DE69809482D1 - Langwelliger, oberflächenemittierender Laser mit vertikalem Resonator und Herstellungsverfahren - Google Patents
Langwelliger, oberflächenemittierender Laser mit vertikalem Resonator und HerstellungsverfahrenInfo
- Publication number
- DE69809482D1 DE69809482D1 DE69809482T DE69809482T DE69809482D1 DE 69809482 D1 DE69809482 D1 DE 69809482D1 DE 69809482 T DE69809482 T DE 69809482T DE 69809482 T DE69809482 T DE 69809482T DE 69809482 D1 DE69809482 D1 DE 69809482D1
- Authority
- DE
- Germany
- Prior art keywords
- wave
- long
- manufacturing process
- emitting laser
- vertical resonator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/1838—Reflector bonded by wafer fusion or by an intermediate compound
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/021—Silicon based substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0217—Removal of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18341—Intra-cavity contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
- H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/795,261 US5835521A (en) | 1997-02-10 | 1997-02-10 | Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE69809482D1 true DE69809482D1 (de) | 2003-01-02 |
| DE69809482T2 DE69809482T2 (de) | 2003-04-03 |
Family
ID=25165133
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE69809482T Expired - Lifetime DE69809482T2 (de) | 1997-02-10 | 1998-02-09 | Langwelliger, oberflächenemittierender Laser mit vertikalem Resonator und Herstellungsverfahren |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US5835521A (de) |
| EP (1) | EP0860913B1 (de) |
| JP (1) | JP3805522B2 (de) |
| DE (1) | DE69809482T2 (de) |
| TW (1) | TW379475B (de) |
Families Citing this family (71)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2734676B1 (fr) * | 1995-05-23 | 1997-08-08 | Labeyrie Antoine | Procede et dispositifs d'emission ou reception laser pour la transmission d'informations par voie optique |
| US6148016A (en) * | 1997-11-06 | 2000-11-14 | The Regents Of The University Of California | Integrated semiconductor lasers and photodetectors |
| US6044100A (en) * | 1997-12-23 | 2000-03-28 | Lucent Technologies Inc. | Lateral injection VCSEL |
| GB2333895B (en) * | 1998-01-31 | 2003-02-26 | Mitel Semiconductor Ab | Pre-fusion oxidized and wafer-bonded vertical cavity laser |
| US20030219917A1 (en) * | 1998-12-21 | 2003-11-27 | Johnson Ralph H. | System and method using migration enhanced epitaxy for flattening active layers and the mechanical stabilization of quantum wells associated with vertical cavity surface emitting lasers |
| US7257143B2 (en) * | 1998-12-21 | 2007-08-14 | Finisar Corporation | Multicomponent barrier layers in quantum well active regions to enhance confinement and speed |
| US7167495B2 (en) * | 1998-12-21 | 2007-01-23 | Finisar Corporation | Use of GaAs extended barrier layers between active regions containing nitrogen and AlGaAs confining layers |
| US7286585B2 (en) | 1998-12-21 | 2007-10-23 | Finisar Corporation | Low temperature grown layers with migration enhanced epitaxy adjacent to an InGaAsN(Sb) based active region |
| US6922426B2 (en) | 2001-12-20 | 2005-07-26 | Finisar Corporation | Vertical cavity surface emitting laser including indium in the active region |
| US6975660B2 (en) | 2001-12-27 | 2005-12-13 | Finisar Corporation | Vertical cavity surface emitting laser including indium and antimony in the active region |
| US7408964B2 (en) | 2001-12-20 | 2008-08-05 | Finisar Corporation | Vertical cavity surface emitting laser including indium and nitrogen in the active region |
| US7435660B2 (en) * | 1998-12-21 | 2008-10-14 | Finisar Corporation | Migration enhanced epitaxy fabrication of active regions having quantum wells |
| US7095770B2 (en) | 2001-12-20 | 2006-08-22 | Finisar Corporation | Vertical cavity surface emitting laser including indium, antimony and nitrogen in the active region |
| US7058112B2 (en) | 2001-12-27 | 2006-06-06 | Finisar Corporation | Indium free vertical cavity surface emitting laser |
| US6204189B1 (en) | 1999-01-29 | 2001-03-20 | The Regents Of The University Of California | Fabrication of precision high quality facets on molecular beam epitaxy material |
| US6320206B1 (en) | 1999-02-05 | 2001-11-20 | Lumileds Lighting, U.S., Llc | Light emitting devices having wafer bonded aluminum gallium indium nitride structures and mirror stacks |
| US6280523B1 (en) * | 1999-02-05 | 2001-08-28 | Lumileds Lighting, U.S., Llc | Thickness tailoring of wafer bonded AlxGayInzN structures by laser melting |
| US20010042866A1 (en) | 1999-02-05 | 2001-11-22 | Carrie Carter Coman | Inxalygazn optical emitters fabricated via substrate removal |
| US20040175901A1 (en) * | 1999-02-10 | 2004-09-09 | Commissariat A L'energie Atomique | Method for forming an optical silicon layer on a support and use of said method in the production of optical components |
| US6480520B1 (en) * | 2000-04-17 | 2002-11-12 | Mp Technologies Llc | Aluminum-free vertical cavity surface emitting lasers (VCSELs) |
| AU2001273551A1 (en) * | 2000-07-21 | 2002-02-05 | Motorola, Inc. | Optical structure on compliant substrate |
| US6274463B1 (en) | 2000-07-31 | 2001-08-14 | Hewlett-Packard Company | Fabrication of a photoconductive or a cathoconductive device using lateral solid overgrowth method |
| CA2314783A1 (en) * | 2000-08-01 | 2002-02-01 | Kenneth Lloyd Westra | A method of making a high reflectivity micro mirror and a micro mirror |
| US6841407B2 (en) * | 2000-08-22 | 2005-01-11 | The Regents Of The University Of California | Method for aperturing vertical-cavity surface-emitting lasers (VCSELs) |
| US6810064B1 (en) * | 2000-08-22 | 2004-10-26 | The Regents Of The University Of California | Heat spreading layers for vertical cavity surface emitting lasers |
| US6696308B1 (en) * | 2000-10-27 | 2004-02-24 | Chan-Long Shieh | Electrically pumped long-wavelength VCSEL with air gap DBR and methods of fabrication |
| TWI227799B (en) * | 2000-12-29 | 2005-02-11 | Honeywell Int Inc | Resonant reflector for increased wavelength and polarization control |
| US6782027B2 (en) * | 2000-12-29 | 2004-08-24 | Finisar Corporation | Resonant reflector for use with optoelectronic devices |
| US20020163688A1 (en) * | 2001-03-26 | 2002-11-07 | Zuhua Zhu | Optical communications system and vertical cavity surface emitting laser therefor |
| US6878958B2 (en) * | 2001-03-26 | 2005-04-12 | Gazillion Bits, Inc. | Vertical cavity surface emitting laser with buried dielectric distributed Bragg reflector |
| US6628694B2 (en) * | 2001-04-23 | 2003-09-30 | Agilent Technologies, Inc. | Reliability-enhancing layers for vertical cavity surface emitting lasers |
| US6709989B2 (en) | 2001-06-21 | 2004-03-23 | Motorola, Inc. | Method for fabricating a semiconductor structure including a metal oxide interface with silicon |
| US6693298B2 (en) | 2001-07-20 | 2004-02-17 | Motorola, Inc. | Structure and method for fabricating epitaxial semiconductor on insulator (SOI) structures and devices utilizing the formation of a compliant substrate for materials used to form same |
| EP1298461A1 (de) * | 2001-09-27 | 2003-04-02 | Interuniversitair Microelektronica Centrum Vzw | Halbleiter Verteilten Bragg-Reflektor mit GaP und Halbleiterbauelement mit einem Resonanzhohlraum und einer solchen VBR |
| EP1302791A1 (de) * | 2001-09-27 | 2003-04-16 | Interuniversitair Microelektronica Centrum Vzw | Verteilter Bragg-Reflektor mit einer GaP Schicht und Resonanzhohlraum-Halbleiterbauelement mit einem solchen VBR |
| US6656761B2 (en) * | 2001-11-21 | 2003-12-02 | Motorola, Inc. | Method for forming a semiconductor device for detecting light |
| FR2835065B1 (fr) * | 2002-01-22 | 2004-04-02 | Centre Nat Rech Scient | Composant a absorbant saturable et procede de fabrication de composant a absorbant saturable |
| US7295586B2 (en) | 2002-02-21 | 2007-11-13 | Finisar Corporation | Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs |
| US6822995B2 (en) | 2002-02-21 | 2004-11-23 | Finisar Corporation | GaAs/AI(Ga)As distributed bragg reflector on InP |
| US6658041B2 (en) | 2002-03-20 | 2003-12-02 | Agilent Technologies, Inc. | Wafer bonded vertical cavity surface emitting laser systems |
| JP4497859B2 (ja) * | 2002-08-06 | 2010-07-07 | 株式会社リコー | 面発光半導体レーザ装置および光伝送モジュールおよび光伝送システム |
| US6936486B2 (en) * | 2002-11-19 | 2005-08-30 | Jdsu Uniphase Corporation | Low voltage multi-junction vertical cavity surface emitting laser |
| US6806202B2 (en) | 2002-12-03 | 2004-10-19 | Motorola, Inc. | Method of removing silicon oxide from a surface of a substrate |
| US20040161006A1 (en) * | 2003-02-18 | 2004-08-19 | Ying-Lan Chang | Method and apparatus for improving wavelength stability for InGaAsN devices |
| US6930059B2 (en) * | 2003-02-27 | 2005-08-16 | Sharp Laboratories Of America, Inc. | Method for depositing a nanolaminate film by atomic layer deposition |
| US7433381B2 (en) * | 2003-06-25 | 2008-10-07 | Finisar Corporation | InP based long wavelength VCSEL |
| US7812423B2 (en) | 2003-08-12 | 2010-10-12 | Massachusetts Institute Of Technology | Optical device comprising crystalline semiconductor layer and reflective element |
| US7151284B2 (en) * | 2003-11-10 | 2006-12-19 | Shangjr Gwo | Structures for light emitting devices with integrated multilayer mirrors |
| KR100527108B1 (ko) * | 2003-11-28 | 2005-11-09 | 한국전자통신연구원 | 반도체 광소자의 제작 방법 |
| US7901870B1 (en) | 2004-05-12 | 2011-03-08 | Cirrex Systems Llc | Adjusting optical properties of optical thin films |
| US7565084B1 (en) | 2004-09-15 | 2009-07-21 | Wach Michael L | Robustly stabilizing laser systems |
| CN101432936B (zh) | 2004-10-01 | 2011-02-02 | 菲尼萨公司 | 具有多顶侧接触的垂直腔面发射激光器 |
| US7860137B2 (en) | 2004-10-01 | 2010-12-28 | Finisar Corporation | Vertical cavity surface emitting laser with undoped top mirror |
| KR100627703B1 (ko) * | 2004-12-14 | 2006-09-26 | 한국전자통신연구원 | 하이브리드 금속접합 표면방출 레이저 및 그 제작 방법 |
| JP2006294811A (ja) * | 2005-04-08 | 2006-10-26 | Fuji Xerox Co Ltd | トンネル接合型面発光半導体レーザ素子およびその製造方法 |
| JP5017804B2 (ja) * | 2005-06-15 | 2012-09-05 | 富士ゼロックス株式会社 | トンネル接合型面発光半導体レーザ装置およびその製造方法 |
| CN100369339C (zh) * | 2005-09-28 | 2008-02-13 | 中国科学院半导体研究所 | 与标准集成电路工艺兼容的硅基dbr激光器及其工艺 |
| WO2007047779A1 (en) * | 2005-10-14 | 2007-04-26 | University Of Florida Research Foundation, Inc. | Method and apparatus for light emission utilizing an oled with a microcavity |
| JP4548329B2 (ja) * | 2005-12-19 | 2010-09-22 | セイコーエプソン株式会社 | 面発光型半導体レーザ |
| US20090003390A1 (en) * | 2005-12-20 | 2009-01-01 | Koninklijke Philips Electronics, N.V. | Optimal Colors for a Laser Pico-Beamer |
| US7903338B1 (en) | 2006-07-08 | 2011-03-08 | Cirrex Systems Llc | Method and system for managing light at an optical interface |
| JP5205729B2 (ja) | 2006-09-28 | 2013-06-05 | 富士通株式会社 | 半導体レーザ装置及びその製造方法 |
| JP2015126040A (ja) * | 2013-12-26 | 2015-07-06 | 株式会社リコー | 発光デバイス、光源装置及びレーザ装置 |
| JP2016021484A (ja) * | 2014-07-14 | 2016-02-04 | 株式会社リコー | 化合物半導体装置及び面発光レーザ |
| US9337622B2 (en) | 2014-07-18 | 2016-05-10 | Wisconsin Alumni Research Foundation | Compact distributed bragg reflectors |
| US10243314B2 (en) * | 2015-09-18 | 2019-03-26 | Skorpios Technologies, Inc. | Semiconductor layer variation for substrate removal after bonding |
| DE112018006312T5 (de) * | 2017-12-11 | 2020-09-17 | Sony Semiconductor Solutions Corporation | Verfahren zur Herstellung eines oberflächenemittierenden Laserelements mit vertikalem Resonator, oberflächenemittierendes Laserelement mit vertikalem Resonator, Abstandssensor und elektronisches Bauelement |
| US11563307B2 (en) * | 2018-10-01 | 2023-01-24 | Mellanox Technologies, Ltd. | High speed high bandwidth vertical-cavity surface-emitting laser |
| CN111600200B (zh) * | 2020-06-05 | 2021-05-07 | 苏州汉骅半导体有限公司 | 垂直腔面发射激光器的制造方法及垂直腔面发射激光器 |
| CN113707733A (zh) * | 2021-08-05 | 2021-11-26 | 西安电子科技大学 | 一种波导型Ge/Si雪崩光电二极管及制备方法 |
| CN116979371A (zh) * | 2023-07-21 | 2023-10-31 | 深圳技术大学 | 一种tmdc激光器结构及其制作方法 |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5158908A (en) * | 1990-08-31 | 1992-10-27 | At&T Bell Laboratories | Distributed bragg reflectors and devices incorporating same |
| EP0495301A1 (de) * | 1990-12-14 | 1992-07-22 | AT&T Corp. | Verfahren zur Herstellung eines Halbleiterlasers |
| US5625637A (en) * | 1991-03-28 | 1997-04-29 | Seiko Epson Corporation | Surface emitting semiconductor laser and its manufacturing process |
| JPH0669585A (ja) * | 1992-08-12 | 1994-03-11 | Fujitsu Ltd | 面発光半導体レーザ及びその製造方法 |
| JPH0669491A (ja) * | 1992-08-18 | 1994-03-11 | Fujitsu Ltd | 光送受信装置 |
| JP3095545B2 (ja) * | 1992-09-29 | 2000-10-03 | 株式会社東芝 | 面発光型半導体発光装置およびその製造方法 |
| JPH06291406A (ja) * | 1993-03-31 | 1994-10-18 | Fujitsu Ltd | 面発光半導体レーザ |
| GB2277405A (en) * | 1993-04-22 | 1994-10-26 | Sharp Kk | Semiconductor colour display or detector array |
| JP2900754B2 (ja) * | 1993-05-31 | 1999-06-02 | 信越半導体株式会社 | ＡｌＧａＩｎＰ系発光装置 |
| JPH0715082A (ja) * | 1993-06-24 | 1995-01-17 | Mitsubishi Electric Corp | 半導体パルセーションレーザ |
| JPH0738150A (ja) * | 1993-07-22 | 1995-02-07 | Toshiba Corp | 半導体発光装置 |
| US5363398A (en) * | 1993-09-30 | 1994-11-08 | At&T Bell Laboratories | Absorption resonant rare earth-doped micro-cavities |
| JP2871477B2 (ja) * | 1994-09-22 | 1999-03-17 | 信越半導体株式会社 | 半導体発光装置およびその製造方法 |
| US5557627A (en) * | 1995-05-19 | 1996-09-17 | Sandia Corporation | Visible-wavelength semiconductor lasers and arrays |
| US5712865A (en) * | 1995-09-28 | 1998-01-27 | Sandia Corporation | Temperature-insensitive vertical-cavity surface-emitting lasers and method for fabrication thereof |
| US5724376A (en) * | 1995-11-30 | 1998-03-03 | Hewlett-Packard Company | Transparent substrate vertical cavity surface emitting lasers fabricated by semiconductor wafer bonding |
| AU3659297A (en) * | 1996-08-21 | 1998-03-06 | W.L. Gore & Associates, Inc. | Vertical cavity surface emitting lasers using patterned wafer fusion |
| US5848086A (en) * | 1996-12-09 | 1998-12-08 | Motorola, Inc. | Electrically confined VCSEL |
| US5883912A (en) * | 1996-12-09 | 1999-03-16 | Motorola, Inc. | Long wavelength VCSEL |
| US5914976A (en) * | 1997-01-08 | 1999-06-22 | W. L. Gore & Associates, Inc. | VCSEL-based multi-wavelength transmitter and receiver modules for serial and parallel optical links |
-
1997
- 1997-02-10 US US08/795,261 patent/US5835521A/en not_active Expired - Lifetime
-
1998
- 1998-02-09 EP EP98102210A patent/EP0860913B1/de not_active Expired - Lifetime
- 1998-02-09 DE DE69809482T patent/DE69809482T2/de not_active Expired - Lifetime
- 1998-02-10 JP JP04620598A patent/JP3805522B2/ja not_active Expired - Fee Related
- 1998-03-10 TW TW87101798A patent/TW379475B/zh not_active IP Right Cessation
- 1998-03-26 US US09/047,954 patent/US6121068A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| EP0860913A2 (de) | 1998-08-26 |
| EP0860913B1 (de) | 2002-11-20 |
| DE69809482T2 (de) | 2003-04-03 |
| US5835521A (en) | 1998-11-10 |
| JP3805522B2 (ja) | 2006-08-02 |
| JPH10256656A (ja) | 1998-09-25 |
| TW379475B (en) | 2000-01-11 |
| EP0860913A3 (de) | 1999-03-31 |
| US6121068A (en) | 2000-09-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8364 | No opposition during term of opposition | ||
| 8327 | Change in the person/name/address of the patent owner |
Owner name: FINISAR CORP.(N.D.GES.D.STAATES DELAWARE), SUNNYVA |