DE69737742D1 - Herstellungsmethode einer hybriden integrierten schaltung - Google Patents
Herstellungsmethode einer hybriden integrierten schaltungInfo
- Publication number
- DE69737742D1 DE69737742D1 DE69737742T DE69737742T DE69737742D1 DE 69737742 D1 DE69737742 D1 DE 69737742D1 DE 69737742 T DE69737742 T DE 69737742T DE 69737742 T DE69737742 T DE 69737742T DE 69737742 D1 DE69737742 D1 DE 69737742D1
- Authority
- DE
- Germany
- Prior art keywords
- manufacturing
- integrated circuit
- hybrid integrated
- hybrid
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/8319—Arrangement of the layer connectors prior to mounting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01013—Aluminum [Al]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01015—Phosphorus [P]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/0665—Epoxy resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/06—Polymers
- H01L2924/078—Adhesive characteristics other than chemical
- H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/13—Discrete devices, e.g. 3 terminal devices
- H01L2924/1304—Transistor
- H01L2924/1305—Bipolar Junction Transistor [BJT]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19043—Component type being a resistor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30105—Capacitance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP96200674 | 1996-03-12 | ||
EP96200674 | 1996-03-12 | ||
PCT/IB1997/000091 WO1997034317A1 (en) | 1996-03-12 | 1997-02-07 | Method of manufacturing a hybrid integrated circuit |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69737742D1 true DE69737742D1 (de) | 2007-07-05 |
DE69737742T2 DE69737742T2 (de) | 2008-01-31 |
Family
ID=8223774
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69737742T Expired - Lifetime DE69737742T2 (de) | 1996-03-12 | 1997-02-07 | Herstellungsmethode einer hybriden integrierten schaltung |
Country Status (6)
Country | Link |
---|---|
US (1) | US5736452A (de) |
EP (1) | EP0826234B1 (de) |
JP (1) | JPH11505671A (de) |
KR (1) | KR100632136B1 (de) |
DE (1) | DE69737742T2 (de) |
WO (1) | WO1997034317A1 (de) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW492103B (en) | 2000-06-02 | 2002-06-21 | Koninkl Philips Electronics Nv | Electronic device, and method of patterning a first layer |
SE0100875D0 (sv) * | 2001-03-14 | 2001-03-14 | Biacore Ab | Method of preparing supported lipid film membranes and use thereof |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5329551B2 (de) * | 1974-08-19 | 1978-08-22 | ||
JPH0691227B2 (ja) * | 1984-02-09 | 1994-11-14 | 松下電子工業株式会社 | 半導体装置の製造方法 |
JPH061778B2 (ja) * | 1985-11-01 | 1994-01-05 | 日本電気株式会社 | 半導体装置およびその製造方法 |
US4870475A (en) * | 1985-11-01 | 1989-09-26 | Nec Corporation | Semiconductor device and method of manufacturing the same |
US4996411A (en) * | 1986-07-24 | 1991-02-26 | Schlumberger Industries | Method of manufacturing a card having electronic memory and a card obtained by performing said method |
JPS63308386A (ja) * | 1987-01-30 | 1988-12-15 | Sony Corp | 半導体装置とその製造方法 |
JP3092761B2 (ja) * | 1991-12-02 | 2000-09-25 | キヤノン株式会社 | 画像表示装置及びその製造方法 |
JP3014012B2 (ja) * | 1992-03-19 | 2000-02-28 | 日本電気株式会社 | 半導体装置の製造方法 |
JP3036233B2 (ja) * | 1992-06-22 | 2000-04-24 | 松下電器産業株式会社 | 半導体装置およびその製造方法 |
JP3340177B2 (ja) * | 1993-03-12 | 2002-11-05 | 株式会社東芝 | 電界効果型トランジスタ |
JP2526786B2 (ja) * | 1993-05-22 | 1996-08-21 | 日本電気株式会社 | 半導体装置及びその製造方法 |
JP3278296B2 (ja) * | 1994-07-13 | 2002-04-30 | 三菱電機株式会社 | 液晶表示アレイの製造方法 |
JP2571546B2 (ja) * | 1994-09-14 | 1997-01-16 | 松下電器産業株式会社 | 液晶画像表示装置の製造方法 |
KR0150998B1 (ko) * | 1994-10-27 | 1998-12-01 | 김광호 | 이중 스토퍼를 이용한 소이 웨이퍼 제조방법 |
JPH09509792A (ja) * | 1994-12-23 | 1997-09-30 | フィリップス エレクトロニクス ネムローゼ フェンノートシャップ | 支持ウェーハ上に接着した半導体物質の層中に半導体素子が形成した半導体装置の製造方法 |
-
1997
- 1997-02-07 EP EP97901215A patent/EP0826234B1/de not_active Expired - Lifetime
- 1997-02-07 WO PCT/IB1997/000091 patent/WO1997034317A1/en active IP Right Grant
- 1997-02-07 JP JP9532386A patent/JPH11505671A/ja active Pending
- 1997-02-07 KR KR1019970708083A patent/KR100632136B1/ko not_active IP Right Cessation
- 1997-02-07 DE DE69737742T patent/DE69737742T2/de not_active Expired - Lifetime
- 1997-03-12 US US08/815,245 patent/US5736452A/en not_active Expired - Lifetime
Also Published As
Publication number | Publication date |
---|---|
US5736452A (en) | 1998-04-07 |
KR19990014741A (ko) | 1999-02-25 |
EP0826234B1 (de) | 2007-05-23 |
WO1997034317A1 (en) | 1997-09-18 |
JPH11505671A (ja) | 1999-05-21 |
KR100632136B1 (ko) | 2006-11-30 |
DE69737742T2 (de) | 2008-01-31 |
EP0826234A1 (de) | 1998-03-04 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8327 | Change in the person/name/address of the patent owner |
Owner name: NXP B.V., EINDHOVEN, NL |
|
8328 | Change in the person/name/address of the agent |
Representative=s name: EISENFUEHR, SPEISER & PARTNER, 10178 BERLIN |
|
R082 | Change of representative |
Ref document number: 826234 Country of ref document: EP Representative=s name: BOSCH JEHLE PATENTANWALTSGESELLSCHAFT MBH, DE |
|
R081 | Change of applicant/patentee |
Ref document number: 826234 Country of ref document: EP Owner name: INVENSAS CORP., US Free format text: FORMER OWNER: NXP B.V., EINDHOVEN, NL Effective date: 20121121 |
|
R082 | Change of representative |
Ref document number: 826234 Country of ref document: EP Representative=s name: BOSCH JEHLE PATENTANWALTSGESELLSCHAFT MBH, DE Effective date: 20121121 |