DE69735627D1 - Riesenmagnetoresistives ganzmetall-festkörperbauelement - Google Patents
Riesenmagnetoresistives ganzmetall-festkörperbauelementInfo
- Publication number
- DE69735627D1 DE69735627D1 DE69735627T DE69735627T DE69735627D1 DE 69735627 D1 DE69735627 D1 DE 69735627D1 DE 69735627 T DE69735627 T DE 69735627T DE 69735627 T DE69735627 T DE 69735627T DE 69735627 D1 DE69735627 D1 DE 69735627D1
- Authority
- DE
- Germany
- Prior art keywords
- magnetoresistically
- giant
- solid body
- body element
- metal solid
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/093—Magnetoresistive devices using multilayer structures, e.g. giant magnetoresistance sensors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
- H01F10/3281—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn only by use of asymmetry of the magnetic film pair itself, i.e. so-called pseudospin valve [PSV] structure, e.g. NiFe/Cu/Co
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/02—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components
- H03K19/16—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using saturable magnetic devices
- H03K19/166—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits using specified components using saturable magnetic devices using transfluxors
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US1670496P | 1996-05-02 | 1996-05-02 | |
US16704P | 1996-05-02 | ||
US08/846,410 US5929636A (en) | 1996-05-02 | 1997-04-30 | All-metal giant magnetoresistive solid-state component |
US846410 | 1997-04-30 | ||
PCT/US1997/007425 WO1997041601A1 (en) | 1996-05-02 | 1997-05-02 | All-metal, giant magnetoresistive, solid-state component |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69735627D1 true DE69735627D1 (de) | 2006-05-18 |
DE69735627T2 DE69735627T2 (de) | 2006-08-24 |
Family
ID=26688967
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69735627T Expired - Lifetime DE69735627T2 (de) | 1996-05-02 | 1997-05-02 | Riesenmagnetoresistives ganzmetall-festkörperbauelement |
Country Status (8)
Country | Link |
---|---|
US (2) | US5929636A (de) |
EP (1) | EP0896734B1 (de) |
JP (1) | JP2002502549A (de) |
KR (1) | KR100467117B1 (de) |
AU (1) | AU3117097A (de) |
CA (1) | CA2252926C (de) |
DE (1) | DE69735627T2 (de) |
WO (1) | WO1997041601A1 (de) |
Families Citing this family (56)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6741494B2 (en) * | 1995-04-21 | 2004-05-25 | Mark B. Johnson | Magnetoelectronic memory element with inductively coupled write wires |
JPH11316919A (ja) | 1998-04-30 | 1999-11-16 | Hitachi Ltd | スピントンネル磁気抵抗効果型磁気ヘッド |
EP0971424A3 (de) * | 1998-07-10 | 2004-08-25 | Interuniversitair Microelektronica Centrum Vzw | Spin-Valve Struktur und Herstellungsverfahren |
US6194774B1 (en) * | 1999-03-10 | 2001-02-27 | Samsung Electronics Co., Ltd. | Inductor including bonding wires |
US6240622B1 (en) * | 1999-07-09 | 2001-06-05 | Micron Technology, Inc. | Integrated circuit inductors |
US6507187B1 (en) * | 1999-08-24 | 2003-01-14 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | Ultra-sensitive magnetoresistive displacement sensing device |
US6609174B1 (en) * | 1999-10-19 | 2003-08-19 | Motorola, Inc. | Embedded MRAMs including dual read ports |
DE10032272C2 (de) * | 2000-07-03 | 2002-08-29 | Infineon Technologies Ag | Strom-Treiberanordnung für MRAM |
