DE69806678D1 - Halbleiterbauelement mit einer lichtundurchlässigen Schicht - Google Patents

Halbleiterbauelement mit einer lichtundurchlässigen Schicht

Info

Publication number
DE69806678D1
DE69806678D1 DE69806678T DE69806678T DE69806678D1 DE 69806678 D1 DE69806678 D1 DE 69806678D1 DE 69806678 T DE69806678 T DE 69806678T DE 69806678 T DE69806678 T DE 69806678T DE 69806678 D1 DE69806678 D1 DE 69806678D1
Authority
DE
Germany
Prior art keywords
semiconductor component
opaque layer
opaque
layer
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69806678T
Other languages
English (en)
Other versions
DE69806678T2 (de
Inventor
Yuji Okamoto
Norio Funahashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Renesas Electronics Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Publication of DE69806678D1 publication Critical patent/DE69806678D1/de
Application granted granted Critical
Publication of DE69806678T2 publication Critical patent/DE69806678T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/57Protection from inspection, reverse engineering or tampering
    • H01L23/576Protection from inspection, reverse engineering or tampering using active circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/34Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/34Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G11C16/3422Circuits or methods to evaluate read or write disturbance in nonvolatile memory, without steps to mitigate the problem
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/005Circuit means for protection against loss of information of semiconductor storage devices
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C7/00Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/24Memory cell safety or protection circuits, e.g. arrangements for preventing inadvertent reading or writing; Status cells; Test cells
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0216Coatings
    • H01L31/02161Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
DE69806678T 1997-04-23 1998-04-22 Halbleiterbauelement mit einer lichtundurchlässigen Schicht Expired - Lifetime DE69806678T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10577997A JP3001454B2 (ja) 1997-04-23 1997-04-23 半導体装置

Publications (2)

Publication Number Publication Date
DE69806678D1 true DE69806678D1 (de) 2002-08-29
DE69806678T2 DE69806678T2 (de) 2003-02-06

Family

ID=14416646

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69806678T Expired - Lifetime DE69806678T2 (de) 1997-04-23 1998-04-22 Halbleiterbauelement mit einer lichtundurchlässigen Schicht

Country Status (6)

Country Link
US (1) US6028335A (de)
EP (1) EP0874369B1 (de)
JP (1) JP3001454B2 (de)
KR (1) KR100299549B1 (de)
CN (1) CN1114950C (de)
DE (1) DE69806678T2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2786911A1 (fr) * 1998-12-02 2000-06-09 St Microelectronics Sa Memoire eeprom securisee comportant des moyens de detection d'effacement par uv
EP1154375A1 (de) * 2000-05-11 2001-11-14 Infineon Technologies AG Schaltungsanordnung zur Detektion einer äusseren Einwirkung auf einen Halbleiterchip
DE10161046B4 (de) * 2001-12-12 2006-02-02 Infineon Technologies Ag Digitale Schaltungsanordnung
US6714464B2 (en) * 2002-06-26 2004-03-30 Silicon Graphics, Inc. System and method for a self-calibrating sense-amplifier strobe
US6970386B2 (en) * 2003-03-03 2005-11-29 Emosyn America, Inc. Method and apparatus for detecting exposure of a semiconductor circuit to ultra-violet light
US6970037B2 (en) * 2003-09-05 2005-11-29 Catalyst Semiconductor, Inc. Programmable analog bias circuits using floating gate CMOS technology
US7149123B2 (en) * 2004-04-06 2006-12-12 Catalyst Semiconductor, Inc. Non-volatile CMOS reference circuit
KR100703971B1 (ko) * 2005-06-08 2007-04-06 삼성전자주식회사 반도체 집적 회로 장치 및 그 제조 방법
FR2890485A1 (fr) 2005-09-02 2007-03-09 St Microelectronics Sa Circuit integre ayant une memoire de donnees protegee contre l'effacement uv
FR2899716A1 (fr) 2006-04-07 2007-10-12 St Microelectronics Sa Procede de securisation de blocs de donnees dans une memoire programmable electriquement
US8997255B2 (en) 2006-07-31 2015-03-31 Inside Secure Verifying data integrity in a data storage device
US8352752B2 (en) 2006-09-01 2013-01-08 Inside Secure Detecting radiation-based attacks
US8178379B2 (en) * 2007-04-13 2012-05-15 Qimonda Ag Integrated circuit, resistivity changing memory device, memory module, and method of fabricating an integrated circuit
US9406621B2 (en) * 2010-06-10 2016-08-02 Texas Instruments Incorporated Ultraviolet energy shield for non-volatile charge storage memory
CN102314036A (zh) * 2010-06-29 2012-01-11 普诚科技股份有限公司 抗紫外光的电子装置及其制法
JP6033529B2 (ja) * 2011-05-30 2016-11-30 株式会社東海理化電機製作所 検出装置および電流センサ

