DE69802019T2 - Vorrichtung und Verfahren zum Einbrennen - Google Patents

Vorrichtung und Verfahren zum Einbrennen

Info

Publication number
DE69802019T2
DE69802019T2 DE69802019T DE69802019T DE69802019T2 DE 69802019 T2 DE69802019 T2 DE 69802019T2 DE 69802019 T DE69802019 T DE 69802019T DE 69802019 T DE69802019 T DE 69802019T DE 69802019 T2 DE69802019 T2 DE 69802019T2
Authority
DE
Germany
Prior art keywords
burning apparatus
burning
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69802019T
Other languages
English (en)
Other versions
DE69802019D1 (de
Inventor
Kazutoshi Yoshioka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Electron Ltd
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Application granted granted Critical
Publication of DE69802019D1 publication Critical patent/DE69802019D1/de
Publication of DE69802019T2 publication Critical patent/DE69802019T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
DE69802019T 1997-01-16 1998-01-10 Vorrichtung und Verfahren zum Einbrennen Expired - Lifetime DE69802019T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1776097 1997-01-16

Publications (2)

Publication Number Publication Date
DE69802019D1 DE69802019D1 (de) 2001-11-22
DE69802019T2 true DE69802019T2 (de) 2002-06-06

Family

ID=11952686

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69802019T Expired - Lifetime DE69802019T2 (de) 1997-01-16 1998-01-10 Vorrichtung und Verfahren zum Einbrennen

Country Status (5)

Country Link
US (2) US6002108A (de)
EP (1) EP0854390B1 (de)
KR (1) KR100590355B1 (de)
DE (1) DE69802019T2 (de)
TW (1) TW464944B (de)

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TW464944B (en) * 1997-01-16 2001-11-21 Tokyo Electron Ltd Baking apparatus and baking method
JPH11168045A (ja) * 1997-12-03 1999-06-22 Mitsubishi Electric Corp 半導体製造装置およびウェハの処理方法
US6368776B1 (en) * 1998-03-18 2002-04-09 Tokyo Electron Limited Treatment apparatus and treatment method
US6780461B2 (en) 1998-09-14 2004-08-24 Asml Holding N.V. Environment exchange control for material on a wafer surface
US6254936B1 (en) * 1998-09-14 2001-07-03 Silicon Valley Group, Inc. Environment exchange control for material on a wafer surface
JP3892609B2 (ja) * 1999-02-16 2007-03-14 株式会社東芝 ホットプレートおよび半導体装置の製造方法
WO2000079576A1 (en) * 1999-06-19 2000-12-28 Genitech, Inc. Chemical deposition reactor and method of forming a thin film using the same
US6706466B1 (en) * 1999-08-03 2004-03-16 Kodak Polychrome Graphics Llc Articles having imagable coatings
WO2001018607A1 (en) * 1999-09-08 2001-03-15 Advanced Micro Devices, Inc. Method and apparatus for determining post exposure bake endpoint using residual gas analysis
US6695922B2 (en) * 1999-12-15 2004-02-24 Tokyo Electron Limited Film forming unit
KR100357471B1 (ko) * 1999-12-27 2002-10-18 주식회사 좋은기술 반도체 웨이퍼의 베이크장치
SG105487A1 (en) 2000-03-30 2004-08-27 Tokyo Electron Ltd Substrate processing apparatus and substrate processing method
JP3792986B2 (ja) * 2000-04-11 2006-07-05 東京エレクトロン株式会社 膜形成方法及び膜形成装置
TW453612U (en) * 2000-04-26 2001-09-01 Ritdisplay Corp Surface processing device of display panel
JP3590328B2 (ja) * 2000-05-11 2004-11-17 東京エレクトロン株式会社 塗布現像処理方法及び塗布現像処理システム
US6643604B1 (en) 2000-06-30 2003-11-04 Advanced Micro Devices, Inc. System for uniformly heating photoresist
JP3910791B2 (ja) * 2000-09-19 2007-04-25 東京エレクトロン株式会社 基板の熱処理方法及び基板の熱処理装置
US6432207B1 (en) * 2001-03-07 2002-08-13 Promos Technologies Inc. Method and structure for baking a wafer
JP3886424B2 (ja) * 2001-08-28 2007-02-28 鹿児島日本電気株式会社 基板処理装置及び方法
JP3992480B2 (ja) * 2001-11-12 2007-10-17 東京エレクトロン株式会社 基板処理装置および基板処理方法ならびに基板処理システム
JP2003156858A (ja) * 2001-11-22 2003-05-30 Tokyo Electron Ltd 基板処理方法及び基板処理システム
US20050026455A1 (en) * 2003-05-30 2005-02-03 Satomi Hamada Substrate processing apparatus and substrate processing method
US7651306B2 (en) 2004-12-22 2010-01-26 Applied Materials, Inc. Cartesian robot cluster tool architecture
US7396412B2 (en) 2004-12-22 2008-07-08 Sokudo Co., Ltd. Coat/develop module with shared dispense
US7699021B2 (en) 2004-12-22 2010-04-20 Sokudo Co., Ltd. Cluster tool substrate throughput optimization
US7798764B2 (en) 2005-12-22 2010-09-21 Applied Materials, Inc. Substrate processing sequence in a cartesian robot cluster tool
US7819079B2 (en) 2004-12-22 2010-10-26 Applied Materials, Inc. Cartesian cluster tool configuration for lithography type processes
JP4934595B2 (ja) * 2005-01-18 2012-05-16 エーエスエム アメリカ インコーポレイテッド 薄膜成長用反応装置
US7976898B2 (en) 2006-09-20 2011-07-12 Asm Genitech Korea Ltd. Atomic layer deposition apparatus
KR101355638B1 (ko) * 2006-11-09 2014-01-29 한국에이에스엠지니텍 주식회사 원자층 증착 장치
JP4954693B2 (ja) * 2006-12-21 2012-06-20 東京エレクトロン株式会社 基板の処理方法、基板の処理システム及びプログラムを記録したコンピュータ読み取り可能な記録媒体
JP2008218866A (ja) * 2007-03-07 2008-09-18 Elpida Memory Inc パターン形成方法およびパターン形成装置
US20080241384A1 (en) * 2007-04-02 2008-10-02 Asm Genitech Korea Ltd. Lateral flow deposition apparatus and method of depositing film by using the apparatus
JP4985183B2 (ja) 2007-07-26 2012-07-25 東京エレクトロン株式会社 基板処理装置及び基板処理方法並びに記憶媒体
KR100947481B1 (ko) * 2007-11-02 2010-03-17 세메스 주식회사 베이크 유닛 및 방법
US8282735B2 (en) * 2007-11-27 2012-10-09 Asm Genitech Korea Ltd. Atomic layer deposition apparatus
JP5875759B2 (ja) 2010-10-14 2016-03-02 株式会社Ｓｃｒｅｅｎセミコンダクターソリューションズ 熱処理方法および熱処理装置
JP6520490B2 (ja) * 2015-07-08 2019-05-29 信越化学工業株式会社 パターン形成方法
US10203604B2 (en) 2015-11-30 2019-02-12 Applied Materials, Inc. Method and apparatus for post exposure processing of photoresist wafers
US9958782B2 (en) 2016-06-29 2018-05-01 Applied Materials, Inc. Apparatus for post exposure bake
JP6781031B2 (ja) * 2016-12-08 2020-11-04 東京エレクトロン株式会社 基板処理方法及び熱処理装置
US10615058B2 (en) 2016-12-29 2020-04-07 Applied Materials, Inc. Apparatus for field guided acid profile control in a photoresist layer
US10274847B2 (en) * 2017-09-19 2019-04-30 Taiwan Semiconductor Manufacturing Co., Ltd. Humidity control in EUV lithography
US10872804B2 (en) 2017-11-03 2020-12-22 Asm Ip Holding B.V. Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination
US10872803B2 (en) 2017-11-03 2020-12-22 Asm Ip Holding B.V. Apparatus and methods for isolating a reaction chamber from a loading chamber resulting in reduced contamination
US20210166937A1 (en) * 2019-12-02 2021-06-03 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing a semiconductor device and semiconductor device manufacturing tool