US6538437B2 (en) * | 2000-07-11 | 2003-03-25 | Integrated Magnetoelectronics Corporation | Low power magnetic anomaly sensor |
US6483740B2 (en) * | 2000-07-11 | 2002-11-19 | Integrated Magnetoelectronics Corporation | All metal giant magnetoresistive memory |
US7248713B2 (en) | 2000-09-11 | 2007-07-24 | Micro Bar Technology, Inc. | Integrated automatic telephone switch |
DE10053206C1 (de) * | 2000-10-26 | 2002-01-17 | Siemens Ag | Logikschaltungsanordnung |
WO2002035611A2 (en) * | 2000-10-26 | 2002-05-02 | University Of Iowa Research Foundation | Unipolar spin diode and transistor and the applications of the same |
US6738284B2 (en) | 2001-03-23 | 2004-05-18 | Integrated Magnetoelectronics Corporation | Transpinnor-based sample-and-hold circuit and applications |
EP1370884A4 (de) * | 2001-03-23 | 2004-08-25 | Integrated Magnetoelectronics | Abtast-halte-schaltung auf transpinnor-basis und anwendungen |
DE10118650A1 (de) * | 2001-04-14 | 2002-10-17 | Philips Corp Intellectual Pty | Winkelsensor sowie Verfahren zum Erhöhen der Anisotropiefeldstärke einer Sensoreinheit eines Winkelsensors |
JP3603872B2 (ja) * | 2001-05-16 | 2004-12-22 | 松下電器産業株式会社 | 磁気センサとこれを用いた紙幣識別装置 |
US6688169B2 (en) | 2001-06-15 | 2004-02-10 | Textron Systems Corporation | Systems and methods for sensing an acoustic signal using microelectromechanical systems technology |
US6711437B2 (en) | 2001-07-30 | 2004-03-23 | Medtronic, Inc. | Pacing channel isolation in multi-site cardiac pacing systems |
US6700371B2 (en) * | 2001-09-05 | 2004-03-02 | Honeywell International Inc. | Three dimensional conductive strap for a magnetorestrictive sensor |
US6771472B1 (en) | 2001-12-07 | 2004-08-03 | Seagate Technology Llc | Structure to achieve thermally stable high sensitivity and linear range in bridge GMR sensor using SAF magnetic alignments |
US7046117B2 (en) * | 2002-01-15 | 2006-05-16 | Honeywell International Inc. | Integrated magnetic field strap for signal isolator |
US6859063B2 (en) * | 2002-04-11 | 2005-02-22 | Integrated Magnetoelectronics Corporation | Transpinnor-based transmission line transceivers and applications |
AU2003225048A1 (en) | 2002-04-19 | 2003-11-03 | Integrated Magnetoelectronics Corporation | Interfaces between semiconductor circuitry and transpinnor-based circuitry |
US7369671B2 (en) | 2002-09-16 | 2008-05-06 | Starkey, Laboratories, Inc. | Switching structures for hearing aid |
US8284970B2 (en) | 2002-09-16 | 2012-10-09 | Starkey Laboratories Inc. | Switching structures for hearing aid |
US6992919B2 (en) * | 2002-12-20 | 2006-01-31 | Integrated Magnetoelectronics Corporation | All-metal three-dimensional circuits and memories |
US7259545B2 (en) * | 2003-02-11 | 2007-08-21 | Allegro Microsystems, Inc. | Integrated sensor |
US7005852B2 (en) | 2003-04-04 | 2006-02-28 | Integrated Magnetoelectronics Corporation | Displays with all-metal electronics |
US7027319B2 (en) * | 2003-06-19 | 2006-04-11 | Hewlett-Packard Development Company, L.P. | Retrieving data stored in a magnetic integrated memory |
US7244997B2 (en) * | 2003-07-08 | 2007-07-17 | President And Fellows Of Harvard College | Magneto-luminescent transducer |
US20050083743A1 (en) * | 2003-09-09 | 2005-04-21 | Integrated Magnetoelectronics Corporation A California Corporation | Nonvolatile sequential machines |
