DE69734985D1 - Ram speicher und das in deren herstellung verwendete platindampfabscheidungsverfahren - Google Patents

Ram speicher und das in deren herstellung verwendete platindampfabscheidungsverfahren

Info

Publication number
DE69734985D1
DE69734985D1 DE69734985T DE69734985T DE69734985D1 DE 69734985 D1 DE69734985 D1 DE 69734985D1 DE 69734985 T DE69734985 T DE 69734985T DE 69734985 T DE69734985 T DE 69734985T DE 69734985 D1 DE69734985 D1 DE 69734985D1
Authority
DE
Germany
Prior art keywords
butyl
propyl
methyl
platinum
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69734985T
Other languages
English (en)
Inventor
Thomas H Baum
Peter S Kirlin
Sofia Pombrik
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Advanced Technology Materials Inc
Original Assignee
Advanced Technology Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Technology Materials Inc filed Critical Advanced Technology Materials Inc
Application granted granted Critical
Publication of DE69734985D1 publication Critical patent/DE69734985D1/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C49/00—Ketones; Ketenes; Dimeric ketenes; Ketonic chelates
    • C07C49/92—Ketonic chelates
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F17/00—Metallocenes
    • C07F17/02—Metallocenes of metals of Groups 8, 9 or 10 of the Periodic System
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
    • H01L28/40—Capacitors
    • H01L28/60—Electrodes
    • H01L28/65—Electrodes comprising a noble metal or a noble metal oxide, e.g. platinum (Pt), ruthenium (Ru), ruthenium dioxide (RuO2), iridium (Ir), iridium dioxide (IrO2)
DE69734985T 1996-06-28 1997-06-27 Ram speicher und das in deren herstellung verwendete platindampfabscheidungsverfahren Expired - Lifetime DE69734985D1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/673,372 US5783716A (en) 1996-06-28 1996-06-28 Platinum source compositions for chemical vapor deposition of platinum
PCT/US1997/012762 WO1998000432A1 (en) 1996-06-28 1997-06-27 Platinum source compositions for chemical vapor deposition of platinum

Publications (1)

Publication Number Publication Date
DE69734985D1 true DE69734985D1 (de) 2006-02-02

Family

ID=24702388

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69734985T Expired - Lifetime DE69734985D1 (de) 1996-06-28 1997-06-27 Ram speicher und das in deren herstellung verwendete platindampfabscheidungsverfahren

Country Status (6)

Country Link
US (2) US5783716A (de)
EP (1) EP0920435B1 (de)
JP (1) JP2001504159A (de)
AT (1) ATE314730T1 (de)
DE (1) DE69734985D1 (de)
WO (1) WO1998000432A1 (de)

