DE69724187D1 - Suspension zum chemisch-mechanischen Polieren mit fluorierten Additiven und Verfahren zur Benutzung dieser Suspension - Google Patents
Suspension zum chemisch-mechanischen Polieren mit fluorierten Additiven und Verfahren zur Benutzung dieser SuspensionInfo
- Publication number
- DE69724187D1 DE69724187D1 DE69724187T DE69724187T DE69724187D1 DE 69724187 D1 DE69724187 D1 DE 69724187D1 DE 69724187 T DE69724187 T DE 69724187T DE 69724187 T DE69724187 T DE 69724187T DE 69724187 D1 DE69724187 D1 DE 69724187D1
- Authority
- DE
- Germany
- Prior art keywords
- suspension
- mechanical polishing
- chemical mechanical
- fluorinated additives
- polishing slurry
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Agricultural Chemicals And Associated Chemicals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US659419 | 1996-06-06 | ||
| US08/659,419 US5993686A (en) | 1996-06-06 | 1996-06-06 | Fluoride additive containing chemical mechanical polishing slurry and method for use of same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69724187D1 true DE69724187D1 (de) | 2003-09-25 |
| DE69724187T2 DE69724187T2 (de) | 2004-02-26 |
Family
ID=24645336
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69724187T Expired - Lifetime DE69724187T2 (de) | 1996-06-06 | 1997-06-04 | Suspension zum chemisch-mechanischen Polieren mit fluorierten Additiven und Verfahren zur Benutzung dieser Suspension |
Country Status (11)
| Country | Link |
|---|---|
| US (1) | US5993686A (de) |
| EP (1) | EP0811666B1 (de) |
| JP (1) | JP3592894B2 (de) |
| AT (1) | ATE247700T1 (de) |
| AU (1) | AU3138597A (de) |
| DE (1) | DE69724187T2 (de) |
| ID (1) | ID17160A (de) |
| IL (1) | IL120912A (de) |
| MY (1) | MY132376A (de) |
| TW (1) | TW375660B (de) |
| WO (1) | WO1997047030A1 (de) |
Families Citing this family (100)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6546939B1 (en) * | 1990-11-05 | 2003-04-15 | Ekc Technology, Inc. | Post clean treatment |
| US20040140288A1 (en) * | 1996-07-25 | 2004-07-22 | Bakul Patel | Wet etch of titanium-tungsten film |
| WO1998004646A1 (en) * | 1996-07-25 | 1998-02-05 | Ekc Technology, Inc. | Chemical mechanical polishing composition and process |
| US20020111024A1 (en) * | 1996-07-25 | 2002-08-15 | Small Robert J. | Chemical mechanical polishing compositions |
| US6039891A (en) | 1996-09-24 | 2000-03-21 | Cabot Corporation | Multi-oxidizer precursor for chemical mechanical polishing |
| US6592776B1 (en) | 1997-07-28 | 2003-07-15 | Cabot Microelectronics Corporation | Polishing composition for metal CMP |
| US6121143A (en) * | 1997-09-19 | 2000-09-19 | 3M Innovative Properties Company | Abrasive articles comprising a fluorochemical agent for wafer surface modification |
| DE59802570D1 (de) * | 1997-09-26 | 2002-01-31 | Infineon Technologies Ag | Poliermittel und die verwendung dieses poliermittels zum planarisieren eines halbleitersubstrats |
| US6190237B1 (en) * | 1997-11-06 | 2001-02-20 | International Business Machines Corporation | pH-buffered slurry and use thereof for polishing |
| US6362101B2 (en) * | 1997-11-24 | 2002-03-26 | United Microelectronics Corp. | Chemical mechanical polishing methods using low pH slurry mixtures |
| US6294105B1 (en) | 1997-12-23 | 2001-09-25 | International Business Machines Corporation | Chemical mechanical polishing slurry and method for polishing metal/oxide layers |
| JP3147072B2 (ja) * | 1998-02-26 | 2001-03-19 | 日本電気株式会社 | 半導体装置の製造方法 |
| US6432828B2 (en) | 1998-03-18 | 2002-08-13 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper substrates |
| US6435947B2 (en) | 1998-05-26 | 2002-08-20 | Cabot Microelectronics Corporation | CMP polishing pad including a solid catalyst |
| US6177026B1 (en) | 1998-05-26 | 2001-01-23 | Cabot Microelectronics Corporation | CMP slurry containing a solid catalyst |
| GB2384003B (en) * | 1998-06-15 | 2003-09-03 | Fujimi Inc | Polishing composition |
| JP3998813B2 (ja) * | 1998-06-15 | 2007-10-31 | 株式会社フジミインコーポレーテッド | 研磨用組成物 |
| US6217416B1 (en) * | 1998-06-26 | 2001-04-17 | Cabot Microelectronics Corporation | Chemical mechanical polishing slurry useful for copper/tantalum substrates |
| US6063306A (en) * | 1998-06-26 | 2000-05-16 | Cabot Corporation | Chemical mechanical polishing slurry useful for copper/tantalum substrate |
| US6358853B2 (en) * | 1998-09-10 | 2002-03-19 | Intel Corporation | Ceria based slurry for chemical-mechanical polishing |
| JP2002528903A (ja) * | 1998-10-23 | 2002-09-03 | アーチ・スペシャルティ・ケミカルズ・インコーポレイテッド | 活性剤溶液を含有し、化学機械的に磨くためのスラリーシステム |
| US6206756B1 (en) | 1998-11-10 | 2001-03-27 | Micron Technology, Inc. | Tungsten chemical-mechanical polishing process using a fixed abrasive polishing pad and a tungsten layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
| US6276996B1 (en) | 1998-11-10 | 2001-08-21 | Micron Technology, Inc. | Copper chemical-mechanical polishing process using a fixed abrasive polishing pad and a copper layer chemical-mechanical polishing solution specifically adapted for chemical-mechanical polishing with a fixed abrasive pad |
| SG73683A1 (en) * | 1998-11-24 | 2000-06-20 | Texas Instruments Inc | Stabilized slurry compositions |
| JP2000160139A (ja) * | 1998-12-01 | 2000-06-13 | Fujimi Inc | 研磨用組成物およびそれを用いた研磨方法 |
| US6395194B1 (en) * | 1998-12-18 | 2002-05-28 | Intersurface Dynamics Inc. | Chemical mechanical polishing compositions, and process for the CMP removal of iridium thin using same |
| JP3177973B2 (ja) * | 1999-01-28 | 2001-06-18 | 日本電気株式会社 | 半導体装置の製造方法 |
| US6251150B1 (en) * | 1999-05-27 | 2001-06-26 | Ekc Technology, Inc. | Slurry composition and method of chemical mechanical polishing using same |
| US6630433B2 (en) * | 1999-07-19 | 2003-10-07 | Honeywell International Inc. | Composition for chemical mechanical planarization of copper, tantalum and tantalum nitride |
| US6225223B1 (en) * | 1999-08-16 | 2001-05-01 | Taiwan Semiconductor Manufacturing Company | Method to eliminate dishing of copper interconnects |
| US6348076B1 (en) * | 1999-10-08 | 2002-02-19 | International Business Machines Corporation | Slurry for mechanical polishing (CMP) of metals and use thereof |
| US6297208B1 (en) * | 1999-10-11 | 2001-10-02 | Iron Out, Inc. | Rust stain removal formula |
| KR100343391B1 (ko) * | 1999-11-18 | 2002-08-01 | 삼성전자 주식회사 | 화학 및 기계적 연마용 비선택성 슬러리 및 그제조방법과, 이를 이용하여 웨이퍼상의 절연층 내에플러그를 형성하는 방법 |
| WO2001044402A1 (en) * | 1999-12-17 | 2001-06-21 | Cabot Microelectronics Corporation | Method of polishing or planarizing a substrate |
| JP4500429B2 (ja) * | 1999-12-24 | 2010-07-14 | 株式会社トクヤマ | バリア膜用研磨剤 |
| JP2004127327A (ja) * | 1999-12-27 | 2004-04-22 | Showa Denko Kk | 磁気ディスク基板研磨用組成物 |
| US6454820B2 (en) * | 2000-02-03 | 2002-09-24 | Kao Corporation | Polishing composition |
| US7675766B2 (en) * | 2000-02-11 | 2010-03-09 | Axon Technologies Corporation | Microelectric programmable device and methods of forming and programming the same |
| JP2003530713A (ja) * | 2000-04-11 | 2003-10-14 | キャボット マイクロエレクトロニクス コーポレイション | 酸化ケイ素の優先除去系 |
| JP3945964B2 (ja) | 2000-06-01 | 2007-07-18 | 株式会社ルネサステクノロジ | 研磨剤、研磨方法及び半導体装置の製造方法 |
| US6524168B2 (en) | 2000-06-15 | 2003-02-25 | Rodel Holdings, Inc | Composition and method for polishing semiconductors |
| US6653242B1 (en) * | 2000-06-30 | 2003-11-25 | Applied Materials, Inc. | Solution to metal re-deposition during substrate planarization |
| KR100674895B1 (ko) * | 2000-07-18 | 2007-01-26 | 삼성전자주식회사 | 산화막 ｃｍｐ용 슬러리 |
| US6461227B1 (en) | 2000-10-17 | 2002-10-08 | Cabot Microelectronics Corporation | Method of polishing a memory or rigid disk with an ammonia-and/or halide-containing composition |
| WO2002042018A1 (en) * | 2000-11-22 | 2002-05-30 | Ingersoll Cm Systems, Inc. | Apparatus and method for rolling workpieces |
| CN1255854C (zh) * | 2001-01-16 | 2006-05-10 | 卡伯特微电子公司 | 含有草酸铵的抛光系统及方法 |
| JP2002288821A (ja) * | 2001-03-27 | 2002-10-04 | Showa Denko Kk | テクスチャリング加工用組成物 |
| WO2002076902A1 (en) * | 2001-03-27 | 2002-10-03 | Showa Denko K.K. | Composition for texturing process |
| KR100557600B1 (ko) * | 2001-06-29 | 2006-03-10 | 주식회사 하이닉스반도체 | 나이트라이드 cmp용 슬러리 |
| TW591089B (en) * | 2001-08-09 | 2004-06-11 | Cheil Ind Inc | Slurry composition for use in chemical mechanical polishing of metal wiring |
| JP4954398B2 (ja) * | 2001-08-09 | 2012-06-13 | 株式会社フジミインコーポレーテッド | 研磨用組成物およびそれを用いた研磨方法 |
| US6953389B2 (en) * | 2001-08-09 | 2005-10-11 | Cheil Industries, Inc. | Metal CMP slurry compositions that favor mechanical removal of oxides with reduced susceptibility to micro-scratching |
| WO2003044123A1 (en) * | 2001-11-16 | 2003-05-30 | Ferro Corporation | Particles for use in cmp slurries and method for producing them |
| KR100415617B1 (ko) * | 2001-12-06 | 2004-01-24 | 엘지.필립스 엘시디 주식회사 | 에천트와 이를 이용한 금속배선 제조방법 및박막트랜지스터의 제조방법 |
| KR100460312B1 (ko) * | 2001-12-10 | 2004-12-04 | 제일모직주식회사 | 금속배선 연마용 슬러리 조성물 |
| KR100474540B1 (ko) * | 2002-06-24 | 2005-03-10 | 주식회사 하이닉스반도체 | 반도체소자의 금속배선 콘택플러그 형성방법 |
| US20030136759A1 (en) * | 2002-01-18 | 2003-07-24 | Cabot Microelectronics Corp. | Microlens array fabrication using CMP |
| US7132058B2 (en) | 2002-01-24 | 2006-11-07 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Tungsten polishing solution |
| US20030139047A1 (en) * | 2002-01-24 | 2003-07-24 | Thomas Terence M. | Metal polishing slurry having a static etch inhibitor and method of formulation |
| US7524346B2 (en) * | 2002-01-25 | 2009-04-28 | Dupont Air Products Nanomaterials Llc | Compositions of chemical mechanical planarization slurries contacting noble-metal-featured substrates |
| US6884729B2 (en) * | 2002-02-11 | 2005-04-26 | Cabot Microelectronics Corporation | Global planarization method |
| US6853474B2 (en) * | 2002-04-04 | 2005-02-08 | Cabot Microelectronics Corporation | Process for fabricating optical switches |
| DE10227867A1 (de) * | 2002-06-22 | 2004-01-08 | Merck Patent Gmbh | Zusammensetzung zum Entfernen von Sidewall-Residues |
| US20040007690A1 (en) * | 2002-07-12 | 2004-01-15 | Cabot Microelectronics Corp. | Methods for polishing fiber optic connectors |
| US6893476B2 (en) * | 2002-12-09 | 2005-05-17 | Dupont Air Products Nanomaterials Llc | Composition and associated methods for chemical mechanical planarization having high selectivity for metal removal |
| US20040144038A1 (en) * | 2002-12-09 | 2004-07-29 | Junaid Ahmed Siddiqui | Composition and associated method for oxide chemical mechanical planarization |
| US20040188379A1 (en) * | 2003-03-28 | 2004-09-30 | Cabot Microelectronics Corporation | Dielectric-in-dielectric damascene process for manufacturing planar waveguides |
| US20050022456A1 (en) * | 2003-07-30 | 2005-02-03 | Babu S. V. | Polishing slurry and method for chemical-mechanical polishing of copper |
| US7186653B2 (en) * | 2003-07-30 | 2007-03-06 | Climax Engineered Materials, Llc | Polishing slurries and methods for chemical mechanical polishing |
| WO2005019364A1 (en) * | 2003-08-14 | 2005-03-03 | Ekc Technology, Inc. | Periodic acid compositions for polishing ruthenium/high k substrates |
| US6929983B2 (en) | 2003-09-30 | 2005-08-16 | Cabot Microelectronics Corporation | Method of forming a current controlling device |
| JP2005138197A (ja) * | 2003-11-04 | 2005-06-02 | Fujimi Inc | 研磨用組成物及び研磨方法 |
| US7419911B2 (en) * | 2003-11-10 | 2008-09-02 | Ekc Technology, Inc. | Compositions and methods for rapidly removing overfilled substrates |
| US7076891B2 (en) * | 2003-11-12 | 2006-07-18 | Nike, Inc. | Flexible fluid-filled bladder for an article of footwear |
| JP4974447B2 (ja) * | 2003-11-26 | 2012-07-11 | 株式会社フジミインコーポレーテッド | 研磨用組成物及び研磨方法 |
| US20050108947A1 (en) * | 2003-11-26 | 2005-05-26 | Mueller Brian L. | Compositions and methods for chemical mechanical polishing silica and silicon nitride |
| US20050148289A1 (en) * | 2004-01-06 | 2005-07-07 | Cabot Microelectronics Corp. | Micromachining by chemical mechanical polishing |
| JP2005244123A (ja) * | 2004-02-27 | 2005-09-08 | Fujimi Inc | 研磨用組成物 |
| US7524347B2 (en) * | 2004-10-28 | 2009-04-28 | Cabot Microelectronics Corporation | CMP composition comprising surfactant |
| CN1854234B (zh) | 2005-04-21 | 2013-03-20 | 安集微电子（上海）有限公司 | 抛光浆料及其用途和使用方法 |
| US7576361B2 (en) * | 2005-08-03 | 2009-08-18 | Aptina Imaging Corporation | Backside silicon wafer design reducing image artifacts from infrared radiation |
| US8163049B2 (en) * | 2006-04-18 | 2012-04-24 | Dupont Air Products Nanomaterials Llc | Fluoride-modified silica sols for chemical mechanical planarization |
| US20080020680A1 (en) * | 2006-07-24 | 2008-01-24 | Cabot Microelectronics Corporation | Rate-enhanced CMP compositions for dielectric films |
| US7691287B2 (en) * | 2007-01-31 | 2010-04-06 | Dupont Air Products Nanomaterials Llc | Method for immobilizing ligands and organometallic compounds on silica surface, and their application in chemical mechanical planarization |
| US7678605B2 (en) * | 2007-08-30 | 2010-03-16 | Dupont Air Products Nanomaterials Llc | Method for chemical mechanical planarization of chalcogenide materials |
| CN101451049A (zh) * | 2007-11-30 | 2009-06-10 | 安集微电子（上海）有限公司 | 一种化学机械抛光液 |
| US8506831B2 (en) | 2008-12-23 | 2013-08-13 | Air Products And Chemicals, Inc. | Combination, method, and composition for chemical mechanical planarization of a tungsten-containing substrate |
| JP2011135089A (ja) * | 2011-02-07 | 2011-07-07 | Jsr Corp | 化学機械研磨用水系分散体 |
| JP5542750B2 (ja) * | 2011-07-04 | 2014-07-09 | Ｊｓｒ株式会社 | 化学機械研磨用水系分散体 |
| KR101257336B1 (ko) * | 2012-04-13 | 2013-04-23 | 유비머트리얼즈주식회사 | 연마용 슬러리 및 이를 이용한 기판 연마 방법 |
| US9039914B2 (en) | 2012-05-23 | 2015-05-26 | Cabot Microelectronics Corporation | Polishing composition for nickel-phosphorous-coated memory disks |
| SG10201503988YA (en) * | 2014-05-29 | 2015-12-30 | Applied Materials Inc | Reduced titanium undercut in etch process |
| WO2017155669A1 (en) | 2016-03-11 | 2017-09-14 | Fujifilm Planar Solutions, LLC | Advanced fluid processing methods and systems |
| US11781039B2 (en) * | 2016-12-26 | 2023-10-10 | Fujimi Incorporated | Polishing composition and polishing method |
| US10982114B2 (en) | 2017-10-25 | 2021-04-20 | Saint-Gobain Ceramics & Plastics, Inc. | Composition for conducting material removal operations and method for forming same |
| CN109728158B (zh) * | 2017-10-27 | 2023-07-07 | 华邦电子股份有限公司 | 电阻式存储器及其制造方法与化学机械研磨制程 |
| US10858544B2 (en) * | 2018-05-24 | 2020-12-08 | Taiwan Semiconductor Manufacturing Company Ltd. | Chemical mechanical polishing slurry and chemical mechanical polishing process using the same |
| JP7450334B2 (ja) * | 2018-12-27 | 2024-03-15 | 東京応化工業株式会社 | エッチング液、及び半導体素子の製造方法 |
| JP2019131814A (ja) * | 2019-03-08 | 2019-08-08 | 株式会社フジミインコーポレーテッド | 研磨用組成物の製造方法 |
| US11597854B2 (en) * | 2019-07-16 | 2023-03-07 | Cmc Materials, Inc. | Method to increase barrier film removal rate in bulk tungsten slurry |
Family Cites Families (38)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3385682A (en) * | 1965-04-29 | 1968-05-28 | Sprague Electric Co | Method and reagent for surface polishing |
| US3565707A (en) * | 1969-03-03 | 1971-02-23 | Fmc Corp | Metal dissolution |
| US3843430A (en) * | 1972-04-03 | 1974-10-22 | Macdermid Inc | Chromate-free bright dip for zinc and cadmium surfaces |
| US3887403A (en) * | 1972-07-05 | 1975-06-03 | Mc Donnell Douglas Corp | Process and solution for removing titanium and refractory metals and their alloys from tools |
| US4345969A (en) * | 1981-03-23 | 1982-08-24 | Motorola, Inc. | Metal etch solution and method |
| US4789648A (en) * | 1985-10-28 | 1988-12-06 | International Business Machines Corporation | Method for producing coplanar multi-level metal/insulator films on a substrate and for forming patterned conductive lines simultaneously with stud vias |
| US4944836A (en) * | 1985-10-28 | 1990-07-31 | International Business Machines Corporation | Chem-mech polishing method for producing coplanar metal/insulator films on a substrate |
| US4671851A (en) * | 1985-10-28 | 1987-06-09 | International Business Machines Corporation | Method for removing protuberances at the surface of a semiconductor wafer using a chem-mech polishing technique |
| US4956313A (en) * | 1987-08-17 | 1990-09-11 | International Business Machines Corporation | Via-filling and planarization technique |
| US4954459A (en) * | 1988-05-12 | 1990-09-04 | Advanced Micro Devices, Inc. | Method of planarization of topologies in integrated circuit structures |
| US4910155A (en) * | 1988-10-28 | 1990-03-20 | International Business Machines Corporation | Wafer flood polishing |
| US5137544A (en) * | 1990-04-10 | 1992-08-11 | Rockwell International Corporation | Stress-free chemo-mechanical polishing agent for II-VI compound semiconductor single crystals and method of polishing |
| US5157876A (en) * | 1990-04-10 | 1992-10-27 | Rockwell International Corporation | Stress-free chemo-mechanical polishing agent for II-VI compound semiconductor single crystals and method of polishing |
| US4992135A (en) * | 1990-07-24 | 1991-02-12 | Micron Technology, Inc. | Method of etching back of tungsten layers on semiconductor wafers, and solution therefore |
| US5173438A (en) * | 1991-02-13 | 1992-12-22 | Micron Technology, Inc. | Method of performing a field implant subsequent to field oxide fabrication by utilizing selective tungsten deposition to produce encroachment-free isolation |
| US5244534A (en) * | 1992-01-24 | 1993-09-14 | Micron Technology, Inc. | Two-step chemical mechanical polishing process for producing flush and protruding tungsten plugs |
| US5300813A (en) * | 1992-02-26 | 1994-04-05 | International Business Machines Corporation | Refractory metal capped low resistivity metal conductor lines and vias |
| US5314843A (en) * | 1992-03-27 | 1994-05-24 | Micron Technology, Inc. | Integrated circuit polishing method |
| US5209816A (en) * | 1992-06-04 | 1993-05-11 | Micron Technology, Inc. | Method of chemical mechanical polishing aluminum containing metal layers and slurry for chemical mechanical polishing |
| US5225034A (en) * | 1992-06-04 | 1993-07-06 | Micron Technology, Inc. | Method of chemical mechanical polishing predominantly copper containing metal layers in semiconductor processing |
| US5389194A (en) * | 1993-02-05 | 1995-02-14 | Lsi Logic Corporation | Methods of cleaning semiconductor substrates after polishing |
| US5391258A (en) * | 1993-05-26 | 1995-02-21 | Rodel, Inc. | Compositions and methods for polishing |
| US5407526A (en) * | 1993-06-30 | 1995-04-18 | Intel Corporation | Chemical mechanical polishing slurry delivery and mixing system |
| US5340370A (en) * | 1993-11-03 | 1994-08-23 | Intel Corporation | Slurries for chemical mechanical polishing |
| JP2600600B2 (ja) * | 1993-12-21 | 1997-04-16 | 日本電気株式会社 | 研磨剤とその製法及びそれを用いた半導体装置の製造方法 |
| US5439551A (en) * | 1994-03-02 | 1995-08-08 | Micron Technology, Inc. | Chemical-mechanical polishing techniques and methods of end point detection in chemical-mechanical polishing processes |
| US5527423A (en) * | 1994-10-06 | 1996-06-18 | Cabot Corporation | Chemical mechanical polishing slurry for metal layers |
| JPH08116016A (ja) * | 1994-10-15 | 1996-05-07 | Toshiba Corp | リードフレーム及び半導体装置 |
| US5478436A (en) * | 1994-12-27 | 1995-12-26 | Motorola, Inc. | Selective cleaning process for fabricating a semiconductor device |
| US5534462A (en) * | 1995-02-24 | 1996-07-09 | Motorola, Inc. | Method for forming a plug and semiconductor device having the same |
| US5494849A (en) * | 1995-03-23 | 1996-02-27 | Si Bond L.L.C. | Single-etch stop process for the manufacture of silicon-on-insulator substrates |
| US5614444A (en) * | 1995-06-06 | 1997-03-25 | Sematech, Inc. | Method of using additives with silica-based slurries to enhance selectivity in metal CMP |
| US5700383A (en) * | 1995-12-21 | 1997-12-23 | Intel Corporation | Slurries and methods for chemical mechanical polish of aluminum and titanium aluminide |
| US5645736A (en) * | 1995-12-29 | 1997-07-08 | Symbios Logic Inc. | Method for polishing a wafer |
| US5647952A (en) * | 1996-04-01 | 1997-07-15 | Industrial Technology Research Institute | Chemical/mechanical polish (CMP) endpoint method |
| US5783489A (en) * | 1996-09-24 | 1998-07-21 | Cabot Corporation | Multi-oxidizer slurry for chemical mechanical polishing |
| US5756398A (en) * | 1997-03-17 | 1998-05-26 | Rodel, Inc. | Composition and method for polishing a composite comprising titanium |
| US5770103A (en) * | 1997-07-08 | 1998-06-23 | Rodel, Inc. | Composition and method for polishing a composite comprising titanium |
-
1996
- 1996-06-06 US US08/659,419 patent/US5993686A/en not_active Expired - Fee Related
-
1997
- 1997-05-22 AU AU31385/97A patent/AU3138597A/en not_active Abandoned