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US4518848A (en) * 1981-05-15 1985-05-21 Gca Corporation Apparatus for baking resist on semiconductor wafers
JPS6218028A (ja) * 1985-07-16 1987-01-27 Toshiba Corp デイスカム装置
US5143552A (en) * 1988-03-09 1992-09-01 Tokyo Electron Limited Coating equipment
JPH02151865A (ja) * 1988-11-22 1990-06-11 Ucb Sa 高温反応処理方法
DE3940911A1 (de) * 1989-12-12 1991-06-13 Hoechst Ag Verfahren zur herstellung negativer kopien
JPH04172461A (ja) * 1990-11-06 1992-06-19 Kawasaki Steel Corp レジストパターンの形成方法
JP2994501B2 (ja) * 1991-09-13 1999-12-27 株式会社東芝 パターン形成方法
JPH06186754A (ja) * 1992-12-17 1994-07-08 Mitsubishi Electric Corp 微細レジストパターンの形成方法
JPH07161619A (ja) * 1993-12-09 1995-06-23 Hitachi Ltd 半導体ウェハのベーク方法及びベーク装置
JPH07199482A (ja) * 1993-12-28 1995-08-04 Fujitsu Ltd レジストパターン形成方法
KR0174316B1 (ko) * 1994-07-05 1999-04-01 모리시다 요이치 미세패턴 형성방법
JPH08111370A (ja) * 1994-10-12 1996-04-30 Mitsubishi Electric Corp 微細レジストパターンの形成方法およびポストエキスポージャーベーク装置
TW297910B (de) * 1995-02-02 1997-02-11 Tokyo Electron Co Ltd
JP3983831B2 (ja) * 1995-05-30 2007-09-26 シグマメルテック株式会社 基板ベーキング装置及び基板ベーキング方法
JPH0943855A (ja) * 1995-08-02 1997-02-14 Tokyo Ohka Kogyo Co Ltd レジストパターン形成方法
JP2861911B2 (ja) * 1996-02-23 1999-02-24 日本電気株式会社 半導体デバイスのレジストパターンの形成方法
JPH09320930A (ja) * 1996-05-27 1997-12-12 Mitsubishi Electric Corp パターン形成方法およびパターン形成装置
TW464944B (en) * 1997-01-16 2001-11-21 Tokyo Electron Ltd Baking apparatus and baking method
US5849582A (en) * 1997-05-01 1998-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Baking of photoresist on wafers

Also Published As

Publication number Publication date
US6002108A (en) 1999-12-14
US6261744B1 (en) 2001-07-17
EP0854390B1 (de) 2001-10-17
KR19980070540A (ko) 1998-10-26
KR100590355B1 (ko) 2006-09-06
EP0854390A1 (de) 1998-07-22
TW464944B (en) 2001-11-21
DE69802019D1 (de) 2001-11-22

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