Families Citing this family (54)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3769711B2 (ja) 1997-11-28 2006-04-26 ローム株式会社 キャパシタの製法
JP3321729B2 (ja) * 1998-04-03 2002-09-09 株式会社高純度化学研究所 トリメチル（エチルシクロペンタジエニル）白金とそ の製造方法及びそれを用いた白金含有薄膜の製造方法
US6284654B1 (en) * 1998-04-16 2001-09-04 Advanced Technology Materials, Inc. Chemical vapor deposition process for fabrication of hybrid electrodes
US6750110B1 (en) * 1998-07-23 2004-06-15 Micron Technology, Inc. Continuous good step coverage CVD platinum metal deposition
US6271131B1 (en) 1998-08-26 2001-08-07 Micron Technology, Inc. Methods for forming rhodium-containing layers such as platinum-rhodium barrier layers
US7098503B1 (en) * 1998-08-27 2006-08-29 Micron Technology, Inc. Circuitry and capacitors comprising roughened platinum layers
US6583022B1 (en) * 1998-08-27 2003-06-24 Micron Technology, Inc. Methods of forming roughened layers of platinum and methods of forming capacitors
US6261850B1 (en) * 1998-09-03 2001-07-17 Micron Technology, Inc. Direct writing of low carbon conductive material
US6323081B1 (en) * 1998-09-03 2001-11-27 Micron Technology, Inc. Diffusion barrier layers and methods of forming same
EP1130628A4 (de) * 1998-10-14 2007-07-04 Hitachi Ltd Halbleitervorrichtung und herstellungsverfahren
US6218293B1 (en) 1998-11-13 2001-04-17 Micron Technology, Inc. Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitride
US7012292B1 (en) 1998-11-25 2006-03-14 Advanced Technology Materials, Inc Oxidative top electrode deposition process, and microelectronic device structure
US6204178B1 (en) * 1998-12-29 2001-03-20 Micron Technology, Inc. Nucleation and deposition of PT films using ultraviolet irradiation
US6352944B1 (en) 1999-02-10 2002-03-05 Micron Technology, Inc. Method of depositing an aluminum nitride comprising layer over a semiconductor substrate
US6984591B1 (en) * 2000-04-20 2006-01-10 International Business Machines Corporation Precursor source mixtures
US6503314B1 (en) * 2000-08-28 2003-01-07 Sharp Laboratories Of America, Inc. MOCVD ferroelectric and dielectric thin films depositions using mixed solvents
US6660631B1 (en) * 2000-08-31 2003-12-09 Micron Technology, Inc. Devices containing platinum-iridium films and methods of preparing such films and devices
US7217615B1 (en) 2000-08-31 2007-05-15 Micron Technology, Inc. Capacitor fabrication methods including forming a conductive layer
JP3598068B2 (ja) 2001-02-06 2004-12-08 松下電器産業株式会社 半導体装置の製造方法
GB2372404B (en) 2001-02-16 2003-04-09 Ericsson Telefon Ab L M Telecommunications system
US20030036242A1 (en) 2001-08-16 2003-02-20 Haining Yang Methods of forming metal-comprising materials and capacitor electrodes; and capacitor constructions
US6576538B2 (en) 2001-08-30 2003-06-10 Micron Technology, Inc. Technique for high efficiency metalorganic chemical vapor deposition
US6573199B2 (en) 2001-08-30 2003-06-03 Micron Technology, Inc. Methods of treating dielectric materials with oxygen, and methods of forming capacitor constructions
US6918960B2 (en) 2001-11-28 2005-07-19 Micron Technology, Inc. CVD of PtRh with good adhesion and morphology
US7105065B2 (en) * 2002-04-25 2006-09-12 Micron Technology, Inc. Metal layer forming methods and capacitor electrode forming methods
US7160577B2 (en) 2002-05-02 2007-01-09 Micron Technology, Inc. Methods for atomic-layer deposition of aluminum oxides in integrated circuits
FR2839982B1 (fr) 2002-05-22 2005-04-15 Centre Nat Rech Scient Composition de precurseur pour le depot de cuivre sur un support
WO2003106011A2 (en) * 2002-06-12 2003-12-24 Praxair Technology, Inc. A method for producing organometallic compounds
JP2004067601A (ja) * 2002-08-07 2004-03-04 Tanaka Kikinzoku Kogyo Kk Ｃｖｄ原料用の有機化合物及び該有機化合物を用いた金属又は金属化合物薄膜の製造方法
US7084078B2 (en) 2002-08-29 2006-08-01 Micron Technology, Inc. Atomic layer deposited lanthanide doped TiOx dielectric films
ES2268635T3 (es) * 2003-03-03 2007-03-16 Dechema Gesellschaft Fur Chemische Technik Und Biotechnologie E.V. Procedimiento para recubrir un sustrato.
US20050081907A1 (en) * 2003-10-20 2005-04-21 Lewis Larry N. Electro-active device having metal-containing layer
JP2005158842A (ja) * 2003-11-21 2005-06-16 Matsushita Electric Ind Co Ltd 半導体装置及びその製造方法
US7166732B2 (en) * 2004-06-16 2007-01-23 Advanced Technology Materials, Inc. Copper (I) compounds useful as deposition precursors of copper thin films
US7588988B2 (en) 2004-08-31 2009-09-15 Micron Technology, Inc. Method of forming apparatus having oxide films formed using atomic layer deposition
US7662729B2 (en) 2005-04-28 2010-02-16 Micron Technology, Inc. Atomic layer deposition of a ruthenium layer to a lanthanide oxide dielectric layer
US7572695B2 (en) 2005-05-27 2009-08-11 Micron Technology, Inc. Hafnium titanium oxide films
US7927948B2 (en) 2005-07-20 2011-04-19 Micron Technology, Inc. Devices with nanocrystals and methods of formation
US7575978B2 (en) * 2005-08-04 2009-08-18 Micron Technology, Inc. Method for making conductive nanoparticle charge storage element
US7410910B2 (en) 2005-08-31 2008-08-12 Micron Technology, Inc. Lanthanum aluminum oxynitride dielectric films
FR2897070B1 (fr) * 2006-02-03 2008-12-19 Commissariat Energie Atomique Procede dli-mocvd pour la fabrication d'electrodes pour reacteurs electrochimiques, electrodes obtenues par ce procede et pile a combustible et accumulateur mettant en oeuvre de telles electrodes
DE102006050863A1 (de) * 2006-10-27 2008-04-30 Wacker Chemie Ag Platinkatalysator
WO2008069821A1 (en) * 2006-12-05 2008-06-12 Advanced Technology Materials, Inc. Metal aminotroponiminates, bis-oxazolinates and guanidinates
US7763511B2 (en) * 2006-12-29 2010-07-27 Intel Corporation Dielectric barrier for nanocrystals
US7750173B2 (en) * 2007-01-18 2010-07-06 Advanced Technology Materials, Inc. Tantalum amido-complexes with chelate ligands useful for CVD and ALD of TaN and Ta205 thin films
US8367506B2 (en) 2007-06-04 2013-02-05 Micron Technology, Inc. High-k dielectrics with gold nano-particles
US20090275164A1 (en) * 2008-05-02 2009-11-05 Advanced Technology Materials, Inc. Bicyclic guanidinates and bridging diamides as cvd/ald precursors
CN103221548B (zh) 2010-06-15 2017-04-12 代谢探索者公司 诱导型启动子在乙醇酸的产生中的用途
US8911827B2 (en) 2011-04-20 2014-12-16 Tanka Kikinzoku Kogyo K.K. Chemical vapor deposition method using an organoplatinum compound
JP5156120B1 (ja) 2011-10-14 2013-03-06 田中貴金属工業株式会社 有機白金化合物からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法
JP5952460B1 (ja) 2015-05-12 2016-07-13 田中貴金属工業株式会社 有機白金化合物からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法
JP5960321B1 (ja) 2015-05-12 2016-08-02 田中貴金属工業株式会社 有機白金化合物からなる化学蒸着用原料及び該化学蒸着用原料を用いた化学蒸着法
JP6407370B1 (ja) * 2017-07-25 2018-10-17 田中貴金属工業株式会社 有機白金化合物からなる気相蒸着用原料及び該気相蒸着用原料を用いた気相蒸着法
EP3956339A1 (de) * 2020-03-20 2022-02-23 UMICORE AG & Co. KG Trimethylplatin(iv)-iodid