- 1997-05-22 WO PCT/US1997/008695 patent/WO1997047030A1/en active Application Filing
- 1997-05-26 IL IL12091297A patent/IL120912A/en not_active IP Right Cessation
- 1997-05-29 TW TW086107337A patent/TW375660B/zh not_active IP Right Cessation
- 1997-06-04 DE DE69724187T patent/DE69724187T2/de not_active Expired - Lifetime
- 1997-06-04 MY MYPI97002487A patent/MY132376A/en unknown
- 1997-06-04 AT AT97303836T patent/ATE247700T1/de not_active IP Right Cessation
- 1997-06-04 EP EP97303836A patent/EP0811666B1/de not_active Expired - Lifetime
- 1997-06-05 JP JP14768897A patent/JP3592894B2/ja not_active Expired - Fee Related
- 1997-06-06 ID IDP971949A patent/ID17160A/id unknown
Also Published As
| Publication number | Publication date |
|---|---|
| IL120912A (en) | 2002-11-10 |
| AU3138597A (en) | 1998-01-05 |
| MY132376A (en) | 2007-10-31 |
| TW375660B (en) | 1999-12-01 |
| JPH1067986A (ja) | 1998-03-10 |
| EP0811666B1 (de) | 2003-08-20 |
| EP0811666A2 (de) | 1997-12-10 |
| ID17160A (id) | 1997-12-04 |
| EP0811666A3 (de) | 1998-10-21 |
| ATE247700T1 (de) | 2003-09-15 |
| JP3592894B2 (ja) | 2004-11-24 |
| WO1997047030A1 (en) | 1997-12-11 |
| DE69724187T2 (de) | 2004-02-26 |
| IL120912A0 (en) | 1997-09-30 |
| US5993686A (en) | 1999-11-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE69724187D1 (de) | Suspension zum chemisch-mechanischen Polieren mit fluorierten Additiven und Verfahren zur Benutzung dieser Suspension | |
| ATE258577T1 (de) | Zusammensetzungen und verfahren zum polieren und egalisieren von oberflächen | |
| ATE258576T1 (de) | Zusammensetzung und verfahren zum egalisieren von oberflächen | |
| DE60008376D1 (de) | Aufschlämmungszusammensetzung und verfahren zum chemisch-mechanischen polieren | |
| EP3210238B1 (de) | Kobaltpolierungsbeschleuniger | |
| DE69022805T2 (de) | Verfahren und Zusammensetzung zum Polieren. | |
| ATE307859T1 (de) | Verfahren zum polieren oder planarisieren eines substrats | |
| DE69318577D1 (de) | Kompositionen und verfahren zum polieren und egalisieren von oberflächen | |
| DE69417006T2 (de) | Herstellungsverfahren von gesinterten Schleifkörnern und Vorrichtung zu deren Sinterung | |
| BR8600769A (pt) | Composicao detergente,aquosa,abrasiva,homogenea e despejavel,apropriada para limpar superficies duras | |
| ATE149366T1 (de) | Immoblisierung metallischer verunreinigungen von einem flüssigen in ein festes medium | |
| ATE134553T1 (de) | Verfahren zum herstellen von mit extrem harten schleifkörnern belegten schleif- od. dgl. werkzeugen, insbes.zur zahnradfeinbearbeitung und damit erhältliche schleif- od. dgl. werkzeug. | |
| KR900014080A (ko) | 금속도장면의 연마방법 | |
| HUP0002981A2 (hu) | Nem folyékony súrolószer és tisztítási eljárás | |
| JP3599816B2 (ja) | 研磨材 | |
| RU2082738C1 (ru) | Полировальный состав для химико-механического полирования | |
| JPS57185375A (en) | Grinding liquid | |
| ES2004429A6 (es) | Metodo para la preparacion de un abrasivo y compuesto bucal combinado con el mismo | |
| Reinhold et al. | Characteristics in Use of Precious Corundum and Silicon Carbide Abrasive Tools Estimated by Width of Fluctuation of the Tool Life Behavior | |
| PL291363A1 (en) | Method of recovering diamond particles from used or damaged abrasive tools | |
| IL142115A0 (en) | Fluoride additive containing chemical mechanical polishing slurry and method for use of same | |
| TH32728A (th) | สเลอร์รี่ที่ใช้ขัดทางเคมีซึ่งรวมถึงสารเสริมฟลูออไรด์ |