) * 1980-08-20 1982-03-02 Hitachi Ltd Semiconductor integrated circuit apparatus
US4449011A (en) * 1982-01-08 1984-05-15 Critikon, Inc. Method and apparatus for encapsulation of chemically sensitive field effect device
US4514263A (en) * 1982-01-12 1985-04-30 University Of Utah Apparatus and method for measuring the concentration of components in fluids
US4411741A (en) * 1982-01-12 1983-10-25 University Of Utah Apparatus and method for measuring the concentration of components in fluids
NL8302963A (nl) * 1983-08-24 1985-03-18 Cordis Europ Inrichting voor het selectief meten van ionen in een vloeistof.
US4505799A (en) * 1983-12-08 1985-03-19 General Signal Corporation ISFET sensor and method of manufacture
GB8428138D0 (en) * 1984-11-07 1984-12-12 Sibbald A Semiconductor devices
EP0235470B1 (de) * 1986-01-24 1992-11-11 TERUMO KABUSHIKI KAISHA trading as TERUMO CORPORATION Ionenempfindlicher FET-Fühler
JPS63195557A (ja) * 1987-02-09 1988-08-12 Nippon Koden Corp イオンセンサ用電界効果トランジスタ
US4851104A (en) * 1987-02-27 1989-07-25 General Signal Corporation Instrument for potentiometric electrochemical measurements
US4921591A (en) * 1987-10-13 1990-05-01 Taiyo Yuden Co., Ltd. Ion sensors and their divided parts
JP2610294B2 (ja) * 1988-03-31 1997-05-14 株式会社東芝 化学センサ
US4874499A (en) * 1988-05-23 1989-10-17 Massachusetts Institute Of Technology Electrochemical microsensors and method of making such sensors
US5068205A (en) * 1989-05-26 1991-11-26 General Signal Corporation Header mounted chemically sensitive ISFET and method of manufacture
US5025298A (en) * 1989-08-22 1991-06-18 Motorola, Inc. Semiconductor structure with closely coupled substrate temperature sense element
US5250168A (en) * 1990-07-03 1993-10-05 Hitachi, Ltd. Integrated ion sensor
KR960010690B1 (ko) * 1990-12-06 1996-08-07 후지쓰 가부시끼가이샤 소형 유리전극
JP3009788B2 (ja) * 1991-11-15 2000-02-14 日本特殊陶業株式会社 集積回路用パッケージ
FR2683947B1 (fr) * 1991-11-18 1994-02-18 Sgs Thomson Microelectronics Sa Diode de protection monolithique basse tension a faible capacite.
JP3152727B2 (ja) * 1992-03-31 2001-04-03 株式会社東芝 ノズル型分析装置
US5414284A (en) * 1994-01-19 1995-05-09 Baxter; Ronald D. ESD Protection of ISFET sensors

Also Published As

Publication number Publication date
AU5173298A (en) 1998-06-03
EP0938670B1 (de) 2003-07-09
DE69723458T2 (de) 2004-05-27
WO1998021572A1 (en) 1998-05-22
US5833824A (en) 1998-11-10
EP0938670A1 (de) 1999-09-01

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee