DE69826199D1 - Verfahren und Vorrichtung zur Programmierung einer Speicheranordnung wie EPROM-Matrixzellen mit virtueller Erdung - Google Patents

Verfahren und Vorrichtung zur Programmierung einer Speicheranordnung wie EPROM-Matrixzellen mit virtueller Erdung

Info

Publication number
DE69826199D1
DE69826199D1 DE69826199T DE69826199T DE69826199D1 DE 69826199 D1 DE69826199 D1 DE 69826199D1 DE 69826199 T DE69826199 T DE 69826199T DE 69826199 T DE69826199 T DE 69826199T DE 69826199 D1 DE69826199 D1 DE 69826199D1
Authority
DE
Germany
Prior art keywords
programming
memory arrangement
matrix cells
virtual grounding
eprom matrix
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
DE69826199T
Other languages
English (en)
Other versions
DE69826199T2 (de
Inventor
Chin-Hsi Lin
Shi-Charng Al
Chien-Sing Lee
Ful-Long Ni
Mam-Tsung Wang
Chin-Yi Huang
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Macronix International Co Ltd
Original Assignee
Macronix International Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Macronix International Co Ltd filed Critical Macronix International Co Ltd
Application granted granted Critical
Publication of DE69826199D1 publication Critical patent/DE69826199D1/de
Publication of DE69826199T2 publication Critical patent/DE69826199T2/de
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G11C16/3481—Circuits or methods to verify correct programming of nonvolatile memory cells whilst programming is in progress, e.g. by detecting onset or cessation of current flow in cells and using the detector output to terminate programming
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3468—Prevention of overerasure or overprogramming, e.g. by verifying whilst erasing or writing
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0491—Virtual ground arrays
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/08—Address circuits; Decoders; Word-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out
DE69826199T 1997-08-26 1998-03-09 Verfahren und Vorrichtung zur Programmierung einer Speicheranordnung wie EPROM-Matrixzellen mit virtueller Erdung Expired - Lifetime DE69826199T2 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/918,796 US5959892A (en) 1997-08-26 1997-08-26 Apparatus and method for programming virtual ground EPROM array cell without disturbing adjacent cells
US918796 1997-08-26

Publications (2)

Publication Number Publication Date
DE69826199D1 true DE69826199D1 (de) 2004-10-21
DE69826199T2 DE69826199T2 (de) 2005-11-17

Family

ID=25440984

Family Applications (1)

Application Number Title Priority Date Filing Date
DE69826199T Expired - Lifetime DE69826199T2 (de) 1997-08-26 1998-03-09 Verfahren und Vorrichtung zur Programmierung einer Speicheranordnung wie EPROM-Matrixzellen mit virtueller Erdung

Country Status (3)

Country Link
US (2) US5959892A (de)
EP (1) EP0899744B1 (de)
DE (1) DE69826199T2 (de)

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Also Published As

Publication number Publication date
EP0899744B1 (de) 2004-09-15
EP0899744A2 (de) 1999-03-03
US6141253A (en) 2000-10-31
DE69826199T2 (de) 2005-11-17
EP0899744A3 (de) 1999-09-22
US5959892A (en) 1999-09-28

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