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4510094A (en) * 1983-12-06 1985-04-09 Minnesota Mining And Manufacturing Company Platinum complex
GB8526613D0 (en) * 1985-10-29 1985-12-04 Shell Int Research Aldehydes
JPH0254704A (ja) * 1988-08-19 1990-02-23 Tanaka Kikinzoku Kogyo Kk 貴金属粒子の製造方法
US5130172A (en) * 1988-10-21 1992-07-14 The Regents Of The University Of California Low temperature organometallic deposition of metals
US4912072A (en) * 1988-10-21 1990-03-27 Gas Research Institute Method for selective internal platinization of porous aluminosilicates
CA1340871C (en) * 1988-12-28 2000-01-04 Robert W. Epperly Method for reducing emissions from or increasing the utilizable energy of fuel for powering internal combustion engines
US5104684A (en) * 1990-05-25 1992-04-14 Massachusetts Institute Of Technology Ion beam induced deposition of metals
US5116637A (en) * 1990-06-04 1992-05-26 Dow Corning Corporation Amine catalysts for the low temperature conversion of silica precursors to silica
US5840897A (en) * 1990-07-06 1998-11-24 Advanced Technology Materials, Inc. Metal complex source reagents for chemical vapor deposition
US5280012A (en) * 1990-07-06 1994-01-18 Advanced Technology Materials Inc. Method of forming a superconducting oxide layer by MOCVD
US5276226A (en) * 1992-10-05 1994-01-04 Exxon Research & Engineering Company Low temperature halogenation of alkanes
US5403620A (en) * 1992-10-13 1995-04-04 Regents Of The University Of California Catalysis in organometallic CVD of thin metal films
US5502227A (en) * 1993-07-27 1996-03-26 Cvd, Incorporated Liquid indium source
AU7614194A (en) * 1993-08-19 1995-03-14 Shell Internationale Research Maatschappij B.V. Hydroformylation process
JP4047382B2 (ja) * 1995-08-04 2008-02-13 マイクロコーティング テクノロジーズ 超臨界付近および超臨界の流体溶液の溶射を用いた化学蒸着および粉体形成
EP0846097B1 (de) * 1995-08-25 2000-11-02 E.I. Du Pont De Nemours And Company Hydroformylierungsverfahren.

