DE69732618D1 - Eine asymmetrische Zelle für eine Halbleiterspeichermatrix und deren Herstellungsmethode - Google Patents

Eine asymmetrische Zelle für eine Halbleiterspeichermatrix und deren Herstellungsmethode

Info

Publication number
DE69732618D1
DE69732618D1 DE69732618T DE69732618T DE69732618D1 DE 69732618 D1 DE69732618 D1 DE 69732618D1 DE 69732618 T DE69732618 T DE 69732618T DE 69732618 T DE69732618 T DE 69732618T DE 69732618 D1 DE69732618 D1 DE 69732618D1
Authority
DE
Germany
Prior art keywords
manufacturing
semiconductor memory
memory matrix
asymmetric cell
asymmetric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69732618T
Other languages
English (en)
Other versions
DE69732618T2 (de
Inventor
Wenpin Lu
Tao-Cheng Lu
Mam-Tsung Wang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Macronix International Co Ltd
Original Assignee
Macronix International Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Macronix International Co Ltd filed Critical Macronix International Co Ltd
Application granted granted Critical
Publication of DE69732618D1 publication Critical patent/DE69732618D1/de
Publication of DE69732618T2 publication Critical patent/DE69732618T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B41/00Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/788Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881Programmable transistors with only two possible levels of programmation
    • H01L29/7883Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10BELECTRONIC MEMORY DEVICES
    • H10B69/00Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
DE69732618T 1997-01-15 1997-12-09 Eine asymmetrische Zelle für eine Halbleiterspeichermatrix und deren Herstellungsmethode Expired - Lifetime DE69732618T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US783995 1997-01-15
US08/783,995 US5963808A (en) 1997-01-15 1997-01-15 Method of forming an asymmetric bird's beak cell for a flash EEPROM

Publications (2)

Publication Number Publication Date
DE69732618D1 true DE69732618D1 (de) 2005-04-07
DE69732618T2 DE69732618T2 (de) 2005-12-29

Family

ID=25131045

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69732618T Expired - Lifetime DE69732618T2 (de) 1997-01-15 1997-12-09 Eine asymmetrische Zelle für eine Halbleiterspeichermatrix und deren Herstellungsmethode

Country Status (3)

Country Link
US (1) US5963808A (de)
EP (1) EP0854514B1 (de)
DE (1) DE69732618T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5837584A (en) * 1997-01-15 1998-11-17 Macronix International Co., Ltd. Virtual ground flash cell with asymmetrically placed source and drain and method of fabrication
KR100383703B1 (ko) * 1999-04-01 2003-05-14 아사히 가세이 마이크로시스템 가부시끼가이샤 반도체 장치의 제조 방법
US6261906B1 (en) * 1999-08-03 2001-07-17 Worldwide Semiconductor Manufacturing Corp. Method for forming a flash memory cell with improved drain erase performance
US6579751B2 (en) * 1999-09-01 2003-06-17 Micron Technology, Inc. Semiconductor processing methods of forming integrated circuitry
EP1170798B1 (de) 2000-07-04 2006-09-06 STMicroelectronics S.r.l. Architektur eines Festwertspeicherfelds
TW461093B (en) 2000-07-07 2001-10-21 United Microelectronics Corp Fabrication method for a high voltage electrical erasable programmable read only memory device
JP2003023114A (ja) * 2001-07-05 2003-01-24 Fujitsu Ltd 半導体集積回路装置およびその製造方法
JP2003086716A (ja) 2001-09-11 2003-03-20 Matsushita Electric Ind Co Ltd 不揮発性半導体記憶装置及びその製造方法
US7115516B2 (en) * 2001-10-09 2006-10-03 Applied Materials, Inc. Method of depositing a material layer
DE10351030B4 (de) * 2003-10-31 2008-05-29 Qimonda Ag Speicherzelle, DRAM und Verfahren zur Herstellung einer Transistorstruktur in einem Halbleitersubstrat
US7390718B2 (en) * 2004-02-20 2008-06-24 Tower Semiconductor Ltd. SONOS embedded memory with CVD dielectric
US7294882B2 (en) * 2004-09-28 2007-11-13 Sandisk Corporation Non-volatile memory with asymmetrical doping profile
US7959749B2 (en) * 2006-01-31 2011-06-14 Tk Holdings, Inc. Gas generating composition
US20070278557A1 (en) * 2006-05-31 2007-12-06 Texas Instruments Incorporated Novel method to form memory cells to improve programming performance of embedded memory technology
US7705387B2 (en) * 2006-09-28 2010-04-27 Sandisk Corporation Non-volatile memory with local boosting control implant
US7977186B2 (en) * 2006-09-28 2011-07-12 Sandisk Corporation Providing local boosting control implant for non-volatile memory

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4852062A (en) * 1987-09-28 1989-07-25 Motorola, Inc. EPROM device using asymmetrical transistor characteristics
US5060195A (en) * 1989-12-29 1991-10-22 Texas Instruments Incorporated Hot electron programmable, tunnel electron erasable contactless EEPROM
US5021848A (en) * 1990-03-13 1991-06-04 Chiu Te Long Electrically-erasable and electrically-programmable memory storage devices with self aligned tunnel dielectric area and the method of fabricating thereof
US5077230A (en) * 1990-08-03 1991-12-31 Intel Corporation Method for improving erase characteristics of buried bit line flash EPROM devices by use of a thin nitride layer formed during field oxide growth
JPH05304277A (ja) * 1992-04-28 1993-11-16 Rohm Co Ltd 半導体装置の製法
JP2877641B2 (ja) * 1992-12-25 1999-03-31 ローム株式会社 半導体記憶装置およびその駆動方式
US5306658A (en) * 1993-05-27 1994-04-26 Texas Instruments Incorporated Method of making virtual ground memory cell array
US5352619A (en) * 1993-07-22 1994-10-04 United Microelectronics Corporation Method for improving erase characteristics and coupling ratios of buried bit line flash EPROM devices
JP3093096B2 (ja) * 1993-08-27 2000-10-03 シャープ株式会社 不揮発性メモリの製造方法
US5384272A (en) * 1994-06-28 1995-01-24 Advanced Micro Devices, Inc. Method for manufacturing a non-volatile, virtual ground memory element
US5837584A (en) * 1997-01-15 1998-11-17 Macronix International Co., Ltd. Virtual ground flash cell with asymmetrically placed source and drain and method of fabrication

Also Published As

Publication number Publication date
DE69732618T2 (de) 2005-12-29
EP0854514B1 (de) 2005-03-02
US5963808A (en) 1999-10-05
EP0854514A1 (de) 1998-07-22

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