US7177107B2 (en) * | 2004-02-11 | 2007-02-13 | Hitachi Global Storage Technologies Netherlands B.V. | Preamplifier circuit with signal interference cancellation suitable for use in magnetic storage devices |
EP1574850A1 (de) | 2004-03-08 | 2005-09-14 | Siemens Aktiengesellschaft | Vorrichtung zur zerstörungsfreien Erfassung von tiefen Defekten in elektrisch leitenden Materialien |
US20050269612A1 (en) * | 2004-05-11 | 2005-12-08 | Integrated Magnetoelectronics | Solid-state component based on current-induced magnetization reversal |
JP4692805B2 (ja) * | 2004-06-30 | 2011-06-01 | Tdk株式会社 | 磁気検出素子およびその形成方法 |
US7777607B2 (en) * | 2004-10-12 | 2010-08-17 | Allegro Microsystems, Inc. | Resistor having a predetermined temperature coefficient |
FR2876800B1 (fr) * | 2004-10-18 | 2007-03-02 | Commissariat Energie Atomique | Procede et dispositif de mesure de champ magnetique a l'aide d'un capteur magnetoresitif |
US7220968B2 (en) * | 2005-01-19 | 2007-05-22 | Integrated Magnetoelectronics Corporation | Radiation detector having all-metal circuitry operation of which is based on electron spin |
US7839605B2 (en) * | 2005-11-13 | 2010-11-23 | Hitachi Global Storage Technologies Netherlands B.V. | Electrical signal-processing device integrating a flux sensor with a flux generator in a magnetic circuit |
US7768083B2 (en) | 2006-01-20 | 2010-08-03 | Allegro Microsystems, Inc. | Arrangements for an integrated sensor |
US7911830B2 (en) * | 2007-05-17 | 2011-03-22 | Integrated Magnetoelectronics | Scalable nonvolatile memory |
US7795862B2 (en) | 2007-10-22 | 2010-09-14 | Allegro Microsystems, Inc. | Matching of GMR sensors in a bridge |
US7816905B2 (en) * | 2008-06-02 | 2010-10-19 | Allegro Microsystems, Inc. | Arrangements for a current sensing circuit and integrated current sensor |
FR2942924B1 (fr) * | 2009-03-06 | 2011-06-24 | Thales Sa | Transposeur de frequences hyperfrequences a dimensions reduites |
US8619467B2 (en) * | 2010-02-22 | 2013-12-31 | Integrated Magnetoelectronics | High GMR structure with low drive fields |
US9322889B2 (en) * | 2011-12-30 | 2016-04-26 | Nve Corporation | Low hysteresis high sensitivity magnetic field sensor |
DK2663095T3 (da) | 2012-05-07 | 2016-02-01 | Starkey Lab Inc | Høreapparat med fordelt bearbejdning i øreprop |
US20160084800A1 (en) | 2013-04-19 | 2016-03-24 | Jevne Branden Micheau-Cunningham | Eddy current inspection probe based on magnetoresistive sensors |
CN103384141B (zh) * | 2013-07-24 | 2015-05-06 | 江苏多维科技有限公司 | 一种磁阻混频器 |
US9632150B2 (en) * | 2015-04-27 | 2017-04-25 | Everspin Technologies, Inc. | Magnetic field sensor with increased field range |
US9741923B2 (en) | 2015-09-25 | 2017-08-22 | Integrated Magnetoelectronics Corporation | SpinRAM |
US10762940B2 (en) * | 2016-12-09 | 2020-09-01 | Integrated Magnetoelectronics Corporation | Narrow etched gaps or features in multi-period thin-film structures |
US10935612B2 (en) | 2018-08-20 | 2021-03-02 | Allegro Microsystems, Llc | Current sensor having multiple sensitivity ranges |
US11187764B2 (en) | 2020-03-20 | 2021-11-30 | Allegro Microsystems, Llc | Layout of magnetoresistance element |
US11567108B2 (en) | 2021-03-31 | 2023-01-31 | Allegro Microsystems, Llc | Multi-gain channels for multi-range sensor |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3972786A (en) * | 1974-06-28 | 1976-08-03 | Ampex Corporation | Mechanically enhanced magnetic memory |
US4751677A (en) * | 1986-09-16 | 1988-06-14 | Honeywell Inc. | Differential arrangement magnetic memory cell |
JPH03269383A (ja) * | 1990-03-20 | 1991-11-29 | Nec Corp | 磁気センサ及びその信号処理方式 |
US5173873A (en) * | 1990-06-28 | 1992-12-22 | The United States Of America As Represented By The Administrator Of The National Aeronautics And Space Administration | High speed magneto-resistive random access memory |
DE4319146C2 (de) * | 1993-06-09 | 1999-02-04 | Inst Mikrostrukturtechnologie | Magnetfeldsensor, aufgebaut aus einer Ummagnetisierungsleitung und einem oder mehreren magnetoresistiven Widerständen |
US5422621A (en) * | 1993-10-29 | 1995-06-06 | International Business Machines Corporation | Oriented granular giant magnetoresistance sensor |
FR2712420B1 (fr) * | 1993-11-08 | 1995-12-15 | Commissariat Energie Atomique | Tête magnétique de lecture à élément magnétorésistant multicouche et à concentrateur et son procédé de réalisation. |
JPH07153034A (ja) * | 1993-11-26 | 1995-06-16 | Matsushita Electric Ind Co Ltd | 磁気抵抗効果素子及びその製造方法 |
US5650889A (en) * | 1994-02-07 | 1997-07-22 | Hitachi, Ltd. | Magnetic recording medium containing heavy rare gas atoms, and a magnetic transducing system using the medium |
US5587943A (en) * | 1995-02-13 | 1996-12-24 | Integrated Microtransducer Electronics Corporation | Nonvolatile magnetoresistive memory with fully closed flux operation |
US5652445A (en) * | 1995-04-21 | 1997-07-29 | Johnson; Mark B. | Hybrid hall effect device and method of operation |
US5654566A (en) * | 1995-04-21 | 1997-08-05 | Johnson; Mark B. | Magnetic spin injected field effect transistor and method of operation |
US5585986A (en) * | 1995-05-15 | 1996-12-17 | International Business Machines Corporation | Digital magnetoresistive sensor based on the giant magnetoresistance effect |
US5650958A (en) * | 1996-03-18 | 1997-07-22 | International Business Machines Corporation | Magnetic tunnel junctions with controlled magnetic response |
-
1997
- 1997-04-30 US US08/846,410 patent/US5929636A/en not_active Expired - Lifetime
- 1997-05-02 KR KR10-1998-0708923A patent/KR100467117B1/ko not_active IP Right Cessation
- 1997-05-02 CA CA002252926A patent/CA2252926C/en not_active Expired - Fee Related
- 1997-05-02 WO PCT/US1997/007425 patent/WO1997041601A1/en active IP Right Grant
- 1997-05-02 EP EP97926397A patent/EP0896734B1/de not_active Expired - Lifetime
- 1997-05-02 DE DE69735627T patent/DE69735627T2/de not_active Expired - Lifetime
- 1997-05-02 JP JP53925797A patent/JP2002502549A/ja active Pending
- 1997-05-02 AU AU31170/97A patent/AU3117097A/en not_active Abandoned
-
1998
- 1998-12-08 US US09/208,628 patent/US6031273A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
EP0896734A1 (de) | 1999-02-17 |
CA2252926C (en) | 2002-08-06 |
EP0896734A4 (de) | 1999-11-24 |
JP2002502549A (ja) | 2002-01-22 |
KR100467117B1 (ko) | 2005-06-23 |
CA2252926A1 (en) | 1997-11-06 |
KR20000065205A (ko) | 2000-11-06 |
US5929636A (en) | 1999-07-27 |
WO1997041601A1 (en) | 1997-11-06 |
DE69735627T2 (de) | 2006-08-24 |
US6031273A (en) | 2000-02-29 |
EP0896734B1 (de) | 2006-04-05 |
AU3117097A (en) | 1997-11-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition |