DE69731945D1 - Halbleiter-verfahrensmethode zur herstellung eines kontaktsockels für den speicherknoten eines kondensators in integrierten schaltungen - Google Patents

Halbleiter-verfahrensmethode zur herstellung eines kontaktsockels für den speicherknoten eines kondensators in integrierten schaltungen

Info

Publication number
DE69731945D1
DE69731945D1 DE69731945T DE69731945T DE69731945D1 DE 69731945 D1 DE69731945 D1 DE 69731945D1 DE 69731945 T DE69731945 T DE 69731945T DE 69731945 T DE69731945 T DE 69731945T DE 69731945 D1 DE69731945 D1 DE 69731945D1
Authority
DE
Germany
Prior art keywords
contact opening
node location
contact
electrically conductive
etching
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69731945T
Other languages
English (en)
Other versions
DE69731945T2 (de
Inventor
H Dennison
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Micron Technology Inc
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of DE69731945D1 publication Critical patent/DE69731945D1/de
Application granted granted Critical
Publication of DE69731945T2 publication Critical patent/DE69731945T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
DE69731945T 1996-03-26 1997-03-21 Halbleiter-verfahrensmethode zur herstellung eines kontaktsockels für den speicherknoten eines kondensators in integrierten schaltungen Expired - Lifetime DE69731945T2 (de)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US622591 1984-06-20
US08/622,591 US6083831A (en) 1996-03-26 1996-03-26 Semiconductor processing method of forming a contact pedestal, of forming a storage node of a capacitor
PCT/US1997/004660 WO1997036327A1 (en) 1996-03-26 1997-03-21 A semiconductor processing method for forming a contact pedestal for a storage node of a capacitor in integrated circuitry

Publications (2)

Publication Number Publication Date
DE69731945D1 true DE69731945D1 (de) 2005-01-20
DE69731945T2 DE69731945T2 (de) 2005-12-22

Family

ID=24494762

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69731945T Expired - Lifetime DE69731945T2 (de) 1996-03-26 1997-03-21 Halbleiter-verfahrensmethode zur herstellung eines kontaktsockels für den speicherknoten eines kondensators in integrierten schaltungen

Country Status (8)

Country Link
US (5) US6083831A (de)
EP (1) EP0891634B1 (de)
JP (2) JP2000507741A (de)
KR (1) KR100424220B1 (de)
AT (1) ATE285121T1 (de)
AU (1) AU2342297A (de)
DE (1) DE69731945T2 (de)
WO (1) WO1997036327A1 (de)

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US6645806B2 (en) * 2001-08-07 2003-11-11 Micron Technology, Inc. Methods of forming DRAMS, methods of forming access transistors for DRAM devices, and methods of forming transistor source/drain regions
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US6696339B1 (en) * 2002-08-21 2004-02-24 Micron Technology, Inc. Dual-damascene bit line structures for microelectronic devices and methods of fabricating microelectronic devices
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KR100965030B1 (ko) * 2007-10-10 2010-06-21 주식회사 하이닉스반도체 반도체 소자 및 반도체 소자의 콘택 플러그 형성 방법
WO2013016321A1 (en) 2011-07-26 2013-01-31 Elitech Holding B.V. Minor groove binder phosphoramidites and methods of use
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CN106449591B (zh) * 2015-08-11 2019-02-19 旺宏电子股份有限公司 连接结构及其制作方法
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Also Published As

Publication number Publication date
JP2005101666A (ja) 2005-04-14
KR19990082204A (ko) 1999-11-25
US6083831A (en) 2000-07-04
EP0891634B1 (de) 2004-12-15
US6498375B2 (en) 2002-12-24
ATE285121T1 (de) 2005-01-15
KR100424220B1 (ko) 2004-11-10
DE69731945T2 (de) 2005-12-22
US20020020883A1 (en) 2002-02-21
WO1997036327A1 (en) 1997-10-02
JP4585309B2 (ja) 2010-11-24
US6331725B1 (en) 2001-12-18
EP0891634A1 (de) 1999-01-20
EP0891634A4 (de) 1999-12-01
US6300213B1 (en) 2001-10-09
JP2000507741A (ja) 2000-06-20
AU2342297A (en) 1997-10-17
US6312984B1 (en) 2001-11-06

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