Also Published As

Publication number Publication date
US6162712A (en) 2000-12-19
EP0920435B1 (de) 2005-12-28
ATE314730T1 (de) 2006-01-15
WO1998000432A1 (en) 1998-01-08
EP0920435A4 (de) 2001-07-25
EP0920435A1 (de) 1999-06-09
US5783716A (en) 1998-07-21
JP2001504159A (ja) 2001-03-27

Similar Documents

Publication Publication Date Title
DE69734985D1 (de) Ram speicher und das in deren herstellung verwendete platindampfabscheidungsverfahren
Pirrung et al. Proofing of photolithographic DNA synthesis with 3 ‘, 5 ‘-dimethoxybenzoinyloxycarbonyl-protected deoxynucleoside phosphoramidites
Sosnowski et al. Rapid determination of single base mismatch mutations in DNA hybrids by direct electric field control
Guadalupe et al. Novel chemical pathways and charge-transport dynamics of electrodes modified with electropolymerized layers of [Co (v-terpy) 2] 2+
DE59510492D1 (de) Wasserbasierende organopolysiloxanhaltige Zusammensetzungen, Verfahren zu deren Herstellung und deren Verwendung
ATE139580T1 (de) Gasversorgungsvorrichtung und ihre verwendung für eine filmabscheidungsanlage
DE59510270D1 (de) Organopolysiloxanhaltige Zusammensetzungen auf Wasserbasis, Verfahren zu deren Herstellung sowie deren Verwendung
AR245718A1 (es) Procedimiento para preparar un compuesto de imidazo (4,5-b)-piridina
ATE236170T1 (de) Verfahren zur herstellung von fluoralkyl-gruppen tragenden siliciumorganischen verbindungen und deren verwendung
FR2692168B1 (fr) Préparation et utilisation de nouveaux systèmes colloïdaux dispersibles à base de cyclodextrine, sous forme de nanosphères.
FI924569A (fi) Foerfarande foer enantioselektiv framstaellning av fenylisoserinderivat
ATE153022T1 (de) 3',5'-ditertbutyl-4'-hydroxyflavone, verfahren zu ihrer herstellung und pharmazeutische zusammensetzung mit antioxidations- und antivasokonstriktionsaktivität
Beckett et al. The Reactions of Nitrofurans with Bacteria--II. Reduction of a Series of Antibacterial Nitrofurans by Aerobactor aerogenes
Burns et al. Stereoelectronic requirements for a new class of asymmetric ketone reduction catalysts containing an N P O structural unit.
BR8306704A (pt) Processo de preparacao de aldeidos ou de cetonas por oxidacao catalitica em meio liquidos dos alcoois primarios ou secundarios correspondentes
JPS6428556A (en) Enzyme electrode
Bartak et al. Decomposition of nitroaromatic anion radicals. The ambient behavior of the thiocyanate substituent
ATE144510T1 (de) N-(isochinolein-5-yl)-sulfonyl azazykloalkane, verfahren zu deren herstellung und diese enthaltende pharmazeutische zusammenstellungen
ATE20466T1 (de) Triazolyl-ketonoxime und -dioxime, verfahren zu ihrer herstellung und ihre verwendung als pflanzenwachstumsregulatoren.
DE69610563T2 (de) Verfahren zur hydrierung von iminen
KR960702432A (ko) P-알킬- 및p-아릴설포닐벤조산 유도체의 제조방법(process to prepare p-alkyl-and p-arylsulphonylbenzoic acid derivatives)
Choudhry et al. Quantum yields for the photodecomposition of polychlorinated dibenzo-p-dioxins (PCDDs) in water-acetonitrile solution
JPS56115776A (en) Preparation of 2-bromo-trifluoromethylpyridine
ES8306368A1 (es) "procedimiento para la preparacion de derivados de 1,2,3-tiadiazol-5-il-urea".
TH9839EX (th) อนุพันธ์โดโลเบนโซควิโนลีน,การเตรียมสารเหล่านั้นและการใช้สารเหล่าเป็นยาต่อต้านอาการหัวใจเต้นไม่ปกติ

Legal Events

Date Code Title Description
8332 No legal effect for de