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2618579B1 (fr) * 1987-07-21 1989-11-10 Thomson Semiconducteurs Circuit integre a memoire comportant un dispositif anti-fraude
JPH0777239B2 (ja) * 1988-09-22 1995-08-16 日本電気株式会社 浮遊ゲート型不揮発性半導体記憶装置
US4935702A (en) * 1988-12-09 1990-06-19 Synaptics, Inc. Subthreshold CMOS amplifier with offset adaptation
EP0477369B1 (de) * 1989-06-12 1997-08-13 Kabushiki Kaisha Toshiba Halbleiterspeicheranordnung
FR2651593B1 (fr) * 1989-09-07 1991-12-06 Sgs Thomson Microelectronics Dispositif de verrouillage a cellule a grille flottante jamais programmable.
JPH046421A (ja) * 1990-04-24 1992-01-10 Matsushita Electric Works Ltd 殺菌灯用紫外線センサ
JPH04138137A (ja) * 1990-09-28 1992-05-12 Nec San-Ei Instr Co Ltd 皮膚状態検出装置
JP3454520B2 (ja) * 1990-11-30 2003-10-06 インテル・コーポレーション フラッシュ記憶装置の書込み状態を確認する回路及びその方法
JPH0538915A (ja) * 1991-02-13 1993-02-19 Atsugi Unisia Corp 電磁サスペンシヨン装置
JPH04326574A (ja) * 1991-04-26 1992-11-16 Nec Yamagata Ltd 半導体記憶装置の製造方法
JP3632256B2 (ja) * 1994-09-30 2005-03-23 株式会社デンソー 窒化シリコン膜を有する半導体装置の製造方法
US5656521A (en) * 1995-01-12 1997-08-12 Advanced Micro Devices, Inc. Method of erasing UPROM transistors
JP3456049B2 (ja) * 1995-03-07 2003-10-14 ソニー株式会社 半導体装置のデータ書き込み方法及び装置

Also Published As

Publication number Publication date
JPH10303399A (ja) 1998-11-13
JP3001454B2 (ja) 2000-01-24
CN1198592A (zh) 1998-11-11
EP0874369A3 (de) 1999-09-29
CN1114950C (zh) 2003-07-16
EP0874369B1 (de) 2002-07-24
DE69806678T2 (de) 2003-02-06
KR100299549B1 (ko) 2001-10-19
US6028335A (en) 2000-02-22
KR19980081627A (ko) 1998-11-25
EP0874369A2 (de) 1998-10-28

Similar Documents

Publication Publication Date Title
DE69609313D1 (de) Halbleiterfeldeffektanordnung mit einer sige schicht
DE69927824D1 (de) Desodorierende absorbierende schicht
DE69534584D1 (de) Halbleiter-Bauteil mit Gräben
DE69942509D1 (de) Gegenstand mit halbleiterchip
DE69722403D1 (de) Banknote mit einer integrierten Schaltung
DE59504577D1 (de) Halbleiterbauelement mit hochsperrendem randabschluss
DE69601819D1 (de) Fahrzeugverglasung mit einer elektroleitenden Schicht
DE69806137D1 (de) Silizium mit niedriger defektdichte
DE69535970D1 (de) Elektrolumineszente Vorrichtung mit einer organischen elektrolumineszenten Schicht
DE59801130D1 (de) Optoelektronisches halbleiterbauelement
DE69321543D1 (de) Gefärbte Schicht
DE59407885D1 (de) Leistungshalbleiterbauelement mit pufferschicht
DE69729177D1 (de) Dekorative schicht
DE69806678D1 (de) Halbleiterbauelement mit einer lichtundurchlässigen Schicht
DE69125047T2 (de) Halbleiteranordnung mit einer isolierenden Schicht
DE69636455D1 (de) Kondensator mit vergrabener schicht
DE19882918T1 (de) Auseinanderziehbarer saugbarer Artikel mit einer reissbaren Schicht
DE69940029D1 (de) Halbleiterbauelement
DE69902199T2 (de) Halbleiteranordnung mit einer Pegelverschiebungsschaltung
DE58908152D1 (de) Halbleiterbauelement mit Passivierungsschicht.
DE69830867D1 (de) Halbleiteranordnung mit einer leitenden Schutzschicht
DE69836625D1 (de) Prüfen der funktionellen blöcke in einer integrierten halbleiterschaltung
DE69733388D1 (de) Halbleiteranordnung mit einer Schaltung zur Verhinderung von Latch-up
DE69724980D1 (de) Leitende schicht mit antireflexionsoberfläche
DE69623177T2 (de) Bauelement mit einer Schicht aus beta-C3N4

Legal Events

Date Code Title Description
8327 Change in the person/name/address of the patent owner

Owner name: NEC ELECTRONICS CORP., KAWASAKI, KANAGAWA, JP

8364 No opposition during term of opposition
R082 Change of representative

Ref document number: 874369

Country of ref document: EP

Representative=s name: BETTEN & RESCH, DE

R081 Change of applicant/patentee

Ref document number: 874369

Country of ref document: EP

Owner name: RENESAS ELECTRONICS CORPORATION, JP

Free format text: FORMER OWNER: NEC ELECTRONICS CORP., KAWASAKI, JP

Effective date: 20120828

R082 Change of representative

Ref document number: 874369

Country of ref document: EP

Representative=s name: PATENTANWAELTE BETTEN & RESCH, DE

Effective date: 20120828