DE69807676T2 - Selbstinterstitiell dominiertes silizium mit niedriger defektdichte - Google Patents

Selbstinterstitiell dominiertes silizium mit niedriger defektdichte

Info

Publication number: DE69807676T2
Authority: DE; Germany
Prior art keywords: interinitially; self; defect density; low defect; dominated silicon
Prior art date: 1997-04-09
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Lifetime

Application number

DE69807676T

Other languages

English (en)

Other versions

DE69807676D1 (de

Inventor

Robert Falster

A Markgraf

A Mcquaid

C Holzer

Paolo Mutti

K Johnson

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

SunEdison Inc

Original Assignee

SunEdison Inc

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1997-04-09

Filing date

1998-04-09

Publication date

2003-04-24

Family has litigation

First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=21918645&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=DE69807676(T2) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.

1998-04-09 Application filed by SunEdison Inc filed Critical SunEdison Inc

2002-10-10 Publication of DE69807676D1 publication Critical patent/DE69807676D1/de

2003-04-24 Application granted granted Critical

2003-04-24 Publication of DE69807676T2 publication Critical patent/DE69807676T2/de

2018-04-10 Anticipated expiration legal-status Critical

Status Expired - Lifetime legal-status Critical Current

Links

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/14—Heating of the melt or the crystallised materials
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/203—Controlling or regulating the relationship of pull rate (v) to axial thermal gradient (G)
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/206—Controlling or regulating the thermal history of growing the ingot
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
- H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
- H01L21/3225—Thermally inducing defects using oxygen present in the silicon body for intrinsic gettering
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1004—Apparatus with means for measuring, testing, or sensing
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/21—Circular sheet or circular blank

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Physics & Mathematics (AREA)
Condensed Matter Physics & Semiconductors (AREA)
General Physics & Mathematics (AREA)
Manufacturing & Machinery (AREA)
Computer Hardware Design (AREA)
Microelectronics & Electronic Packaging (AREA)
Power Engineering (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

DE69807676T 1997-04-09 1998-04-09 Selbstinterstitiell dominiertes silizium mit niedriger defektdichte Expired - Lifetime DE69807676T2 (de)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US4184597P	1997-04-09	1997-04-09
PCT/US1998/007365 WO1998045510A1 (en)	1997-04-09	1998-04-09	Low defect density, self-interstitial dominated silicon

Publications (2)

Publication Number	Publication Date
DE69807676D1 DE69807676D1 (de)	2002-10-10
DE69807676T2 true DE69807676T2 (de)	2003-04-24

Family

ID=21918645

Family Applications (7)

Application Number	Title	Priority Date	Filing Date
DE69806137T Expired - Lifetime DE69806137T2 (de)	1997-04-09	1998-04-09	Silizium mit niedriger defektdichte
DE69831618T Expired - Lifetime DE69831618T2 (de)	1997-04-09	1998-04-09	Freistellenbeherrschendes Silizium mit niedriger Fehlerdichte
DE69840690T Expired - Lifetime DE69840690D1 (de)	1997-04-09	1998-04-09	Selbst-zwischengitterdominiertes Silizium mit niedriger Fehlerdichte
DE69813041T Expired - Lifetime DE69813041T2 (de)	1997-04-09	1998-04-09	Freistellenbeherrschendes Silizium mit niedriger Fehlerdichte
DE69801903T Expired - Lifetime DE69801903T2 (de)	1997-04-09	1998-04-09	Freistellenbeherrschendes silicium mit niedriger fehlerdichte
DE69807676T Expired - Lifetime DE69807676T2 (de)	1997-04-09	1998-04-09	Selbstinterstitiell dominiertes silizium mit niedriger defektdichte
DE69824647T Expired - Lifetime DE69824647T2 (de)	1997-04-09	1998-04-09	Silicium mit niedriger Fehlerdichte

Family Applications Before (5)

Application Number	Title	Priority Date	Filing Date
DE69806137T Expired - Lifetime DE69806137T2 (de)	1997-04-09	1998-04-09	Silizium mit niedriger defektdichte
DE69831618T Expired - Lifetime DE69831618T2 (de)	1997-04-09	1998-04-09	Freistellenbeherrschendes Silizium mit niedriger Fehlerdichte
DE69840690T Expired - Lifetime DE69840690D1 (de)	1997-04-09	1998-04-09	Selbst-zwischengitterdominiertes Silizium mit niedriger Fehlerdichte
DE69813041T Expired - Lifetime DE69813041T2 (de)	1997-04-09	1998-04-09	Freistellenbeherrschendes Silizium mit niedriger Fehlerdichte
DE69801903T Expired - Lifetime DE69801903T2 (de)	1997-04-09	1998-04-09	Freistellenbeherrschendes silicium mit niedriger fehlerdichte

Family Applications After (1)

Application Number	Title	Priority Date	Filing Date
DE69824647T Expired - Lifetime DE69824647T2 (de)	1997-04-09	1998-04-09	Silicium mit niedriger Fehlerdichte

Country Status (10)

Country	Link
US (11)	US6254672B1 (de)
EP (7)	EP1118697B1 (de)
JP (9)	JP3449730B2 (de)
KR (6)	KR20010006227A (de)
CN (7)	CN101070621B (de)
DE (7)	DE69806137T2 (de)
MY (6)	MY120036A (de)
SG (3)	SG165151A1 (de)
TW (3)	TW494146B (de)
WO (3)	WO1998045510A1 (de)

Families Citing this family (125)

* Cited by examiner, † Cited by third party
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US6361619B1 (en)	1998-09-02	2002-03-26	Memc Electronic Materials, Inc.	Thermally annealed wafers having improved internal gettering
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- 1998-04-09 CN CN2007100891203A patent/CN101070621B/zh not_active Expired - Fee Related
- 1998-04-09 TW TW088118775A patent/TW494146B/zh not_active IP Right Cessation
- 1998-04-09 EP EP01107427A patent/EP1118697B1/de not_active Revoked
- 1998-04-09 MY MYPI98001563A patent/MY120036A/en unknown
- 1998-04-09 KR KR1019997009307A patent/KR20010006227A/ko not_active Application Discontinuation
- 1998-04-09 KR KR10-1999-7009309A patent/KR100508048B1/ko not_active IP Right Cessation
- 1998-04-09 TW TW087105359A patent/TW577939B/zh not_active IP Right Cessation
- 1998-04-09 EP EP02021897A patent/EP1273684B1/de not_active Revoked
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- 1998-04-09 KR KR1020057008092A patent/KR20050049561A/ko not_active Application Discontinuation
- 1998-04-09 WO PCT/US1998/007365 patent/WO1998045510A1/en active IP Right Grant
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- 1998-04-09 US US09/057,907 patent/US6287380B1/en not_active Expired - Lifetime
- 1998-04-09 EP EP98919749A patent/EP0972094B1/de not_active Revoked
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1999
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2001
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2002
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2003
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2004
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2005
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Also Published As

Publication number	Publication date
US5919302A (en)	1999-07-06
JP2003192492A (ja)	2003-07-09
KR20060002028A (ko)	2006-01-06
JP2001500468A (ja)	2001-01-16
JP2003192493A (ja)	2003-07-09
DE69824647D1 (de)	2004-07-22
EP1209258B1 (de)	2004-06-16
EP1209259A3 (de)	2003-08-20
KR20010006182A (ko)	2001-01-26
CN1253610C (zh)	2006-04-26
JP4313356B2 (ja)	2009-08-12
EP1273684A3 (de)	2003-11-26
DE69824647T2 (de)	2005-06-09
JP4274973B2 (ja)	2009-06-10
TWI257962B (en)	2006-07-11
DE69813041T2 (de)	2004-01-15
CN101070621A (zh)	2007-11-14
CN1255169A (zh)	2000-05-31
JP4299523B2 (ja)	2009-07-22
EP0973963A1 (de)	2000-01-26
JP2004155655A (ja)	2004-06-03
US20020007779A1 (en)	2002-01-24
EP0972094A1 (de)	2000-01-19
MY127594A (en)	2006-12-29
EP1118697B1 (de)	2003-04-02
EP1209259B1 (de)	2009-03-25
EP1118697A3 (de)	2001-09-05
JP2006056779A (ja)	2006-03-02
CN1261928A (zh)	2000-08-02
US6287380B1 (en)	2001-09-11
MY127584A (en)	2006-12-29
KR100508048B1 (ko)	2005-08-17
WO1998045509A1 (en)	1998-10-15
JP3449731B2 (ja)	2003-09-22
TW577939B (en)	2004-03-01
DE69807676D1 (de)	2002-10-10
DE69840690D1 (de)	2009-05-07
WO1998045510A1 (en)	1998-10-15
CN101070621B (zh)	2012-09-05
CN1854353A (zh)	2006-11-01
DE69831618D1 (de)	2005-10-20
EP1273684A2 (de)	2003-01-08
CN1936113A (zh)	2007-03-28
SG165151A1 (en)	2010-10-28
EP1209258A2 (de)	2002-05-29
CN1936112A (zh)	2007-03-28
TW494146B (en)	2002-07-11
US6638357B2 (en)	2003-10-28
JP3782387B2 (ja)	2006-06-07
US6409826B2 (en)	2002-06-25
JP2003192490A (ja)	2003-07-09
EP0973964B1 (de)	2002-09-04
KR20040065306A (ko)	2004-07-21
MY127383A (en)	2006-11-30
DE69801903D1 (de)	2001-11-08
US20050205000A1 (en)	2005-09-22
DE69806137D1 (de)	2002-07-25
CN100595351C (zh)	2010-03-24
WO1998045508A1 (en)	1998-10-15
MY132874A (en)	2007-10-31
JP4291559B2 (ja)	2009-07-08
EP0973964A1 (de)	2000-01-26
DE69806137T2 (de)	2002-11-21
JP3544676B2 (ja)	2004-07-21
EP1209258A3 (de)	2002-08-28
CN1280455C (zh)	2006-10-18
CN1257556A (zh)	2000-06-21
CN1280454C (zh)	2006-10-18
EP0973963B1 (de)	2002-06-19
JP3449730B2 (ja)	2003-09-22
US20020139294A1 (en)	2002-10-03
MY120036A (en)	2005-08-30
KR20010006229A (ko)	2001-01-26
KR20050049561A (ko)	2005-05-25
EP0972094B1 (de)	2001-10-04
DE69813041D1 (de)	2003-05-08
DE69801903T2 (de)	2002-03-28
JP2006062960A (ja)	2006-03-09
EP1209259A2 (de)	2002-05-29
JP2001518874A (ja)	2001-10-16
SG105510A1 (en)	2004-08-27
EP1273684B1 (de)	2005-09-14
US6632278B2 (en)	2003-10-14
JP2000513696A (ja)	2000-10-17
US6605150B2 (en)	2003-08-12
US20020170485A1 (en)	2002-11-21
US20040089224A1 (en)	2004-05-13
MY120441A (en)	2005-10-31
US20040070012A1 (en)	2004-04-15
KR20010006227A (ko)	2001-01-26
JP4477569B2 (ja)	2010-06-09
DE69831618T2 (de)	2006-06-29
US20010020437A1 (en)	2001-09-13
US20010025597A1 (en)	2001-10-04
SG105509A1 (en)	2004-08-27
EP1118697A2 (de)	2001-07-25
CN1936112B (zh)	2011-05-11
US6409827B2 (en)	2002-06-25
CN100547122C (zh)	2009-10-07
US6254672B1 (en)	2001-07-03

Legal Events

Date	Code	Title	Description
2003-10-02	8364	No opposition during term of opposition

Publication	Publication Date	Title
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DE69801028D1 (de)	2001-08-09	Adsorbens
ID16697A (id)	1997-11-06	Penghubung berkepadatan tinggi dengan kemampuan tinggi
DE69841667D1 (de)	2010-07-01	Halbleiteranordnungen mit MOS-Gatter
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DE29717456U1 (de)	1997-11-13	Sitzmöbel
DE29718651U1 (de)	1998-02-26	Sitzmöbel
DE29713736U1 (de)	1997-11-27	Sitzmöbel
DE29717640U1 (de)	1997-11-27	Sitzmöbel
DE29703494U1 (de)	1997-05-22	Sitzmöbel
DE29812464U1 (de)	1998-12-17	Fussmatte (Mit Kassette)
SE9704794D0 (sv)	1997-12-19	BMS edit
DE69609869D1 (de)	2000-09-21	Retroreflektierende schichtelemente
FR2778665B1 (fr)	2000-06-30	Polypeptide prax-1
DE29806900U1 (de)	1998-06-25	Drehscheiben-Anordnung
DE29722804U1 (de)	1998-03-05	Prüfvorrichtung
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